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    Charged particle beam device, position specification method used for charged particle beam device, and program
    1.
    发明授权
    Charged particle beam device, position specification method used for charged particle beam device, and program 有权
    带电粒子束装置，用于带电粒子束装置的位置指定方法和程序

    公开(公告)号：US08912487B2

    公开(公告)日：2014-12-16

    申请号：US13503074

    申请日：2010-10-06

    申请人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

    发明人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

    IPC分类号： H01J37/304 ,  H01J37/305 ,  G01N23/22 ,  H01J37/302

    CPC分类号： H01J37/3056 ,  G01N23/2208 ,  H01J37/302 ,  H01J37/3045 ,  H01J2237/3174 ,  H01J2237/31749

    摘要： Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

    摘要翻译： 使用FIB图像进行观察，而不会对指定区域造成任何损害。 为此，通过使用由离子束以外的带电粒子束获取的图像或作为外部数据准备的图像作为包含样本的指定区域的周边图像，在样本中设定离子束扫描禁止区域 。 此后，将用于设定离子束扫描禁止区域的图像精确地叠加在除了离子束扫描禁止区域之外的区域获取的FIB图像上，从而形成包括离子束扫描禁止区域的图像，其中离子束扫描禁止区域 尚未执行

    Charged Particle Beam Device, Position Specification Method Used for Charged Particle Beam Device, and Program
    2.
    发明申请
    Charged Particle Beam Device, Position Specification Method Used for Charged Particle Beam Device, and Program 有权
    带电粒子束装置，用于带电粒子束装置的位置规范方法和程序

    公开(公告)号：US20120211652A1

    公开(公告)日：2012-08-23

    申请号：US13503074

    申请日：2010-10-06

    申请人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

    发明人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

    IPC分类号： H01J37/26

    CPC分类号： H01J37/3056 ,  G01N23/2208 ,  H01J37/302 ,  H01J37/3045 ,  H01J2237/3174 ,  H01J2237/31749

    摘要： Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

    摘要翻译： 使用FIB图像进行观察，而不会对指定区域造成任何损害。 为此，通过使用由离子束以外的带电粒子束获取的图像或作为外部数据准备的图像作为包含样本的指定区域的周边图像，在样本中设定离子束扫描禁止区域 。 此后，将用于设定离子束扫描禁止区域的图像精确地叠加在除了离子束扫描禁止区域之外的区域获取的FIB图像上，从而形成包括离子束扫描禁止区域的图像，其中离子束扫描禁止区域 尚未执行

    Apparatus for detecting defect in device and method of detecting defect
    5.
    发明授权
    Apparatus for detecting defect in device and method of detecting defect 有权
    用于检查装置缺陷的装置和检查缺陷的方法

    公开(公告)号：US06734687B1

    公开(公告)日：2004-05-11

    申请号：US09936941

    申请日：2001-12-04

    申请人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

    发明人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

    IPC分类号： G01R31302

    CPC分类号： G01R31/311 ,  G01R31/2851 ,  G01R31/303

    摘要： Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).

    摘要翻译： 可以检查大尺寸芯片（20〜25mm的正方形）内的TEG内的亚微米尺寸（每个为1〜2.5mm的正方形）的接线图案中的断路缺陷，短路缺陷等。 所有的TEG，具有良好的可操作性，高可靠性和高效率。 用于通过机械接触对布线图案施加电压的导体探针由与样品台（16）的移动同步的同步型导体探针和相对固定于FIB发生器的固定型导体探针装置（21）组成， 10）。 探针尖端的位置叠加到SIM图像上并显示在显示单元上（19）。

    CHARGED PARTICLE BEAM DEVICE AND SAMPLE PRODUCTION METHOD
    9.
    发明申请
    CHARGED PARTICLE BEAM DEVICE AND SAMPLE PRODUCTION METHOD 有权
    充电颗粒光束装置和样品生产方法

    公开(公告)号：US20140076717A1

    公开(公告)日：2014-03-20

    申请号：US14119807

    申请日：2012-05-16

    申请人： Terutaka Nanri ,  Satoshi Tomimatsu

    发明人： Terutaka Nanri ,  Satoshi Tomimatsu

    IPC分类号： H01J37/304 ,  H01J37/305

    CPC分类号： H01J37/3056 ,  H01J37/244 ,  H01J37/30 ,  H01J37/304 ,  H01J2237/31713 ,  H01J2237/31745

    摘要： Provided is a technique to perform FIB milling, in spite of its sample dependency, effectively into a desired shape without influences of individual differences among operators. A charged particle beam device includes an ion beam optical system device configured to irradiate a sample with an ion beam generated at an ion source; a controller thereof; an element detector configured to detect elements constituting the sample; a controller thereof; and a central processor configured to automatically set conditions for the sample based on the element specified by the element detector.

    摘要翻译： 提供了一种执行FIB铣削的技术，尽管其样品依赖性有效地成为期望的形状，而不影响操作者之间的个体差异。 带电粒子束装置包括：离子束光学系统装置，被配置为用在离子源处产生的离子束照射样品; 其控制器; 元件检测器，被配置为检测构成样品的元件; 其控制器; 以及中央处理器，其被配置为基于由所述元件检测器指定的元素来自动设置所述样本的条件。

    ION BEAM DEVICE AND MACHINING METHOD
    10.
    发明申请
    ION BEAM DEVICE AND MACHINING METHOD 有权
    离子束装置和加工方法

    公开(公告)号：US20130334034A1

    公开(公告)日：2013-12-19

    申请号：US14002137

    申请日：2012-01-13

    申请人： Shinya Kitayama ,  Satoshi Tomimatsu ,  Tsuyoshi Onishi

    发明人： Shinya Kitayama ,  Satoshi Tomimatsu ,  Tsuyoshi Onishi

    IPC分类号： H01J37/317

    CPC分类号： H01J37/317 ,  H01J37/20 ,  H01J37/222 ,  H01J2237/30466 ,  H01J2237/31745 ,  H01J2237/31749

    摘要： Provided are a device and method capable of machining a machining target such as a sample, a probe, or a sample table without requiring a high degree of device operation skill. First, a shape generation process of determining a shape of a machining target on the basis of an ion beam scanning signal and an absorption current of the machining target is performed. Next, a machining pattern positioning process of positioning a machining pattern over an image of the machining target is performed. Further, an ion beam stopping process of stopping ion beam irradiation is performed from a result of comparison between the image of the machining target and the machining pattern while the machining target is machined through the ion beam irradiation.

    摘要翻译： 提供了能够加工诸如样品，探针或样品台之类的加工对象的装置和方法，而不需要高度的装置操作技能。 首先，执行基于加工对象的离子束扫描信号和吸收电流来确定加工对象的形状的形状生成处理。 接下来，执行将加工图案定位在加工对象的图像上的加工图案定位处理。 此外，从加工对象的图像与加工图案的比较的结果，通过离子束照射加工加工对象，进行停止离子束照射的离子束停止处理。