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公开(公告)号：US08058726B1
公开(公告)日：2011-11-15
申请号：US12116695
申请日：2008-05-07
申请人： Jung Gi Jin , Jong Sik Paek , Sung Su Park , Seok Bong Kim , Tae Kyung Hwang , Se Woong Cha
发明人： Jung Gi Jin , Jong Sik Paek , Sung Su Park , Seok Bong Kim , Tae Kyung Hwang , Se Woong Cha
IPC分类号： H01L23/48
CPC分类号： H01L24/05 , H01L23/3192 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/02351 , H01L2224/0236 , H01L2224/0239 , H01L2224/03828 , H01L2224/0401 , H01L2224/05548 , H01L2224/05552 , H01L2224/05556 , H01L2224/05557 , H01L2224/05558 , H01L2224/05571 , H01L2224/05647 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device and method of manufacturing the same are provided. The semiconductor device comprises a semiconductor die including a bond pad, a redistribution layer, and a solder ball. The redistribution layer is formed by sequentially plating copper and nickel, sequentially plating nickel and copper, or sequentially plating copper, nickel, and copper. The redistribution layer includes a nickel layer in order to prevent a crack from occurring in a copper layer. Further, a projection is formed in an area of the redistribution layer or a dielectric layer to which the solder ball is welded and corresponds, so that an area of the redistribution layer to which the solder ball is welded increases, thereby increasing bonding power between the solder ball and the redistribution layer.
摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括具有接合焊盘，再分配层和焊球的半导体管芯。 再分配层通过依次镀铜和镍，依次电镀镍和铜，或依次镀铜，镍和铜而形成。 再分布层包括镍层以防止在铜层中发生裂纹。 此外，在再分布层或焊球对应的电介质层的区域中形成突起，使得焊球焊接的再分布层的面积增加，从而增加了焊球之间的结合力 焊球和再分配层。
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公开(公告)号：US09123543B1
公开(公告)日：2015-09-01
申请号：US13274877
申请日：2011-10-17
申请人： Jung Gi Jin , Jong Sik Paek , Sung Su Park , Seok Bong Kim , Tae Kyung Hwang , Se Woong Cha
发明人： Jung Gi Jin , Jong Sik Paek , Sung Su Park , Seok Bong Kim , Tae Kyung Hwang , Se Woong Cha
CPC分类号： H01L24/05 , H01L23/3192 , H01L24/03 , H01L24/11 , H01L24/13 , H01L2224/02351 , H01L2224/0236 , H01L2224/0239 , H01L2224/03828 , H01L2224/0401 , H01L2224/05548 , H01L2224/05552 , H01L2224/05556 , H01L2224/05557 , H01L2224/05558 , H01L2224/05571 , H01L2224/05647 , H01L2224/11849 , H01L2224/13006 , H01L2224/13022 , H01L2224/13111 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/181 , H01L2924/00 , H01L2924/00012
摘要： A semiconductor device and method of manufacturing the same are provided. The semiconductor device comprises a semiconductor die including a bond pad, a redistribution layer, and a solder ball. The redistribution layer is formed by sequentially plating copper and nickel, sequentially plating nickel and copper, or sequentially plating copper, nickel, and copper. The redistribution layer includes a nickel layer in order to prevent a crack from occurring in a copper layer. Further, a projection is formed in an area of the redistribution layer or a dielectric layer to which the solder ball is welded and corresponds, so that an area of the redistribution layer to which the solder ball is welded increases, thereby increasing bonding power between the solder ball and the redistribution layer.
摘要翻译： 提供半导体器件及其制造方法。 半导体器件包括具有接合焊盘，再分配层和焊球的半导体管芯。 再分配层通过依次镀铜和镍，依次电镀镍和铜，或依次镀铜，镍和铜而形成。 再分布层包括镍层以防止在铜层中发生裂纹。 此外，在再分布层或焊球对应的电介质层的区域中形成突起，使得焊球焊接的再分布层的面积增加，从而增加焊球之间的结合力 焊球和再分配层。
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3.发明授权公开(公告)号：US08492893B1
公开(公告)日：2013-07-23
申请号：US13049647
申请日：2011-03-16
申请人： Eun Sook Sohn , Jin Young Kim , Tae Kyung Hwang
发明人： Eun Sook Sohn , Jin Young Kim , Tae Kyung Hwang
CPC分类号： H01L24/13 , H01L23/3192 , H01L23/49816 , H01L24/05 , H01L24/16 , H01L24/81 , H01L2224/0401 , H01L2224/05022 , H01L2224/05559 , H01L2224/05567 , H01L2224/05572 , H01L2224/05573 , H01L2224/05611 , H01L2224/05624 , H01L2224/05639 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05664 , H01L2224/13007 , H01L2224/13017 , H01L2224/13022 , H01L2224/13082 , H01L2224/13111 , H01L2224/13147 , H01L2224/16237 , H01L2224/73204 , H01L2224/81191 , H01L2224/81385 , H01L2224/81815 , H01L2924/00013 , H01L2924/00014 , H01L2924/01322 , H01L2924/3512 , H01L2924/35121 , H01L2924/01082 , H01L2924/00012 , H01L2924/01047 , H01L2924/01079 , H01L2924/01029 , H01L2924/0103 , H01L2924/01083 , H01L2224/13099 , H01L2224/05099 , H01L2224/05599 , H01L2224/05552 , H01L2924/00
摘要： A semiconductor device is disclosed. A conductive pillar for electrically connecting a semiconductor die to a circuit board may be gradually slimmed from the semiconductor die to the circuit board. A dummy conductive layer may be disposed between the semiconductor die and the conductive pillar. A width of an opening for opening a pattern of the circuit board may range from about 50% to 90% of the width of the lower end of the conductive pillar. Accordingly, a mechanical stress is prevented from being transmitted from the conductive pillar to the semiconductor die, or is absorbed by the dummy conductive layer, and thus, preventing cracks of the semiconductor die and a dielectric layer having a low dielectric constant.
摘要翻译： 公开了一种半导体器件。 用于将半导体管芯电连接到电路板的导电柱可以从半导体管芯到电路板逐渐变薄。 可以在半导体管芯和导电柱之间设置虚设导电层。 用于打开电路板的图案的开口的宽度可以在导电柱的下端的宽度的约50％至90％的范围内。 因此，防止机械应力从导电柱传递到半导体管芯，或被虚拟导电层吸收，从而防止半导体管芯和具有低介电常数的电介质层的裂纹。
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公开(公告)号：US08183683B1
公开(公告)日：2012-05-22
申请号：US12549068
申请日：2009-08-27
申请人： Joon Su Kim , Jung Soo Park , Tae Kyung Hwang
发明人： Joon Su Kim , Jung Soo Park , Tae Kyung Hwang
IPC分类号： H01L23/488
CPC分类号： H01L24/05 , H01L23/3128 , H01L24/03 , H01L24/29 , H01L24/32 , H01L24/45 , H01L24/48 , H01L24/73 , H01L24/85 , H01L25/0657 , H01L2224/02163 , H01L2224/04042 , H01L2224/05556 , H01L2224/05578 , H01L2224/05601 , H01L2224/05618 , H01L2224/05623 , H01L2224/05624 , H01L2224/05638 , H01L2224/2919 , H01L2224/32145 , H01L2224/32225 , H01L2224/45139 , H01L2224/45144 , H01L2224/45147 , H01L2224/48091 , H01L2224/48227 , H01L2224/48465 , H01L2224/48618 , H01L2224/48623 , H01L2224/48624 , H01L2224/48801 , H01L2224/48818 , H01L2224/48823 , H01L2224/48838 , H01L2224/73265 , H01L2224/85 , H01L2224/92247 , H01L2225/0651 , H01L2225/06565 , H01L2924/01012 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/14 , H01L2924/15311 , H01L2924/181 , H01L2924/00014 , H01L2924/01048 , H01L2924/01004 , H01L2924/0665 , H01L2924/00012 , H01L2224/48824 , H01L2924/00 , H01L2224/48638
摘要： A semiconductor device is provided. The semiconductor device comprises a semiconductor die having bond pads, each of which consists of a first bond pad made of a material whose ionization tendency is relatively low and a second bond pad made of a material whose ionization tendency is relatively high. The second bond pads function as sacrificial anodes to prevent the occurrence of galvanic corrosion at the interfaces between the first bond pads and conductive wires. In an embodiment, the upper surfaces of the second bond pads are marked instead of those of the first bond pads, which reduces the number of defects in the first bond pads. A method for fabricating the semiconductor device is also provided.
摘要翻译： 提供半导体器件。 半导体器件包括具有接合焊盘的半导体管芯，每个半导体管芯由电离倾向相对较低的材料制成的第一接合焊盘和由电离倾向相对较高的材料制成的第二接合焊盘构成。 第二接合焊盘用作牺牲阳极，以防止在第一接合焊盘和导电线之间的界面处发生电偶腐蚀。 在一个实施例中，标记第二接合焊盘的上表面而不是第一接合焊盘的上表面，这减少了第一接合焊盘中的缺陷数量。 还提供了一种用于制造半导体器件的方法。
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