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公开(公告)号:US20180023782A1
公开(公告)日:2018-01-25
申请号:US15547789
申请日:2016-01-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: I-Hsin Lin-Lefebvre , Reinhard Streitel , Michael Schmal , Urs Heine , Eric Lefebvre , Markus Keidler
CPC classification number: F21V9/30 , B32B7/12 , B32B15/04 , F21V7/05 , G02F2/02 , G02F2201/34 , G02F2201/346 , G02F2202/28 , H01L33/507 , H01L2933/0041 , H01S5/005
Abstract: A device for converting the wavelength of electromagnetic radiation is disclosed. In an embodiment the device includes a carrier, a conversion layer configured to at least partly convert a wavelength of the electromagnetic radiation and an intermediate layer, wherein the conversion layer is connected to the carrier via the intermediate layer, and wherein the intermediate layer, at least in partial regions, includes a solid layer and a connection layer.
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公开(公告)号:US10520164B2
公开(公告)日:2019-12-31
申请号:US15547789
申请日:2016-01-29
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: I-Hsin Lin-Lefebvre , Reinhard Streitel , Michael Schmal , Urs Heine , Eric Lefebvre , Markus Keidler
Abstract: A device for converting the wavelength of electromagnetic radiation is disclosed. In an embodiment the device includes a carrier, a conversion layer configured to at least partly convert a wavelength of the electromagnetic radiation and an intermediate layer, wherein the conversion layer is connected to the carrier via the intermediate layer, and wherein the intermediate layer, at least in partial regions, includes a solid layer and a connection layer.
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公开(公告)号:US20190319174A1
公开(公告)日:2019-10-17
申请号:US15952194
申请日:2018-04-12
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: I-Hsin Lin-Lefebvre , Reinhard Streitel , Darshan Kundaliya
Abstract: A method for producing an optic device, an optic device and an assembly including such an optic device are disclosed. In an embodiment, the method includes providing an active medium mechanically carried by a carrier body or included in the carrier body; applying an adhesive layer to at least one of the active medium or the carrier body, wherein the adhesive layer comprises at least one organic material and is applied by physical or chemical vapor phase deposition, and wherein a thickness of the adhesive layer is between 20 nm and 0.6 μm inclusive.
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公开(公告)号:US20180226518A1
公开(公告)日:2018-08-09
申请号:US15749656
申请日:2016-08-02
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: Reinhard Streitel , I-Hsin Lin-Lefebvre , Chee Eng Ooi , Ivan Galesic
IPC: H01L31/0232 , H01L31/0203 , H01L33/48 , H01L33/46 , H01L31/14 , H01L33/62 , H01L31/02 , H01L31/0216 , H01L33/60 , H01L33/54
CPC classification number: H01L31/0232 , H01L31/02005 , H01L31/0203 , H01L31/02161 , H01L31/143 , H01L33/405 , H01L33/46 , H01L33/486 , H01L33/54 , H01L33/60 , H01L33/62 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/8592 , H01L2224/92247 , H01L2933/0016 , H01L2933/005 , H01L2924/00014
Abstract: A method of manufacturing an optoelectronic component includes providing a carrier; arranging an ink on an upper side of the carrier; arranging an adhesive on the ink; and arranging the optoelectronic semiconductor chip on the adhesive. An optoelectronic component includes a carrier, an ink arranged on an upper side of the carrier, an adhesive arranged on the ink, and an optoelectronic semiconductor chip arranged on the adhesive.
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公开(公告)号:US20180182934A1
公开(公告)日:2018-06-28
申请号:US15389213
申请日:2016-12-22
Applicant: OSRAM Opto Semiconductors GmbH
Inventor: I-Hsin Lin-Lefebvre , Reinhard Streitel , Darshan Kundaliya , Tobias Gebuhr
CPC classification number: H01L33/508 , H01L33/502 , H01L33/505 , H01L33/507 , H01L33/54 , H01L33/62 , H01L2224/16245 , H01L2224/48091 , H01L2933/0041 , H01L2933/005 , H01L2933/0066 , H01L2924/00014
Abstract: A light emitting unit includes a light emitting semiconductor chip and a wavelength converter for the light of the semiconductor chip. The wavelength converter has a substrate with a first surface. The first surface includes a rough surface with recesses. The wavelength converter has a conversion layer that is arranged on the first surface of the substrate. The conversion layer has luminescent materials. A connecting layer is arranged between the wavelength converter and a light emitting surface of the light emitting semiconductor chip.
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