公开(公告)号：US06919013B2

公开(公告)日：2005-07-19

申请号：US10357422

申请日：2003-02-03

Applicant: LinLin Chen

Inventor： LinLin Chen

IPC: H01L21/288 ,  H01L21/768 ,  H05K3/42 ,  C25D5/10 ,  C25D3/38 ,  C25D5/02 ,  C25D5/48 ,  C25D7/12

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: A process for applying a metallization interconnect structure to a semiconductor workpiece having a barrier layer deposited on a surface thereof is set forth. The process includes the forming of an ultra-thin metal seed layer on the barrier layer. The ultra-thin seed layer having a thickness of less than or equal to about 500 Angstroms. The ultra-thin seed layer is then enhanced by depositing additional metal thereon to provide an enhanced seed layer. The enhanced seed layer has a thickness at all points on sidewalls of substantially all recessed features distributed within the workpiece that is equal to or greater than about 10% of the nominal seed layer thickness over an exteriorly disposed surface of the workpiece.

Abstract translation: 阐述了将金属化互连结构应用于具有沉积在其表面上的阻挡层的半导体工件的方法。 该方法包括在阻挡层上形成超薄金属种子层。 超薄种子层具有小于或等于约500埃的厚度。 然后通过在其上沉积附加金属以提供增强的种子层来增强超薄籽晶层。 增强的种子层在分布在工件内的基本上所有凹陷特征的侧壁上的所有点处具有等于或大于在工件的外部设置表面上的标称种子层厚度的约10％的厚度。

公开(公告)号：US07048841B2

公开(公告)日：2006-05-23

申请号：US10354649

申请日：2003-01-28

Applicant: Robert W. Batz, Jr. ,  John M. Pedersen ,  John L. Klocke ,  LinLin Chen

Inventor： Robert W. Batz, Jr. ,  John M. Pedersen ,  John L. Klocke ,  LinLin Chen

IPC: C23C28/00 ,  C25D17/00

CPC classification number: C25D17/06 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  H01L21/288 ,  H01L21/2885 ,  Y10T29/49002

Abstract: Contact assemblies, electroplating machines with contact assemblies, and methods for making contact assemblies that are used in the fabrication of microelectronic workpieces. The contact assemblies can be wet-contact assemblies or dry-contact assemblies. A contact assembly for use in an electroplating system can comprise a support member and a contact system coupled to the support member. The support member, for example, can be a ring or another structure that has an inner wall defining an opening configured to allow the workpiece to move through the support member along an access path. In one embodiment, the support member is a conductive ring having a plurality of posts depending from the ring that are spaced apart from one another by gaps. The contact system can be coupled to the posts of the support member. The contact system can have a plurality of contact members projecting inwardly into the opening relative to the support member and transversely with respect to the access path. The contact members can comprise electrically conductive biasing elements, such as fingers, that have a contact site and a dielectric coating covering at least a portion of the biasing elements. The contact members can also have a raised feature configured to engage the seed-layer on the workpiece for conducting the current to the seed-layer.

公开(公告)号：US06632345B1

公开(公告)日：2003-10-14

申请号：US09694413

申请日：2000-10-23

Applicant: LinLin Chen

Inventor： LinLin Chen

IPC: C25D510

CPC classification number: H01L21/76843 ,  H01L21/2885 ,  H01L21/76868 ,  H01L21/76873 ,  H01L2221/1089 ,  H05K3/423

Abstract: In accordance with one embodiment of the invention, a process for applying a metal to a workpiece is set forth. The workpiece initially includes a seed layer deposited on at least a portion of a surface thereof that is generally unsuitable for bulk electrochemical deposition. The process starts with this workpiece and repairs the seed layer by depositing a metal using a first electrochemical deposition process to provide a repaired seed layer that is suitable for subsequent bulk electrochemical deposition. After the seed layer has been repaired, a bulk metal deposition over the repaired seed layer is executed by electrochemically depositing a bulk amount of a metal onto the repaired seed layer using a second electrochemical deposition process. The processing parameters of the second electrochemical deposition process are different from processing parameters used in the first electrochemical deposition process. A corresponding apparatus is also set forth.

Abstract translation: 根据本发明的一个实施例，阐述了将金属施加到工件上的工艺。 工件最初包括沉积在其表面的至少一部分上的种子层，其通常不适于本体电化学沉积。 该工艺从该工件开始并且通过使用第一电化学沉积工艺沉积金属来修复种子层，以提供适于随后的大量电化学沉积的修复的种子层。 种子层已被修复之后，通过使用第二电化学沉积工艺通过电化学沉积大量金属到修复的种子层上来进行修复的种子层上的块状金属沉积。 第二电化学沉积工艺的加工参数不同于在第一电化学沉积工艺中使用的加工参数。 还提出了相应的装置。

公开(公告)号：US06508920B1

公开(公告)日：2003-01-21

申请号：US09387577

申请日：1999-08-31

Applicant: Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

Inventor： Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

IPC: C25D1700

CPC classification number: H01L21/67173 ,  C25D5/022 ,  C25D5/50 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/76838 ,  H01L21/76877 ,  H01L21/76883

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract translation: 阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。 根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。 沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。 还提出了用于执行独特退火工艺的各种新型装置。

公开(公告)号：US06277263B1

公开(公告)日：2001-08-21

申请号：US09387099

申请日：1999-08-31

Applicant: LinLin Chen

Inventor： LinLin Chen

IPC: C25D510

CPC classification number: C25D7/123 ,  C23C28/322 ,  C23C28/34 ,  C25D3/38 ,  C25D5/10 ,  H01L21/2885 ,  H01L21/76843 ,  H01L21/76868 ,  H01L21/76873 ,  H01L21/76877 ,  H01L2221/1089 ,  H05K3/423

Abstract: This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.

Abstract translation: 本发明采用了对诸如半导体工件的工件的铜金属化的新颖方法。 根据本发明，使用碱性电解铜浴将铜电镀到种子层上，将铜直接电镀到阻挡层材料上，或者使用沉积物增强已经沉积在阻挡层上的超薄铜籽晶层 工艺如PVD。 所得到的铜层提供了一种优异的保形铜涂层，其填充工件中的沟槽，通孔和其它微结构。 当用于种子层增强时，所得到的铜种子层提供了优异的共形铜涂层，其允许使用电化学沉积技术使微结构填充具有良好均匀性的铜层。 此外，以所公开的方式电镀的铜层表现出低的薄层电阻，并且在低温下容易退火。

公开(公告)号：US07001471B2

公开(公告)日：2006-02-21

申请号：US09386734

申请日：1999-08-31

Applicant: Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

Inventor： Thomas L. Ritzdorf ,  E. Henry Stevens ,  LinLin Chen ,  Lyndon W. Graham ,  Curt Dundas

IPC: C22F1/08 ,  C25D5/50

CPC classification number: H01L21/67173 ,  C25D5/022 ,  C25D5/50 ,  C25D7/123 ,  C25D17/001 ,  H01L21/2885 ,  H01L21/6723 ,  H01L21/76838 ,  H01L21/76877 ,  H01L21/76883

Abstract: A method for filling recessed microstructures at a surface of a microelectronic workpiece, such as a semiconductor wafer, with metallization is set forth. In accordance with the method, a metal layer is deposited into the microstructures with a process, such as an electroplating process, that generates metal grains that are sufficiently small so as to substantially fill the recessed microstructures. The deposited metal is subsequently subjected to an annealing process at a temperature below about 100 degrees Celsius, and may even take place at ambient room temperature to allow grain growth which provides optimal electrical properties. Various novel apparatus for executing unique annealing processes are also set forth.

Abstract translation: 阐述了在金属化的微电子工件（例如半导体晶片）的表面处填充凹陷微结构的方法。 根据该方法，金属层通过诸如电镀工艺的工艺沉积到微结构中，该工艺产生足够小的金属颗粒，以便基本上填充凹陷的微结构。 沉积的金属随后在低于约100摄氏度的温度下进行退火处理，并且甚至可以在环境室温下进行，以允许提供最佳电性能的晶粒生长。 还提出了用于执行独特退火工艺的各种新型装置。

公开(公告)号：US20050189213A1

公开(公告)日：2005-09-01

申请号：US11085908

申请日：2005-03-21

Applicant: Daniel Woodruff ,  Kyle Hanson ,  Thomas Oberlitner ,  LinLin Chen ,  John Pedersen ,  Vladimir Zila

Inventor： Daniel Woodruff ,  Kyle Hanson ,  Thomas Oberlitner ,  LinLin Chen ,  John Pedersen ,  Vladimir Zila

IPC: C23C18/16 ,  A61K35/12 ,  C23C28/00 ,  C25D5/08 ,  C25D7/12 ,  C25D17/06 ,  H01L21/288 ,  C25D17/04

CPC classification number: H01L21/2885 ,  A61K35/12 ,  C12N2500/25 ,  C12N2500/32 ,  C12N2500/34 ,  C12N2500/40 ,  C12N2501/11 ,  C12N2501/39 ,  C12N2501/395 ,  C12N2506/22 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06

Abstract: A reactor for plating a metal onto a surface of a workpiece is set forth. The reactor comprises a reactor bowl including an electroplating solution disposed therein and an anode disposed in the reactor bowl in contact with the electroplating solution. A contact assembly is spaced from the anode within the reactor bowl. The contact assembly includes a plurality of contacts disposed to contact a peripheral edge of the surface of the workpiece to provide electroplating power to the surface of the workpiece. The contacts execute a wiping action against the surface of the workpiece as the workpiece is brought into engagement therewith The contact assembly also including a barrier disposed interior of the plurality of contacts. The barrier includes a member disposed to engage the surface of the workpiece to assist in isolating the plurality of contacts from the electroplating solution. In one embodiment, the plurality of contacts are in the form of discrete flexures while in another embodiment the plurality of contacts are in the form of a Belleville ring contact. A flow path may be provided in the contact assembly for providing a purging gas to the plurality of contacts and the peripheral edge of the workpiece. The purging gas may be used to assist in the formation of the barrier of the contact assembly. A combined electroplating/electroless plating tool and method are also set forth.

Abstract translation: 阐述了将金属镀在工件表面上的反应器。 反应器包括反应器碗，其包括设置在其中的电镀溶液和设置在与电镀溶液接触的反应器碗中的阳极。 接触组件与反应器碗内的阳极间隔开。 接触组件包括多个触点，其设置成接触工件表面的周边边缘以向工件的表面提供电镀功率。 当工件与其接合时，触头在工件的表面上执行擦拭动作。触头组件还包括设置在多个触点内部的屏障。 阻挡层包括设置成接合工件的表面以帮助将多个触点与电镀溶液隔离的构件。 在一个实施例中，多个触点是离散弯曲的形式，而在另一个实施例中，多个触点是贝尔维尔环接触的形式。 可以在接触组件中设置流路，以向多个触点和工件的周边边缘提供净化气体。 吹扫气体可用于帮助形成接触组件的屏障。 还提出了组合电镀/无电镀工具和方法。

公开(公告)号：US06899805B2

公开(公告)日：2005-05-31

申请号：US09931268

申请日：2001-08-16

Applicant: LinLin Chen ,  Lyndon W. Graham

Inventor： LinLin Chen ,  Lyndon W. Graham

IPC: G01N27/416 ,  G01N27/48 ,  G01N27/49 ,  G01N27/42

CPC classification number: G01N27/4161 ,  G01N27/48

Abstract: A method for determining the concentration of an additive X of an electrochemical bath that includes at least one further component Y is set forth. In accordance with the method, a predetermined amount of a starting solution is provided. The starting solution comprises virgin makeup solution that is saturated with the further additive, or forms a mixed solution that is saturated with the further additive when combined with an amount of the electrochemical bath for measurement that is extracted for measurement. A predetermined amount of the extracted electrochemical bath is then added to the predetermined amount of the starting solution to form the mixed solution. At least one electroanalytical measurement cycle it is then executed using the mixed solution and the results of the measurement cycle are compared with a known measurement standard.

Abstract translation: 阐述了确定电化学浴的添加剂X的浓度的方法，该方法包括至少一种其它组分Y。 根据该方法，提供预定量的起始溶液。 起始溶液包括用另外的添加剂饱和的初始补充溶液，或者当与用于测量提取的用于测量的电化学浴的量组合时，形成饱和了另外的添加剂的混合溶液。 然后将预定量的提取的电化学浴加入到预定量的起始溶液中以形成混合溶液。 然后使用混合溶液执行至少一个电分析测量循环，并将测量循环的结果与已知的测量标准进行比较。

公开(公告)号：US06645356B1

公开(公告)日：2003-11-11

申请号：US09386558

申请日：1999-08-31

Applicant: Daniel J. Woodruff ,  Kyle M. Hanson ,  Thomas H. Oberlitner ,  LinLin Chen ,  John M. Pedersen ,  Vladimir Zila

Inventor： Daniel J. Woodruff ,  Kyle M. Hanson ,  Thomas H. Oberlitner ,  LinLin Chen ,  John M. Pedersen ,  Vladimir Zila

IPC: C25D1700

CPC classification number: C25D17/001 ,  C25D7/123

Abstract: A reactor for plating a metal onto a surface of a workpiece is set forth. The reactor comprises a reactor bowl including an electroplating solution disposed therein and an anode disposed in the reactor bowl in contact with the electroplating solution. A contact assembly is spaced from the anode within the reactor bowl. The contact assembly includes a plurality of contacts disposed to contact a peripheral edge of the surface of the workpiece to provide electroplating power to the surface of the workpiece. The contacts execute a wiping action against the surface of the workpiece as the workpiece is brought into engagement therewith The contact assembly also including a barrier disposed interior of the plurality of contacts. The barrier includes a member disposed to engage the surface of the workpiece to assist in isolating the plurality of contacts from the electroplating solution. In one embodiment, the plurality of contacts are in the form of discrete flexures while in another embodiment the plurality of contacts are in the form of a Belleville ring contact. A flow path may be provided in the contact assembly for providing a purging gas to the plurality of contacts and the peripheral edge of the workpiece. The purging gas may be used to assist in the formation of the barrier of the contact assembly. A combined electroplating/electroless plating tool and method are also set forth.

公开(公告)号：US06527925B1

公开(公告)日：2003-03-04

申请号：US09717927

申请日：2000-11-20

Applicant: Robert W. Batz, Jr. ,  John M. Pedersen ,  John L. Klocke ,  LinLin Chen

Inventor： Robert W. Batz, Jr. ,  John M. Pedersen ,  John L. Klocke ,  LinLin Chen

IPC: C25D1716

CPC classification number: H01L21/2885 ,  A61K35/12 ,  C12N2500/25 ,  C12N2500/32 ,  C12N2500/34 ,  C12N2500/40 ,  C12N2501/11 ,  C12N2501/39 ,  C12N2501/395 ,  C12N2506/22 ,  C25D5/08 ,  C25D7/123 ,  C25D17/001 ,  C25D17/06

Abstract: Contact assemblies, electroplating machines with contact assemblies, and methods for making contact assemblies that are used in the fabrication of microelectronic workpieces. The contact assemblies can be wet-contact assemblies or dry-contact assemblies. A contact assembly for use in an electroplating system can comprise a support member and a contact system coupled to the support member. The support member, for example, can be a ring or another structure that has an inner wall defining an opening configured to allow the workpiece to move through the support member along an access path. In one embodiment, the support member is a conductive ring having a plurality of posts depending from the ring that are spaced apart from one another by gaps. The contact system can be coupled to the posts of the support member. The contact system can have a plurality of contact members projecting inwardly into the opening relative to the support member and transversely with respect to the access path. The contact members can comprise electrically conductive biasing elements, such as fingers, that have a contact site and a dielectric coating covering at least a portion of the biasing elements. The contact members can also have a raised feature configured to engage the seed-layer on the workpiece for conducting the current to the seed-layer.