公开(公告)号：US20160093711A1

公开(公告)日：2016-03-31

申请号：US14315079

申请日：2014-06-25

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Zhendong Hong ,  Paul Besser ,  Kisik Choi ,  Amol Joshi ,  Olov Karlsson ,  Susie Tzeng

IPC: H01L29/49 ,  H01L21/285 ,  H01L29/423 ,  H01L21/28

CPC classification number: H01L29/4966 ,  H01L21/28088 ,  H01L21/28185 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66795 ,  H01L29/785

Abstract: Devices with lightly-doped semiconductor channels (e.g., FinFETs) need mid-gap (˜4.6-4.7 eV) work-function layers, preferably with low resistivity and a wide process window, in the gate stack. Tantalum carbide (TaC) has a mid-gap work function that is insensitive to thickness. TaC can be deposited with good adhesion on high-k materials or on optional metal-nitride cap layers. TaC can also serve as the fill metal, or it can be used with other fills such as tungsten (W) or aluminum (Al). The TaC may be sputtered from a TaC target, deposited by ALD or CVD using TaCl4 and TMA, or produced by methane treatment of deposited Ta. Al may be added to tune the threshold voltage.

Abstract translation: 具有轻掺杂半导体通道（例如，FinFET）的器件在栅极堆叠中需要中间隙（〜4.6-6.7eV）的功函数层，优选地具有低电阻率和宽的工艺窗口。 碳化钽（TaC）具有对厚度不敏感的中间间隙功能。 可以在高k材料或任选的金属氮化物盖层上沉积具有良好粘附性的TaC。 TaC也可以作为填充金属，也可以与钨（W）或铝（Al）等其他填料一起使用。 TaC可以从TaC靶溅射，通过ALD或CVD使用TaCl4和TMA沉积，或通过沉积的Ta的甲烷处理产生。 可以添加Al来调节阈值电压。

公开(公告)号：US20150303057A1

公开(公告)日：2015-10-22

申请号：US14253906

申请日：2014-04-16

Applicant: GLOBALFOUNDRIES, Inc. ,  Intermolecular, Inc.

Inventor： Bongki Lee ,  Paul Besser ,  Kevin Kashefi ,  Olov Karlsson ,  Ashish Bodke ,  Ratsamee Limdulpaiboon ,  Divya Pisharoty ,  Nobi Fuchigami

IPC: H01L21/02 ,  H01L29/51 ,  H01L21/28

CPC classification number: H01L21/02181 ,  H01L21/02164 ,  H01L21/02321 ,  H01L21/0234 ,  H01L21/02362 ,  H01L21/28176 ,  H01L21/28185 ,  H01L21/28202 ,  H01L21/3105 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: Integrated circuits and methods for fabricating integrated circuits are provided. In one example, a method for fabricating an integrated circuit includes forming an interlayer of dielectric oxide material in a FET region and overlying a semiconductor substrate. A high-K dielectric layer is deposited overlying the interlayer. Fluorine is incorporated into the interlayer and/or the high-K dielectric layer.

Abstract translation: 提供了用于制造集成电路的集成电路和方法。 在一个示例中，制造集成电路的方法包括在FET区域中形成电介质氧化物材料的中间层并覆盖在半导体衬底上。 沉积在中间层上方的高K电介质层。 氟被并入到中间层和/或高K电介质层中。

公开(公告)号：US20150105308A1

公开(公告)日：2015-04-16

申请号：US14574995

申请日：2014-12-18

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: C11D11/00 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  H01L21/67 ,  H01L21/02

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。

公开(公告)号：US08853081B2

公开(公告)日：2014-10-07

申请号：US13728079

申请日：2012-12-27

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Olov Karlsson ,  Sven Metzger

IPC: H01L21/306

CPC classification number: H01L21/306 ,  H01L21/266 ,  H01L21/31133 ,  H01L29/4966 ,  H01L29/517

Abstract: Provided are methods for processing semiconductor substrates to remove high-dose ion implanted (HDI) photoresist structures without damaging other structures made of titanium nitride, tantalum nitride, hafnium oxide, and/or hafnium silicon oxide. The removal is performed using a mixture of an organic solvent, an oxidant, a metal-based catalyst, and one of a base or an acid. Some examples of suitable organic solvents include dimethyl sulfoxide, n-ethyl pyrrolidone, monomethyl ether, and ethyl lactate. Transition metals in their zero-oxidation state, such as metallic iron or metallic chromium, may be used as catalysts in this mixture. In some embodiments, a mixture includes ethyl lactate, of tetra-methyl ammonium hydroxide, and less than 1% by weight of the metal-based catalyst. The etching rate of the HDI photoresist may be at least about 100 Angstroms per minute, while other structures may remain substantially intact.

Abstract translation: 提供了用于处理半导体衬底以去除高剂量离子注入（HDI）光致抗蚀剂结构而不损坏由氮化钛，氮化钽，氧化铪和/或氧化铪形成的其它结构的半导体衬底的方法。 使用有机溶剂，氧化剂，金属类催化剂和碱或酸之一的混合物进行除去。 合适的有机溶剂的一些实例包括二甲基亚砜，正乙基吡咯烷酮，单甲基醚和乳酸乙酯。 过渡金属的零氧化态，如金属铁或金属铬，可用作该混合物中的催化剂。 在一些实施方案中，混合物包括四甲基氢氧化铵的乳酸乙酯和小于1重量％的金属基催化剂。 HDI光致抗蚀剂的蚀刻速率可以为每分钟至少约100埃，而其它结构可保持基本完整。

公开(公告)号：US09399753B2

公开(公告)日：2016-07-26

申请号：US14574995

申请日：2014-12-18

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: C11D11/00 ,  H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L21/324 ,  H01L29/49 ,  C11D7/04 ,  C11D7/08 ,  C11D7/26 ,  H01L21/67

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。

公开(公告)号：US09059156B2

公开(公告)日：2015-06-16

申请号：US14090822

申请日：2013-11-26

Applicant: Intermolecular Inc.

Inventor： Zhendong Hong ,  Ashish Bodke ,  Olov Karlsson

IPC: H01L21/336 ,  H01L29/49 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/4975 ,  H01L21/28097 ,  H01L21/823835 ,  H01L29/66477 ,  H01L29/66545 ,  H01L29/6659 ,  H01L29/66795 ,  H01L29/78 ,  H01L29/7833

Abstract: Methods to form metal gate transistor devices are disclosed. Erbium silicide layers can be used in CMOS transistors in which the work function of the erbium silicide layers can be tuned for use in PMOS and NMOS devices. A nanolaminate sputtering approach can be used in which silicon and erbium layers are alternatingly deposited to determine optimum layer properties, composition profiles, and erbium to silicon ratios for a particular gate stack.

Abstract translation: 公开了形成金属栅极晶体管器件的方法。 矽硅化物层可用于CMOS晶体管，其中铒硅化物层的功函数可调谐用于PMOS和NMOS器件。 可以使用Nanoaminate溅射方法，其中交替沉积硅和铒层以确定特定栅极堆叠的最佳层性质，组成分布和铒与硅比。

公开(公告)号：US20140187041A1

公开(公告)日：2014-07-03

申请号：US13728079

申请日：2012-12-27

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  Olov Karlsson ,  Sven Metzger

IPC: H01L21/306

CPC classification number: H01L21/306 ,  H01L21/266 ,  H01L21/31133 ,  H01L29/4966 ,  H01L29/517

Abstract: Provided are methods for processing semiconductor substrates to remove high-dose ion implanted (HDI) photoresist structures without damaging other structures made of titanium nitride, tantalum nitride, hafnium oxide, and/or hafnium silicon oxide. The removal is performed using a mixture of an organic solvent, an oxidant, a metal-based catalyst, and one of a base or an acid. Some examples of suitable organic solvents include dimethyl sulfoxide, n-ethyl pyrrolidone, monomethyl ether, and ethyl lactate. Transition metals in their zero-oxidation state, such as metallic iron or metallic chromium, may be used as catalysts in this mixture. In some embodiments, a mixture includes ethyl lactate, of tetra-methyl ammonium hydroxide, and less than 1% by weight of the metal-based catalyst. The etching rate of the HDI photoresist may be at least about 100 Angstroms per minute, while other structures may remain substantially intact.

Abstract translation: 提供了用于处理半导体衬底以去除高剂量离子注入（HDI）光致抗蚀剂结构而不损坏由氮化钛，氮化钽，氧化铪和/或氧化铪形成的其它结构的半导体衬底的方法。 使用有机溶剂，氧化剂，金属类催化剂和碱或酸之一的混合物进行除去。 合适的有机溶剂的一些实例包括二甲基亚砜，正乙基吡咯烷酮，单甲基醚和乳酸乙酯。 过渡金属的零氧化态，如金属铁或金属铬，可用作该混合物中的催化剂。 在一些实施方案中，混合物包括四甲基氢氧化铵的乳酸乙酯和小于1重量％的金属基催化剂。 HDI光致抗蚀剂的蚀刻速率可以为每分钟至少约100埃，而其它结构可保持基本完整。

公开(公告)号：US08859431B2

公开(公告)日：2014-10-14

申请号：US13911200

申请日：2013-06-06

Applicant: Intermolecular Inc.

Inventor： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

IPC: H01L21/44 ,  H01L21/28 ,  H01L21/324 ,  H01L21/285 ,  H01L21/67 ,  H01L29/66 ,  H01L21/02

CPC classification number: H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

Abstract: The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。

公开(公告)号：US20140262749A1

公开(公告)日：2014-09-18

申请号：US13804265

申请日：2013-03-14

Applicant: Intermolecular, Inc.

Inventor： Ashish Bodke ,  Olov Karlsson ,  Kevin Kashefi ,  Chi-I Lang ,  Dipankar Pramanik ,  Hong Sheng Yang ,  Xuena Zhang

IPC: C23C14/35

CPC classification number: B01J19/0046 ,  B01J2219/0043 ,  B01J2219/00443 ,  B01J2219/00527 ,  B01J2219/00635 ,  B01J2219/0075 ,  B01J2219/00756 ,  C23C14/042 ,  C23C14/345

Abstract: Combinatorial processing of a substrate comprising site-isolated sputter deposition and site-isolated plasma processing can be performed in a same process chamber. The process chamber, configured to perform sputter deposition and plasma processing, comprises a grounded shield having at least an aperture disposed above the substrate to form a small, dark space gap to reduce or eliminate any plasma formation within the gap. The plasma processing may include plasma etching or plasma surface treatment.

Abstract translation: 包含现场分离的溅射沉积和位置分离等离子体处理的基板的组合处理可以在相同的处理室中进行。 被配置为执行溅射沉积和等离子体处理的处理室包括接地屏蔽，其具有设置在衬底上方的至少一个孔，以形成小的，较暗的空间间隙，以减少或消除间隙内的任何等离子体形成。 等离子体处理可以包括等离子体蚀刻或等离子体表面处理。

公开(公告)号：US08809140B2

公开(公告)日：2014-08-19

申请号：US13953446

申请日：2013-07-29

Applicant: Intermolecular Inc. ,  GLOBALFOUNDRIES, Inc.

Inventor： Anh Duong ,  Clemens Fitz ,  Olov Karlsson

IPC: H01L21/336

CPC classification number: C11D11/0047 ,  C11D7/04 ,  C11D7/08 ,  C11D7/265 ,  H01L21/02057 ,  H01L21/02068 ,  H01L21/28052 ,  H01L21/324 ,  H01L21/6704 ,  H01L29/4975 ,  H01L29/66477 ,  H01L29/665 ,  H01L29/66568

Abstract: A method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process is disclosed, including a multi-step residue cleaning, including exposing the substrate to an aqua regia solution, followed by an exposure to a solution having hydrochloric acid and hydrogen peroxide. The SC2 solution can further react with remaining platinum residues, rendering it more soluble in an aqueous solution and thereby dissolving it from the surface of the substrate.

Abstract translation: 公开了一种在镍铂硅化过程中从半导体衬底中清除残余物的方法，包括多步残渣清洗，包括将底物暴露于王水溶液中，然后暴露于含有盐酸和过氧化氢的溶液中。 SC2溶液可以与剩余的铂残留物进一步反应，使其更易溶于水溶液，从而从基底表面溶解。