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    Passivation of sidewalls of a word line stack
    1.
    发明授权
    Passivation of sidewalls of a word line stack 有权
    钝化字线堆叠的侧壁

    公开(公告)号：US06198144B1

    公开(公告)日：2001-03-06

    申请号：US09376232

    申请日：1999-08-18

    申请人： Pai-Hung Pan ,  Martin C. Roberts ,  Gurtei S. Sandhu ,  Weimin Li ,  Christopher W. Hill ,  Vishnu K. Agarwal

    发明人： Pai-Hung Pan ,  Martin C. Roberts ,  Gurtei S. Sandhu ,  Weimin Li ,  Christopher W. Hill ,  Vishnu K. Agarwal

    IPC分类号： H01L213205

    CPC分类号： H01L21/28167 ,  H01L21/28061 ,  H01L21/28176 ,  H01L27/10873 ,  H01L29/6653 ,  H01L29/66545

    摘要： A method of fabricating an integrated circuit on a wafer includes forming a gate electrode stack over a gate dielectric and forming nitride spacers along sidewalls of the gate electrode stack other than along lowermost portions of the sidewalls. Subsequently, a reoxidation process is performed with respect to the gate dielectric. By providing the nitride spacers along exposed surfaces of conductive barrier and metal layers of the word line stack, those surfaces can be passivated, thereby preventing or reducing the conversion of those layers to non-conductive compounds during the reoxidation process. At the same time, the nitride spacers can be formed so that they do not interfere with the subsequent reoxidation of the gate dielectric. An integrated circuit having a gate electrode stack with nitride spacers extending along sidewalls of the gate electrode stack other than along lowermost portions of the sidewalls is also disclosed.

    摘要翻译： 在晶片上制造集成电路的方法包括在栅极电介质上形成栅极电极堆叠，并且沿着侧壁的最下部分沿着栅电极堆叠的侧壁形成氮化物间隔物。 随后，对栅极电介质进行再氧化处理。 通过在字线堆叠的导电阻挡层和金属层的暴露表面上设置氮化物间隔物，可以钝化那些表面，从而在再氧化过程期间防止或减少这些层向非导电化合物的转化。 同时，可以形成氮化物间隔物，使得它们不干扰栅极电介质的随后的再氧化。 还公开了具有栅极电极堆叠的集成电路，其具有沿着侧壁的侧壁延伸的氮化物间隔物，而不是沿着侧壁的最下部分延伸。

    Method for forming a selective contact and local interconnect in situ and semiconductor devices carrying the same
    2.
    发明授权
    Method for forming a selective contact and local interconnect in situ and semiconductor devices carrying the same 失效
    用于形成选择性接触和局部互连原位以及携带其的半导体器件的方法

    公开(公告)号：US06372643B1

    公开(公告)日：2002-04-16

    申请号：US09056309

    申请日：1998-04-07

    申请人： Christopher W. Hill ,  Weimin Li ,  Gurtej S. Sandhu

    发明人： Christopher W. Hill ,  Weimin Li ,  Gurtej S. Sandhu

    IPC分类号： H01L2144

    CPC分类号： H01L21/28568 ,  C23C16/0272 ,  C23C16/44 ,  H01L21/28518 ,  H01L21/28556 ,  H01L21/28562 ,  H01L21/76877

    摘要： A process for the in situ formation of a selective contact and a local interconnect on a semiconductor substrate. The exposed semiconductor substrate regions of a semiconductor device structure may be treated in a plasma to enhance the adhesiveness of a selective contact thereto. The semiconductor device structure is positioned within a reaction chamber, wherein a selective contact is deposited onto the exposed semiconductor substrate regions, Any residual selective contact material may be removed from oxide surfaces either intermediately or after selective contact deposition. While the semiconductor device remains in the reaction chamber, a local interconnect is deposited over the semiconductor device structure. The local interconnect may then be patterned. Subsequent layers may be deposited over the local interconnect. The present invention also includes semiconductor device structures formed by the inventive process.

    摘要翻译： 用于在半导体衬底上原位形成选择性接触和局部互连的方法。 可以在等离子体中处理半导体器件结构的暴露的半导体衬底区域以增强与其的选择性接触的粘合性。 半导体器件结构位于反应室内，其中选择性接触沉积在暴露的半导体衬底区域上。任何残留的选择性接触材料可以在中间或选择性接触沉积之后从氧化物表面去除。 当半导体器件保留在反应室中时，在半导体器件结构上沉积局部互连。 然后可以对局部互连进行图案化。 随后的层可以沉积在局部互连上。 本发明还包括通过本发明方法形成的半导体器件结构。

    Method for forming a selective contact and local interconnect in situ
    3.
    发明授权
    Method for forming a selective contact and local interconnect in situ 有权
    在原位形成选择性接触和局部互连的方法

    公开(公告)号：US07858518B2

    公开(公告)日：2010-12-28

    申请号：US10067410

    申请日：2002-02-04

    申请人： Christopher W. Hill ,  Weimin Li ,  Gurtej S. Sandhu

    发明人： Christopher W. Hill ,  Weimin Li ,  Gurtej S. Sandhu

    IPC分类号： H01L21/4763

    CPC分类号： H01L21/76895 ,  H01L21/28518 ,  H01L21/28562 ,  H01L21/28568

    摘要： A process for the in situ formation of a selective contact and a local interconnect on a semiconductor substrate. The exposed semiconductor substrate regions of a semiconductor device structure may be treated in a plasma to enhance the adhesiveness of a selective contact thereto. The semiconductor device structure is positioned within a reaction chamber, wherein a selective contact is deposited onto the exposed semiconductor substrate regions. Any residual selective contact material may be removed from oxide surfaces either intermediately or after selective contact deposition. While the semiconductor device remains in the reaction chamber, a local interconnect is deposited over the semiconductor device structure. The local interconnect may then be patterned. Subsequent layers may be deposited over the local interconnect. The present invention also includes semiconductor device structures formed by the inventive process.

    摘要翻译： 用于在半导体衬底上原位形成选择性接触和局部互连的方法。 可以在等离子体中处理半导体器件结构的暴露的半导体衬底区域以增强与其的选择性接触的粘合性。 半导体器件结构位于反应室内，其中选择性接触沉积在暴露的半导体衬底区域上。 任何残留的选择性接触材料可以在中间或选择性接触沉积之后从氧化物表面去除。 当半导体器件保留在反应室中时，在半导体器件结构上沉积局部互连。 然后可以对局部互连进行图案化。 随后的层可以沉积在局部互连上。 本发明还包括通过本发明方法形成的半导体器件结构。

    Method of removing residual contaminants from an environment
    4.
    发明授权
    Method of removing residual contaminants from an environment 失效
    从环境中清除残留污染物的方法

    公开(公告)号：US07611971B2

    公开(公告)日：2009-11-03

    申请号：US11472009

    申请日：2006-06-21

    申请人： Demetrius Sarigiannis ,  Cem Basceri ,  Christopher W. Hill ,  Garo J. Derderian

    发明人： Demetrius Sarigiannis ,  Cem Basceri ,  Christopher W. Hill ,  Garo J. Derderian

    IPC分类号： H01L21/00

    CPC分类号： C23C16/4401 ,  C23C14/564

    摘要： A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting the aluminum compound with the halogenated material to form a gaseous reaction product, and removing the gaseous reaction product from the environment. The aluminum compound may be a trialkylaluminum compound, an alane, an alkylaluminum hydride, an alkylaluminum halide, an alkylaluminum sesquihalide, or an aluminum sesquihalide. The aluminum compound may alternatively form a solid aluminum product, which is deposited on a surface associated with the halogen-containing environment or onto a semiconductor disposed therewithin. The halogenated material is incorporated into the solid aluminum product, forming an inert film within which the halogenated material is trapped.

    摘要翻译： 一种在含卤素环境中减少卤化物质的量的方法。 该方法包括将铝化合物引入含卤素的环境中，使铝化合物与卤化物反应形成气态反应产物，并从气氛中除去气态反应产物。 铝化合物可以是三烷基铝化合物，烷烃，烷基铝氢化物，烷基铝卤化物，烷基铝倍半卤化物或倍半卤化铝。 铝化合物可替代地形成固体铝产物，其沉积在与含卤素环境相关的表面上或其上设置的半导体上。 将卤化物掺入固体铝产品中，形成惰性膜，卤化物质被捕获在该惰性膜中。

    Semiconductor constructions, and methods of forming dielectric materials
    7.
    发明申请
    Semiconductor constructions, and methods of forming dielectric materials 有权
    半导体结构以及形成电介质材料的方法

    公开(公告)号：US20080050928A1

    公开(公告)日：2008-02-28

    申请号：US11510025

    申请日：2006-08-25

    申请人： Christopher W. Hill

    发明人： Christopher W. Hill

    IPC分类号： H01L21/31 ,  H01L29/94

    CPC分类号： H01L21/3141 ,  C23C16/401 ,  C23C16/45527 ,  C23C16/45529 ,  H01L21/02126 ,  H01L21/02145 ,  H01L21/0228 ,  H01L21/02312 ,  H01L21/31612 ,  H01L21/3162 ,  H01L21/76224

    摘要： Some embodiments include methods of forming dielectric materials associated with semiconductor constructions. A semiconductor substrate surface having two different compositions may be exposed to a first silanol, then to organoaluminum to form a monolayer, and finally to a second silanol to form a dielectric material containing aluminum from the organoaluminum together with silicon and oxygen from the second silanol. Alternatively, or additionally, an organoaluminum monolayer may be formed across a semiconductor substrate, and then exposed to silanol within a deposition chamber, with the silanol being provided in two doses. Initially, a first dose of the silanol is injected the chamber, and then the first dose is flushed from the chamber to remove substantially all unreacted silanol from within the chamber. Subsequently, the second dose of silanol is injected into the chamber. Some embodiments include semiconductor constructions.

    摘要翻译： 一些实施例包括形成与半导体结构相关的介电材料的方法。 可以将具有两种不同组成的半导体衬底表面暴露于第一硅烷醇，然后暴露于有机铝以形成单层，最后暴露于第二硅烷醇，以形成含有有机铝的电介质材料以及来自第二硅烷醇的硅和氧。 或者或另外，可以在半导体衬底上形成有机铝单层，然后在沉积室内暴露于硅烷醇，硅烷醇以两个剂量提供。 首先，将第一剂量的硅烷醇注入腔室，然后将第一剂量从腔室冲洗以从腔室内基本上除去所有未反应的硅烷醇。 随后，将第二剂量的硅烷醇注入腔室。 一些实施例包括半导体结构。

    Method of removing residual contaminants from an environment
    8.
    发明授权
    Method of removing residual contaminants from an environment 有权
    从环境中清除残留污染物的方法

    公开(公告)号：US07247561B2

    公开(公告)日：2007-07-24

    申请号：US10734525

    申请日：2003-12-11

    申请人： Demetrius Sarigiannis ,  Cem Basceri ,  Christopher W. Hill ,  Garo J. Derderian

    发明人： Demetrius Sarigiannis ,  Cem Basceri ,  Christopher W. Hill ,  Garo J. Derderian

    IPC分类号： H01L21/44

    CPC分类号： C23C16/4401 ,  C23C14/564

    摘要： A method of reducing the amount of halogenated materials in a halogen-containing environment. The method comprises introducing an aluminum compound into the halogen-containing environment, reacting the aluminum compound with the halogenated material to form a gaseous reaction product, and removing the gaseous reaction product from the environment. The aluminum compound may be a trialkylaluminum compound, an alane, an alkylaluminum hydride, an alkylaluminum halide, an alkylaluminum sesquihalide, or an aluminum sesquihalide. The aluminum compound may alternatively form a solid aluminum product, which is deposited on a surface associated with the halogen-containing environment or onto a semiconductor disposed therewithin. The halogenated material is incorporated into the solid aluminum product, forming an inert film within which the halogenated material is trapped.

    摘要翻译： 一种在含卤素环境中减少卤化物质的量的方法。 该方法包括将铝化合物引入含卤素的环境中，使铝化合物与卤化物反应形成气态反应产物，并从气氛中除去气态反应产物。 铝化合物可以是三烷基铝化合物，烷烃，烷基铝氢化物，烷基铝卤化物，烷基铝倍半卤化物或倍半卤化铝。 铝化合物可替代地形成固体铝产物，其沉积在与含卤素环境相关的表面上或其上设置的半导体上。 将卤化物掺入固体铝产品中，形成惰性膜，卤化物质被捕获在该惰性膜中。

    Methods of forming trench isolation and methods of forming floating gate transistors
    10.
    发明授权
    Methods of forming trench isolation and methods of forming floating gate transistors 有权
    形成沟槽隔离的方法和形成浮栅晶体管的方法

    公开(公告)号：US07846812B2

    公开(公告)日：2010-12-07

    申请号：US11958551

    申请日：2007-12-18

    申请人： Christopher W. Hill

    发明人： Christopher W. Hill

    IPC分类号： H01L21/76 ,  H01L21/336 ,  H01L21/302 ,  H01L21/461 ,  H01L21/033

    CPC分类号： H01L21/76229 ,  H01L27/115 ,  H01L27/11521

    摘要： A method of forming trench isolation includes etching first trench lines into semiconductive material of a semiconductor substrate. First isolation material is formed within the first trench lines within the semiconductive material. After forming the first isolation material within the first trench lines, second trench lines are etched into semiconductive material of the substrate between the first trench lines such that the first trench lines and second trench lines alternate. Second isolation material is formed within the second trench lines within the semiconductive material. Alternate and additional aspects are contemplated.

    摘要翻译： 形成沟槽隔离的方法包括将第一沟槽线蚀刻成半导体衬底的半导体材料。 第一隔离材料形成在半导体材料内的第一沟槽线内。 在第一沟槽线中形成第一隔离材料之后，第二沟槽线被蚀刻到第一沟槽线之间的衬底的半导体材料，使得第一沟槽线和第二沟槽线交替。 第二隔离材料形成在半导体材料内的第二沟槽线内。 考虑了替代和附加方面。