公开(公告)号：US09123543B1

公开(公告)日：2015-09-01

申请号：US13274877

申请日：2011-10-17

申请人： Jung Gi Jin ,  Jong Sik Paek ,  Sung Su Park ,  Seok Bong Kim ,  Tae Kyung Hwang ,  Se Woong Cha

发明人： Jung Gi Jin ,  Jong Sik Paek ,  Sung Su Park ,  Seok Bong Kim ,  Tae Kyung Hwang ,  Se Woong Cha

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L23/00

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02351 ,  H01L2224/0236 ,  H01L2224/0239 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device and method of manufacturing the same are provided. The semiconductor device comprises a semiconductor die including a bond pad, a redistribution layer, and a solder ball. The redistribution layer is formed by sequentially plating copper and nickel, sequentially plating nickel and copper, or sequentially plating copper, nickel, and copper. The redistribution layer includes a nickel layer in order to prevent a crack from occurring in a copper layer. Further, a projection is formed in an area of the redistribution layer or a dielectric layer to which the solder ball is welded and corresponds, so that an area of the redistribution layer to which the solder ball is welded increases, thereby increasing bonding power between the solder ball and the redistribution layer.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括具有接合焊盘，再分配层和焊球的半导体管芯。 再分配层通过依次镀铜和镍，依次电镀镍和铜，或依次镀铜，镍和铜而形成。 再分布层包括镍层以防止在铜层中发生裂纹。 此外，在再分布层或焊球对应的电介质层的区域中形成突起，使得焊球焊接的再分布层的面积增加，从而增加焊球之间的结合力 焊球和再分配层。

公开(公告)号：US08058726B1

公开(公告)日：2011-11-15

申请号：US12116695

申请日：2008-05-07

申请人： Jung Gi Jin ,  Jong Sik Paek ,  Sung Su Park ,  Seok Bong Kim ,  Tae Kyung Hwang ,  Se Woong Cha

发明人： Jung Gi Jin ,  Jong Sik Paek ,  Sung Su Park ,  Seok Bong Kim ,  Tae Kyung Hwang ,  Se Woong Cha

IPC分类号： H01L23/48

CPC分类号： H01L24/05 ,  H01L23/3192 ,  H01L24/03 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/02351 ,  H01L2224/0236 ,  H01L2224/0239 ,  H01L2224/03828 ,  H01L2224/0401 ,  H01L2224/05548 ,  H01L2224/05552 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05571 ,  H01L2224/05647 ,  H01L2224/11849 ,  H01L2224/13006 ,  H01L2224/13022 ,  H01L2224/13111 ,  H01L2924/0002 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device and method of manufacturing the same are provided. The semiconductor device comprises a semiconductor die including a bond pad, a redistribution layer, and a solder ball. The redistribution layer is formed by sequentially plating copper and nickel, sequentially plating nickel and copper, or sequentially plating copper, nickel, and copper. The redistribution layer includes a nickel layer in order to prevent a crack from occurring in a copper layer. Further, a projection is formed in an area of the redistribution layer or a dielectric layer to which the solder ball is welded and corresponds, so that an area of the redistribution layer to which the solder ball is welded increases, thereby increasing bonding power between the solder ball and the redistribution layer.

摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括具有接合焊盘，再分配层和焊球的半导体管芯。 再分配层通过依次镀铜和镍，依次电镀镍和铜，或依次镀铜，镍和铜而形成。 再分布层包括镍层以防止在铜层中发生裂纹。 此外，在再分布层或焊球对应的电介质层的区域中形成突起，使得焊球焊接的再分布层的面积增加，从而增加了焊球之间的结合力 焊球和再分配层。

公开(公告)号：US20140042600A1

公开(公告)日：2014-02-13

申请号：US13962735

申请日：2013-08-08

申请人： Jin Young Kim ,  No Sun Park ,  Yoon Joo Kim ,  Choon Heung Lee ,  Jin Han Kim ,  Seung Jae Lee ,  Se Woong Cha ,  Sung Kyu Kim ,  Glenn Rinne

发明人： Jin Young Kim ,  No Sun Park ,  Yoon Joo Kim ,  Choon Heung Lee ,  Jin Han Kim ,  Seung Jae Lee ,  Se Woong Cha ,  Sung Kyu Kim ,  Glenn Rinne

IPC分类号： H01L23/00

CPC分类号： H01L25/0657 ,  H01L23/00 ,  H01L23/293 ,  H01L23/3135 ,  H01L23/3171 ,  H01L24/09 ,  H01L24/19 ,  H01L24/73 ,  H01L24/81 ,  H01L25/50 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2224/16145 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/73209 ,  H01L2224/73267 ,  H01L2924/1461 ,  H01L2924/18162 ,  H01L2924/19107 ,  H01L2924/00

摘要： A semiconductor package and manufacturing method thereof are disclosed and may include a first semiconductor device comprising a first bond pad on a first surface of the first semiconductor device, a first encapsulant material surrounding side edges of the first semiconductor device, and a redistribution layer (RDL) formed on the first surface of the first semiconductor device and on a first surface of the encapsulant material. The RDL may electrically couple the first bond pad to a second bond pad formed above the first surface of the encapsulant material. A second semiconductor device comprising a third bond pad on a first surface of the second semiconductor device may face the first surface of the first semiconductor device and be electrically coupled to the first bond pad on the first semiconductor device. The first surface of the first semiconductor device may be coplanar with the first surface of the encapsulant material.

摘要翻译： 公开了半导体封装及其制造方法，并且可以包括第一半导体器件，其包括在第一半导体器件的第一表面上的第一接合焊盘，围绕第一半导体器件的侧边缘的第一密封材料和再分配层（RDL ）形成在第一半导体器件的第一表面上并且在密封剂材料的第一表面上。 RDL可以将第一接合焊盘电耦合到形成在密封剂材料的第一表面上方的第二接合焊盘。 包括在第二半导体器件的第一表面上的第三接合焊盘的第二半导体器件可面向第一半导体器件的第一表面并且电耦合到第一半导体器件上的第一接合焊盘。 第一半导体器件的第一表面可以与密封剂材料的第一表面共面。

公开(公告)号：US20140077366A1

公开(公告)日：2014-03-20

申请号：US13963384

申请日：2013-08-09

申请人： Sung Kyu Kim ,  Jin Young Kim ,  Yoon Joo Kim ,  Jin Han Kim ,  Seung Jae Lee ,  Se Woong Cha ,  Jae Hun Bae ,  Dong Jin Kim ,  Won Myoung Ki

发明人： Sung Kyu Kim ,  Jin Young Kim ,  Yoon Joo Kim ,  Jin Han Kim ,  Seung Jae Lee ,  Se Woong Cha ,  Jae Hun Bae ,  Dong Jin Kim ,  Won Myoung Ki

IPC分类号： H01L23/498 ,  H01L23/48 ,  H01L21/56

CPC分类号： H01L23/49811 ,  H01L21/486 ,  H01L21/56 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/48 ,  H01L23/481 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/49827 ,  H01L23/5389 ,  H01L23/544 ,  H01L24/19 ,  H01L24/96 ,  H01L2223/54426 ,  H01L2223/54486 ,  H01L2224/0401 ,  H01L2224/04105 ,  H01L2224/12105 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/181 ,  H01L2924/00

摘要： A wafer level fan-out package with a fiducial die is disclosed and may include a semiconductor die and a transparent fiducial die both encapsulated in a molding compound resin, passivation layers on an upper surface and a lower surface of the molding compound resin except where redistribution layers are formed on upper and lower surfaces of the molding compound resin, and a metal pattern on a lower surface of the transparent fiducial die that is visible through an exposed upper surface of the transparent fiducial die. The pattern may comprise a standard coordinate for forming a through mold via utilizing laser drilling.

摘要翻译： 公开了具有基准晶片的晶片级扇出封装，并且可以包括半导体管芯和透明基准管芯，两者均封装在模制复合树脂中，模制复合树脂的上表面和下表面上的钝化层，除了重新分布 在模制复合树脂的上表面和下表面上形成层，并且在通过透明基准裸片的暴露的上表面可见的透明基准模具的下表面上的金属图案。 图案可以包括通过利用激光钻孔形成贯穿模的标准坐标。

公开(公告)号：US07982316B1

公开(公告)日：2011-07-19

申请号：US12025336

申请日：2008-02-04

申请人： Min Woo Lee ,  Se Woong Cha ,  Jae Hyun Shin

发明人： Min Woo Lee ,  Se Woong Cha ,  Jae Hyun Shin

IPC分类号： H01L23/48 ,  H01L23/52 ,  H01L29/40

CPC分类号： H01L23/49811 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L2224/16225 ,  H01L2224/32225 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/73204 ,  H01L2224/73265 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01079 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/18165 ,  H01L2924/3511 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/05599

摘要： A semiconductor package and method of fabricating has a substrate having conductive patterns formed thereon. A semiconductor die is attached to the substrate. An electrically connecting member is electrically coupled to the semiconductor die and the conductive patterns. A plurality of lands is coupled to the substrate. At least one land is pivotally mounted to the substrate. A first section of the pivotally mounted land is in contact with the substrate. A second section of the pivotally mounted land is floating to form a void area between the substrate and the second section. An encapsulant is used for encapsulating a top surface of the substrate, the semiconductor die, and the electrically connecting member. A solder ball is electrically coupled to each land.

摘要翻译： 半导体封装和制造方法具有形成在其上的导电图案的衬底。 半导体管芯附着在基板上。 电连接构件电耦合到半导体管芯和导电图案。 多个焊盘耦合到衬底。 至少一个平台可枢转地安装到基板上。 枢转安装的平台的第一部分与基板接触。 可枢转地安装的平台的第二部分是浮动的，以在基板和第二部分之间形成空隙区域。 密封剂用于封装衬底，半导体管芯和电连接构件的顶表面。 焊球电耦合到每个焊盘。