公开(公告)号：US20240324179A1

公开(公告)日：2024-09-26

申请号：US18599234

申请日：2024-03-08

Applicant: Kioxia Corporation

Inventor： Yusuke MUTO ,  Masaya TODA ,  Yuta SAITO ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Kota TAKAHASHI ,  Kazuhiro MATSUO ,  Masaya NAKATA ,  Takuma DOI ,  Kenichiro TORATANI

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/05

Abstract: The semiconductor device includes a substrate, an oxide semiconductor layer spaced from the substrate in a first direction intersecting with a surface of the substrate, a first wiring opposed to a part of the oxide semiconductor layer, a gate insulating film disposed between the oxide semiconductor layer and the first wiring, a second wiring electrically connected to one end in the first direction of the oxide semiconductor layer, and a first insulating layer disposed on a surface on one side and a surface on the other side in a second direction intersecting with the first direction of the second wiring. The second wiring contains a first metallic element, and the first insulating layer contains the first metallic element and oxygen (O).

公开(公告)号：US20210170542A1

公开(公告)日：2021-06-10

申请号：US16806558

申请日：2020-03-02

Applicant: KIOXIA CORPORATION

Inventor： Mikiya SAKASHITA ,  Yukiteru MATSUI ,  Akifumi GAWASE

IPC: B24B37/20 ,  B24B37/04 ,  H01L21/67 ,  H01L21/306

Abstract: According to one embodiment, a polishing apparatus includes a holder for holding a polishing pad for polishing a surface of a substrate. A plurality of pressing members are configured to press a back surface side of the polishing pad while held by the holder. A driving unit is configured to selectively move pressing members in a direction towards the surface of the substrate so as to press the back surface side of the polishing pad.

公开(公告)号：US20230085635A1

公开(公告)日：2023-03-23

申请号：US17687944

申请日：2022-03-07

Applicant: Kioxia Corporation

Inventor： Hiroki KAWAI ,  Kasumi YASUDA ,  Hiroki TOKUHIRA ,  Kazuhiro KATONO ,  Akifumi GAWASE ,  Katsuyoshi KOMATSU ,  Tadaomi DAIBOU

IPC: H01L45/00 ,  G11C13/00

Abstract: A resistance change device of an embodiment includes a first electrode, a second electrode, and a layer disposed between the first electrode and the second electrode and containing a resistance change material. In the resistance change device of the embodiment, the resistance change material contains: a first element including Sb and Te; a second element including at least one element selected from the group consisting of Ge and In; a third element including at least one element selected from the group consisting of Si, N, B, C, Al, and Ti; and a fourth element including at least one element selected from the group consisting of Sc, Y, La, Gd, Zr, and Hf.

公开(公告)号：US20220262954A1

公开(公告)日：2022-08-18

申请号：US17734960

申请日：2022-05-02

Applicant: Kioxia Corporation

Inventor： Tomoki ISHIMARU ,  Shinji MORI ,  Kazuhiro MATSUO ,  Keiichi SAWA ,  Akifumi GAWASE

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/267 ,  H01L29/08 ,  H01L29/417 ,  H01L29/40

Abstract: A semiconductor device of an embodiment includes a first electrode, a second electrode, a first metallic region provided between the first electrode and the second electrode and includes at least one metallic element selected from the group consisting of indium (In), gallium (Ga), zinc (Zn), aluminum (Al), magnesium (Mg), manganese (Mn), titanium (Ti), tungsten (W), molybdenum (Mo), and tin (Sn), a second metallic region provided between the first metallic region and the second electrode and includes the at least one metallic element, a semiconductor region provided between the first metallic region and the second metallic region and includes the at least one metallic element and oxygen (O), an insulating region provided between the first metallic region and the second metallic region and is surrounded by the semiconductor region, a gate electrode surrounding the semiconductor region, and a gate insulating layer provided between the semiconductor region and the gate electrode.

公开(公告)号：US20250081436A1

公开(公告)日：2025-03-06

申请号：US18823386

申请日：2024-09-03

Applicant: Kioxia Corporation

Inventor： Kotaro NODA ,  Akio KANEKO ,  Masayuki MURASE ,  Akifumi GAWASE ,  Kazuhiro KATONO

IPC: H10B12/00

Abstract: According to one embodiment, a semiconductor device includes a first electrode with a first electrode portion and a second electrode portion on the first electrode portion. An oxide semiconductor layer is on the second electrode portion. A gate electrode layer surrounds part of an outer side wall of the oxide semiconductor layer. A gate insulating layer surrounds the outer side wall of the oxide semiconductor layer such that the gate insulating layer is between the oxide semiconductor layer and the gate electrode layer. A distance between the second electrode portion and the gate electrode layer is less than a distance between the first electrode portion and the gate electrode layer.

公开(公告)号：US20240324178A1

公开(公告)日：2024-09-26

申请号：US18593978

申请日：2024-03-04

Applicant: Kioxia Corporation

Inventor： Kasumi OKABE ,  Akifumi GAWASE ,  Kazuhiro KATONO ,  Kotaro NODA ,  Takanori AKITA ,  Takahiro FUJII

IPC: H10B12/00

CPC classification number: H10B12/33 ,  H10B12/50

Abstract: A semiconductor device includes a first electrode, an oxide semiconductor layer electrically connected to the first electrode and disposed above the first electrode, a gate electrode facing the oxide semiconductor layer with an insulating film interposed therebetween, and a second electrode including a first conductive layer electrically connected to the oxide semiconductor layer and disposed above the oxide semiconductor layer, the first conductive layer containing oxygen, indium, and tin. The second electrode further includes a second conductive layer in contact with the first conductive layer and containing oxygen and a first metal and a third conductive layer in contact with the second conductive layer and containing the first metal.

公开(公告)号：US20230307358A1

公开(公告)日：2023-09-28

申请号：US17942005

申请日：2022-09-09

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Yimin LIU

IPC: H01L23/528 ,  H01L21/768

CPC classification number: H01L23/528 ,  H01L21/76802 ,  H01L21/76877

Abstract: A semiconductor device includes first conductive layers, a width in a first direction thereof being a first width, a second conductive layer arranged with first conductive layers, a smaller one of a width in the first direction thereof and a width in a second direction thereof being a second width that is larger than the first width, a third conductive layer in contact with one end portion of at least one of first conductive layers, and a fourth conductive layer in contact with one end portion of the second conductive layer. The at least one of first conductive layers and the second conductive layer contain a first metal, a second metal, and oxygen (O). A concentration of the first metal of the at least one of first conductive layers is higher than a concentration of the first metal of the second conductive layer.

公开(公告)号：US20210082711A1

公开(公告)日：2021-03-18

申请号：US16820888

申请日：2020-03-17

Applicant: Kioxia Corporation

Inventor： Akifumi GAWASE ,  Yukiteru MATSUI ,  Mikiya SAKASHITA

IPC: H01L21/3105 ,  H01L21/033 ,  H01L21/311

Abstract: A method for manufacturing a semiconductor device according to an embodiment includes: forming a first layer on a semiconductor substrate, a surface of the first layer having a first plane of which distance from the semiconductor substrate is a first distance and a second plane of which distance from the semiconductor substrate is a second distance smaller than the first distance, and a difference between the first distance and the second distance being 30 nm or more; performing planarization processing on the first layer to have the difference of less than 30 nm; forming a second layer directly on the first layer after performing the planarization processing; supplying a resist to the second layer; bringing a template having a pattern into contact with the resist to form a resist layer to which the pattern has been transferred; and etching the second layer using the resist layer as a mask.

公开(公告)号：US20250107074A1

公开(公告)日：2025-03-27

申请号：US18829236

申请日：2024-09-09

Applicant: Kioxia Corporation

Inventor： Yusuke MUTO ,  Kazuhiro KATONO ,  Tomoki HARADA ,  Akifumi GAWASE

IPC: H10B12/00

Abstract: A semiconductor device includes a first electrode, a first oxide semiconductor in contact with the first electrode at one end of the first oxide semiconductor, the first oxide semiconductor extending in a first direction that intersects with a surface of the first electrode, a first insulator surrounding a side surface of the first oxide semiconductor, a first conductor surrounding at least a part of a side surface of the first insulator, a second conductor in contact with another end of the first oxide semiconductor, a third conductor on the second conductor, and a fourth conductor on the third conductor. The third conductor and the fourth conductor include a first metallic element, and the second conductor and the third conductor include oxygen.

公开(公告)号：US20240084456A1

公开(公告)日：2024-03-14

申请号：US18332117

申请日：2023-06-09

Applicant: Kioxia Corporation

Inventor： Kazuhiro KATONO ,  Kazuhiro MATSUO ,  Yusuke MIKI ,  Kenichiro TORATANI ,  Akifumi GAWASE

IPC: C23C16/52 ,  C23C16/40 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  H01L21/66

CPC classification number: C23C16/52 ,  C23C16/407 ,  C23C16/45565 ,  C23C16/4584 ,  H01L21/02565 ,  H01L21/0262 ,  H01L22/20 ,  H01L21/02381

Abstract: In one embodiment, a film forming apparatus includes a chamber configured to load a substrate, a stage configured to support the substrate, and a gas supplier configured to supply a gas into the chamber to form a film on the substrate. The device further includes a first detector configured to detect a first value that varies depending on at least pressure of a first portion above the stage in the chamber, and a controller configured to control a process of forming the film on the substrate based on the first value.