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公开(公告)号:US20060110851A1
公开(公告)日:2006-05-25
申请号:US10994494
申请日:2004-11-20
申请人: Lloyd Burrell , Howard Chen , Louis Hsu , Wolfgang Sauter
发明人: Lloyd Burrell , Howard Chen , Louis Hsu , Wolfgang Sauter
CPC分类号: H01L23/5389 , H01L21/52 , H01L23/147 , H01L23/5385 , H01L2221/68322 , H01L2221/68345 , H01L2924/0002 , H01L2924/1433 , H01L2924/00
摘要: Economical methods for forming a co-planar multi-chip wafer-level packages are proposed. Partial wafer bonding and partial wafer dicing techniques are used to create chips as well as pockets. The finished chips are then mounted in the corresponding pockets of a carrier substrate, and global interconnects among the chips are formed on the top planar surface of the finished chips. The proposed methods facilitate the integration of chips fabricated with different process steps and materials. There is no need to use a planarization process such as chemical-mechanical polish to planarize the top surfaces of the chips. Since the chips are precisely aligned to each other and all the chips are mounted facing up, the module is ready for global wiring, which eliminates the need to flip the chips from an upside-down position.
摘要翻译: 提出了用于形成共面多芯片晶片级封装的经济方法。 部分晶片接合和部分晶片切割技术用于制造芯片以及口袋。 然后将完成的芯片安装在载体基板的相应凹穴中,并且芯片之间的全局互连形成在成品芯片的顶部平坦表面上。 所提出的方法促进了用不同工艺步骤和材料制造的芯片的集成。 不需要使用诸如化学机械抛光剂的平面化处理来平坦化芯片的顶表面。 由于芯片精确地对准并且所有芯片都朝上安装,所以模块准备好进行全局布线,从而不需要将芯片从倒置的位置翻转。
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公开(公告)号:US20060189007A1
公开(公告)日:2006-08-24
申请号:US10906507
申请日:2005-02-23
申请人: Toyohiro Aoki , Lloyd Burrell , Wolfgang Sauter
发明人: Toyohiro Aoki , Lloyd Burrell , Wolfgang Sauter
IPC分类号: H01L21/66
CPC分类号: H01L24/05 , H01L22/34 , H01L24/02 , H01L2224/04042 , H01L2224/05093 , H01L2224/05553 , H01L2924/01013 , H01L2924/01014 , H01L2924/01019 , H01L2924/01029 , H01L2924/01033 , H01L2924/01079 , H01L2924/01327 , H01L2924/14 , H01L2924/00
摘要: A sensor for measuring cracks in a semiconductor device, such as a wafer and, more particularly, to a BEOL wirebond crack sensor for low-k dies or wafers, and a method of providing the wirebond crack sensor for low-k wafers or the like structures.
摘要翻译: 用于测量诸如晶片的半导体器件中的裂纹的传感器,更具体地,涉及用于低k晶片或晶片的BEOL引线接合裂纹传感器,以及为低k晶片等提供引线接合裂纹传感器的方法 结构。
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公开(公告)号:US20050067708A1
公开(公告)日:2005-03-31
申请号:US10605369
申请日:2003-09-25
申请人: Lloyd Burrell , Kwong Wong , Adreanne Kelly , Samuel McKnight
发明人: Lloyd Burrell , Kwong Wong , Adreanne Kelly , Samuel McKnight
IPC分类号: H01L23/485 , H01L23/532 , H01L23/48
CPC分类号: H01L24/05 , H01L23/53223 , H01L24/45 , H01L2224/04042 , H01L2224/05073 , H01L2224/05083 , H01L2224/05166 , H01L2224/05181 , H01L2224/05187 , H01L2224/05624 , H01L2224/45124 , H01L2224/45144 , H01L2224/48624 , H01L2224/48724 , H01L2224/48824 , H01L2924/00011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01079 , H01L2924/01327 , H01L2924/04941 , H01L2924/04953 , H01L2924/0496 , H01L2924/14 , H01L2924/00014 , H01L2924/00
摘要: A semiconductor device, and a method of fabricating the device, having a copper wiring level and an aluminum bond pad above the copper wiring level. In addition to a barrier layer which is normally present to protect the copper wiring level, there is a composite layer between the aluminum bond pad and the barrier layer to make the aluminum bond pad more robust so as to withstand the forces of bonding and probing. The composite layer is a sandwich of a refractory metal and a refractory metal nitride.
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公开(公告)号:US20080073790A1
公开(公告)日:2008-03-27
申请号:US11866741
申请日:2007-10-03
IPC分类号: H01L23/48
CPC分类号: H01L24/05 , H01L23/3192 , H01L23/53223 , H01L24/03 , H01L2224/04042 , H01L2224/0501 , H01L2224/05022 , H01L2224/05082 , H01L2224/05124 , H01L2224/05155 , H01L2224/05644 , H01L2224/45124 , H01L2224/48744 , H01L2924/00014 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2224/48
摘要: A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a protective coating covering exposed surfaces of a wire bond pad. The TiN/Ti or TiN/Al cap is not affected by alkaline chemistries used in forming the Ni/Au metallization, yet it provides a sufficient electrical pathway connecting the bond pads to the Ni/Au pad metallization.
摘要翻译: 提供了一种通过能够防止在Ni / Au焊盘冶金的无电沉积期间可能的化学侵蚀的材料来密封引线接合焊盘的暴露表面的方法。 具体地说,本发明提供了一种TiN / Ti或TiN / Al帽作为覆盖引线接合焊盘露出表面的保护涂层的方法。 TiN / Ti或TiN / Al帽不受用于形成Ni / Au金属化的碱性化学物质的影响,但它提供了将接合焊盘连接到Ni / Au焊盘金属化的足够的电通路。
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公开(公告)号:US20050074959A1
公开(公告)日:2005-04-07
申请号:US10676172
申请日:2003-10-01
IPC分类号: H01L21/44 , H01L23/31 , H01L23/485 , H01L23/532
CPC分类号: H01L24/05 , H01L23/3192 , H01L23/53223 , H01L24/03 , H01L2224/04042 , H01L2224/0501 , H01L2224/05022 , H01L2224/05082 , H01L2224/05124 , H01L2224/05155 , H01L2224/05644 , H01L2224/45124 , H01L2224/48744 , H01L2924/00014 , H01L2924/01006 , H01L2924/01011 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01019 , H01L2924/01022 , H01L2924/01024 , H01L2924/01027 , H01L2924/01028 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01046 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/04941 , H01L2924/04953 , H01L2924/12042 , H01L2924/14 , H01L2924/00 , H01L2224/48
摘要: A method for sealing an exposed surface of a wire bond pad with a material that is capable of preventing a possible chemical attack during electroless deposition of Ni/Au pad metallurgy is provided. Specifically, the present invention provides a method whereby a TiN/Ti or TiN/Al cap is used as a protective coating covering exposed surfaces of a wire bond pad. The TiN/Ti or TiN/Al cap is not affected by alkaline chemistries used in forming the Ni/Au metallization, yet it provides a sufficient electrical pathway connecting-the bond pads to the Ni/Au pad metallization.
摘要翻译: 提供了一种通过能够防止在Ni / Au焊盘冶金的无电沉积期间可能的化学侵蚀的材料来密封引线接合焊盘的暴露表面的方法。 具体地说,本发明提供了一种TiN / Ti或TiN / Al帽作为覆盖引线接合焊盘露出表面的保护涂层的方法。 TiN / Ti或TiN / Al帽不受用于形成Ni / Au金属化的碱性化学物质的影响,但它提供了将接合焊盘连接到Ni / Au焊盘金属化的足够的电路。
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