公开(公告)号：US10483256B2

公开(公告)日：2019-11-19

申请号：US15520666

申请日：2015-10-21

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Juergen Moosburger ,  Andreas Ploessl

IPC: H01L27/02 ,  H01L33/38 ,  H01L33/62 ,  H01L27/15 ,  H01L33/40

Abstract: An optoelectronic semiconductor device and an apparatus with an optoelectronic semiconductor device are disclosed. In an embodiment the optoelectronic semiconductor component has an emission region including a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer, and an active region arranged between the first semiconductor layer and the second semiconductor layer for generating radiation, and a protection diode region. The semiconductor component has a contact for electrically contacting the semiconductor component externally. The contact has a first contact region that is connected to the emission region in an electrically conductive manner. The contact has further a second contact region that is spaced apart from the first contact region and connected to the protection diode region in an electrically conductive manner. The first contact region and the second contact region can be electrically contacted externally by a mutual end of a connecting line.

公开(公告)号：US20170317067A1

公开(公告)日：2017-11-02

申请号：US15520666

申请日：2015-10-21

Applicant: OSRAM opto Semiconductors GmbH

Inventor： Juergen Moosburger ,  Andreas Ploessl

IPC: H01L27/02 ,  H01L33/38 ,  H01L27/15 ,  H01L33/62 ,  H01L33/40

CPC classification number: H01L27/0248 ,  H01L27/15 ,  H01L33/382 ,  H01L33/387 ,  H01L33/405 ,  H01L33/62

Abstract: An optoelectronic semiconductor device and an apparatus with an optoelectronic semiconductor device are disclosed. In an embodiment the optoelectronic semiconductor component has an emission region including a semiconductor layer sequence having a first semiconductor layer, a second semiconductor layer, and an active region arranged between the first semiconductor layer and the second semiconductor layer for generating radiation, and a protection diode region. The semiconductor component has a contact for electrically contacting the semiconductor component externally. The contact has a first contact region that is connected to the emission region in an electrically conductive manner. The contact has further a second contact region that is spaced apart from the first contact region and connected to the protection diode region in an electrically conductive manner. The first contact region and the second contact region can be electrically contacted externally by a mutual end of a connecting line.

公开(公告)号：US09324920B2

公开(公告)日：2016-04-26

申请号：US14348519

申请日：2012-09-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Sabathil ,  Andreas Ploessl ,  Norwin von Malm ,  Alexander Linkov ,  Lutz Hoeppel ,  Christopher Koelper

IPC: H01L33/48 ,  H01L33/20 ,  H01L33/00 ,  H01L31/02 ,  H01L31/0232 ,  H01L33/50 ,  H01L33/58 ,  H01L33/22

CPC classification number: H01L33/48 ,  H01L31/0232 ,  H01L33/20 ,  H01L33/22 ,  H01L33/486 ,  H01L33/507 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip and an optical element. A connecting layer includes a transparent oxide arranged between the semiconductor chip and the optical element. The connecting layer directly adjoins the semiconductor chip and the optical element and fixes the optical element on the semiconductor chip. A method for fabricating an optoelectronic semiconductor component is furthermore specified.

Abstract translation: 光电子半导体部件包括光电半导体芯片和光学元件。 连接层包括布置在半导体芯片和光学元件之间的透明氧化物。 连接层直接邻接半导体芯片和光学元件，并将光学元件固定在半导体芯片上。 此外还规定了制造光电子半导体部件的方法。

公开(公告)号：US20140225149A1

公开(公告)日：2014-08-14

申请号：US14348519

申请日：2012-09-24

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Matthias Sabathil ,  Andreas Ploessl ,  Norwin von Malm ,  Alexander Linkov ,  Lutz Hoeppel ,  Christopher Koelper

IPC: H01L33/48

CPC classification number: H01L33/48 ,  H01L31/0232 ,  H01L33/20 ,  H01L33/22 ,  H01L33/486 ,  H01L33/507 ,  H01L33/58 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

Abstract: An optoelectronic semiconductor component includes an optoelectronic semiconductor chip and an optical element. A connecting layer includes a transparent oxide arranged between the semiconductor chip and the optical element. The connecting layer directly adjoins the semiconductor chip and the optical element and fixes the optical element on the semiconductor chip. A method for fabricating an optoelectronic semiconductor component is furthermore specified.

Abstract translation: 光电子半导体部件包括光电半导体芯片和光学元件。 连接层包括布置在半导体芯片和光学元件之间的透明氧化物。 连接层直接邻接半导体芯片和光学元件，并将光学元件固定在半导体芯片上。 此外还规定了制造光电子半导体部件的方法。

公开(公告)号：US10996482B2

公开(公告)日：2021-05-04

申请号：US15693531

申请日：2017-09-01

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Roland Enzmann ,  Hubert Halbritter ,  Markus Arzberger ,  Andreas Ploessl ,  Roland Schulz ,  Georg Rossbach ,  Bernd Boehm ,  Frank Singer ,  Matthias Sabathil

IPC: G02B27/09 ,  G02B5/18 ,  G02B3/00

Abstract: An optically effective element includes a carrier, a first optically effective structure arranged on a top side of the carrier, and a cover arranged above the first optically effective structure. A method of producing an optically effective element includes providing a carrier, forming a first optically effective structure on a top side of the carrier, and arranging a cover above the top side of the carrier and the first optically effective structure.

公开(公告)号：US20190123251A1

公开(公告)日：2019-04-25

申请号：US16091082

申请日：2017-04-07

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Ingo Neudecker ,  Juergen Moosburger ,  Andreas Ploessl

IPC: H01L33/62 ,  H01L25/075 ,  H01L33/00

Abstract: A light-emitting arrangement is disclosed. In an embodiment a light-emitting arrangement includes a carrier, an electrical contact pad formed on the carrier, an electrically conductive contact film arranged on the contact pad and a light-emitting component having an electrical terminal on a first side, wherein the component is located with the first side on the contact film, wherein the electrical terminal is connected to the contact film in an electrically conductive manner, and wherein the electrical terminal is connected to the contact pad in an electrically conductive manner by way of the electrically conductive contact film.

公开(公告)号：US10046408B2

公开(公告)日：2018-08-14

申请号：US14724682

申请日：2015-05-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Barbara Behr ,  Andreas Ploessl ,  Mathias Wendt ,  Marcus Zenger

IPC: B32B15/00 ,  B23K1/00 ,  F27D3/00 ,  B32B15/01 ,  B32B9/00 ,  B32B7/04 ,  B23K35/26 ,  B23K35/30 ,  B23K35/32 ,  C22C5/02 ,  C22C13/00 ,  C22C5/04 ,  C22C28/00 ,  H01L23/00 ,  H01L33/00

Abstract: A device is specified, said device comprising a first component (1), a second component (2), and a connecting component (3) comprising at least a first region (31) and at least a second region (32). The composition of the first region (31) differs from the composition of the second region (32). The connecting component (3) is arranged between the first component (1) and the second component (2). The connecting component (3) comprises different kinds of metals, the first region (31) of the connecting component (3) comprises a first metal (41), and the concentration of the first metal (41) is greater in the first region (31) than the concentration of the first metal (41) in the second region (32).

公开(公告)号：US20160346857A1

公开(公告)日：2016-12-01

申请号：US14724682

申请日：2015-05-28

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Barbara Behr ,  Andreas Ploessl ,  Mathias Wendt ,  Marcus Zenger

IPC: B23K1/00 ,  B32B15/01 ,  B32B9/00 ,  B32B7/04 ,  C22C28/00 ,  B23K35/30 ,  B23K35/32 ,  C22C5/02 ,  C22C13/00 ,  C22C5/04 ,  F27D3/00 ,  B23K35/26

CPC classification number: B23K1/0016 ,  B23K1/0006 ,  B23K35/26 ,  B23K35/3013 ,  B23K35/322 ,  B32B7/04 ,  B32B9/002 ,  B32B9/005 ,  B32B15/01 ,  B32B15/018 ,  B32B2457/00 ,  C22C5/02 ,  C22C5/04 ,  C22C13/00 ,  C22C28/00 ,  F27D3/00 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L33/0079 ,  H01L2224/2908 ,  H01L2224/29099 ,  H01L2224/83825

Abstract: A device is specified, said device comprising a first component (1), a second component (2), and a connecting component (3) comprising at least a first region (31) and at least a second region (32). The composition of the first region (31) differs from the composition of the second region (32). The connecting component (3) is arranged between the first component (1) and the second component (2). The connecting component (3) comprises different kinds of metals, the first region (31) of the connecting component (3) comprises a first metal (41), and the concentration of the first metal (41) is greater in the first region (31) than the concentration of the first metal (41) in the second region (32).

Abstract translation: 指定设备，所述设备包括第一组件（1），第二组件（2）和至少包括第一区域（31）和至少第二区域（32）的连接组件（3）。 第一区域（31）的组成与第二区域（32）的组成不同。 连接部件（3）布置在第一部件（1）和第二部件（2）之间。 连接部件（3）包括不同种类的金属，连接部件（3）的第一区域（31）包括第一金属（41），并且第一金属（41）的浓度在第一区域 31）比第二区域（32）中的第一金属（41）的浓度高。

公开(公告)号：US20180374996A1

公开(公告)日：2018-12-27

申请号：US15775038

申请日：2016-11-10

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Frank Singer ,  Andreas Ploessl

IPC: H01L33/48 ,  H01L25/13 ,  H01L33/62 ,  H01L33/50

Abstract: An assembly includes a carrier including a glass material, including at least one recess, wherein at least one optoelectronic semiconductor component is arranged in the at least one recess of the carrier, and at least one surface of the semiconductor component connects to the carrier via a melted surface including glass.

公开(公告)号：US10134943B2

公开(公告)日：2018-11-20

申请号：US15532071

申请日：2015-11-30

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Bernd Barchmann ,  Fabian Eigenmann ,  Andreas Ploessl

IPC: H01L21/683 ,  H01L21/78 ,  H01L33/00 ,  H01L31/0224 ,  H01L23/00

Abstract: A method for producing a multiplicity of semiconductor chips (13) is provided, comprising the following steps: —providing a wafer (1) comprising a multiplicity of semiconductor bodies (2), wherein separating lines (9) are arranged between the semiconductor bodies (2), —depositing a contact layer (10) on the wafer (1), wherein the material of the contact layer (10) is chosen from the following group: platinum, rhodium, palladium, gold, and the contact layer (10) has a thickness of between 8 nanometers and 250 nanometers, inclusive, —applying the wafer (1) to a film (11), —at least partially severing the wafer (1) in the vertical direction along the separating lines (9) or introducing fracture nuclei (12) into the wafer (1) along the separating lines (9), and —breaking the wafer (1) along the separating lines (9) or expanding the film (11) such that a spatial separation of the semiconductor chips (13) takes place, wherein the contact layer (10) is also separated. A semiconductor chip, a component and a method for producing the latter are also provided.