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1.发明授权公开(公告)号：US09385258B2
公开(公告)日：2016-07-05
申请号：US14376165
申请日：2013-02-08
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Thomas Schlereth , Stephan Kaiser , Alexander Linkov
IPC: H01L31/12 , H01L31/16 , H01L33/46 , H01L33/52 , H01L31/0224 , H01L31/0232 , H01L33/60
CPC classification number: H01L31/16 , H01L31/022408 , H01L31/02325 , H01L31/02327 , H01L33/46 , H01L33/52 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.
Abstract translation: 光电子半导体器件包括至少一个辐射发射和/或辐射接收半导体芯片，其包括辐射通道表面和与辐射通道表面相对的安装表面，其中安装表面包括第一电接触结构和第二电接触结构 与第一电接触结构电绝缘，并且其中辐射通道表面不具有接触结构，至少部分包围至少一个半导体芯片的反射护套和围绕至少一个半导体芯片的保护护套和/或 反射护套至少在部分。
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公开(公告)号：US20150028361A1
公开(公告)日：2015-01-29
申请号：US14376165
申请日：2013-02-08
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Thomas Schlereth , Stephan Kaiser , Alexander Linkov
IPC: H01L31/16 , H01L31/0232 , H01L33/60
CPC classification number: H01L31/16 , H01L31/022408 , H01L31/02325 , H01L31/02327 , H01L33/46 , H01L33/52 , H01L33/56 , H01L33/58 , H01L33/60 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
Abstract: An optoelectronic semiconductor device includes at least one radiation-emitting and/or radiation-receiving semiconductor chip including a radiation passage surface and a mounting surface opposite the radiation passage surface, wherein the mounting surface includes a first electrical contact structure and a second electrical contact structure electrically insulated from the first electrical contact structure, and wherein the radiation passage surface is free of contact structures, a reflective sheath surrounding the at least one semiconductor chip at least in sections, and a protective sheath surrounding the at least one semiconductor chip and/or the reflective sheath at least in sections.
Abstract translation: 光电子半导体器件包括至少一个辐射发射和/或辐射接收半导体芯片，其包括辐射通道表面和与辐射通道表面相对的安装表面，其中安装表面包括第一电接触结构和第二电接触结构 与第一电接触结构电绝缘，并且其中辐射通道表面不具有接触结构，至少部分包围至少一个半导体芯片的反射护套和围绕至少一个半导体芯片的保护护套和/或 反射护套至少在部分。
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3.发明申请OPTOELECTRONIC SEMICONDUCTOR CHIP, AND LIGHT SOURCE COMPRISING THE OPTOELECTRONIC SEMICONDUCTOR CHIP 有权光电半导体芯片和包含光电子半导体芯片的光源公开(公告)号：US20150236206A1
公开(公告)日：2015-08-20
申请号：US14428952
申请日：2013-09-06
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Gaertner , Thomas Schlereth , Stephan Kaiser
CPC classification number: H01L33/38 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/382 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.
Abstract translation: 光电半导体芯片（10）被规定为包括具有至少两个彼此排列的有源区（21,22）的半导体层序列（20），其中有源区域（21,22）各自具有第一半导体区域 3），第二导电类型的第二半导体区域（5）和布置在第一半导体区域（3）和第二半导体区域（5）之间的辐射发射有源层（4）。 光电子半导体芯片（10）包括配置在半导体层序列（20）背离辐射出射表面（13）的一侧的镜层（6）和至少两个电触点（11,12） ），其布置在所述镜层（6）的背离辐射出射表面（13）的一侧。 此外，指定包括光电半导体芯片（10）的光源（30）。
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Patent Agency Ranking
4.发明申请公开(公告)号：US20150233534A1
公开(公告)日：2015-08-20
申请号：US14432007
申请日：2013-09-24
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Stephan Kaiser , Tony Albrecht , Michael Bestele , Jan Marfeld , Albert Schneider , Markus Kirsch
CPC classification number: F21V14/04 , F21V7/0066 , G01J1/0414 , G01J1/42 , G01J1/4228 , H01L25/10 , H01L25/13 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic component device includes a plurality of optoelectronic components that provide and/or absorb electromagnetic radiation; a reflector arranged in a beam path of the electromagnetic radiation of the plurality of optoelectronic components and which has a surface that is at least partly reflective with respect to the provided electromagnetic radiation; wherein the plurality of optoelectronic components at least partly surround the reflector or are at least partly surrounded by the reflector; and the reflector reflects a provided electromagnetic radiation such that a predefined field distribution of the reflected electromagnetic radiation is formed in the image plane of the optoelectronic component device.
Abstract translation: 光电子部件装置包括提供和/或吸收电磁辐射的多个光电子部件; 布置在所述多个光电子部件的电磁辐射的光束路径中并且具有相对于所提供的电磁辐射至少部分反射的表面的反射器; 其中所述多个光电子部件至少部分地围绕所述反射器或至少部分地被所述反射器包围; 并且反射器反射所提供的电磁辐射，使得反射的电磁辐射的预定场分布形成在光电子部件装置的图像平面中。
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公开(公告)号：US11222992B2
公开(公告)日：2022-01-11
申请号：US16041343
申请日：2018-07-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Stephan Kaiser , Andreas Ploessl
Abstract: An optoelectronic component, comprising: a structured semiconductor layer, a metallic mirror layer arranged on the semiconductor layer, a diffusion barrier layer arranged on the metallic mirror layer, a passivation layer arranged on the diffusion barrier layer, wherein the semiconductor layer comprises a mesa structure with mesa trenches. The mesa trenches taper from the surface of the semiconductor layer towards the mirror layer.
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公开(公告)号：US20180331254A1
公开(公告)日：2018-11-15
申请号：US16041343
申请日：2018-07-20
Applicant: OSRAM OPTO SEMICONDUCTORS GMBH
Inventor： Stephan Kaiser , Andreas Ploessl
CPC classification number: H01L33/0079 , H01L33/20 , H01L33/405 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic component, comprising: a structured semiconductor layer, a metallic mirror layer arranged on the semiconductor layer, a diffusion barrier layer arranged on the metallic mirror layer, a passivation layer arranged on the diffusion barrier layer, wherein the semiconductor layer comprises a mesa structure with mesa trenches. The mesa trenches taper from the surface of the semiconductor layer towards the mirror layer
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公开(公告)号：US09664342B2
公开(公告)日：2017-05-30
申请号：US14432007
申请日：2013-09-24
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Stephan Kaiser , Tony Albrecht , Michael Bestele , Jan Marfeld , Albert Schneider , Markus Kirsch
IPC: H01L31/0232 , F21K99/00 , G01J1/04 , G01J1/42 , H01L25/13 , H01L25/10 , F21V7/00 , F21V14/04 , F21Y105/00
CPC classification number: F21V14/04 , F21V7/0066 , G01J1/0414 , G01J1/42 , G01J1/4228 , H01L25/10 , H01L25/13 , H01L33/60 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic component device includes a plurality of optoelectronic components that provide and/or absorb electromagnetic radiation; a reflector arranged in a beam path of the electromagnetic radiation of the plurality of optoelectronic components and which has a surface that is at least partly reflective with respect to the provided electromagnetic radiation; wherein the plurality of optoelectronic components at least partly surround the reflector or are at least partly surrounded by the reflector; and the reflector reflects a provided electromagnetic radiation such that a predefined field distribution of the reflected electromagnetic radiation is formed in the image plane of the optoelectronic component device.
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8.发明授权Optoelectronic semiconductor chip, and light source comprising the optoelectronic semiconductor chip 有权光电子半导体芯片，以及包含光电半导体芯片的光源公开(公告)号：US09379286B2
公开(公告)日：2016-06-28
申请号：US14428952
申请日：2013-09-06
Applicant: OSRAM Opto Semiconductors GmbH
Inventor： Christian Gaertner , Thomas Schlereth , Stephan Kaiser
CPC classification number: H01L33/38 , H01L33/08 , H01L33/10 , H01L33/14 , H01L33/382 , H01L2924/0002 , H01L2924/00
Abstract: An optoelectronic semiconductor chip (10) is specified, comprising a semiconductor layer sequence (20) having at least two active regions (21, 22) arranged one above another, wherein the active regions (21, 22) each have a first semiconductor region (3) of a first conduction type, a second semiconductor region (5) of a second conduction type and a radiation-emitting active layer (4) arranged between the first semiconductor region (3) and the second semiconductor region (5). The optoelectronic semiconductor chip (10) comprises a mirror layer (6), which is arranged at a side of the semiconductor layer sequence (20) facing away from a radiation exit surface (13), and at least two electrical contacts (11, 12) which are arranged at a side of the mirror layer (6) facing away from the radiation exit surface (13). Furthermore, a light source (30) comprising the optoelectronic semiconductor chip (10) is specified.
Abstract translation: 光电半导体芯片（10）被规定为包括具有至少两个彼此排列的有源区（21,22）的半导体层序列（20），其中有源区域（21,22）各自具有第一半导体区域 3），第二导电类型的第二半导体区域（5）和布置在第一半导体区域（3）和第二半导体区域（5）之间的辐射发射有源层（4）。 光电子半导体芯片（10）包括配置在半导体层序列（20）背离辐射出射表面（13）的一侧的镜层（6）和至少两个电触点（11,12） ），其布置在所述镜层（6）的背离辐射出射表面（13）的一侧。 此外，指定包括光电半导体芯片（10）的光源（30）。
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