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18 条记录 (耗时 0.029 秒)

    Calibration of temperature control system for semiconductor processing chamber
    1.
    发明授权
    Calibration of temperature control system for semiconductor processing chamber 有权
    半导体处理室温度控制系统校准

    公开(公告)号：US08047706B2

    公开(公告)日：2011-11-01

    申请号：US12273440

    申请日：2008-11-18

    申请人： Matthew G. Goodman ,  Mark Hawkins ,  Ravinder Aggarwal ,  Michael Givens ,  Eric Hill ,  Gregory Bartlett

    发明人： Matthew G. Goodman ,  Mark Hawkins ,  Ravinder Aggarwal ,  Michael Givens ,  Eric Hill ,  Gregory Bartlett

    IPC分类号： G01K15/00

    CPC分类号： G01K15/00

    摘要： Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.

    摘要翻译： 用于校准气相沉积室中的温度控制系统的方法和系统。 温度传感器感测半导体处理室内的温度并产生输出信号。 温度控制系统通过基于输出信号控制加热装置来控制室温度。 一种方法包括指示控制系统目标设定点温度，以及通过气相沉积工艺将一层材料沉积在腔室的表面上。 在沉积层时测量该层的性质的变化，已知随着层的厚度周期性变化的性质增加。 允许测量的特性循环变化一个或多个循环。 如果一个或多个循环的时间段与与设定点温度相关联的期望时间段之间存在差异，则基于该差异来调整温度控制系统。

    Localized heating of substrates using optics
    2.
    发明授权
    Localized heating of substrates using optics 有权
    使用光学元件的基板的局部加热

    公开(公告)号：US06879777B2

    公开(公告)日：2005-04-12

    申请号：US10265519

    申请日：2002-10-03

    申请人： Matthew G. Goodman ,  Tony J Keeton ,  Ravinder Aggarwal ,  Mark Hawkins

    发明人： Matthew G. Goodman ,  Tony J Keeton ,  Ravinder Aggarwal ,  Mark Hawkins

    IPC分类号： H01L21/00 ,  F26B3/30

    CPC分类号： H01L21/67115

    摘要： An apparatus for processing a semiconductor substrate, including a process chamber having a plurality of walls and a substrate support to support the substrate within the process chamber. A radiative heat source is positioned outside the process chamber to heat the substrate through the walls when the substrate is positioned on the substrate support. In some embodiments, lenses are positioned between the heat source and the substrate to focus or diffuse radiation from the heat source and thereby selectively alter the radiation intensity incident on certain portions of the substrate. In other embodiments, diffusing surfaces are positioned between the heat source and the substrate to diffuse radiation from the heat source and thereby selectively reduce the radiation intensity incident on certain portions of the substrate.

    摘要翻译： 一种用于处理半导体衬底的设备，包括具有多个壁的处理室和用于在处理室内支撑衬底的衬底支撑件。 当衬底定位在衬底支撑件上时，辐射热源位于处理室外部以通过壁加热衬底。 在一些实施例中，透镜位于热源和基板之间，以聚焦或散射来自热源的辐射，从而选择性地改变入射在基板的某些部分上的辐射强度。 在其它实施例中，扩散表面位于热源和衬底之间以扩散来自热源的辐射，从而选择性地降低入射到衬底的某些部分上的辐射强度。

    Substrate support system for reduced autodoping and backside deposition
    3.
    发明申请
    Substrate support system for reduced autodoping and backside deposition 有权
    用于减少自动掺杂和背面沉积的基板支撑系统

    公开(公告)号：US20050193952A1

    公开(公告)日：2005-09-08

    申请号：US11057111

    申请日：2005-02-11

    申请人： Matt Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory Bartlett ,  Joseph Italiano ,  Bob Haro

    发明人： Matt Goodman ,  Jereon Stoutyesdijk ,  Ravinder Aggarwal ,  Mike Halpin ,  Tony Keeton ,  Mark Hawkins ,  Lee Haen ,  Armand Ferro ,  Paul Brabant ,  Robert Vyne ,  Gregory Bartlett ,  Joseph Italiano ,  Bob Haro

    IPC分类号： C23C16/00 ,  C23C16/458 ,  C30B25/12 ,  C30B25/14 ,  H01L21/00 ,  H01L21/687

    CPC分类号： H01L21/68735 ,  H01J37/32871 ,  H01L21/67028

    摘要： A substrate support system comprises a relatively thin circular substrate holder having a plurality of passages extending between top and bottom surfaces thereof. The substrate holder includes a single substrate support ledge or a plurality of substrate support spacer vanes configured to support a peripheral portion of the substrate backside so that a thin gap is formed between the substrate and the substrate holder. The vanes can be angled to resist backside deposition of reactant gases as the substrate holder is rotated. A hollow support member provides support to an underside of the substrate holder. The hollow support member is configured to convey gas (e.g., inert gas or cleaning gas) upward into one or more of the passages of the substrate holder. The upwardly conveyed gas flows into the gap between the substrate and the substrate holder. Depending upon the embodiment of the invention, the gas in the gap can then flow either (1) outward and upward around the substrate edge or (2) downward through passages of the substrate holder, if any, that do not lead back into the hollow support member. The gas that flows outward and upward around the substrate edge inhibits backside deposition of reactant gases above the substrate. The gas that flows downward through the passages that do not lead back to the support member advantageously inhibits autodoping by sweeping out-diffused dopant atoms away from the substrate front side. In one embodiment, the support member comprises a hollow multi-armed support spider that conveys gas into selected ones of the passages. In another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all of the passages. In yet another embodiment, the support member comprises a bowl- or cup-shaped structure that conveys gas upward into all but one or more of the passages.

    摘要翻译： 衬底支撑系统包括相对薄的圆形衬底保持器，其具有在其顶表面和底表面之间延伸的多个通道。 衬底保持器包括单个衬底支撑凸缘或多个衬底支撑间隔器叶片，其构造成支撑衬底背面的周边部分，使得在衬底和衬底保持器之间形成薄的间隙。 当基板保持器旋转时，叶片可以成角度以抵抗反应气体的背面沉积。 中空的支撑构件为衬底保持器的下侧提供支撑。 中空支撑构件被构造成将气体（例如，惰性气体或清洁气体）向上输送到衬底保持器的一个或多个通道中。 向上输送的气体流入基板和基板支架之间的间隙。 根据本发明的实施例，间隙中的气体然后可以（1）围绕衬底边缘向外和向上流动，或者（2）向下通过衬底保持器的通道（如果有的话），其不会引导回到空心 支持会员 在衬底边缘周围向外和向上流动的气体阻止在衬底上方的反应物气体的背面沉积。 通过通道向下流动的气体不会返回到支撑构件，有利地通过从扩散的掺杂​​剂原子远离衬底正面来扫除自发掺杂。 在一个实施例中，支撑构件包括将气体输送到选定的通道中的中空多臂支撑蜘蛛。 在另一个实施例中，支撑构件包括将气体向上输送到所有通道中的碗形或杯状结构。 在另一个实施例中，支撑构件包括碗形或杯状结构，其将气体向上输送到除了一个或多个通道中的所有通道中。

    Two-stage load for processing both sides of a wafer
    7.
    发明申请
    Two-stage load for processing both sides of a wafer 审中-公开
    用于处理晶片两侧的两阶段负载

    公开(公告)号：US20050176252A1

    公开(公告)日：2005-08-11

    申请号：US10775522

    申请日：2004-02-10

    申请人： Matthew Goodman ,  Ravinder Aggarwal ,  Mark Hawkins ,  Tony Keeton

    发明人： Matthew Goodman ,  Ravinder Aggarwal ,  Mark Hawkins ,  Tony Keeton

    IPC分类号： C23C16/00 ,  C23C16/458 ,  H01L21/302 ,  H01L21/687

    CPC分类号： H01L21/68728 ,  B24B37/08 ,  C23C16/4583 ,  H01L21/68735

    摘要： Disclosed herein is an apparatus and method for treating the frontside and backside of a semiconductor substrate with a process gas. A reactor chamber is equipped with a first load platform configured to permit the access of a process gas to both sides of a substrate. In some embodiments, the apparatus also comprises a second load platform configured for further processing the frontside of the substrate. The substrate is loaded on the first load platform and processed on both sides, then moved to the second load platform and processed on one side.

    摘要翻译： 本文公开了一种用工艺气体处理半导体衬底的前侧和后侧的装置和方法。 反应室配备有第一负载平台，其构造成允许工艺气体进入衬底的两侧。 在一些实施例中，该装置还包括配置用于进一步处理衬底的前侧的第二负载平台。 将基板装载在第一负载平台上并在两侧进行处理，然后移动到第二负载平台并在一侧进行处理。

    Substrate holder with deep annular groove to prevent edge heat loss
    9.
    发明授权
    Substrate holder with deep annular groove to prevent edge heat loss 有权
    底座支架具有深环形槽，防止边缘热损失

    公开(公告)号：US06709267B1

    公开(公告)日：2004-03-23

    申请号：US10331444

    申请日：2002-12-27

    申请人： Mark Hawkins ,  Matthew G. Goodman ,  Loren Jacobs

    发明人： Mark Hawkins ,  Matthew G. Goodman ,  Loren Jacobs

    IPC分类号： F27D500

    CPC分类号： F27D99/0001 ,  C23C16/4585 ,  C30B25/12 ,  C30B31/14 ,  F27B17/0025 ,  F27D5/0037 ,  H01L21/67103 ,  Y10S414/135

    摘要： A substrate holder for processing a semiconductor substrate includes a deep, generally vertical annular groove configured to impede the radial flow of heat within the holder and reduce heat loss from the annular side edge of the holder. The holder includes one or more support elements, such as a flat contiguous surface or a plurality of protrusions defined by intersecting grooves. The one or more support elements are configured to support a substrate a particular size in a support plane defined by the one or more support elements. The groove is configured to surround an outer edge of the substrate when the substrate is supported on the one or more support elements. In a preferred embodiment, the groove has a depth of at least 25% of the thickness of the substrate holder.

    摘要翻译： 用于处理半导体衬底的衬底保持器包括深的大致垂直的环形槽，其被构造成阻止保持器内的热量的径向流动并减少从保持器的环形侧边缘的热损失。 保持器包括一个或多个支撑元件，例如平坦的邻接表面或由相交槽限定的多个突起。 一个或多个支撑元件构造成在由一个或多个支撑元件限定的支撑平面中支撑特定尺寸的基板。 当衬底被支撑在一个或多个支撑元件上时，凹槽被构造成围绕衬底的外边缘。 在优选实施例中，凹槽的深度至少为衬底保持器的厚度的25％。