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公开(公告)号：US5744864A
公开(公告)日：1998-04-28
申请号：US692295
申请日：1996-08-01
IPC分类号： H01L27/146 , G02F1/136 , G02F1/1368 , H01L21/336 , H01L27/12 , H01L29/786 , H01L29/04 , H01L23/48 , H01L29/76
CPC分类号： H01L29/7869 , G02F1/1368
摘要： A semiconductor device includes a transparent switching element (1) with two connection electrodes (2, 3) of a transparent material and an interposed transparent channel region (4) of a semiconductor material provided with a transparent gate electrode (5) of a conductive material, separated from the channel region (4) by a transparent insulating layer (6). The semiconductor material is a degenerate semiconductor material with a basic material having a bandgap (10) between conduction band (11) and valence band (12) of electrons greater than 2.5 eV and a mobility of charge carriers greater than 10 cm.sup.2 /Vs provided with dopant atoms which form a fixed impurity energy level (13) adjacent or in the valence band (12) or conduction band (11) of the basic material. The degenerate semiconductor material is transparent because the absorption of visible light is not possible owing to the great bandgap (10), while also no absorption of visible light takes place through the impurity energy levels (13). The device is capable of comparatively fast switching.
摘要翻译： 半导体器件包括具有透明材料的两个连接电极（2,3）和设置有导电材料的透明栅电极（5）的半导体材料的插入透明沟道区域（4）的透明开关元件（1） ，通过透明绝缘层（6）与沟道区（4）分离。 半导体材料是具有基本材料的简并半导体材料，其具有在电子的导带（11）和价带（12）之间的带隙（10）大于2.5eV，并且电荷载流子的迁移率大于10cm 2 / Vs， 掺杂剂原子，其形成与基本材料的价带（12）或导带（11）相邻或相邻的固定杂质能级（13）。 退化的半导体材料是透明的，因为可见光的吸收由于大的带隙（10）而不可能，同时也不会通过杂质能级（13）发生可见光的吸收。 该装置能够相对快速地切换。
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公开(公告)号：US06238731B1
公开(公告)日：2001-05-29
申请号：US09390854
申请日：1999-09-07
申请人： Jacobus J. M. Ruigrok , Pieter J. Van Der Zaag , Wiepke Folkerts , Lambertus Postma , Ronald M. Wolf , Johannes F. M. Cillessen
发明人： Jacobus J. M. Ruigrok , Pieter J. Van Der Zaag , Wiepke Folkerts , Lambertus Postma , Ronald M. Wolf , Johannes F. M. Cillessen
IPC分类号： B05D512
CPC分类号： G11B5/3919 , G11B5/3922
摘要： Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.
摘要翻译： 具有头表面（103）并且包括横向于头部表面定向的磁阻元件（109）的薄膜磁头和终止于头部表面的导磁材料的磁通引导元件（107）。 与磁头表面平行延伸的磁阻元件的周边区域（109a）与磁通元件相对地形成，用于在磁阻元件和磁通引导元件之间形成磁连接。 磁导元件和磁阻元件的周边区域构成公共磁性接触面（111），而导磁元件的导磁材料是电绝缘的。
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公开(公告)号：US06205007B1
公开(公告)日：2001-03-20
申请号：US08156146
申请日：1993-11-22
申请人： Jacobus J. M. Ruigrok , Pieter J. Van Der Zaag , Wiepke Folkerts , Lambertus Postma , Ronald M. Wolf , Johannes F. M. Cillessen
发明人： Jacobus J. M. Ruigrok , Pieter J. Van Der Zaag , Wiepke Folkerts , Lambertus Postma , Ronald M. Wolf , Johannes F. M. Cillessen
IPC分类号： G11B5127
CPC分类号： G11B5/3919 , G11B5/3922
摘要： Thin-film magnetic head having a head face (103) and comprising a magnetoresistive element (109) oriented transversely to the head face and a flux-guiding element (107) of a magnetically permeable material terminating in the head face. A peripheral area (109a) of the magnetoresistive element extending parallel to the head face is present opposite the flux-guiding element for forming a magnetic connection between the magnetoresistive element and the flux-guiding element. The flux-guiding element and the peripheral area of the magnetoresistive element constitute a common magnetic contact face (111), while the magnetically permeable material of the flux-guiding element is electrically insulating.
摘要翻译： 具有头表面（103）并且包括横向于头部表面定向的磁阻元件（109）的薄膜磁头和终止于头部表面的导磁材料的磁通引导元件（107）。 与磁头表面平行延伸的磁阻元件的周边区域（109a）与磁通元件相对地形成，用于在磁阻元件和磁通引导元件之间形成磁连接。 磁导元件和磁阻元件的周边区域构成公共磁性接触面（111），而导磁元件的导磁材料是电绝缘的。
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公开(公告)号：US5512773A
公开(公告)日：1996-04-30
申请号：US359375
申请日：1994-12-20
IPC分类号： G11C11/22 , G11C11/38 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/47 , H01L29/788 , H01L29/792 , H01L29/872 , H01L29/88 , H01L49/00 , H01L27/095
CPC分类号： H01L27/11502 , G11C11/22 , G11C11/38 , H01L29/872 , H01L29/88
摘要： A switching element is provided with two electrodes (1, 2) with a semiconducting dielectric (3) therebetween, one electrode (2) having a material which forms a Schottky contact with the semiconducting dielectric (3), while a space charge region (3') of the Schottky contact forms a tunnelling barrier for electrons during operation. It is desirable in many applications for the switching element to hold a certain switching state, such as open or closed, during a longer period. The switching element may then be used, for example, as a memory element. The dielectric (3) includes a ferroelectric material with a remanent polarization which influences a dimension of the tunnelling barrier. In this manner the switching element has various switching states depending on the remanent polarization of the dielectric (3). These switching states are held until the polarization of the dielectric (3) changes.
摘要翻译： 开关元件设置有在其间具有半导体电介质（3）的两个电极（1,2），一个电极（2）具有与半导体电介质（3）形成肖特基接触的材料，而空间电荷区域（3） '）的肖特基接触在操作期间形成电子的隧道势垒。 在许多应用中期望开关元件在更长的时间段内保持一定的开关状态，例如开路或闭合。 然后，开关元件可以用作例如存储元件。 电介质（3）包括具有残留极化的铁电材料，其影响隧道势垒的尺寸。 以这种方式，取决于电介质（3）的剩余极化，开关元件具有各种开关状态。 保持这些开关状态，直到电介质（3）的极化发生变化。
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公开(公告)号：US5541422A
公开(公告)日：1996-07-30
申请号：US353844
申请日：1994-12-12
IPC分类号： G11C11/22 , G11C11/38 , G11C11/56 , H01L27/115 , H01L29/08 , H01L29/51 , H01L29/88 , H01L45/00 , H01L29/06
CPC分类号： H01L29/88 , G11C11/22 , G11C11/38 , G11C11/5657 , H01L27/115 , H01L29/0895 , H01L29/51 , H01L45/00
摘要： The invention relates to a tunnel diode provided with two metallically conducting electrodes (1, 2) with an insulating dielectric (3) in between, which forms a barrier with a barrier level for electrons and which has a thickness such that electrons can tunnel through the barrier from the one to the other electrode. Such a tunnel diode has the disadvantage that it has no memory. In many applications it is desirable for the tunnel diode to hold a certain switching state, such as open/closed. According to the invention, the tunnel diode is characterized in that the dielectric (3) comprises a layer of a material which is ferroelectric at room temperature with a remanent polarization which influences the barrier level. It is achieved thereby that the tunnel diode has various switching states in dependence on the remanent polarization of the dielectric (3). The switching state is maintained until the polarization of the dielectric (3) changes.
摘要翻译： 本发明涉及一种隧道二极管，其设置有两个在其间具有绝缘电介质（3）的金属导电电极（1,2），其形成具有用于电子的势垒级别的势垒，并且具有使得电子能穿过 从一个到另一个电极的屏障。 这种隧道二极管的缺点是它没有存储器。 在许多应用中，期望隧道二极管保持一定的开关状态，例如开/关。 根据本发明，隧道二极管的特征在于，电介质（3）包括在室温下铁电的材料层，其具有影响势垒层的剩余极化。 因此，隧道二极管根据电介质（3）的剩余极化具有各种开关状态。 保持开关状态，直到电介质（3）的极化发生变化。
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公开(公告)号：US06417753B1
公开(公告)日：2002-07-09
申请号：US09506544
申请日：2000-02-17
IPC分类号： H01F1706
CPC分类号： H01F27/346
摘要： A planar magnetic device with vertically oriented coil windings having a cross-section of a core with a torroidally-shaped winding structure taken transverse to the plane of the winding structure having two adjacent “winding windows” where the coils are present. One or more gaps in the core materials surrounding the windings store most of the energy generated by the inductor. The gap of height of at least one half the height of the winding structure is confined to the area between the winding cross-sections. Furthermore, in another aspect of the invention the gap is filled with a multi-layer structure of an alternating mono-layer of equally sized ferrite particles and a layer of synthetic resin.
摘要翻译： 具有垂直取向的线圈绕组的平面磁性装置，其具有横截于所述绕组结构的平面的具有环形缠绕结构的芯的横截面，所述绕组结构的平面具有两个相邻的线圈的“绕组窗”。 围绕绕组的芯材料中的一个或多个间隙存储由电感器产生的大部分能量。 绕组结构的高度的至少一半的高度间隙限制在绕组横截面之间的面积。 此外，在本发明的另一方面，间隙填充有均匀尺寸的铁氧体颗粒和合成树脂层的交替单层的多层结构。
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公开(公告)号：US06252487B1
公开(公告)日：2001-06-26
申请号：US08963938
申请日：1997-11-04
申请人： Ronald M. Wolf , Jose Azevedo
发明人： Ronald M. Wolf , Jose Azevedo
IPC分类号： H01F2702
CPC分类号： H01F27/2847 , H01F38/08 , H01F2027/2857 , H01F2027/2861
摘要： A high-leakage planar magnetic component such as an inductor, having a winding structure in which flat winding turns are oriented transverse to the plane of the winding structure, exhibits significantly lower winding losses than components having a stacked arrangement of flat winding turns parallel to the plane of the winding structure. A dense winding structure having such a transverse orientation can readily be made by forming a flat conductor into a coil using conventional wire winding techniques.
摘要翻译： 具有绕组结构的高漏电平面磁性部件，其平面绕组匝横向于绕组结构的平面，其绕组损耗显着低于具有平行于 平面的绕组结构。 具有这种横向取向的致密的绕组结构可以通过使用常规的绕线技术将扁平导体形成线圈而容易地制成。
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公开(公告)号：US07529012B2
公开(公告)日：2009-05-05
申请号：US10557378
申请日：2004-05-13
申请人： Robert A. Hayes , Bokke J. Feenstra , Leendert M. Hage , Ronald M. Wolf , Ewout V. Morks , Patrice G. C. Jaulneau , Ivo G. J. Camps , Lucas J. M. Schlangen
发明人： Robert A. Hayes , Bokke J. Feenstra , Leendert M. Hage , Ronald M. Wolf , Ewout V. Morks , Patrice G. C. Jaulneau , Ivo G. J. Camps , Lucas J. M. Schlangen
IPC分类号： G02B26/02
CPC分类号： G02B6/3538 , G02B26/005
摘要： An optical switch, e.g., a display device based on layer break up or layer displacement having at least two different states, in which one of the fluids, e.g., oil in a first state, adjoins at least a first support plate and, in the second state, the other fluid at least partly adjoins the first support plate, in which picture elements are separated by areas having a hydrophilic surface.
摘要翻译： 光开关，例如基于具有至少两种不同状态的层破裂或层位移的显示装置，其中流体（例如，处于第一状态的油）与至少第一支撑板相邻，并且在 第二状态，其他流体至少部分地邻接第一支撑板，其中图像元素由具有亲水表面的区域分开。
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公开(公告)号：US20080251809A1
公开(公告)日：2008-10-16
申请号：US11569702
申请日：2005-05-25
IPC分类号： H01L33/00
摘要： Light-emitting diode (LED) comprising a translucent substrate of α-Al2O3 or SiC and a first layer of a light-emitting semiconductor material grown on a first side of said substrate, a first electrode and a second electrode, wherein said substrate is polycrystalline. The average grain size of the polycrystalline substrate is preferably of the same order as the wavelength of the light emitted by the semiconductor material during use of the LED.
摘要翻译： 包含α-Al 2 O 3或SiC的半透明基板的发光二极管（LED）和在第一侧生长的发光半导体材料的第一层 的第一电极和第二电极，其中所述衬底是多晶的。 多晶衬底的平均晶粒尺寸优选地与在使用LED期间由半导体材料发射的光的波长相同。
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公开(公告)号：US5695863A
公开(公告)日：1997-12-09
申请号：US488539
申请日：1995-06-07
IPC分类号： G11B11/10 , G11B11/105 , G11B5/66
CPC分类号： G11B11/10586 , Y10S428/90 , Y10T428/24942 , Y10T428/265
摘要： A magneto-optical recording medium comprising a substrate and a recording layer, the recording layer comprising a bilayer structure consisting of a first layer on which a magnetic second layer is deposited, the second layer demonstrating perpendicular magnetic anisotropy and a saturation remanence of at least 90%, whereby the magnetic material of the second layer comprises an oxide of iron, and the first layer comprises an oxidic material whose in-plane lattice parameter differs from that of the magnetic material, the growth of the second layer upon the first layer being at least locally epitaxial.
摘要翻译： 一种包括基片和记录层的磁光记录介质，所述记录层包括由沉积有磁性第二层的第一层构成的双层结构，所述第二层显示出垂直的磁各向异性和至少90的饱和剩磁 ％，由此第二层的磁性材料包含铁的氧化物，并且第一层包含其面内晶格参数不同于磁性材料的氧化物质，第一层的第二层的生长在 最少局部外延。
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