公开(公告)号：US07760365B2

公开(公告)日：2010-07-20

申请号：US12047580

申请日：2008-03-13

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： G01B11/02

CPC分类号： G01M11/0271 ,  G01M11/0221

摘要： A relationship between surface decenter of a lens 1 under test and surface-decenter comatic aberration and a relationship between surface tilt of the lens 1 under test and surface-tilt comatic aberration are calculated by computer simulation. The surface tilt of the lens 1 under test is calculated by measuring a transmissive wavefront of a projecting portion 3, and comatic aberration of the lens 1 under test is calculated by measuring a transmissive wavefront of a lens portion 2. The surface-decenter comatic aberration that occurs due to the surface decenter is calculated by subtracting the surface-tilt comatic aberration from the calculated comatic aberration. The surface decenter of the lens 1 under test is calculated based on the calculated surface-decenter comatic aberration.

摘要翻译： 通过计算机模拟计算被测透镜1的表面分解度与表面衰减彗形像差之间的关系以及被测透镜1的表面倾斜与表面倾斜彗形像差之间的关系。 通过测量突出部分3的透射波前来计算被测镜头1的表面倾斜，并且通过测量透镜部分2的透射波前来计算被测透镜1的彗形像差。表面渐变彗形像差 通过从计算的彗形像差中减去表面倾斜彗差来计算出由于表面偏心度而发生的。 基于所计算出的表面渐变彗形像差计算被测透镜1的表面偏心度。

公开(公告)号：US07443899B2

公开(公告)日：2008-10-28

申请号：US10986038

申请日：2004-11-12

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： H01S5/00

CPC分类号： H01S5/18377 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/18394

摘要： A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer, and an additional reflective layer formed over the second reflective layer so as to cover the opening, wherein the additional reflective layer is covered, at least at a portion thereof, with a second conductive layer.

摘要翻译： 表面发射半导体激光二极管包括衬底，形成在衬底上的第一反射层，形成在第一反射层上的有源层，形成在有源层上的第二反射层，在其中形成有开口的第一导电层， 第二反射层，以及形成在第二反射层上以覆盖开口的附加反射层，其中附加反射层至少在其一部分处被第二导电层覆盖。

公开(公告)号：US20060086193A1

公开(公告)日：2006-04-27

申请号：US11256956

申请日：2005-10-25

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： G01N3/02

CPC分类号： G03F7/70825 ,  G03F7/70591 ,  G03F7/70783

摘要： A subject having a test surface is held by a holder so that an axis line of the test surface intersects the direction of gravity and applied with a load, from above and beneath, that is optimized for accurate measurement of surface profile of the test surface. For optimization of the load, the test surface is applied with variable exploratory load strong enough to cause bending deformation in the test surface and a linear-functional relationship existing between more than two different exploratory loads and sizes of surface deformation caused with the different exploratory loads is derived. With the aid of linear-functional relationship, a load that induces the subject to cause surface deformation less than a predetermined size of surface deformation admissible, for example, as a manufacturing en-or is used as an optimized load.

摘要翻译： 具有测试表面的受试者由保持器保持，使得测试表面的轴线与重力方向相交，并且从上下方向施加用于精确测量测试表面的表面轮廓的优化的负载。 为了优化负载，试验表面采用足够强的可变探测载荷，在试验表面引起弯曲变形，并存在两个不同探测载荷之间的线性函数关系和不同探测载荷引起的表面变形尺寸 是派生的。 借助于线性函数关系，引起受试者引起表面变形小于预定尺寸的表面变形的负载可允许，例如作为制造工具或被用作优化的负载。

公开(公告)号：US06985605B2

公开(公告)日：2006-01-10

申请号：US10196426

申请日：2002-07-17

申请人： Nobuaki Ueki ,  Katsuyo Kubo

发明人： Nobuaki Ueki ,  Katsuyo Kubo

IPC分类号： G06K9/00 ,  G01B11/02

CPC分类号： G01B11/2441 ,  G01B9/02057 ,  G01B9/02083

摘要： In a phase unwrapping method for fringe image analysis, when storing newly calculated numeric data into a storage list, the new numeric data is initially compared with numeric data of a representative rank within each rank block in the storage list, whereby the rank block to store the data is chosen. Subsequently, the new numeric data is compared with each of respective numeric data within thus chosen rank block, so as to determine a rank at which the new numeric data is to be stored, and then is stored into the storage list. Along with the storing of numeric data, rank data is updated.

公开(公告)号：US20050286596A1

公开(公告)日：2005-12-29

申请号：US11009057

申请日：2004-12-13

申请人： Naotaka Mukoyama ,  Nobuaki Ueki

发明人： Naotaka Mukoyama ,  Nobuaki Ueki

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/183

CPC分类号： H01S5/0421 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/18388 ,  H01S2301/176 ,  H01S2301/18

摘要： A vertical cavity surface emitting laser diode includes a lower semiconductor reflector, an active region, an upper semiconductor reflector constituting a resonator with the lower semiconductor reflector, a metallic part being formed on the upper semiconductor reflector, which has a first aperture defining an output region of laser light generated in the active region, and a light confining region being provided between the metallic part and the lower semiconductor reflector, and having a second aperture defining an emission region of the laser light. The upper semiconductor reflector includes a lenticular medium having a convex surface toward the lower semiconductor reflector.

摘要翻译： 垂直腔表面发射激光二极管包括下半导体反射器，有源区，构成具有下半导体反射器的谐振器的上半导体反射器，金属部分形成在上半导体反射器上，金属部分具有限定输出区域的第一孔 在激活区域中产生的激光，以及设置在金属部件和下半导体反射器之间的限光区域，并具有限定激光发射区域的第二孔。 上半导体反射器包括具有朝向下半导体反射器的凸表面的透镜介质。

公开(公告)号：US20050265412A1

公开(公告)日：2005-12-01

申请号：US10986038

申请日：2004-11-12

申请人： Nobuaki Ueki

发明人： Nobuaki Ueki

IPC分类号： H01S3/08 ,  H01S5/183 ,  H01S5/187

CPC分类号： H01S5/18377 ,  H01S5/18311 ,  H01S5/18338 ,  H01S5/1835 ,  H01S5/18369 ,  H01S5/18394

摘要： A surface emitting semiconductor laser diode includes a substrate, a first reflective layer formed over the substrate, an active layer formed over the first reflective layer, a second reflective layer formed over the active layer, a first conductive layer having an opening therein and formed over the second reflective layer, and an additional reflective layer formed over the second reflective layer so as to cover the opening, wherein the additional reflective layer is covered, at least at a portion thereof, with a second conductive layer.

摘要翻译： 表面发射半导体激光二极管包括衬底，形成在衬底上的第一反射层，形成在第一反射层上的有源层，形成在有源层上的第二反射层，在其中形成有开口的第一导电层， 第二反射层，以及形成在第二反射层上以覆盖开口的附加反射层，其中附加反射层至少在其一部分处被第二导电层覆盖。

公开(公告)号：US20050111507A1

公开(公告)日：2005-05-26

申请号：US10882268

申请日：2004-07-02

申请人： Nobuaki Ueki ,  Fumio Koyama

发明人： Nobuaki Ueki ,  Fumio Koyama

IPC分类号： H01S5/00 ,  H01S5/028 ,  H01S5/042 ,  H01S5/06 ,  H01S5/183

CPC分类号： H01S5/18377 ,  H01S5/0425 ,  H01S5/06226 ,  H01S5/18311 ,  H01S5/18325 ,  H01S5/18341 ,  H01S5/18358 ,  H01S5/18369 ,  H01S5/18394 ,  H01S2301/166

摘要： A surface-emitting semiconductor laser includes a first reflection layer formed on a substrate; an active layer formed on the first reflection layer; a second reflection layer formed on the active region; an electrode that has an aperture that defines a light emission range and is provided on the second reflection layer so that an uppermost layer of the second reflection layer is exposed through the aperture; and a third reflection layer that is provided on the electrode so as to cover the aperture. The third reflection layer includes a conductive film that electrically contacts the uppermost layer of the second reflection layer.

摘要翻译： 表面发射半导体激光器包括形成在基板上的第一反射层; 形成在所述第一反射层上的有源层; 形成在有源区上的第二反射层; 具有限定发光范围的孔的电极，设置在所述第二反射层上，使得所述第二反射层的最上层通过所述孔露出; 以及设置在电极上以覆盖孔的第三反射层。 第三反射层包括与第二反射层的最上层电接触的导电膜。

公开(公告)号：US5990494A

公开(公告)日：1999-11-23

申请号：US827358

申请日：1997-03-27

申请人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Mario Fuse

发明人： Yasuji Seko ,  Akemi Murakami ,  Hiromi Otoma ,  Nobuaki Ueki ,  Mario Fuse

IPC分类号： B41J2/44 ,  B41J2/45 ,  B41J2/455 ,  F21S2/00 ,  F21V23/00 ,  F21Y101/02 ,  H01L33/06 ,  H01L33/16 ,  H01L33/26 ,  H01L33/58 ,  H01L33/60 ,  H01S5/00 ,  H01S5/02 ,  H04N1/04 ,  H01L33/00

CPC分类号： B41J2/45

摘要： Described is an optical equipment using a semiconductor light emitting device array which has light emitting points formed thereon at a high density and has highly reliability. The optical equipment according to the present invention features that it is equipped with a light emitting device array on which light emitting points LP have been arranged two-dimensionally, focusing means for focusing the light from the light emitting points, photo-detecting means which is disposed at the position where the light focused through the focusing means forms image formation points, and transferring means for transferring the image formation points relative to the photo-detecting means; said light-emitting device array being composed of a plurality of semiconductor chips and adjacent end surfaces of two semiconductor chips being bonded each other so as to have an inclination against the transferring direction.

摘要翻译： 描述了使用其中以高密度形成有发光点并具有高度可靠性的半导体发光器件阵列的光学设备。 根据本发明的光学设备的特征在于，它配备有发光器件阵列，发光点LP已经二维排列在其上，聚焦装置用于聚焦来自发光点的光，光检测装置是 设置在通过聚焦装置聚焦的光形成图像形成点的位置，以及用于相对于光检测装置传送图像形成点的传送装置; 所述发光器件阵列由多个半导体芯片组成，并且两个半导体芯片的相邻端面彼此接合以具有相对于传输方向的倾斜。

公开(公告)号：US5588016A

公开(公告)日：1996-12-24

申请号：US523389

申请日：1995-09-05

申请人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

发明人： Hiromi Otoma ,  Nobuaki Ueki ,  Hideki Fukunaga ,  Hideo Nakayama ,  Yasuji Seko ,  Mario Fuse

IPC分类号： H01S5/00 ,  H01S5/042 ,  H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S3/19

CPC分类号： B82Y20/00 ,  H01S5/0421 ,  H01S5/20 ,  H01S5/2059 ,  H01S5/3206 ,  H01S5/321 ,  H01S5/32325 ,  H01S5/34326

摘要： A semiconductor laser device in which semiconductor layers of an n-type cladding layer, a quantum well active layer 106, a p-type cladding layer, and an intermediate layer are formed on an n-type GaAs substrate in successive order, and a mixed-crystal is formed in a region except the semiconductor layers of the contact layer and the lower part of the contact layer by diffusing Si into the structure from above the intermediate layer, characterized in that the contact layer and the intermediate layer are made of n-type or nonconductive semiconductor material, and a p-type low-resistance region, formed by diffusing Zn into the structure from above the contact layer, is profiled so as not to overlap with the mixed-crystal region formed by Si diffusion.

摘要翻译： 在n型GaAs衬底上依次形成有n型包覆层，量子阱有源层106，p型覆层，中间层的半导体层的半导体激光器件，混合 通过从中间层的上方将Si扩散到结构体中，在接触层的半导体层和接触层的下部之间的区域中形成晶体，其特征在于，接触层和中间层由n- 型或非导电半导体材料，以及通过从接触层上方将Zn扩散到结构中形成的p型低电阻区域，以与Si扩散形成的混合晶体区域不重叠。

公开(公告)号：US20090209871A1

公开(公告)日：2009-08-20

申请号：US12196412

申请日：2008-08-22

申请人： Nobuaki Ueki ,  Ryoji Ishii

发明人： Nobuaki Ueki ,  Ryoji Ishii

IPC分类号： A61B5/02 ,  A61B5/00

CPC分类号： A61B5/0261

摘要： Provided is an apparatus for measuring blood flow rate that includes a light emitting portion for irradiating living tissues with laser light, a photo-detector for detecting at least one of reflection, scattering, or absorption of the laser light, and an operation portion for calculating blood flow rate based on the difference between the spectrum of the laser light from the light emitting portion and the spectrum of the light detected by the photo-detector. The spectrum of the laser light has plural peaks.

摘要翻译： 本发明提供一种用于测量血液流量的装置，其包括用于用激光照射活组织的发光部分，用于检测激光的反射，散射或吸收中的至少一种的光检测器，以及用于计算 基于来自发光部的激光的光谱与由光检测器检测到的光的光谱之差的血流量。 激光的光谱具有多个峰。