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1.发明申请公开(公告)号：US20220351056A1
公开(公告)日：2022-11-03
申请号：US17246543
申请日：2021-04-30
发明人： Maira G. de Bayser , Geeth Ranmal de Mel , Mathias B. Steiner , Mohab Elkaref , Ronaldo Giro , Bruce Gordon Elmegreen , Christopher R. Gibson , David Boaz , David S. Braines , Dean Clarke , Dmitry Zubarev , Flaviu Cipcigan , Kristin Schmidt , Lori French , Stacey Gifford
摘要： A computer implemented method generating query results is provided. The method includes generating by a computer processor, a training model through artificial intelligence. The training model may be based on annotated data. A knowledge base for a subject matter may be generated based on the training model. The knowledge base may be based on content from document sources related to the subject matter. A natural language query input from a user may be received. An intent and requirements for satisfying the intent may be inferred by the computer processor. The knowledge base may be referenced to extract information related to the intent and requirements, from documents in the knowledge base. Relationships between the extracted information and the requirements may be correlated from the documents in the knowledge base. In addition, query results may be displayed to the user. The query results are based on the correlated relationships.
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公开(公告)号：US20190237562A1
公开(公告)日：2019-08-01
申请号：US15886539
申请日：2018-02-01
发明人： Chi-Chun Liu , Chun Wing Yeung , Robin Hsin Kuo Chao , Zhenxing Bi , Kristin Schmidt , Yann Mignot
IPC分类号： H01L29/66 , H01L21/311 , H01L21/3105 , H01L29/40 , H01L29/423
摘要： Techniques for VFET gate length control are provided. In one aspect, a method of forming a VFET device includes: patterning fins in a substrate; forming first polymer spacers alongside opposite sidewalls of the fins; forming second polymer spacers offset from the fins by the first polymer spacers; removing the first polymer spacers selective to the second polymer spacers; reflowing the second polymer spacers to close a gap to the fins; forming a cladding layer above the second polymer spacers; removing the second polymer spacers; forming gates along opposite sidewalls of the fins exposed in between the bottom spacers and the cladding layer, wherein the gates have a gate length Lg set by removal of the second polymer spacers; forming top spacers above the cladding layer; and forming top source and drains above the top spacers. A VFET device is also provided.
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公开(公告)号：US20190221428A1
公开(公告)日：2019-07-18
申请号：US15871499
申请日：2018-01-15
发明人： Sean D. Burns , Sivananda K. Kanakasabapathy , Kafai Lai , Chi-Chun Liu , Kristin Schmidt , Ankit Vora
IPC分类号： H01L21/033 , G03F7/00 , G03F7/004 , G03F7/038 , G03F7/16
CPC分类号： H01L21/0338 , G03F7/0002 , G03F7/0045 , G03F7/038 , G03F7/16 , H01L21/0332 , H01L21/0337
摘要： Lithographic patterning methods are provided which implement directed self-assembly (DSA) of block copolymers to enable self-aligned cutting of features. A first layer and second layer of material are formed on a substrate. The second layer of material is lithographically patterning to form a guiding pattern. A DSA process is performed to form a block copolymer pattern around the guiding pattern, which comprises a repeating block chain that includes at least a first block material and a second block material, which have etch selectivity with respect to each other. A selective etch process is performed to selectively etching one of the first block material and the second block material to form self-aligned openings in the block copolymer pattern which expose portions of the first layer of material. The first layer of material is patterned by etching the exposed portions of the first layer of material.
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公开(公告)号：US09847232B1
公开(公告)日：2017-12-19
申请号：US15468772
申请日：2017-03-24
发明人： Hitoshi Osaki , Kristin Schmidt , Chi-Chun Liu
IPC分类号： H01L21/311 , G03F7/11 , G03F7/039 , G03F7/16 , G03F7/20 , G03F7/32 , H01L21/768
CPC分类号： H01L21/76802 , G03F7/0002 , G03F7/405 , H01L21/3086 , H01L21/76832
摘要： A pattern-forming method includes forming a base pattern having recessed portions on a front face side of a substrate. A first composition is applied on lateral faces of the recessed portions of the base pattern, to form a coating. The first composition includes a first polymer which includes on at least one end of a main chain thereof a group capable of interacting with the base pattern. A surface of the coating is contacted with a highly polar solvent. The recessed portions are filled with a second composition. The second composition includes a second polymer which is capable of forming a phase separation structure through directed self-assembly. Phase separation is permitted in the second composition to form phases. A part of the phases is removed to form a miniaturized pattern. The substrate is etched directly or indirectly using the miniaturized pattern as a mask.
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公开(公告)号：US20170114246A1
公开(公告)日：2017-04-27
申请号：US14919070
申请日：2015-10-21
发明人： Noel Arellano , Joy Cheng , Teddie P. Magbitang , Jed W. Pitera , Daniel P. Sanders , Kristin Schmidt , Hoa D. Truong , Ankit Vora
IPC分类号： C09D169/00 , C08J7/04 , C09D167/04 , C08G63/64 , C08G63/08
CPC分类号： C09D169/005 , C08F212/08 , C08G63/08 , C08G63/64 , C08G63/6822 , C08G64/18 , C08J7/047 , C08J2333/12 , C08J2467/04 , C08J2469/00 , C09D125/08 , C09D153/00 , C09D167/04 , C09D169/00 , G03F7/0002
摘要： Block copolymers (BCPs) for self-assembly applications comprise a linear fluorinated linking group L′ joining a pair of adjacent blocks. A film layer comprising a BCP, which is disposed on an underlayer and in contact with an atmosphere, is capable of forming a perpendicularly oriented domain pattern when the underlayer is preferentially wetted by one domain of an otherwise identical self-assembled BCP in which all fluorines of L′ are replaced by hydrogen. The BCP can be a low-chi or high-chi BCP. In a preferred embodiment, the BCP comprises a styrene-based first block, and a second block comprises a carbonate and/or ester repeat unit formed by ring opening polymerization of a cyclic carbonate and/or cyclic ester monomer. The linking group L′ has a lower surface energy than each of the polymer blocks.
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公开(公告)号：US11226561B2
公开(公告)日：2022-01-18
申请号：US16101411
申请日：2018-08-11
发明人： Chi-Chun Liu , Indira Seshadri , Kristin Schmidt , Nelson Felix , Daniel Sanders , Jing Guo , Ekmini Anuja De Silva , Hoa Truong
摘要： A self-priming resist may be formed from a first random copolymer forming a resist and a polymer brush having the general formula poly(A-r-B)-C-D, wherein A is a first polymer unit, B is a second polymer unit, wherein A and B are the same or different polymer units, C is a cleavable unit, D is a grafting group and r indicates that poly(A-r-B) is a second random copolymer formed from the first and second polymer units. The first random copolymer may be the same or different from the second random polymer. The self-priming resist can create a one-step method for forming an adhesion layer and resist by using the resist/brush blend.
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公开(公告)号：US10707326B2
公开(公告)日：2020-07-07
申请号：US16282384
申请日：2019-02-22
发明人： Chi-Chun Liu , Sanjay Mehta , Luciana Meli , Muthumanickam Sankarapandian , Kristin Schmidt , Ankit Vora
IPC分类号： H01L29/66 , H01L21/8238 , H01L29/78 , H01L29/08 , H01L27/088 , H01L29/423 , H01L29/786 , H01L29/417
摘要： A vertical field-effect transistor and a method for fabricating the same. The vertical field-effect transistor includes a substrate and a bottom source/drain region. The vertical field-effect transistor also includes at least one fin structure, and further includes a bottom spacer layer. The bottom spacer layer has a substantially uniform thickness with a thickness variation of less than 3 nm. A gate structure contacts the bottom spacer layer and at least one fin structure. The method includes forming a structure including a substrate, a source/drain region, and one or more fins. A polymer brush spacer is formed in contact with at least sidewalls of the one or more fins. A polymer brush layer is formed in contact with at least the source/drain region and the polymer brush spacer. The polymer brush spacer is removed. Then, the polymer brush layer is reflowed to the sidewalls of the at least one fin.
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公开(公告)号：US10374034B1
公开(公告)日：2019-08-06
申请号：US15985189
申请日：2018-05-21
发明人： Chi-Chun Liu , Muthumanickam Sankarapandian , Kristin Schmidt , Ekmini Anuja De Silva , Noel Arellano , Robin Hsin Kuo Chao , Chun Wing Yeung , Zhenxing Bi
摘要： A method for manufacturing a semiconductor device includes forming a first nanosheet device and forming a second nanosheet device spaced apart from the first nanosheet device in respective first and second regions corresponding to first and second types. The first and second nanosheet devices respectively include a first and a second plurality of work function metal layers, and a work function metal layer extends from the first and second plurality of work function metal layers in the space between the nanosheet devices. In the method, part of the work function metal layer is removed from the space between the nanosheet devices, and the removed part of the work function metal layer is replaced with a polymer brush layer. The first plurality of work function metal layers is selectively removed from the first region with respect to the polymer brush layer.
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公开(公告)号：US09810980B1
公开(公告)日：2017-11-07
申请号：US15426523
申请日：2017-02-07
发明人： Hongyun Cottle , Cheng Chi , Chi-Chun Liu , Kristin Schmidt
IPC分类号： C03C15/00 , G03F7/00 , C30B1/04 , C30B29/58 , H01L21/027 , H01L21/02 , H01L21/311 , H01L21/3105
CPC分类号： G03F7/0002 , B81C1/00031 , B81C1/00396 , B81C1/00531 , B81C2201/0149 , C09K13/00 , C30B1/04 , C30B7/005 , C30B29/58 , C30B33/08 , H01L21/02118 , H01L21/0271 , H01L21/302 , H01L21/31058 , H01L21/31133
摘要： Graphoepitaxy directed self-assembly methods generally include grafting a conformal layer of a polymer brush onto a topographic substrate. A planarization material, which functions as a sacrificial material is coated onto the topographic substrate. The planarization material is etched back to a top surface of the topographic substrate, wherein the etch back removes the polymer brush from the top surfaces of the topographic substrate. The remaining portion of the polymer brush is protected by the remaining planarization material below the top surface of the topographic substrate, which can be removed with a solvent to provide the topographic substrate with a conformal polymer brush below the top surface of the topographic substrate. The substrate is then coated with a block copolymer and annealed to direct self-assembly of the block copolymer. The methods mitigate island and/or hole defect formation.
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公开(公告)号：US20170294341A1
公开(公告)日：2017-10-12
申请号：US15092693
申请日：2016-04-07
IPC分类号： H01L21/768 , C23F1/00 , C08G81/02
CPC分类号： H01L21/0274 , B82Y10/00 , B82Y40/00 , C08G81/027 , G03F7/0002 , G03F7/002 , G03F7/165 , G03F7/20 , G03F7/2022 , G03F7/2059 , G03F7/32 , G03F7/40 , H01L21/02112 , H01L21/0271 , H01L21/3065 , H01L21/31144 , H01L21/76816
摘要： High-chi diblock copolymers are disclosed whose self-assembly properties are suitable for forming hole and bar openings for conductive interconnects in a multi-layered structure. The hole and bar openings have reduced critical dimension, improved uniformity, and improved placement error compared to the industry standard poly(styrene)-b-poly(methyl methacrylate) block copolymer (PS-b-PMMA). The BCPs comprise a poly(styrene) block, which can optionally include repeat units derived from trimethylsilyl styrene, and a second block that can be a polycarbonate block or a polyester block. Block copolymers comprising a fluorinated linking group L′ comprising 1-25 fluorines between the blocks can provide further improvement in uniformity of the openings.
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