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    Nonvolatile semiconductor memory
    1.
    发明授权
    Nonvolatile semiconductor memory 失效
    非易失性半导体存储器

    公开(公告)号：US5808940A

    公开(公告)日：1998-09-15

    申请号：US828757

    申请日：1997-03-25

    申请人： Noriyuki Ohta ,  Noriaki Kodama ,  Toshikatsu Jinbo

    发明人： Noriyuki Ohta ,  Noriaki Kodama ,  Toshikatsu Jinbo

    IPC分类号： G11C17/00 ,  G11C16/02 ,  G11C16/06 ,  G11C16/30 ,  G11C16/04

    CPC分类号： G11C16/30

    摘要： A nonvolatile semiconductor memory includes a cell array prepared by arranging erasable and programmable memory cell transistors in rows and columns, word lines arranged in correspondence with the respective rows of the cell array and connected to the control gates of the memory cell transistors, digit lines arranged in correspondence with the respective columns of the cell array and connected to the drains of the memory cell transistors, source lines connected to the sources of the memory cell transistors, and a source power supply circuit for applying a source voltage to the source lines in an erase operation. This memory erases by the source voltage data in the memory cell transistors in the rows and columns of the cell array. The source power supply circuit is a circuit including a first P-channel transistor which sets a current to be supplied to the source lines to a predetermined value in the erase operation in a range wherein the source voltage is lower than a predetermined potential, and a second P-channel transistor which sets the current to be supplied to the source lines so as to decrease faster than the current decreased by the characteristic of the first transistor with an increase in source voltage in a range wherein the source voltage is higher than the predetermined potential.

    摘要翻译： 非易失性半导体存储器包括通过以行和列排列可擦除可编程存储单元晶体管而制备的单元阵列，与单元阵列的各行相对应地布置并连接到存储单元晶体管的控制栅极的字线，布置的数字线 与电池阵列的各列对应并连接到存储单元晶体管的漏极，连接到存储单元晶体管的源极的源极线和用于将源极电压施加到源极线的源极电源电路 擦除操作。 该存储器由单元阵列的行和列中的存储单元晶体管中的源电压数据擦除。 源极电源电路是包括第一P沟道晶体管的电路，该第一P沟道晶体管在源极电压低于预定电位的范围内将要提供给源极线的电流设置在擦除操作中的预定值，并且 第二P沟道晶体管，其设置要提供给源极线的电流，以便在源极电压高于预定的范围内，随着源极电压的增加，电流降低得比第一晶体管的特性减小的电流快。 潜在。

    Structure of split gate transistor for use in a non-volatile semiconductor memory and method of manufacturing such a split gate transistor
    2.
    发明授权
    Structure of split gate transistor for use in a non-volatile semiconductor memory and method of manufacturing such a split gate transistor 失效
    用于非易失性半导体存储器的分离栅极晶体管的结构和制造这种分离栅极晶体管的方法

    公开(公告)号：US5691937A

    公开(公告)日：1997-11-25

    申请号：US701013

    申请日：1996-08-21

    申请人： Noriyuki Ohta

    发明人： Noriyuki Ohta

    IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  G11C16/04 ,  H01L29/68

    CPC分类号： H01L27/11521 ,  H01L27/115 ,  H01L29/42324

    摘要： A non-volatile semiconductor memory is composed of split gate type memory cell transistors, each of which comprises a source region and a drain region formed at a principal surface of a semiconductor substrate, separately from each other to form a channel region between the source region and the drain region. This channel region is divided into a first channel region adjacent to the drain region and a second channel region adjacent to the source region. A first gate insulator film is formed on a surface of the first channel region, and a control gate electrode is formed on the first gate insulator film. An insulator layer is formed on the source region and the drain region, and a second gate insulator film is formed on an upper surface and a pair of opposite side surfaces of the control gate electrode and on a surface of the second channel region. A floating gate electrode is formed on the second gate insulator film to have opposite ends terminating on the insulator layer formed on the source region and the insulator layer formed on the drain region, respectively.

    摘要翻译： 非易失性半导体存储器由分离栅型存储单元晶体管组成，其中每个分离栅型存储单元晶体管分别形成在半导体衬底的主表面上的源极区和漏极区，以形成源极区之间的沟道区 和漏极区域。 该沟道区域被分成与漏极区域相邻的第一沟道区域和与源极区域相邻的第二沟道区域。 第一栅极绝缘膜形成在第一沟道区的表面上，在第一栅极绝缘膜上形成控制栅电极。 在源极区域和漏极区域上形成绝缘体层，并且在控制栅电极的上表面和一对相对的侧表面上以及在第二沟道区域的表面上形成第二栅绝缘膜。 浮置栅电极形成在第二栅极绝缘膜上，具有分别在形成于源极区域上的绝缘体层和形成于漏极区域上的绝缘体层的相对端。

    Control device for direct-injection spark-ignition engine and method of setting fuel injection timing of the same
    3.
    发明授权
    Control device for direct-injection spark-ignition engine and method of setting fuel injection timing of the same 失效
    直喷式点火发动机的控制装置及其燃油喷射定时的设定方法

    公开(公告)号：US06681739B2

    公开(公告)日：2004-01-27

    申请号：US10145999

    申请日：2002-05-15

    申请人： Kiyotaka Mamiya ,  Masayuki Tetsuno ,  Takeo Yamauchi ,  Noriyuki Ohta

    发明人： Kiyotaka Mamiya ,  Masayuki Tetsuno ,  Takeo Yamauchi ,  Noriyuki Ohta

    IPC分类号： F02B1700

    CPC分类号： F02D41/3029 ,  F02B17/005 ,  F02B31/00 ,  F02B2075/125 ,  F02D37/02 ,  F02D41/34 ,  F02D41/401 ,  F02D2041/389 ,  F02D2200/1015 ,  F02F3/26 ,  Y02T10/123 ,  Y02T10/44

    摘要： A direct-injection spark-ignition engine in which a combustible mixture is produced around a spark plug at an ignition point by causing a tumble and a fuel spray to collide with each other in a combustion chamber during stratified charge combustion comprises a fuel pressure controller which controls fuel pressure such that penetration of the fuel spray from a fuel injector is progressively intensified with an increase in engine speed in a stratified charge combustion region and means for controlling fuel injection timing including an injection timing setter. The means for controlling fuel injection timing controls the injection timing in such a way that the interval between a fuel injection ending point and the ignition point becomes progressively shorter as engine speed increases under the same engine load conditions in the stratified charge combustion region.

    摘要翻译： 一种直喷式火花点火式发动机，其中通过在分层充气燃烧期间使燃烧室中的翻转和燃料喷雾相互碰撞，在点火点周围的火花塞周围产生可燃混合物，包括燃料压力控制器 控制燃料压力，使得来自燃料喷射器的燃料喷雾的渗透随着分层充气燃烧区域中的发动机速度的增加而逐渐增强，以及用于控制包括喷射正时设定器的燃料喷射正时的装置。 用于控制燃料喷射正时的装置以这样一种方式来控制喷射正时，使得随着发动机转速在分层充气燃烧区域的相同发动机负荷条件下增加，燃料喷射终点和点燃点之间的间隔逐渐变短。

    Nonvolatile semiconductor memory device with shaped floating gate
    4.
    发明授权
    Nonvolatile semiconductor memory device with shaped floating gate 失效
    具有形状浮动栅极的非易失性半导体存储器件

    公开(公告)号：US5557123A

    公开(公告)日：1996-09-17

    申请号：US319605

    申请日：1994-10-07

    申请人： Noriyuki Ohta

    发明人： Noriyuki Ohta

    IPC分类号： H01L21/8247 ,  H01L27/115 ,  H01L29/423 ,  H01L29/788 ,  H01L29/792 ,  G11C11/34

    CPC分类号： H01L29/42324 ,  H01L27/115

    摘要： A nonvolatile semiconductor memory device with improved writing characteristics. The memory device has memory cell transistors arranged in rows and columns. The memory cell transistors belonging to the same column share a source region and a drain region, and a channel region is disposed between the source and drain regions. The interval between the source and drain regions is the isolation width. Each of the memory cell transistors has a floating gate electrode disposed on the channel region with a first gate insulating film and a control gate electrode disposed on the floating gate electrode with a second gate insulating film. The floating gate electrode does not have a constant width and has a portion narrower than the isolation width which is free from the floating gate electrode. The narrower portion is typically formed as a constricted portion of the floating gate electrode.

    摘要翻译： 一种具有改进写入特性的非易失性半导体存储器件。 存储器件具有以行和列排列的存储单元晶体管。 属于同一列的存储单元晶体管共享源区和漏区，沟道区设置在源区和漏区之间。 源区和漏区之间的间隔是隔离宽度。 每个存储单元晶体管具有设置在具有第一栅极绝缘膜的沟道区上的浮置栅极和设置在具有第二栅极绝缘膜的浮置栅电极上的控制栅电极。 浮置栅电极不具有恒定的宽度，并且具有比不含浮栅电极的隔离宽度窄的部分。 较窄部分通常形成为浮栅电极的收缩部分。

    Piperidine derivatives
    5.
    发明授权
    Piperidine derivatives 失效
    哌啶衍生物

    公开(公告)号：US4241208A

    公开(公告)日：1980-12-23

    申请号：US968677

    申请日：1978-12-12

    申请人： Keisuke Murayama ,  Syoji Morimura ,  Takao Yoshioka ,  Toshimasa Toda ,  Eiko Mori ,  Hideo Horiuchi ,  Susumu Higashida ,  Katsuaki Matsui ,  Tomoyuki Kurumada ,  Noriyuki Ohta ,  Hisayou Ohsawa

    发明人： Keisuke Murayama ,  Syoji Morimura ,  Takao Yoshioka ,  Toshimasa Toda ,  Eiko Mori ,  Hideo Horiuchi ,  Susumu Higashida ,  Katsuaki Matsui ,  Tomoyuki Kurumada ,  Noriyuki Ohta ,  Hisayou Ohsawa

    IPC分类号： C08K5/34 ,  C07D498/10 ,  C07D519/00 ,  C07F9/553 ,  C07F9/572 ,  C07F9/6561 ,  C08K5/3435 ,  C07D471/10

    CPC分类号： C07D498/10 ,  C07D519/00 ,  C07F9/5532 ,  C07F9/5537 ,  C07F9/5728 ,  C07F9/6561 ,  C08K5/3435

    摘要： Piperidine derivatives having the formula ##STR1## wherein R' represents an alkyl, an acyl, an alkoxycarbonyl, an amino or nitroso group;X represents oxygen or sulfur;Y represents oxygen, sulfur or a group of the formula .dbd.N--R" in which R" is hydrogen or alkyl;Z represents oxygen or a group of the formula >N--R'" in which R'" is hydrogen or alkyl;n is an integer of 1 to 4; andR represents, when n is 1, alkyl, aryl, cycloalkyl, alkoxycarbonyl, substituted phosphino or substituted phosphinyl, when n is 2, alkylene, alkenylene, arylene, aralkylene; alkylenediphenylene, bis-(alkoxycarbonyl) alkylene, alkylene-bis-(oxycarbonylalkyl), dialkylene ether or diphenylene ether, when n is 3, alkanetriyl,tris-(alkoxycarbonyl)alkanetriyl, alkanetriyl-tris-(oxycarbonylalkyl) or a group of the formula ##STR2## in which p is an integer of 1 through 8 inclusive, and, when n is 4, alkanetetrayl,tetrakis-(alkoxycarbonyl) alkanetetrayl or alkanetetrayl-tetrakis-(oxycarbonylalkyl).The piperidine derivatives (I) of this invention are prepared in various manners and useful as stabilizers for synthetic polymers against thermal- and photo-deterioration thereof. A typical example of such a stabilizer is 1,3,8-triaza-3,8-dibenzyl-1,7,7,9,9-pentamethyl-spiro[4.5]decane-2,4-dione.

    摘要翻译： 具有式（I）的哌啶衍生物其中R'表示烷基，酰基，烷氧基羰基，氨基或亚硝基; X表示氧或硫; Y表示氧，硫或式= N-R“的基团，其中R”为氢或烷基; Z表示氧或式“N-R”'的基团，其中R“'是氢或烷基; n为1〜4的整数， 当n为1时，当n为1时，R表示烷基，芳基，环烷基，烷氧基羰基，取代的膦基或取代的氧膦基，当n为2时，亚烷基，亚烯基，亚芳基，亚芳基; 亚烷基亚苯基，二 - （烷氧基羰基）亚烷基，亚烷基 - 双 - （氧羰基烷基），二亚烷基醚或二亚苯基醚，当n为3时，烷三三基，三（烷氧羰基）烷三甲酰基，烷三三基 - 三 - （氧羰基烷基） 其中p为1〜8的整数，n为4时，为烷基四乙酰基，四（烷氧基羰基）烷基乙烯基或烷基四氮杂萘基 - （氧羰基烷基）。 本发明的哌啶衍生物（I）以各种方式制备，可用作合成聚合物的稳定剂，防止其和光劣化。 这种稳定剂的典型实例是1,3,8-三氮杂-3,8-二苄基-1,7,7,9,9-五甲基螺[4.5]癸烷-2,4-d离子。

    Direct-injection spark-ignition engine
    7.
    发明授权
    Direct-injection spark-ignition engine 失效
    直喷式点火发动机

    公开(公告)号：US06983733B2

    公开(公告)日：2006-01-10

    申请号：US10457752

    申请日：2003-06-09

    申请人： Hiroyuki Yamashita ,  Noriyuki Ohta ,  Fumihiko Saito ,  Keiji Araki

    发明人： Hiroyuki Yamashita ,  Noriyuki Ohta ,  Fumihiko Saito ,  Keiji Araki

    IPC分类号： F02B5/00

    CPC分类号： F02M45/02 ,  F02B17/005 ,  F02B23/105 ,  F02B2023/103 ,  F02B2075/125 ,  F02M61/1806 ,  F02M69/045 ,  Y02T10/123 ,  Y02T10/125

    摘要： A direct-injection spark-ignition engine includes a spark plug provided approximately at the center of the ceiling of a combustion chamber, and an injector having at its downstream end a nozzle which is located in an upper peripheral area of the combustion chamber, in which multiple openings are formed in the nozzle of the injector. Fuel is injected from the nozzle of the injector directly toward the proximity of an electrode of the spark plug. The directions of axis lines of the individual openings are set such that central points of fuel jets spewed out of the individual openings do not lie on the spark plug but are distributed around the electrode, slightly separated therefrom.

    摘要翻译： 直喷式火花点火发动机包括大致位于燃烧室顶部中心的火花塞，喷射器在其下游端具有位于燃烧室的上周边区域的喷嘴，其中， 在喷射器的喷嘴中形成多个开口。 燃料从注射器的喷嘴直接喷射到火花塞的电极附近。 各个开口的轴线的方向被设定为使得从各个开口喷出的燃料喷口的中心点不位于火花塞上，而是分布在电极周围，与其稍微分离。

    4-Piperidone derivatives, their preparation and their use as stabilizers
    10.
    发明授权
    4-Piperidone derivatives, their preparation and their use as stabilizers 失效
    4-哌啶酮衍生物，它们的制备及其作为稳定剂的用途

    公开(公告)号：US3933735A

    公开(公告)日：1976-01-20

    申请号：US470309

    申请日：1974-05-15

    申请人： Keisuke Murayama ,  Susumu Higashida ,  Katsuaki Matsui ,  Tomoyuki Kurumada ,  Noriyuki Ohta ,  Hisayu Ohsawa

    发明人： Keisuke Murayama ,  Susumu Higashida ,  Katsuaki Matsui ,  Tomoyuki Kurumada ,  Noriyuki Ohta ,  Hisayu Ohsawa

    IPC分类号： C08K5/3435 ,  C08K5/00

    CPC分类号： C08K5/3435

    摘要： 4-Piperidone derivatives having the formulae ##SPC1##Wherein R represents a phenyl or naphthyl group which may be substituted with nitro, lower alkyl, halogen, hydroxyl, lower alkyl hydroxy, hydroxy lower alkyl or formyl or a 5- or 6-membered heterocyclic group having as a hetero atom at least one of oxygen atom, sulfur atom and nitrogen atom and R.sub.1 represents hydrogen atom or an alkyl group of 1 to 4 carbon atoms. They are useful as stabilizers for various synthetic polymers against their photo- and thermal-deteriorations and the 4-piperidone derivatives (II) are prepared from the corresponding 2,2,6,6-tetramethyl-4-oxopiperidine derivatives by reaction with an aldehyde and the 4-piperidone derivatives (I) are prepared from the 4-piperidone derivatives (II) through dehydration.

    摘要翻译： 具有下式的4-哌啶酮衍生物，其中R表示可被硝基，低级烷基，卤素，羟基，低级烷基羟基，羟基低级烷基或甲酰基取代的苯基或萘基或具有如下基团的5-或6-元杂环基 氧原子，硫原子和氮原子中的至少一个为杂原子，R 1表示氢原子或碳原子数1〜4的烷基。 它们可用作各种合成聚合物对其光热和热变质的稳定剂，4-哌啶酮衍生物（II）由相应的2,2,6,6-四甲基-4-氧代哌啶衍生物与醛反应制备 通过脱水由4-哌啶酮衍生物（II）制备4-哌啶酮衍生物（I）。