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    PHASE CHANGE MEMORY DEVICE
    2.
    发明申请
    PHASE CHANGE MEMORY DEVICE 有权

    公开(公告)号：US20210135104A1

    公开(公告)日：2021-05-06

    申请号：US16671748

    申请日：2019-11-01

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Injo Ok ,  Kevin W. Brew ,  Timothy M. Philip ,  Muthumanickam Sankarapandian ,  Sanjay C. Mehta ,  Nicole Saulnier ,  Steven M. Mcdermott

    IPC分类号： H01L45/00 ,  G11C13/00

    摘要： A phase change material memory device is provided. The phase change material memory device includes one or more electrical contacts in a substrate, and a dielectric cover layer on the electrical contacts and substrate. The phase change material memory device further includes a lower conductive shell in a trench above one of the one or more electrical contacts, and an upper conductive shell on the lower conductive shell in the trench. The phase change material memory device further includes a conductive plug filling the upper conductive shell. The phase change material memory device further includes a liner layer on the dielectric cover layer and conductive plug, and a phase change material block on the liner layer on the dielectric cover layer and in the trench.

    Mask process aware calibration using mask pattern fidelity inspections
    3.
    发明授权
    Mask process aware calibration using mask pattern fidelity inspections 有权

    公开(公告)号：US10725454B2

    公开(公告)日：2020-07-28

    申请号：US16186980

    申请日：2018-11-12

    申请人： International Business Machines Corporation

    发明人： Ravi K. Bonam ,  Nicole Saulnier ,  Michael Crouse ,  Derren N. Dunn

    IPC分类号： G05B19/41 ,  G05B19/4155

    摘要： Techniques for modifying a mask fabrication process based the identification of an abnormality in a pattern of a fabricated lithography mask are disclosed including comparing a fabricated lithography mask to a lithography mask design where the fabricated lithography mask is fabricated based at least in part on the lithography mask design using a mask fabrication process. An abnormality in a pattern of the fabricated lithography mask relative to a corresponding one of the plurality of patterns in the lithography mask design is identified based at least in part on the comparison of the fabricated lithography mask to the lithography mask design. A calibrated mask model is generated based at least in part on the identified abnormality in the pattern of the fabricated lithography mask and the mask fabrication process is modified based at least in part on the calibrated mask model.

    CONFINED BRIDGE CELL PHASE CHANGE MEMORY
    9.
    发明申请
    CONFINED BRIDGE CELL PHASE CHANGE MEMORY 有权

    公开(公告)号：US20230075622A1

    公开(公告)日：2023-03-09

    申请号：US17447073

    申请日：2021-09-08

    申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

    发明人： Injo Ok ,  Andrew Herbert Simon ,  Kevin W. Brew ,  Muthumanickam Sankarapandian ,  Steven Michael McDermott ,  Nicole Saulnier

    IPC分类号： H01L45/00

    摘要： A phase change memory bridge cell comprising a dielectric layer located on top of a at least one electrode, wherein a trench is located in the dielectric layer. A first liner located at the bottom of the trench in the dielectric layer and the first liner is located on the sidewalls of the dielectric layer that forms the sidewalls of the trench. A phase change memory material located on top of the first liner, wherein a top surface of the phase change memory material is aligned with a top surface of the dielectric layer, wherein the dielectric layer is located adjacent to and surrounding the vertical sidewalls of the phase change memory material, wherein a top surface of the phase change memory material is flush with a top surface of the dielectric layer.