Abstract:
The present invention relates to a transparent heating device using graphene. To accomplish the aforementioned purpose, the present invention provides a graphene heating device comprising: a transparent substrate; an adhesive layer formed on the transparent substrate; and a graphene layer formed on the adhesive layer, where the graphene layer is heated by a current flowing along the graphene layer. According to one embodiment of the present invention, fogging or icing occurs on the surface of an object that can be removed without deteriorating the light transmittance of the object, which requires the light transmittance.
Abstract:
Disclosed is graphene. More particularly, disclosed are a method for manufacturing graphene to grow graphene with high quality and graphene manufactured by the same. The method includes preparing a thermal-expansion compensation substrate, forming a metal layer on the thermal-expansion compensation substrate, and forming graphene on the metal layer.
Abstract:
The present invention relates to graphene and, particularly, to a method for doping graphene using substrate surface modification, a method for manufacturing a graphene composite electrode using graphene and inorganic matter, and a graphene structure comprising the same. The method for doping graphene according to an embodiment of the present invention may comprise the steps of: forming, on a substrate, a precursor polymer layer for doping; and positioning graphene on the substrate on which the precursor polymer layer is formed. In addition, the method for manufacturing a graphene composite electrode according to an embodiment of the present invention may comprise the steps of: forming graphene on catalyst metal; forming a transparent conductive oxide on the graphene; crystallizing the transparent conductive oxide by applying heat of 150° C. or higher; and transferring, to a final substrate, a composite electrode consisting of the graphene and the transparent conductive oxide.
Abstract:
The present invention relates to the manufacture of a hetero-element thin film and, particularly, to a method for manufacturing a doped metal chalcogenide thin film and the same thin film. The method for manufacturing a metal chalcogenide thin film of the present invention may comprise the steps of: supplying a first metal precursor that is gasified; supplying a second metal precursor that is gasified; supplying a chalcogen-containing gas; and reacting the first metal precursor, the second metal precursor, and the chalcogen-containing gas on a growing substrate at a first temperature condition to form a thin film.
Abstract:
An apparatus for manufacturing high quality graphene, a method for manufacturing the same and graphene manufactured by the method are disclosed. The apparatus for manufacturing graphene includes a first chamber for supplying a carbon source under a first condition, a second chamber for supplying a carbon source under a second condition, a connector for connecting the first chamber to the second chamber, and a feeder for continuously supplying a catalyst metal to the first chamber and the second chamber.
Abstract:
A graphene doped with different dopants and a method for preparing the same are disclosed. A method for preparing a multi-doped graphene includes: mixing a metal-based dopant and at least one organic-based dopant to prepare a doping solution; stacking a graphene layer on a substrate; and doping the graphene layer with the doping solution that includes the metal-based dopant and the at least one organic-based dopant. The method allows maintaining the transparency of the prepared graphene and minimizing the sheet resistance of the graphene while not damaging a substrate on which the graphene is stacked.
Abstract:
The present invention provides a method for manufacturing graphene, said graphene, and an apparatus for manufacturing same. The method for manufacturing graphene comprises the steps of: loading a catalytic metal layer into a chamber; applying tensile force to the catalytic metal layer; and forming graphene on the catalytic metal layer by supplying a carbon source into the chamber while the tension is applied to the catalytic metal layer. Therefore, the size of the grains on the catalytic metal layer can be increased by applying tension to the catalytic metal layer, and high quality uniform graphene can be grown through the use of the catalytic metal layer.
Abstract:
Disclosed is a light emitting device. More specifically, disclosed are an organic electroluminescent device display and a method for manufacturing the same. The organic electroluminescent device display includes a substrate, an organic electroluminescent device disposed on the substrate, a sealing cap for sealing the organic electroluminescent device, and a getter disposed inside the sealing cap, the getter comprising a graphene layer.
Abstract:
A method for manufacturing graphene using light capable of transferring and patterning graphene, and graphene manufactured using the method are disclosed. The method includes forming a graphene layer on a catalyst metal layer, attaching a support layer losing adhesion by light on the graphene layer, removing the catalyst metal layer, disposing a substrate on the graphene layer, and separating the support layer from the graphene layer by irradiating light to the support layer.