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公开(公告)号：US10020188B2
公开(公告)日：2018-07-10
申请号：US15817579
申请日：2017-11-20
Applicant: LAM RESEARCH CORPORATION
Inventor： James S. Sims , Jon Henri , Ramesh Chandrasekharan , Andrew John McKerrow , Seshasayee Varadarajan , Kathryn Merced Kelchner
CPC classification number: H01L21/0228 , C23C16/0227 , C23C16/0272 , C23C16/345 , C23C16/402 , C23C16/4404 , C23C16/4405 , C23C16/45525 , C23C16/4554 , C23C16/50 , H01J37/32082 , H01J37/32467 , H01J37/32513 , H01J37/32532 , H01J37/3255 , H01J37/32715 , H01J37/32862 , H01J2237/3321 , H01J2237/335 , H01L21/0217 , H01L21/02211 , H01L21/02274
Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.
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2.发明授权公开(公告)号：US10454029B2
公开(公告)日：2019-10-22
申请号：US15349753
申请日：2016-11-11
Applicant: Lam Research Corporation
Inventor： Andrew John McKerrow , Dennis M. Hausmann
IPC: H01L21/02 , C23C16/04 , H01L21/31 , H01L21/768 , H01L45/00 , C23C16/34 , C23C16/56 , C23C16/455
Abstract: Methods and apparatuses for forming conformal, low wet etch rate silicon nitride films having low hydrogen content using atomic layer deposition are described herein. Methods involve depositing a silicon nitride film at a first temperature using a bromine-containing and/or iodine-containing silicon precursor and nitrogen by atomic layer deposition and treating the silicon nitride film using a plasma at a temperature less than about 100° C. Methods and apparatuses are suitable for forming conformal, dense, low wet etch rate silicon nitride films as encapsulation layers over chalcogenide materials for memory applications.
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公开(公告)号：US10347547B2
公开(公告)日：2019-07-09
申请号：US15232708
申请日：2016-08-09
Applicant: Lam Research Corporation
Inventor： Seshasayee Varadarajan , Aaron R. Fellis , Andrew John McKerrow , James Samuel Sims , Ramesh Chandrasekharan , Jon Henri
IPC: H01L21/66 , H01L21/02 , C23C16/455 , C23C16/50 , C23C16/52 , C23C16/458 , C23C16/46 , C23C16/505 , C23C16/54 , H01L21/67 , H01L21/677
Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).
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公开(公告)号：US20220115592A1
公开(公告)日：2022-04-14
申请号：US17645178
申请日：2021-12-20
Applicant: Lam Research Corporation
Inventor： James Samuel Sims , Andrew John McKerrow , Meihua Shen , Thorsten Lill , Shane Tang , Kathryn Merced Kelchner , John Hoang , Alexander Dulkin , Danna Qian , Vikrant Rai
IPC: H01L45/00 , H01L21/67 , H01L21/02 , H01L43/12 , C23C16/34 , C23C16/509 , C23C16/455
Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
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5.发明申请公开(公告)号：US20200066607A1
公开(公告)日：2020-02-27
申请号：US16503270
申请日：2019-07-03
Applicant: Lam Research Corporation
Inventor： Seshasayee Varadarajan , Aaron R. Fellis , Andrew John McKerrow , James Samuel Sims , Ramesh Chandrasekharan , Jon Henri
IPC: H01L21/66 , C23C16/455 , C23C16/458 , C23C16/46 , C23C16/505 , C23C16/54 , H01L21/67 , H01L21/677 , H01L21/02 , C23C16/50 , C23C16/52
Abstract: Disclosed are methods of and apparatuses and systems for depositing a film in a multi-station deposition apparatus. The methods may include: (a) providing a substrate to a first station of the apparatus, (b) adjusting the temperature of the substrate to a first temperature, (c) depositing a first portion of the material on the substrate while the substrate is at the first temperature in the first station, (d) transferring the substrate to the second station, (e) adjusting the temperature of the substrate to a second temperature, and (f) depositing a second portion of the material on the substrate while the substrate is at the second temperature, such that the first portion and the second portion exhibit different values of a property of the material. The apparatuses and systems may include a multi-station deposition apparatus and a controller having control logic for performing one or more of (a)-(f).
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Patent Agency Ranking
公开(公告)号：US20160258057A1
公开(公告)日：2016-09-08
申请号：US14641179
申请日：2015-03-06
Applicant: Lam Research Corporation
Inventor： James Lee , George Andrew Antonelli , Kevin M. McLaughlin , Andrew John McKerrow , Curtis Bailey , Alexander R. Fox , Stephen Lau , Eugene Smargiassi , Casey Holder , Troy Daniel Ribaudo , Xiaolan Chen
CPC classification number: C23C16/488 , B08B7/0057 , B08B9/00 , C23C16/4405 , C23C16/4408 , H01L21/67115 , H01L21/6719 , H01L21/68764 , H01L21/68771
Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.
Abstract translation: 提供了用于清洁半导体处理室的设备和方法。 半导体处理室可以包括UV辐射源，衬底保持器和UV透射窗。 UV透射窗可以包括一个或多个窗格。 UV透射窗的一个或多个窗可以与含氟化学物质不反应。 在多窗格窗口中，可以在窗口之间的间隙中形成净化气体流动路径。 净化气体可以流过净化气体流动路径，以防止室内使用的工艺气体到达UV透射窗的一个或多个窗格。
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公开(公告)号：US11239420B2
公开(公告)日：2022-02-01
申请号：US16112503
申请日：2018-08-24
Applicant: Lam Research Corporation
Inventor： James Samuel Sims , Andrew John McKerrow , Meihua Shen , Thorsten Lill , Shane Tang , Kathryn Merced Kelchner , John Hoang , Alexander Dulkin , Danna Qian , Vikrant Rai
IPC: H01L21/02 , H01L45/00 , H01L21/67 , H01L43/12 , C23C16/34 , C23C16/509 , C23C16/455
Abstract: Methods and apparatuses for forming an encapsulation bilayer over a chalcogenide material on a semiconductor substrate are provided. Methods involve forming a bilayer including a barrier layer directly on chalcogenide material deposited using pulsed plasma plasma-enhanced chemical vapor deposition (PP-PECVD) and an encapsulation layer over the barrier layer deposited using plasma-enhanced atomic layer deposition (PEALD). In various embodiments, the barrier layer is formed using a halogen-free silicon precursor and the encapsulation layer deposited by PEALD is formed using a halogen-containing silicon precursor and a hydrogen-free nitrogen-containing reactant.
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公开(公告)号：US10240236B2
公开(公告)日：2019-03-26
申请号：US14641179
申请日：2015-03-06
Applicant: Lam Research Corporation
Inventor： James Lee , George Andrew Antonelli , Kevin M. McLaughlin , Andrew John McKerrow , Curtis Bailey , Alexander R. Fox , Stephen Lau , Eugene Smargiassi , Casey Holder , Troy Daniel Ribaudo , Xiaolan Chen
Abstract: Apparatuses and methods for cleaning a semiconductor processing chamber is provided. The semiconductor processing chamber may include a UV radiation source, a substrate holder, and a UV transmissive window. The UV transmissive window may include one or multiple panes. One or more panes of the UV transmissive window may be non-reactive with fluorine containing chemistries. In multi-pane windows a purge gas flow path may be formed in the gap between windows. A purge gas may be flowed through the purge gas flow path to prevent process gases used in the chamber interior from reaching one or more panes of the UV transmissive window.
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公开(公告)号：US20180102245A1
公开(公告)日：2018-04-12
申请号：US15817579
申请日：2017-11-20
Applicant: LAM RESEARCH CORPORATION
Inventor： James S. Sims , Jon Henri , Ramesh Chandrasekharan , Andrew John McKerrow , Seshasayee Varadarajan , Kathryn Merced Kelchner
CPC classification number: H01L21/0228 , C23C16/0227 , C23C16/0272 , C23C16/345 , C23C16/402 , C23C16/4404 , C23C16/4405 , C23C16/45525 , C23C16/4554 , C23C16/50 , H01J37/32082 , H01J37/32467 , H01J37/32513 , H01J37/32532 , H01J37/3255 , H01J37/32715 , H01J37/32862 , H01J2237/3321 , H01J2237/335 , H01L21/0217 , H01L21/02211 , H01L21/02274
Abstract: A method of depositing ALD films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma such that aluminum-rich byproducts are formed on the ceramic surfaces, (b) depositing a conformal halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces so as to cover the aluminum-rich byproducts, (c) depositing a pre-coating on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film on the semiconductor substrate supported on the ceramic surface of the pedestal.
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10.发明授权公开(公告)号：US09824884B1
公开(公告)日：2017-11-21
申请号：US15287176
申请日：2016-10-06
Applicant: LAM RESEARCH CORPORATION
Inventor： James S. Sims , Jon Henri , Ramesh Chandrasekharan , Andrew John McKerrow , Seshasayee Varadarajan , Kathryn Merced Kelchner
CPC classification number: H01L21/0228 , C23C16/0227 , C23C16/0272 , C23C16/345 , C23C16/402 , C23C16/4404 , C23C16/4405 , C23C16/45525 , C23C16/4554 , C23C16/50 , H01J37/32082 , H01J37/32467 , H01J37/32513 , H01J37/32532 , H01J37/3255 , H01J37/32715 , H01J37/32862 , H01J2237/3321 , H01J2237/335 , H01L21/0217 , H01L21/02211 , H01L21/02274
Abstract: A method of depositing silicon nitride films on semiconductor substrates processed in a micro-volume of a plasma enhanced atomic layer deposition (PEALD) reaction chamber wherein a single semiconductor substrate is supported on a ceramic surface of a pedestal and process gas is introduced through gas outlets in a ceramic surface of a showerhead into a reaction zone above the semiconductor substrate, includes (a) cleaning the ceramic surfaces of the pedestal and showerhead with a fluorine plasma, (b) depositing a halide-free atomic layer deposition (ALD) oxide undercoating on the ceramic surfaces, (c) depositing a precoating of ALD silicon nitride on the halide-free ALD oxide undercoating, and (d) processing a batch of semiconductor substrates by transferring each semiconductor substrate into the reaction chamber and depositing a film of ALD silicon nitride on the semiconductor substrate supported on the ceramic surface of the pedestal.
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