公开(公告)号：US07084052B2

公开(公告)日：2006-08-01

申请号：US10917394

申请日：2004-08-13

申请人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

发明人： Kiichi Hirano ,  Naoya Sotani ,  Toshifumi Yamaji ,  Yoshihiro Morimoto ,  Kiyoshi Yoneda

IPC分类号： H01L21/425

CPC分类号： H01L21/02667 ,  G02F1/13454 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/0262 ,  H01L21/02686 ,  H01L21/2022 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78621 ,  H01L29/78675

摘要： A method of fabricating a thin film transistor by setting the temperature of a heat treatment for crystallizing an active layer which is formed on a substrate at a level not deforming the substrate and activating an impurity layer in a heat treatment method different from that employed for the heat treatment, and a semiconductor device prepared by forming a heat absorption film, a semiconductor film, a gate insulating film, and a gate electrode on a substrate, the heat absorption film being provided within a region substantially corresponding to the semiconductor film.

公开(公告)号：US07081875B2

公开(公告)日：2006-07-25

申请号：US09953584

申请日：2001-09-17

申请人： Ryoichi Yokoyama ,  Kiyoshi Yoneda

发明人： Ryoichi Yokoyama ,  Kiyoshi Yoneda

IPC分类号： G09G3/36

CPC分类号： G09G3/3648 ,  G09G3/2011 ,  G09G3/32 ,  G09G3/3614 ,  G09G2300/0408 ,  G09G2300/0809 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2300/0857 ,  G09G2330/02 ,  G09G2330/021 ,  G09G2340/0428

摘要： In the display device having the retaining circuit for holding the digital image data at the pixel element, the power voltage supplied to the retaining circuit 110 is set up to be at the minimum level for the retaining circuit to hold the data during the data writing period, but the voltage supplied to the retaining circuit is raised by the voltage booster 95 upon the completion of the data writing. The retaining circuit 110 takes in the digital image signal fed from the drain signal line 61 in response to the signal fed from the gate signal line 51 and holds the digital image signal. Then, the display is carried out according to the signal held by the retaining circuit 110. By this, the erroneous writing of the data to the retaining circuit is prevented. The reduction of the electric power consumption and the high density integration of the pixel elements are also possible.

摘要翻译： 在具有用于将数字图像数据保持在像素元件处的保持电路的显示装置中，提供给保持电路110的电源电压被设置为在数据写入期间保持电路保持数据的最小电平 但是在完成数据写入时，提供给保持电路的电压被升压器95升高。 保持电路110响应于从栅极信号线51馈送的信号接收从漏极信号线61馈送的数字图像信号，并保持数字图像信号。 然后，根据由保持电路110保持的信号进行显示。 由此，防止了将数据写入保持电路的错误写入。 像素元件的电力消耗和高密度积分的减少也是可能的。

公开(公告)号：US06951495B2

公开(公告)日：2005-10-04

申请号：US10629058

申请日：2003-07-28

申请人： Kiyoshi Yoneda

发明人： Kiyoshi Yoneda

IPC分类号： H05B33/10 ,  G09F9/30 ,  H01L27/32 ,  H01L51/50 ,  H01L51/52 ,  H05B33/12 ,  H05B33/26 ,  H01J9/00

CPC分类号： H01L27/3248 ,  H01L27/3244 ,  H01L51/5209 ,  H01L2251/5315 ,  H01L2251/5353

摘要： A display apparatus includes display pixels each having a thin film transistor and an EL element formed successively forming over a substrate. The EL element has a cathode electrode connected to the source of the thin film transistor and an anode electrode, and is driven by the thin film transistor. The EL element externally emits light from the reverse side of the substrate. For example, when the cathode electrode is formed the comblike, meshlike, or gridlike pattern on the luminous layer, the light is emitted through the slits of the cathode pattern. The display apparatus is provided that can improve the aperture ratio of a display pixel and can increase the degree of freedom in deciding the size and the drive capability of a TFT element which drives an EL element.

摘要翻译： 显示装置包括各自具有薄膜晶体管和依次形成在基板上的EL元件的显示像素。 EL元件具有连接到薄膜晶体管的源极和阳极的阴极，并由薄膜晶体管驱动。 EL元件从衬底的背面向外发射光。 例如，当阴极电极在发光层上形成梳状，网状或网格状图案时，通过阴极图案的狭缝发射光。 提供了可以提高显示像素的开口率并且可以增加决定驱动EL元件的TFT元件的尺寸和驱动能力的自由度的显示装置。

公开(公告)号：US06630784B2

公开(公告)日：2003-10-07

申请号：US09258499

申请日：1999-02-26

申请人： Kiyoshi Yoneda

发明人： Kiyoshi Yoneda

IPC分类号： H01J6304

CPC分类号： H01L27/3248 ,  H01L27/3244 ,  H01L51/5209 ,  H01L2251/5315 ,  H01L2251/5353

摘要： A display apparatus includes display pixels each having a thin film transistor and an EL element formed successively forming over a substrate. The EL element has a cathode electrode connected to the source of the thin film transistor and an anode electrode, and is driven by the thin film transistor. The EL element externally emits light from the reverse side of the substrate. For example, when the cathode electrode is formed the comblike, meshlike, or gridlike pattern on the luminous layer, the light is emitted through the slits of the cathode pattern. The display apparatus is provided that can improve the aperture ratio of a display pixel and can increase the degree of freedom in deciding the size and the drive capability of a TFT element which drives an EL element.

摘要翻译： 显示装置包括各自具有薄膜晶体管和依次形成在基板上的EL元件的显示像素。 EL元件具有连接到薄膜晶体管的源极和阳极的阴极，并由薄膜晶体管驱动。 EL元件从衬底的背面向外发射光。 例如，当阴极电极在发光层上形成梳状，网状或网格状图案时，通过阴极图案的狭缝发射光。 提供了可以提高显示像素的开口率并且可以增加决定驱动EL元件的TFT元件的尺寸和驱动能力的自由度的显示装置。

公开(公告)号：US6137558A

公开(公告)日：2000-10-24

申请号：US193666

申请日：1998-11-17

申请人： Norio Koma ,  Tetsuji Omura ,  Kiyoshi Yoneda

发明人： Norio Koma ,  Tetsuji Omura ,  Kiyoshi Yoneda

IPC分类号： G02F1/1337 ,  C09K19/00 ,  C09K19/30 ,  G02F1/13 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1368 ,  G02F1/139 ,  G02F1/1343

CPC分类号： C09K19/3001 ,  G02F1/1393 ,  C09K2019/3027 ,  G02F1/133707 ,  G02F2001/133742

摘要： On a TFT substrate, a TFT using a low-temperature poly silicon thin film as an active layer is formed and a plurality of pixel electrodes are formed over the TFT and its electrode wiring, with an interlayer insulating layer between. In a common electrode formed on an opposite substrate opposite the TFT substrate with a liquid crystal layer between, an alignment controlling window for the liquid crystal is formed at a predetermined position opposite each of the pixel electrodes. A wide viewing angle is achieved by dividing an alignment area of liquid crystal molecules in one pixel area. The liquid crystal layer is vertically aligned and can be operated at a low driving voltage obtained by a poly silicon TFT by including fluorine liquid crystal molecules having negative dielectric anisotropy and fluorine side chains in the liquid crystal.

摘要翻译： 在TFT基板上，形成使用低温多晶硅薄膜作为有源层的TFT，并且在TFT及其电极布线之间形成有多个像素电极，其间具有层间绝缘层。 在与TFT基板相对的相对基板上形成有液晶层的公共电极之间，在与每个像素电极相对的预定位置处形成用于液晶的取向控制窗口。 通过在一个像素区域中划分液晶分子的取向区域来实现宽视角。 液晶层垂直取向，并且可以通过在液晶中包括具有负介电各向异性的氟液晶分子和氟侧链在多晶硅TFT获得的低驱动电压下操作。

公开(公告)号：US5895265A

公开(公告)日：1999-04-20

申请号：US821769

申请日：1997-03-20

申请人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

发明人： Yasunori Inoue ,  Kazutoshi Tsujimura ,  Shinichi Tanimoto ,  Yasuhiko Yamashita ,  Kiyoshi Yoneda ,  Yoshikazu Ibara

IPC分类号： H01L23/532 ,  H01L21/44

CPC分类号： H01L23/53223 ,  H01L2924/0002

摘要： A semiconductor device includes an insulating layer and an interconnection layer having a conductive layer provided over the insulating layer. The interconnection layer is patterned by photolithography. The device further includes a cap-metal layer, which is deposited on the conductive layer and suppresses reflection of light beams at the time of patterning the interconnection layer. The cap-metal layer has any one of the following structures: a double-layered structure having a titanium nitride layer and a titanium layer located between the titanium nitride layer and the conductive layer; a double-layered structure having a titanium nitride layer and an aluminum-titanium alloy layer located between the titanium nitride layer and the conductive layer; and a single-layered structure consisting essentially of an aluminum-titanium alloy. These design ensure accurate interconnection patterning in the photolithography, and provide improved EM and SM immunities of the interconnection.

摘要翻译： 半导体器件包括绝缘层和具有设置在绝缘层上的导电层的互连层。 通过光刻将互连层图案化。 该装置还包括帽形金属层，其沉积在导电层上并抑制在构图互连层时光束的反射。 帽金属层具有以下结构之一：具有氮化钛层和位于氮化钛层和导电层之间的钛层的双层结构; 具有氮化钛层和位于氮化钛层和导电层之间的铝 - 钛合金层的双层结构; 以及主要由铝 - 钛合金组成的单层结构。 这些设计确保在光刻中精确的互连图案化，并且提供互连的改善的EM和SM抗扰度。

公开(公告)号：US5721601A

公开(公告)日：1998-02-24

申请号：US532484

申请日：1995-09-22

申请人： Toshifumi Yamaji ,  Kou Masahara ,  Nobuhiko Oda ,  Koji Suzuki ,  Shiro Nakanishi ,  Hisashi Abe ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto

发明人： Toshifumi Yamaji ,  Kou Masahara ,  Nobuhiko Oda ,  Koji Suzuki ,  Shiro Nakanishi ,  Hisashi Abe ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto

IPC分类号： G02F1/1343 ,  G02F1/1333 ,  G02F1/136 ,  G02F1/1362 ,  G02F1/1368 ,  H01L21/336 ,  H01L29/786

CPC分类号： G02F1/136227 ,  G02F2001/133357

摘要： A liquid crystal display unit is described, which includes a first substrate, a second substrate opposing to the first substrate, pixel driving elements, first and second insulation layers, a planarizing film and a liquid crystal layer. The pixel driving elements are disposed on the first substrate and between the first and second substrates. The first insulation layer is deposited over the first substrate and the pixel driving elements. The planarizing film is formed on the first insulation layer. This planarizing film provides a substantially flat surface over the first substrate to minimize a height of a step present between an area corresponding to each pixel driving element and an area locating adjacent to the pixel driving element on the first substrate. The second insulation layer is formed on the planarizing film. The display electrodes are formed on the second insulation layer and electrically connected to the pixel driving elements, respectively. The liquid crystal layer is located between the first substrate and said second substrate.

摘要翻译： 描述了一种液晶显示单元，其包括第一基板，与第一基板相对的第二基板，像素驱动元件，第一和第二绝缘层，平坦化膜和液晶层。 像素驱动元件设置在第一基板上并且在第一和第二基板之间。 第一绝缘层沉积在第一衬底和像素驱动元件上。 平坦化膜形成在第一绝缘层上。 该平坦化膜在第一基板上提供基本上平坦的表面，以使在与每个像素驱动元件相对应的区域和与第一基板上的像素驱动元件相邻定位的区域之间存在的台阶的高度最小化。 第二绝缘层形成在平坦化膜上。 显示电极分别形成在第二绝缘层上并与像素驱动元件电连接。 液晶层位于第一基板和第二基板之间。

公开(公告)号：US5444653A

公开(公告)日：1995-08-22

申请号：US227509

申请日：1994-04-13

申请人： Hideharu Nagasawa ,  Kazunari Honma ,  Yasuhiro Takeda ,  Kiyoshi Yoneda

发明人： Hideharu Nagasawa ,  Kazunari Honma ,  Yasuhiro Takeda ,  Kiyoshi Yoneda

IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108 ,  H01L29/68

CPC分类号： H01L27/10852

摘要： Disclosed is a semiconductor memory device which has stack type memory cells each comprising one MIS transistor and one MIS capacitor. A first conductive film having a predetermined thickness is arranged to overlay a memory node contact of a memory cell which corresponds to a source or drain region of the MIS transistor. A second conductive film is formed on the surface of the first conductive film to have a predetermined thickness and come in contact with the source or drain region by means of a memory node contact hole formed inside the memory node contact. The first and second conductive films form a capacitor electrode of the MIS capacitor.

摘要翻译： 公开了一种半导体存储器件，其具有堆叠型存储单元，每个堆叠型存储单元包括一个MIS晶体管和一个MIS电容器。 布置具有预定厚度的第一导电膜以覆盖与MIS晶体管的源极或漏极区对应的存储单元的存储器节点接触。 在第一导电膜的表面上形成具有预定厚度的第二导电膜，并且通过形成在存储器节点接触件内部的存储节点接触孔与源区或漏区接触。 第一和第二导电膜形成MIS电容器的电容器电极。

公开(公告)号：US07439114B2

公开(公告)日：2008-10-21

申请号：US11207458

申请日：2005-08-18

申请人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

发明人： Hidenori Ogata ,  Ken Wakita ,  Kiyoshi Yoneda ,  Yoshihiro Morimoto ,  Tsutomu Yamada ,  Kazuhiro Imao ,  Takashi Kuwahara

IPC分类号： H01L21/00

CPC分类号： H01L21/02686 ,  H01L21/02532 ,  H01L21/02691 ,  H01L21/2026 ,  H01L21/268 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78675

摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.

摘要翻译： 为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平 激光束比区域前区域或中心区域低。 该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。 由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体 在退火过程的后半期间在最佳能级内退火的层。

公开(公告)号：US07199514B2

公开(公告)日：2007-04-03

申请号：US10444090

申请日：2003-05-23

申请人： Kiyoshi Yoneda

发明人： Kiyoshi Yoneda

IPC分类号： H01J1/62

CPC分类号： H01L27/3272 ,  H01L51/0059 ,  H01L51/0077 ,  H01L51/5284 ,  H05B33/22

摘要： An organic EL element with an emissive layer and a second electrode layer is formed on a device glass substrate in an organic EL display device. The second electrode layer covers the emissive layer. An anti-reflection layer for preventing the reflection of light by the second electrode layer is formed on the device glass substrate except the region where the emissive layer is formed. Since this layer prevents the reflection of light by the second electrode layer, only the light from the emissive layer radiates outwards through the device glass substrate, improving the contrast of the organic EL display device.

摘要翻译： 在有机EL显示装置中的器件玻璃基板上形成具有发光层和第二电极层的有机EL元件。 第二电极层覆盖发光层。 在除了形成发光层的区域之外，在器件玻璃基板上形成防止第二电极层反射光的防反射层。 由于该层防止第二电极层反射光，所以只有来自发光层的光通过装置玻璃基板向外辐射，改善了有机EL显示装置的对比度。