Abstract:
A method is provided for producing a plurality of radiation-emitting semiconductor chips, having the following steps: providing a plurality of semiconductor bodies (1) which are suitable for emitting electromagnetic radiation from a radiation exit face (3), applying the semiconductor bodies (1) to a carrier (2), applying a first mask layer (4) to regions of the carrier (2) between the semiconductor bodies (1), applying a conversion layer (5) to the entire surface of the semiconductor bodies (1) and the first mask layer (4) using a spray coating method, and removing the first mask layer (4), such that in each case a conversion layer (5) arises on the radiation exit faces (3) of the semiconductor bodies (1).
Abstract:
In at least one embodiment, the ring light module (1) comprises a plurality of optoelectronic semiconductor components (2) for producing electromagnetic radiation (R). A reflector (3) of the ring light module (1) comprises a reflective surface (30). The semiconductor components (2) are mounted on a support (4). Viewed in plan view of a main radiation side (45) of the ring light module (1), the reflector (3) comprises at most two planes of symmetry. The reflector (3) tapers in the direction towards the main radiation side (45). At least some of the main emission directions (20) of adjacent semiconductor components (2) are oriented differently from each other. The main emission directions (20) point towards the reflective surface (30).
Abstract:
An optoelectronic component device includes a plurality of optoelectronic components that provide and/or absorb electromagnetic radiation; a reflector arranged in a beam path of the electromagnetic radiation of the plurality of optoelectronic components and which has a surface that is at least partly reflective with respect to the provided electromagnetic radiation; wherein the plurality of optoelectronic components at least partly surround the reflector or are at least partly surrounded by the reflector; and the reflector reflects a provided electromagnetic radiation such that a predefined field distribution of the reflected electromagnetic radiation is formed in the image plane of the optoelectronic component device.
Abstract:
An optoelectronic component includes an optoelectronic semiconductor chip including a first potting body; and a second potting body, wherein the first potting body covers all lateral side surfaces and a top surface of the semiconductor chip, the first potting body has a bottom surface flush with a connection surface of the semiconductor chip, the second potting body has a bottom surface flush with the bottom surface of the first potting body, the second potting body completely covers all side surfaces of the first potting body facing away from the semiconductor chip, a top surface of the second potting body on the opposite of the connection surface is convexly curved, and the optoelectronic semiconductor chip has exclusively on its connection surface exposed electrical contact surfaces via which the semiconductor chip is electrically connectable and operable.
Abstract:
The invention relates to a method for producing a plurality of optoelectronic components, comprising the following steps: —providing an auxiliary support wafer (1) having contact structures (4), wherein the auxiliary support wafer comprises glass, sapphire, or a semiconductor material, —applying a plurality of radiation-emitting semiconductor bodies (5) to the contact structures (4), —encapsulating an least the contact structures (4) with a potting mass (10), and —removing the auxiliary support wafer (1). The invention further relates to an optoelectronic component.
Abstract:
An optoelectronic component device includes a plurality of optoelectronic components that provide and/or absorb electromagnetic radiation; a reflector arranged in a beam path of the electromagnetic radiation of the plurality of optoelectronic components and which has a surface that is at least partly reflective with respect to the provided electromagnetic radiation; wherein the plurality of optoelectronic components at least partly surround the reflector or are at least partly surrounded by the reflector; and the reflector reflects a provided electromagnetic radiation such that a predefined field distribution of the reflected electromagnetic radiation is formed in the image plane of the optoelectronic component device.
Abstract:
A semiconductor chip (10) is provided which comprises: a semiconductor layer sequence (20) with a p-type semiconductor region (5) and an n-type semiconductor region (3), a plurality of p-contacts (11a, 11b), which are connected electrically conductively with the p-type semiconductor region (5), and a plurality of n-contacts (12a, 12b), which are connected electrically conductively with the n-type semiconductor region (3), wherein: the p-contacts (11a, 11b) and the n-contacts (12a, 12b) are arranged on a rear side of the semiconductor chip (10), the semiconductor chip (10) comprises a plurality of regions (21, 22) arranged adjacent one another, and the regions (21, 22) each comprise one of the p-contacts (11a, 11b) and one of the n-contacts (12a, 12b).
Abstract:
The invention relates to an optoelectronic semiconductor element that emits mixed-color radiation when in operation. The optoelectronic semiconductor component comprises an optoelectronic semiconductor chip, a conversion element that has a curvature, and a spacer element that is arranged between the optoelectronic semiconductor chip and conversion element. The spacer has a curved surface that faces the conversion element, with the conversion element being in direct contact with the curved surface.
Abstract:
In an embodiment, the optoelectronic semiconductor device comprises an optoelectronic semiconductor chip for emitting a radiation. An optical element is disposed downstream of the semiconductor chip. The semiconductor chip and the optical element are embedded in a potting body. The optical element comprises a structured, contiguous and optically effective area, which is located inside the optical element directly at an optical contrast region, preferably an evacuated or gas-filled cavity. The optically effective area completely covers a radiation exit area of the semiconductor chip.
Abstract:
A ring light module having a plurality of optoelectronic semiconductor components for producing electromagnetic radiation, a reflector of the ring light module comprising a reflective surface, and a support. The semiconductor components are mounted on the support. In a plan view of a main radiation side of the ring light module, the reflector comprises at most two planes of symmetry. The reflector tapers in the direction towards the main radiation side. At least some of the main emission directions of adjacent optoelectronic semiconductor components are oriented differently from each other, and the main emission directions point towards the reflective surface.