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公开(公告)号：US10020188B2
公开(公告)日：2018-07-10
申请号：US15817579
申请日：2017-11-20
Applicant: LAM RESEARCH CORPORATION
Inventor： James S. Sims , Jon Henri , Ramesh Chandrasekharan , Andrew John McKerrow , Seshasayee Varadarajan , Kathryn Merced Kelchner
CPC classification number: H01L21/0228 , C23C16/0227 , C23C16/0272 , C23C16/345 , C23C16/402 , C23C16/4404 , C23C16/4405 , C23C16/45525 , C23C16/4554 , C23C16/50 , H01J37/32082 , H01J37/32467 , H01J37/32513 , H01J37/32532 , H01J37/3255 , H01J37/32715 , H01J37/32862 , H01J2237/3321 , H01J2237/335 , H01L21/0217 , H01L21/02211 , H01L21/02274
Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.
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公开(公告)号：US11832533B2
公开(公告)日：2023-11-28
申请号：US17645178
申请日：2021-12-20
Applicant: Lam Research Corporation
Inventor： James Samuel Sims , Andrew John McKerrow , Meihua Shen , Thorsten Lill , Shane Tang , Kathryn Merced Kelchner , John Hoang , Alexander Dulkin , Danna Qian , Vikrant Rai
IPC: H10N70/00 , H01L21/67 , H01L21/02 , C23C16/34 , C23C16/509 , C23C16/455 , H10N50/01 , H10N70/20 , H10N50/00
CPC classification number: H10N70/011 , C23C16/34 , C23C16/4554 , C23C16/509 , H01L21/022 , H01L21/0217 , H01L21/0228 , H01L21/0234 , H01L21/02211 , H01L21/02216 , H01L21/02274 , H01L21/67167 , H10N50/00 , H10N70/231 , H10N70/826 , H10N70/882
Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
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公开(公告)号：US20200066987A1
公开(公告)日：2020-02-27
申请号：US16112503
申请日：2018-08-24
Applicant: Lam Research Corporation
Inventor： James Samuel Sims , Andrew John McKerrow , Meihua Shen , Thorsten Lill , Shane Tang , Kathryn Merced Kelchner , John Hoang , Alexander Dulkin , Danna Qian , Vikrant Rai
Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
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Patent Agency Ranking
公开(公告)号：US20220115592A1
公开(公告)日：2022-04-14
申请号：US17645178
申请日：2021-12-20
Applicant: Lam Research Corporation
Inventor： James Samuel Sims , Andrew John McKerrow , Meihua Shen , Thorsten Lill , Shane Tang , Kathryn Merced Kelchner , John Hoang , Alexander Dulkin , Danna Qian , Vikrant Rai
IPC: H01L45/00 , H01L21/67 , H01L21/02 , H01L43/12 , C23C16/34 , C23C16/509 , C23C16/455
Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
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公开(公告)号：US09865455B1
公开(公告)日：2018-01-09
申请号：US15258789
申请日：2016-09-07
Applicant: Lam Research Corporation
Inventor： James Samuel Sims , Kathryn Merced Kelchner
IPC: H01L21/469 , H01L21/02 , C23C16/34 , C23C16/50 , C23C16/46 , C23C16/455
CPC classification number: H01L21/02274 , C23C16/345 , C23C16/45527 , C23C16/45542 , C23C16/46 , C23C16/50 , C23C16/505 , H01L21/0217 , H01L21/0228
Abstract: Provided are methods and apparatuses for depositing a nitride film using one or more plasma-enhanced atomic layer deposition cycles and one or more thermal atomic layer deposition cycles in a single reactor. The number of thermal atomic layer deposition cycles can be equal to or greater than the number of plasma-enhanced atomic layer deposition cycles. Incorporation of thermal atomic layer deposition cycles with plasma-enhanced atomic layer deposition cycles can allow for greater fine-tuning of properties of the nitride film. In some implementations, the nitride film is a silicon nitride film. The silicon nitride film can be fine-tuned to allow for a more silicon-rich film with a greater refractive index. In some implementations, the plasma-enhanced atomic layer deposition cycles and the thermal atomic layer deposition cycles can be maintained at the same wafer temperature.
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公开(公告)号：US11239420B2
公开(公告)日：2022-02-01
申请号：US16112503
申请日：2018-08-24
Applicant: Lam Research Corporation
Inventor： James Samuel Sims , Andrew John McKerrow , Meihua Shen , Thorsten Lill , Shane Tang , Kathryn Merced Kelchner , John Hoang , Alexander Dulkin , Danna Qian , Vikrant Rai
IPC: H01L21/02 , H01L45/00 , H01L21/67 , H01L43/12 , C23C16/34 , C23C16/509 , C23C16/455
Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
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公开(公告)号：US20180102245A1
公开(公告)日：2018-04-12
申请号：US15817579
申请日：2017-11-20
Applicant: LAM RESEARCH CORPORATION
Inventor： James S. Sims , Jon Henri , Ramesh Chandrasekharan , Andrew John McKerrow , Seshasayee Varadarajan , Kathryn Merced Kelchner
CPC classification number: H01L21/0228 , C23C16/0227 , C23C16/0272 , C23C16/345 , C23C16/402 , C23C16/4404 , C23C16/4405 , C23C16/45525 , C23C16/4554 , C23C16/50 , H01J37/32082 , H01J37/32467 , H01J37/32513 , H01J37/32532 , H01J37/3255 , H01J37/32715 , H01J37/32862 , H01J2237/3321 , H01J2237/335 , H01L21/0217 , H01L21/02211 , H01L21/02274
Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.
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8.发明授权公开(公告)号：US09824884B1
公开(公告)日：2017-11-21
申请号：US15287176
申请日：2016-10-06
Applicant: LAM RESEARCH CORPORATION
Inventor： James S. Sims , Jon Henri , Ramesh Chandrasekharan , Andrew John McKerrow , Seshasayee Varadarajan , Kathryn Merced Kelchner
CPC classification number: H01L21/0228 , C23C16/0227 , C23C16/0272 , C23C16/345 , C23C16/402 , C23C16/4404 , C23C16/4405 , C23C16/45525 , C23C16/4554 , C23C16/50 , H01J37/32082 , H01J37/32467 , H01J37/32513 , H01J37/32532 , H01J37/3255 , H01J37/32715 , H01J37/32862 , H01J2237/3321 , H01J2237/335 , H01L21/0217 , H01L21/02211 , H01L21/02274
Abstract: A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.
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