公开(公告)号：US11697884B2

公开(公告)日：2023-07-11

申请号：US17400633

申请日：2021-08-12

Applicant: MacDermid Enthone Inc.

Inventor： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  John Commander ,  Richard Hurtubise

IPC: C25D3/38 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00 ,  C25D7/12

CPC classification number: C25D3/38 ,  C08G65/24 ,  C08G65/33317 ,  C08G73/0627 ,  H01L24/11 ,  C25D7/123 ,  H01L2224/11462 ,  H01L2924/01029 ,  H01L2924/3656

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：US11124888B2

公开(公告)日：2021-09-21

申请号：US16334098

申请日：2017-09-20

Applicant: MacDermid Enthone Inc.

Inventor： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, Jr. ,  John Commander ,  Richard Hurtubise

IPC: C25D3/38 ,  C25D7/12 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor, and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：US20180355502A1

公开(公告)日：2018-12-13

申请号：US15617482

申请日：2017-06-08

Applicant: MacDermid Enthone Inc.

Inventor： Elie Najjar ,  John Commander ,  Thomas Richardson ,  Tao Chi Liu ,  Jiang Chiang

IPC: C25D7/12 ,  C25D3/38 ,  C25D5/02 ,  C25D5/34 ,  H01L21/288 ,  H01L23/00 ,  H01L21/768 ,  H01L23/522 ,  H01L23/532

CPC classification number: C25D7/123 ,  C25D3/38 ,  C25D5/02 ,  C25D5/34 ,  H01L21/2885 ,  H01L21/76879 ,  H01L23/3114 ,  H01L23/5226 ,  H01L23/53228 ,  H01L24/05 ,  H01L24/11 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/05017 ,  H01L2224/11462 ,  H01L2224/13005 ,  H01L2224/13017 ,  H01L2224/13147 ,  H01L2924/20641 ,  H01L2924/20642 ,  H01L2924/2075 ,  H01L2924/20751 ,  H01L2924/20752 ,  H01L2924/20753

Abstract: Features such as bumps, pillars and/or vias can be plated best using current with either a square wave or square wave with open circuit wave form. Using the square wave or square wave with open circuit wave forms of plating current, produces features such as bumps, pillars, and vias with optimum shape and filling characteristics. Specifically, vias are filled uniformly and completely, and pillars are formed without rounded tops, bullet shape, or waist curves. In the process, the metalizing substrate is contacted with an electrolytic copper deposition composition. The deposition composition comprises a source of copper ions, an acid component selected from among an inorganic acid, an organic sulfonic acid, and mixtures thereof, an accelerator, a suppressor, a leveler, and chloride ions.

公开(公告)号：US20220064811A1

公开(公告)日：2022-03-03

申请号：US17416703

申请日：2020-01-31

Applicant: MacDermid Enthone Inc.

Inventor： Eric Yakobson ,  Shaopeng Sun ,  Elie Najjar ,  Thomas Richardson ,  Vincent Paneccasio, Jr. ,  Wenbo Shao ,  Kyle Whitten

IPC: C25D3/18 ,  H01L21/768 ,  H01L21/288 ,  C25D7/12 ,  C25D5/02 ,  C25D21/10

Abstract: A nickel electrodeposition composition for via fill or barrier nickel interconnect fabrication comprising: (a) a source of nickel ions; (b) one or more polarizing additives; and (c) one or more depolarizing additives. The nickel electrodeposition composition may include various additives, including suitable acids, surfactants, buffers, and/or stress modifiers to produce bottom-up filling of vias and trenches.

公开(公告)号：US20210388519A1

公开(公告)日：2021-12-16

申请号：US17400633

申请日：2021-08-12

Applicant: MacDermid Enthone Inc.

Inventor： Thomas Richardson ,  Kyle Whitten ,  Vincent Paneccasio, JR. ,  John Commander ,  Richard Hurtubise

IPC: C25D3/38 ,  C08G65/24 ,  C08G65/333 ,  C08G73/06 ,  H01L23/00

Abstract: An electrodeposition composition comprising: (a) a source of copper ions; (b) an acid; (c) a suppressor; and (d) a leveler, wherein the leveler comprises a quaternized dipyridyl compound prepared by reacting a dipyridyl compound with a difunctional alkylating agent or a quaternized poly(epihalohydrin). The electrodeposition composition can be used in a process for forming a copper feature over a semiconductor substrate in wafer level packaging to electrodeposit a copper bump or pillar on an underbump structure of a semiconductor assembly.

公开(公告)号：US10294574B2

公开(公告)日：2019-05-21

申请号：US14854561

申请日：2015-09-15

Applicant: MacDermid Enthone Inc.

Inventor： Kyle Whitten ,  Vincent Paneccasio, Jr. ,  Thomas Richardson ,  Eric Rouya

IPC: C25D3/38 ,  C25D7/12

Abstract: A composition for electrolytic plating in microelectronics which contains a leveler that comprises the reaction product of an aliphatic di(t-amine) with an alkylating agent. Electrolytic plating methods employing the leveler, a method for making the leveler, and the leveler compound.