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    Ultrasonic sensing device
    1.
    发明授权
    Ultrasonic sensing device 有权

    公开(公告)号：US10461124B2

    公开(公告)日：2019-10-29

    申请号：US15670976

    申请日：2017-08-07

    Applicant: InvenSense, Inc.

    Inventor： Renata Melamud Berger ,  Julius Ming-Lin Tsai ,  Stephen Lloyd

    IPC: G01N29/24 ,  H01L41/113 ,  G06K9/00 ,  H01L41/08 ,  H01L27/20 ,  G01N29/28 ,  B81C1/00

    Abstract: An electronic device comprises a CMOS substrate having a first surface and a second surface opposite the first surface. A plurality of ultrasonic transducers is provided having a transmit/receive surface. A contact surface is piezoelectrically associated with the plurality of ultrasonic transducers and is formed on the first surface of the CMOS substrate. The plurality of ultrasonic transducers is disposed on the second surface of the CMOS substrate, with the transmit/receive side attached to the second surface thereof such that the CMOS substrate is between the plurality of ultrasonic transducers and the platen. An image sensing system is also provided, together with a method for ultrasonic sensing in the electronic device.

    ELECTRICAL TUNING OF PARAMETERS OF PIEZOELECTRIC ACTUATED TRANSDUCERS
    4.
    发明申请
    ELECTRICAL TUNING OF PARAMETERS OF PIEZOELECTRIC ACTUATED TRANSDUCERS 审中-公开
    压电式传感器参数的电气调谐

    公开(公告)号：US20150358740A1

    公开(公告)日：2015-12-10

    申请号：US14295881

    申请日：2014-06-04

    Applicant: INVENSENSE, INC.

    Inventor： Julius Ming-Lin Tsai ,  Stephen Lloyd

    IPC: H04R17/10 ,  A61B5/117 ,  G01N29/36 ,  H04R3/04

    CPC classification number: G01N29/36 ,  A61B5/1172 ,  A61B2562/02 ,  H04R3/04 ,  H04R17/00 ,  H04R29/001 ,  H04R2201/003 ,  H04R2217/03

    Abstract: Parameters, such as, quality factor and/or resonance frequency of an acoustic transducer can be electrically tuned. The acoustic transducer can include a piezoelectric layer deposited on a silicon supporting layer, a first electrode layer deposited on the piezoelectric layer, and a second electrode layer deposited between the silicon supporting layer and piezoelectric layer. In one aspect, a resonant frequency of the piezoelectric actuated transducer is electrically tuned based on modifying a voltage across at least a portion of the first electrode layer and the second electrode layer. In another aspect, a quality factor of the piezoelectric actuated transducer is electrically tuned based on modifying a resistance across at least another portion of the first electrode layer and the second electrode layer.

    Abstract translation: 声学换能器的质量因子和/或谐振频率等参数可以被电调谐。 声换能器可以包括沉积在硅支撑层上的压电层，沉积在压电层上的第一电极层和沉积在硅支撑层和压电层之间的第二电极层。 在一个方面，基于修改第一电极层和第二电极层的至少一部分上的电压来对压电致动换能器的谐振频率进行电调谐。 在另一方面，基于改变跨越第一电极层和第二电极层的另一部分的电阻来对压电致动换能器的品质因素进行电调谐。

    Two-dimensional array of CMOS control elements
    6.
    发明授权
    Two-dimensional array of CMOS control elements 有权

    公开(公告)号：US10315222B2

    公开(公告)日：2019-06-11

    申请号：US15294130

    申请日：2016-10-14

    Applicant: InvenSense, Inc.

    Inventor： James Christian Salvia ,  Michael H. Perrott ,  Marian Voros ,  Eldwin Ng ,  Julius Ming-Lin Tsai ,  Nikhil Apte

    IPC: B60B1/00 ,  B06B1/06 ,  G06K9/00 ,  G06F3/0354 ,  H01L27/092

    Abstract: An electronic device includes a plurality of CMOS control elements arranged in a two-dimensional array, where each CMOS control element of the plurality of CMOS control elements includes two semiconductor devices. The plurality of CMOS control elements include a first subset of CMOS control elements, each CMOS control element of the first subset of CMOS control elements including a semiconductor device of a first class and a semiconductor device of a second class, and a second subset of CMOS control elements, each CMOS control element of the second subset of CMOS control elements including a semiconductor device of the first class and a semiconductor device of a third class. The plurality of CMOS control elements are arranged in the two-dimensional array such that CMOS semiconductor devices of the first class are only adjacent to other CMOS semiconductor devices of the first class, CMOS semiconductor devices of the second class are only adjacent to other CMOS semiconductor devices of the second class, and CMOS semiconductor devices of the third class are only adjacent to other CMOS semiconductor devices of the third class.

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