公开(公告)号：US20240203984A1

公开(公告)日：2024-06-20

申请号：US18067968

申请日：2022-12-19

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Su Chen Fan ,  Indira Seshadri ,  Jay William Strane ,  Stuart Sieg

IPC分类号： H01L27/088 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/775

CPC分类号： H01L27/088 ,  H01L21/823412 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/775

摘要： Semiconductor devices and methods of forming the same include a lower semiconductor device over a substrate, the lower semiconductor device having a first width. An upper semiconductor device is over the lower semiconductor device. The upper semiconductor device has a second width smaller than the first width. A dielectric structure is over the lower semiconductor device and has a first sidewall that faces the upper semiconductor device and a second sidewall that aligns vertically with a sidewall of the lower semiconductor device.

公开(公告)号：US12002856B2

公开(公告)日：2024-06-04

申请号：US18179556

申请日：2023-03-07

申请人： International Business Machines Corporation

发明人： Indira Seshadri ,  Ruilong Xie ,  Chen Zhang ,  Ekmini Anuja De Silva

IPC分类号： H01L29/10 ,  H01L21/308 ,  H01L29/78

CPC分类号： H01L29/1037 ,  H01L21/3081 ,  H01L21/3086 ,  H01L29/7827

摘要： A method of forming a semiconductor structure includes forming a first array of mandrels on a hardmask layer disposed on an uppermost surface of a semiconductor substrate. First sidewall image transfer spacers are formed on opposing longitudinal sidewalls of each mandrel in the first array of mandrels. A second array of mandrels is formed on the hardmask layer. Each mandrel in the second array of mandrels is laterally separated from each mandrel in the first array of mandrels by the first sidewall image transfer spacers. Second sidewall image transfer spacers are formed on opposing transversal sidewalls of the first array of mandrels and the second array of mandrels. Portions of the second sidewall image transfer spacers are selectively removed to define a crosslink fin pattern to be transferred to the semiconductor substrate.

公开(公告)号：US11855191B2

公开(公告)日：2023-12-26

申请号：US17450121

申请日：2021-10-06

申请人： International Business Machines Corporation

发明人： Brent Anderson ,  Junli Wang ,  Indira Seshadri ,  Chen Zhang ,  Ruilong Xie ,  Joshua M. Rubin ,  Hemanth Jagannathan

IPC分类号： H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092

CPC分类号： H01L29/66803 ,  H01L21/823431 ,  H01L21/823821 ,  H01L27/0924 ,  H01L29/7855

摘要： An apparatus includes a fin, a gate, and a gate contact. A portion of the fin is disposed in a first layer. The gate is disposed in the first layer and adjacent to the fin. The gate contact is disposed on the gate and in a second layer, wherein the second layer is disposed on the first layer such that the gate contact is above the fin.

公开(公告)号：US20230411212A1

公开(公告)日：2023-12-21

申请号：US17807006

申请日：2022-06-15

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Su Chen Fan ,  Stuart Sieg ,  Dominik Metzler ,  Indira Seshadri ,  Junli Wang

IPC分类号： H01L21/768 ,  H01L23/522 ,  H01L23/528

CPC分类号： H01L21/76897 ,  H01L23/5226 ,  H01L23/5283 ,  H01L21/76816 ,  H01L21/76877

摘要： A semiconductor device is provided. The semiconductor device includes an interlayer dielectric layer; and a plurality of metal contacts formed in the interlayer dielectric layer. The plurality of metal contacts include a plurality of shallow metal contacts having a first depth, and a plurality of deep metal contacts having a second depth that is greater than the first depth, wherein a first one of the shallow metal contacts overlaps and directly contacts a first one of the deep metal contacts, and wherein the plurality of metal contacts have an equal spacing therebetween.

公开(公告)号：US11621326B2

公开(公告)日：2023-04-04

申请号：US17125850

申请日：2020-12-17

申请人： International Business Machines Corporation

发明人： Indira Seshadri ,  Ruilong Xie ,  Chen Zhang ,  Ekmini Anuja De Silva

IPC分类号： H01L29/10 ,  H01L21/308 ,  H01L29/78

摘要： A semiconductor structure, and a method of making the same, includes a semiconductor substrate having an uppermost surface and a fin structure on the uppermost surface of the semiconductor substrate including n first regions extending perpendicular to the uppermost surface of the semiconductor substrate and n−1 second regions extending between and connecting each of the n first regions and parallel to the uppermost surface of the semiconductor substrate, wherein n≥3.

公开(公告)号：US20220384568A1

公开(公告)日：2022-12-01

申请号：US17303275

申请日：2021-05-26

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Eric Miller ,  Indira Seshadri ,  Andrew M. Greene ,  Julien Frougier ,  Veeraraghavan S. Basker

IPC分类号： H01L29/06 ,  H01L29/423 ,  H01L29/786

摘要： An apparatus comprising a substrate, a first nanosheet device located on the substrate, and a second nanosheet device located on the substrate, wherein the second nanosheet device is adjacent to the first nanosheet device. At least one first gate located on the first nanosheet device, wherein the at least one first gate has a first width. At least one second gate located on the second nanosheet device, wherein the at least one second gate has a second width, wherein the first width and the second width are substantially the same. A diffusion break located between the first nanosheet device and the second nanosheet device, wherein the diffusion break prevents the first nanosheet device from contacting the second nanosheet device, wherein the diffusion break has a third width, wherein the third width is larger than the first width and the second width.

公开(公告)号：US11251182B2

公开(公告)日：2022-02-15

申请号：US16821604

申请日：2020-03-17

申请人： International Business Machines Corporation

发明人： Tsung-Sheng Kang ,  Tao Li ,  Ardasheir Rahman ,  Praveen Joseph ,  Indira Seshadri ,  Ekmini Anuja De Silva

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L21/8238 ,  H01L27/12 ,  H01L29/06 ,  H01L21/02 ,  H01L29/66

摘要： A semiconductor structure includes a first semiconducting channel having a plurality of vertical nanowires and a second semiconducting channel having a plurality of vertical nanowires. The first semiconducting channel and the second semiconducting channel are configured to be in a stacked configuration. The plurality of vertical nanowires of the first semiconducting channel are configured to be in alternating positions relative to the plurality of vertical nanowires of the second semiconducting channel.

公开(公告)号：US11226561B2

公开(公告)日：2022-01-18

申请号：US16101411

申请日：2018-08-11

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Chi-Chun Liu ,  Indira Seshadri ,  Kristin Schmidt ,  Nelson Felix ,  Daniel Sanders ,  Jing Guo ,  Ekmini Anuja De Silva ,  Hoa Truong

IPC分类号： G03F7/11 ,  G03F7/09 ,  G03F7/004

摘要： A self-priming resist may be formed from a first random copolymer forming a resist and a polymer brush having the general formula poly(A-r-B)-C-D, wherein A is a first polymer unit, B is a second polymer unit, wherein A and B are the same or different polymer units, C is a cleavable unit, D is a grafting group and r indicates that poly(A-r-B) is a second random copolymer formed from the first and second polymer units. The first random copolymer may be the same or different from the second random polymer. The self-priming resist can create a one-step method for forming an adhesion layer and resist by using the resist/brush blend.

公开(公告)号：US20210296438A1

公开(公告)日：2021-09-23

申请号：US17343291

申请日：2021-06-09

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Praveen Joseph ,  Tao Li ,  Indira Seshadri ,  Ekmini A. De Silva

IPC分类号： H01L29/06 ,  H01L29/78 ,  H01L29/66 ,  H01L21/311 ,  H01L21/8238 ,  H01L27/092 ,  H01L21/306 ,  H01L21/02 ,  H01L21/3065 ,  H01L21/762

摘要： Semiconductor devices and methods of forming the same include forming a first dielectric layer around a semiconductor fin, formed from a first dielectric material, to a target height lower than a height of the semiconductor fin. A second dielectric layer is deposited on the first dielectric layer and is formed from a second dielectric material. A third dielectric layer, formed from the first dielectric material, is formed on the second dielectric layer. The second dielectric layer is etched away to expose a gap on the semiconductor fin. A portion of the semiconductor fin that is exposed in the gap is oxidized to form an isolation layer.

公开(公告)号：US20200266100A1

公开(公告)日：2020-08-20

申请号：US16277528

申请日：2019-02-15

申请人： International Business Machines Corporation

发明人： Nicole Saulnier ,  Indira Seshadri ,  Lawrence A. Clevenger ,  Leigh Anne H. Clevenger ,  Gauri Karve ,  Fee Li Lie ,  Isabel Cristina Chu ,  Hosadurga Shobha ,  Ekmini A. De Silva

IPC分类号： H01L21/768 ,  H01L21/311

摘要： Techniques to improve CD width and depth uniformity between features with different layout densities are provided. In one aspect, a method of forming a contact structure includes: patterning features in different regions of a dielectric at different layout densities whereby, due to etch loading effects, the features are patterned to different depths in the dielectric and have different bottom dimensions; depositing a sacrificial spacer into/lining the features whereby some of the features are pinched-off by the sacrificial spacer; opening up the sacrificial spacer at bottoms of one or more of the features that are not pinched-off by the sacrificial spacer; selectively extending the one or more features in the dielectric, such that the one or more features have a discontinuous taper with a stepped sidewall profile; removing the sacrificial spacer; and filling the features with a conductive material to form the contact structure. A contact structure is also provided.