公开(公告)号：US20160108523A1

公开(公告)日：2016-04-21

申请号：US14884575

申请日：2015-10-15

Applicant: Lam Research Corporation

Inventor： Andrew C. Lee ,  Michael C. Kellogg ,  Christopher J. Pena ,  John E. Daugherty

IPC: C23C16/455 ,  B24B37/04 ,  C23C16/04

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.

Abstract translation: 提供一种用于安装用于半导体处理装置的气体输送系统的气体供应部件的气体输送基板。 衬底可以包括多个层，其主表面结合在一起，形成具有用于在第一，第二，第三和第四气体供应部件的外表面上接收和安装的开口的层压板。 衬底可以包括延伸穿过内部主表面的第一气体通道，其至少部分地与延伸穿过不同内部主表面的第二气体通道重叠。 衬底可以包括第一气体管道，其包括将第一气体供应部件连接到第二气体供应部件的第一气体通道，以及包括将第三气体供应部件连接到第四气体供应部件的第二通道的第二气体管道。 还公开了用于制造气体输送基板的各种技术。

公开(公告)号：US20220013388A1

公开(公告)日：2022-01-13

申请号：US17299291

申请日：2018-12-03

Applicant: Lam Research Corporation

Inventor： John E. Daugherty ,  Changyou Jing ,  Sushil Anand

IPC: H01L21/67 ,  H01L21/687

Abstract: Various embodiments include apparatuses to provides an in-situ, non-intrusive verification of substrate pin-lifters while a substrate is in a substrate-processing location on a process tool. The disclosed subject matter can also verify any unexpected substrate movement prior to or while the substrate is being removed from the process tool. In an exemplary embodiment, a pin-lifter test substrate includes a number of motion sensors and at least one force sensor. The motion sensors including at least one type of sensor selected from sensor types including inclinometers and accelerometers. A memory device on the pin-lifter test substrate records data received from the motion sensors. Instead of or in addition to the memory device, a wireless communications device transmits data received from the motion sensors to a remote receiver. Other apparatuses and systems are disclosed.

公开(公告)号：US20160111257A1

公开(公告)日：2016-04-21

申请号：US14517192

申请日：2014-10-17

Applicant: Lam Research Corporation

Inventor： Michael C. Kellogg ,  Christopher J. Pena ,  John E. Daugherty

IPC: H01J37/32 ,  B32B37/18 ,  B32B38/00 ,  B32B9/00 ,  F17D3/01 ,  B32B17/00 ,  H01L21/3065 ,  H01L21/67 ,  F17D1/02 ,  F17D3/16 ,  B32B3/10 ,  B32B15/04

CPC classification number: H01J37/3244 ,  B32B3/10 ,  B32B3/266 ,  B32B7/12 ,  B32B9/005 ,  B32B9/04 ,  B32B15/04 ,  B32B17/00 ,  B32B27/06 ,  B32B38/04 ,  B32B2307/714 ,  B32B2315/02 ,  B32B2315/08 ,  F17D1/02 ,  F17D3/01 ,  F17D3/16 ,  H01J37/32449

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus. The substrate includes a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate includes a first gas channel extending into an interior major surface that at least partially overlaps a second gas channel extending into a different interior major surface. The substrate includes a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the forth gas supply component.

Abstract translation: 一种用于安装用于半导体处理装置的气体输送系统的气体供应部件的气体输送基板。 衬底包括多个层，其主表面结合在一起形成具有用于在第一，第二，第三和第四气体供应部件的外表面上接收和安装的开口的层压体。 衬底包括延伸到内部主表面的第一气体通道，其至少部分地与延伸到不同内部主表面的第二气体通道重叠。 衬底包括第一气体管道，其包括将第一气体供应部件连接到第二气体供应部件的第一气体通道和包括将第三气体供应部件连接到第四气体供应部件的第二通道的第二气体导管。

公开(公告)号：US09314854B2

公开(公告)日：2016-04-19

申请号：US13754068

申请日：2013-01-30

Applicant: Lam Research Corporation

Inventor： Lihua Li Huang ,  Duane D. Scott ,  Joseph P. Doench ,  Jamie Burns ,  Emily P. Stenta ,  Gregory R. Bettencourt ,  John E. Daugherty

IPC: H01B13/00 ,  B23B35/00 ,  B28D1/14 ,  B28D5/02 ,  H01J37/32

CPC classification number: B23B35/00 ,  B28D1/14 ,  B28D5/021 ,  H01J37/3255 ,  Y10T29/4973 ,  Y10T29/49826 ,  Y10T408/03 ,  Y10T408/04

Abstract: A method of drilling holes comprises ductile mode drilling the holes in a component of a plasma processing apparatus with a cutting tool wherein the component is made of a nonmetallic hard and brittle material. The method comprises drilling each hole in the component by controlling a depth of cut while drilling such that a portion of the brittle material undergoes high pressure phase transformation and forms amorphous portions of the brittle material during chip formation. The amorphous portions of the brittle material are removed from each hole such that a wall of each hole formed in the component has an as drilled surface roughness (Ra) of about 0.2 to 0.8 μm.

Abstract translation: 钻孔的方法包括使用切削工具在等离子体处理装置的部件中钻孔的延性模式，其中所述部件由非金属硬和脆性材料制成。 该方法包括通过在钻孔时控制切割深度来钻出部件中的每个孔，使得脆性材料的一部分经历高压相变，并在切屑形成期间形成脆性材料的非晶部分。 从每个孔中去除脆性材料的非晶部分，使得在部件中形成的每个孔的壁具有约0.2至0.8μm的钻孔表面粗糙度（Ra）。

公开(公告)号：US11662237B2

公开(公告)日：2023-05-30

申请号：US17043182

申请日：2019-04-02

Applicant: LAM RESEARCH CORPORATION

Inventor： Iqbal A. Shareef ,  Dennis Smith ,  John E. Daugherty

IPC: G01F1/84 ,  G01F15/00 ,  G01F1/48

CPC classification number: G01F1/8445 ,  G01F1/48 ,  G01F1/845 ,  G01F1/8427 ,  G01F1/8431 ,  G01F15/005

Abstract: A fluid delivery system includes N first valves. Inlets of the N first valves are fluidly connected to N gas sources, respectively, where N is an integer greater than zero. N mass flow controllers include a microelectromechanical (MEMS) Coriolis flow sensor having an inlet in fluid communication with an outlet of a corresponding one of the N first valves. A second valve has an inlet in fluid communication with an outlet of the MEMS Coriolis flow sensor and an outlet supplying fluid to treat a substrate arranged in a processing chamber. A controller in communication with the MEMS Coriolis flow sensor is configured to determine at least one of a mass flow rate and a density of fluid flowing through the MEMS Coriolis flow sensor.

公开(公告)号：US11087961B2

公开(公告)日：2021-08-10

申请号：US15910739

申请日：2018-03-02

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Robin Koshy ,  John E. Daugherty ,  Satish Srinivasan ,  David Wetzel

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

公开(公告)号：US20210343510A1

公开(公告)日：2021-11-04

申请号：US17305883

申请日：2021-07-16

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Robin Koshy ,  John E. Daugherty ,  Satish Srinivasan ,  David Wetzel

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

公开(公告)号：US20190272981A1

公开(公告)日：2019-09-05

申请号：US15910739

申请日：2018-03-02

Applicant: Lam Research Corporation

Inventor： Lin Xu ,  Robin Koshy ,  John E. Daugherty ,  Satish Srinivasan ,  David Wetzel

IPC: H01J37/32 ,  C23C16/40 ,  C23C16/56 ,  C23C16/455

Abstract: A quartz structure includes a protective layer comprising yttrium oxide. The quartz structure may be fabricated by: (a) receiving a quartz structure; and (b) coating the quartz structure with a protective layer comprising yttrium oxide to form a part to be used in the plasma reactor. The part has a size and shape adapted for forming a window or injector in a plasma reactor. The protective layer does not substantially change the size or shape of the quartz structure. The part may be installed in the plasma reactor at a location where, during operation, a plasma will contact or be proximate to the part.

公开(公告)号：US20210005485A1

公开(公告)日：2021-01-07

申请号：US17025349

申请日：2020-09-18

Applicant: LAM RESEARCH CORPORATION

Inventor： John E. Daugherty ,  David Trussell ,  Michael Kellogg ,  Christopher Pena ,  Richard H. Gould ,  Klay Kunkel

IPC: H01L21/67

Abstract: A substrate processing tool includes a wafer transport assembly that includes a first wafer transport module and extends along a longitudinal axis of the substrate processing tool. A plurality of process modules includes a first process module and a second process module arranged on opposite sides of the longitudinal axis of the substrate processing tool. Outer sides of the first wafer transport module are coupled to the first and second process modules, respectively. A service tunnel defined below the wafer transport assembly extends along the longitudinal axis from a front end of the substrate processing tool to a rear end of the substrate processing tool below the wafer transport assembly.

公开(公告)号：US10557197B2

公开(公告)日：2020-02-11

申请号：US14884575

申请日：2015-10-15

Applicant: Lam Research Corporation

Inventor： Andrew C. Lee ,  Michael C. Kellogg ,  Christopher J. Pena ,  John E. Daugherty

IPC: C23C16/455 ,  B24B37/04 ,  C23C16/04

Abstract: A gas delivery substrate for mounting gas supply components of a gas delivery system for a semiconductor processing apparatus is provided. The substrate may include a plurality of layers having major surfaces thereof bonded together forming a laminate with openings for receiving and mounting first, second, third and fourth gas supply components on an outer major surface. The substrate may include a first gas channel extending across an interior major surface that at least partially overlaps a second gas channel extending across a different interior major surface. The substrate may include a first gas conduit including the first gas channel connecting the first gas supply component to the second gas supply component, and a second gas conduit including the second channel connecting the third gas supply component to the fourth gas supply component. Also disclosed are various techniques for manufacturing gas delivery substrates.