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    Apparatus for detecting defect in device and method of detecting defect
    2.
    发明授权
    Apparatus for detecting defect in device and method of detecting defect 有权
    用于检查装置缺陷的装置和检查缺陷的方法

    公开(公告)号：US06734687B1

    公开(公告)日：2004-05-11

    申请号：US09936941

    申请日：2001-12-04

    申请人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

    发明人： Tohru Ishitani ,  Hidemi Koike ,  Aritoshi Sugimoto ,  Isamu Sekihara ,  Kaoru Umemura ,  Satoshi Tomimatsu ,  Junzo Azuma

    IPC分类号： G01R31302

    CPC分类号： G01R31/311 ,  G01R31/2851 ,  G01R31/303

    摘要： Disconnection defects, short-circuit defects and the like in wiring patters of submicron sizes within TEGs (a square of 1 to 2.5 mm for each) numerously arranged in a large chip (a square of 20 to 25 mm) can be inspected with respect to all the TEGs, with good operability, high reliability and high efficiency. A conductor probe for applying voltage to the wiring patterns by mechanical contact is composed of synchronous type conductor probe that synchronizes with movement of a sample stage (16), and fixed type conductor probe means (21) that is relatively fixed to an FIB generator (10). Positions of probe tips are superimposed to an SIM image and displayed on a display unit (19).

    摘要翻译： 可以检查大尺寸芯片（20〜25mm的正方形）内的TEG内的亚微米尺寸（每个为1〜2.5mm的正方形）的接线图案中的断路缺陷，短路缺陷等。 所有的TEG，具有良好的可操作性，高可靠性和高效率。 用于通过机械接触对布线图案施加电压的导体探针由与样品台（16）的移动同步的同步型导体探针和相对固定于FIB发生器的固定型导体探针装置（21）组成， 10）。 探针尖端的位置叠加到SIM图像上并显示在显示单元上（19）。

    Charged particle beam device, position specification method used for charged particle beam device, and program
    4.
    发明授权
    Charged particle beam device, position specification method used for charged particle beam device, and program 有权
    带电粒子束装置，用于带电粒子束装置的位置指定方法和程序

    公开(公告)号：US08912487B2

    公开(公告)日：2014-12-16

    申请号：US13503074

    申请日：2010-10-06

    申请人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

    发明人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

    IPC分类号： H01J37/304 ,  H01J37/305 ,  G01N23/22 ,  H01J37/302

    CPC分类号： H01J37/3056 ,  G01N23/2208 ,  H01J37/302 ,  H01J37/3045 ,  H01J2237/3174 ,  H01J2237/31749

    摘要： Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

    摘要翻译： 使用FIB图像进行观察，而不会对指定区域造成任何损害。 为此，通过使用由离子束以外的带电粒子束获取的图像或作为外部数据准备的图像作为包含样本的指定区域的周边图像，在样本中设定离子束扫描禁止区域 。 此后，将用于设定离子束扫描禁止区域的图像精确地叠加在除了离子束扫描禁止区域之外的区域获取的FIB图像上，从而形成包括离子束扫描禁止区域的图像，其中离子束扫描禁止区域 尚未执行

    Charged Particle Beam Device, Position Specification Method Used for Charged Particle Beam Device, and Program
    5.
    发明申请
    Charged Particle Beam Device, Position Specification Method Used for Charged Particle Beam Device, and Program 有权
    带电粒子束装置，用于带电粒子束装置的位置规范方法和程序

    公开(公告)号：US20120211652A1

    公开(公告)日：2012-08-23

    申请号：US13503074

    申请日：2010-10-06

    申请人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

    发明人： Kunio Sakamoto ,  Megumi Aizawa ,  Satoshi Tomimatsu ,  Isamu Sekihara

    IPC分类号： H01J37/26

    CPC分类号： H01J37/3056 ,  G01N23/2208 ,  H01J37/302 ,  H01J37/3045 ,  H01J2237/3174 ,  H01J2237/31749

    摘要： Observation using an FIB image is enabled without causing any damage to a designated region. To this end, an ion beam scanning-prohibited region is set in a sample by using an image acquired by a charged particle beam other than an ion beam, or an image prepared as external data as a peripheral image including the designated region of a sample. Thereafter, the image used to set the ion beam scanning-prohibited region is exactly superimposed on an FIB image acquired for regions except the ion beam scanning-prohibited region, thereby forming an image including the ion beam scanning-prohibited region on which ion beam scanning has not been performed.

    摘要翻译： 使用FIB图像进行观察，而不会对指定区域造成任何损害。 为此，通过使用由离子束以外的带电粒子束获取的图像或作为外部数据准备的图像作为包含样本的指定区域的周边图像，在样本中设定离子束扫描禁止区域 。 此后，将用于设定离子束扫描禁止区域的图像精确地叠加在除了离子束扫描禁止区域之外的区域获取的FIB图像上，从而形成包括离子束扫描禁止区域的图像，其中离子束扫描禁止区域 尚未执行

    Focused Ion Beam Device and Focused Ion Beam Processing Method
    9.
    发明申请
    Focused Ion Beam Device and Focused Ion Beam Processing Method 失效
    聚焦离子束装置和聚焦离子束加工方法

    公开(公告)号：US20120235055A1

    公开(公告)日：2012-09-20

    申请号：US13513256

    申请日：2010-11-15

    申请人： Yuichi Madokoro ,  Hirokazu Kaneoya ,  Tsuyoshi Onishi ,  Isamu Sekihara

    发明人： Yuichi Madokoro ,  Hirokazu Kaneoya ,  Tsuyoshi Onishi ,  Isamu Sekihara

    IPC分类号： H01J3/28

    CPC分类号： G21K1/00 ,  H01J37/1478 ,  H01J37/3056 ,  H01J2237/0458 ,  H01J2237/31745

    摘要： Disclosed is an operation for an optical system which achieves observation of focused ion beam processing equivalent to that in a case wherein a sample stage is tilted mechanically. In a focused ion beam optical system, an aperture, a tilting deflector, a beam scanner, and an objective lens are controlled so as to irradiate an ion beam tilted to the optical axis of the optical system, thereby achieving thin film processing and a cross section processing without accompanying adjustment and operation for a sample stage. The thin film processing and the cross section processing with a focused ion beam can be automated, and yield can be improved. For example, by applying the present invention to a cross section monitor to detect an end point, the cross section processing can be easily automated.

    摘要翻译： 公开了一种光学系统的操作，其实现了与样品台机械倾斜的情况相当的聚焦离子束处理的观察。 在聚焦离子束光学系统中，控制孔径，倾斜偏转器，光束扫描器和物镜，以照射倾斜到光学系统的光轴的离子束，由此实现薄膜处理和交叉 部分处理，而不需要对样品台进行调整和操作。 利用聚焦离子束的薄膜处理和横截面加工可以自动化，并且可以提高收率。 例如，通过将本发明应用于截面监视器来检测终点，可以容易地自动化横截面处理。

    Sample inspection apparatus
    10.
    发明授权
    Sample inspection apparatus 有权
    样品检验仪

    公开(公告)号：US07989766B2

    公开(公告)日：2011-08-02

    申请号：US12416914

    申请日：2009-04-01

    申请人： Yasuhiko Nara ,  Tohru Ando ,  Masahiro Sasajima ,  Tsutomu Saito ,  Tomoharu Obuki ,  Isamu Sekihara

    发明人： Yasuhiko Nara ,  Tohru Ando ,  Masahiro Sasajima ,  Tsutomu Saito ,  Tomoharu Obuki ,  Isamu Sekihara

    IPC分类号： H01J37/28

    CPC分类号： H01J37/28 ,  H01J2237/24495 ,  H01J2237/24564 ,  H01J2237/24592 ,  H01J2237/2803

    摘要： A sample inspection apparatus in which a fault in a semiconductor sample can be measured and analyzed efficiently. A plurality of probes are brought into contact with the sample. The sample is irradiated with an electron beam while a current flowing through the probes is measured. Signals from at least two probes are supplied to an image processing unit so as to form an absorbed electron current image. A difference between images obtained in accordance with a temperature change of the sample is obtained. A faulty point is identified from the difference between the images.

    摘要翻译： 可以有效地测量和分析半导体样品中的故障的样本检查装置。 使多个探针与样品接触。 用电子束照射样品，同时测量流过探针的电流。 来自至少两个探针的信号被提供给图像处理单元，以形成吸收的电子流图像。 获得根据样品的温度变化获得的图像之间的差异。 根据图像之间的差异来识别错误点。