摘要:
The present invention aims to manufacture a large size semiconductor device with the inter-substrate transcription technology of thin film circuits. Enlargement is enabled by disposing a plurality of second substrates (21) in a tile shape. As the second substrate (21), a print substrate or flexible print circuit having double-sided wiring or multilayer wiring is employed. The plurality of second substrates (21) is driven independently, and the plurality of second substrates (21) is made to mutually overlap, and a drive circuit (23) is disposed at such overlapping portion. Moreover, the plurality of second substrates (21) is made to mutually overlap, and the mutual circuits are connected at such overlapping portion.
摘要:
In a semiconductor device made by forming functional elements on a first substrate, transferring the element chip onto a second substrate, and connecting first pads on the element chip to second pads on the second substrate, the area or the width of the first is increased. The first pads can be securely connected to the second pads even when misalignment occurs during the separating and transferring processes. Only the first pads are formed on a surface of the element chip at the second-substrate-side. The functional elements are formed to be farther from the second substrate than the first pads. Alternatively, only the first pads are formed on a surface of the element chip remote from the second substrate, and the functional elements are formed to be closer to the second substrate than the first pads. Alternatively, the first pads are formed on both the surface of the element chip at the second-substrate-side and the surface of the element chip remote from the second substrate.
摘要:
In a semiconductor device made by forming functional elements on a first substrate, transferring the element chip onto a second substrate, and connecting first pads on the element chip to second pads on the second substrate, the area or the width of the first is increased. The first pads can be securely connected to the second pads even when misalignment occurs during the separating and transferring processes. Only the first pads are formed on a surface of the element chip at the second-substrate-side. The functional elements are formed to be farther from the second substrate than the first pads. Alternatively, only the first pads are formed on a surface of the element chip remote from the second substrate, and the functional elements are formed to be closer to the second substrate than the first pads. Alternatively, the first pads are formed on both the surface of the element chip at the second-substrate-side and the surface of the element chip remote from the second substrate.
摘要:
An organic electroluminescent device includes a substrate that is conductive at least on a first surface; a first insulating film located on the first surface of the substrate and including a portion of a first opening, a portion of a second opening, and a portion of a third opening; a semiconductor film located on the first insulating film and receiving a current from the first surface of the substrate via the portion of a first opening; a second insulating film located on the semiconductor film and in contact with the substrate via the portion of a second opening; a capacitance electrode located on the second insulating film; a gate electrode located on the second insulating film and overlapping the semiconductor film; an intermediate insulating film located on the gate electrode and capacitance electrode; a pixel electrode located on the intermediate insulating film and receiving a current via the semiconductor film; a light-emitting layer located on the pixel electrode; a common electrode located on the light-emitting layer; and a power supply section located on the first insulating film and supplying a current to the first surface of the substrate via the portion of a third opening. The second insulating film is interposed between the capacitance electrode and the substrate via the portion of a second opening.
摘要:
Aspects of the invention can provide a method for driving an electro-optical device, an electro-optical device and electronic equipment that can solve the insufficient supply of the data current and current fluctuation. In the driving method, a data current can be applied to a plurality of pixels provided to a display panel unit with same value through the data line regardless of grayscale data. Upon supply of the data current, in the pixel, a transistor selected in reproduction can be turned on such that a drive current corresponding to the data current output from a driving transistor is supplied to an organic EL element, thereby emitting light. A light-off signal can be supplied to the pixel at predetermined timing such that the organic EL element emits light only in the light-emitting period computed based on the grayscale data. The pixel to which a constant data current can be supplied emits light at a luminance corresponding to the grayscale data by changing the light-emitting period corresponding to the grayscale data.
摘要:
Aspects of the invention can provide a method for driving an electro-optical device, an electro-optical device and electronic equipment that can solve the insufficient supply of the data current and current fluctuation. In the driving method, a data current can be applied to a plurality of pixels provided to a display panel unit with same value through the data line regardless of grayscale data. Upon supply of the data current, in the pixel, a transistor selected in reproduction can be turned on such that a drive current corresponding to the data current output from a driving transistor is supplied to an organic EL element, thereby emitting light. A light-off signal can be supplied to the pixel at predetermined timing such that the organic EL element emits light only in the light-emitting period computed based on the grayscale data. The pixel to which a constant data current can be supplied emits light at a luminance corresponding to the grayscale data by changing the light-emitting period corresponding to the grayscale data.
摘要:
An electro-optical device which has a program period, a light-emitting period, an erasing period, and a lights-off period in one frame and controls the light-emitting period according to a light emission gray-scale level including a driving transistor that includes a current control terminal, a current input terminal, and a current output terminal, and controls a current amplifying ratio on the basis of a voltage between the current control terminal and the current input terminal, an electro-optical element that is supplied with the driving current from the driving transistor to emit light, a storage capacitor that stores the charge corresponding to the voltage between the current control terminal and the current input terminal of the driving transistor, a constant current source that outputs a constant current that is independent of the light emission gray-scale level, a voltage source that outputs a driving stop signal that turns off the driving transistor, a selection transistor that opens/closes a current path connecting any one of the constant current source and the voltage source with the driving transistor, and a scan line that outputs open/close signals that turn on/off the selection transistor. The program period is a period when the selection transistor is turned on by outputting an open signal to the scan line, and when the constant current flows from the constant current source to the driving transistor through the current path, the charge corresponding to the voltage between the current control terminal and the current input terminal is stored in the storage capacitor. The light-emitting period is a period when the selection transistor is turned off by outputting a close signal to the scan line, and the voltage corresponding to the charge stored in the storage capacitor is supplied between the current control terminal and the current input terminal of the driving transistor to supply the driving current to the electro-optical element. The erasing period is a period when the selection transistor is turned on by outputting the open signal to the scan line, and the driving stop signal is supplied to the driving transistor from the voltage source through the current path to turn off the driving transistor so that the electro-optical element stops emitting light. The lights-off period is a period when the selection transistor is turned off by outputting the close signal to the scan line, and the electro-optical element retains a non-light-emitting state. A time constant of the scan line is set so that signal delay of the open/close signals is 10% or less of a theoretical value.
摘要:
To lower the cost of manufacturing a display device, the present invention comprises a step of forming on a first substrate a release layer that releases when subjected to a specific energy, a step of forming on the release layer a plurality of pixel circuits for driving the pixels of the electro-optical device, a step of causing at least one of the pixel circuits formed on the first substrate to face the position on a second circuit, used for disposing the pixel circuits, where the pixel circuits are to be disposed, and electrically connecting that pixel circuit to the second substrate, and a step of imparting energy to a part of the release layer where the pixel circuits to be released are provided, and releasing the one pixel circuit from the first substrate along with the second substrate.
摘要:
The invention provides a method of manufacturing a semiconductor device, capable of enhancing characteristics of each semiconductor element constituting the semiconductor device, while reducing or suppressing non-uniformity in the characteristics thereof. When forming a thin-film circuit constructed by arranging a plurality of pixel circuits on a glass substrate, first, a plurality of concave portions to be seeds in crystallizing a semiconductor film are formed on the glass substrate with a pitch n times an array pitch of a plurality of pixel circuits. Then, an amorphous silicon film is formed on the glass substrate on which the concave portions are formed, and by crystallizing the silicon film by heating, a substantially monocrystalline silicon film is formed within a region centered on the concave portions. Using each of the substantially monocrystalline silicon film formed substantially centered around the respective concave portions, pixel circuits are formed.
摘要:
An electrooptic device includes first and second substrates that are disposed opposing each other with an electrooptic material layer therebetween, a sealing material that bonds the first and second substrates, a pixel area, and an ion trap portion between the pixel area and the sealing material. The ion trap portion includes first and second electrodes that are formed in a comb-tooth shape and are disposed so that branch electrodes of the first electrode and branch electrodes of the second electrode are engaged with each other. A direction of the branch electrodes intersects with an orientation direction of the electrooptic material at an interface between the electrooptic material layer and the first substrate.