FINE PARTICLE PRODUCING APPARATUS AND FINE PARTICLE PRODUCING METHOD

    公开(公告)号:US20190247822A1

    公开(公告)日:2019-08-15

    申请号:US16255135

    申请日:2019-01-23

    Abstract: A fine particle producing apparatus includes a reaction chamber extending vertically from the lower side to the upper side; a material supply device which is connected to a central part on one end side of the vertically lower side inside the reaction chamber and supplies a material particle into the reaction chamber of a vertically upper side from a material supply port; a first electrode arrangement region which protrudes in an inward radial direction to be disposed on an inner peripheral wall in the reaction chamber which is vertically above the material supply device, and includes a plurality of lower electrodes to which AC power is applied; a second electrode arrangement region which protrudes in an inward radial direction to be disposed on an inner peripheral wall in the reaction chamber which is vertically above the first electrode arrangement region, and includes a plurality of upper electrodes to which AC power is applied; a collector which is connected to the other end side in the reaction chamber of the vertically upper side so as to collect fine particles; a power source which is capable of changing a frequency of AC power applied to at least one of the lower electrode included in the first electrode arrangement region and the upper electrode included in the second electrode arrangement region; and a controller which sets the frequency of AC power applied to the lower electrode as a frequency equal to or higher than a frequency of AC power applied to the upper electrode, in which a fine particle is generated from the material particle by generating arc discharge by the lower electrode and the upper electrode, and generating plasma in the reaction chamber.

    APPARATUS FOR PRODUCING FINE PARTICLES AND METHOD FOR PRODUCING FINE PARTICLES

    公开(公告)号:US20190151955A1

    公开(公告)日:2019-05-23

    申请号:US16251040

    申请日:2019-01-17

    Abstract: An apparatus and a method for producing fine particles capable of increasing the production and producing fine particles at low costs by feeding a large quantity of material efficiently into the plasma. The apparatus includes a vacuum chamber, a material feeding device connected to the vacuum chamber and feeding material particles into the vacuum chamber from material feeding ports, a plurality of electrodes connected to the vacuum chamber, tip ends of which protrude into the vacuum chamber to generate plasma and a collecting device connected to the vacuum chamber and collecting fine particles, which generates discharge inside the vacuum chamber and produces the fine particles from the material, in which the material feeding ports of the material feeding device are arranged in a lower side than the plural electrodes in the vertical direction in the vacuum chamber.

    DISPLACEMENT SENSOR, AND DISPLACEMENT MEASUREMENT SYSTEM USING DISPLACEMENT SENSOR

    公开(公告)号:US20240019242A1

    公开(公告)日:2024-01-18

    申请号:US18474318

    申请日:2023-09-26

    CPC classification number: G01B11/16 G01L1/247

    Abstract: A displacement sensor includes a first emission particles layer provided to be contactable with a measurement object, and in which first emission particles that emit light at a first wavelength by excitation energy are distributed over at least a one-dimensional extent, a second emission particles layer in which second emission particles that emit light at a second wavelength different from the first wavelength by the excitation energy are distributed over the above one-dimensional extent, and a spacer layer that separates the first emission particles layer and the second emission particles layer in a direction intersecting the above one-dimensional extent, and which includes an excitation energy absorbent that absorbs the excitation energy.

    SPUTTERING METHOD
    10.
    发明申请
    SPUTTERING METHOD 审中-公开

    公开(公告)号:US20190169738A1

    公开(公告)日:2019-06-06

    申请号:US16205166

    申请日:2018-11-29

    Abstract: To provide a sputtering method as a reactive sputtering method of forming a thin film by allowing a target material to react with a gas, in which film deposition conditions are narrowed down from an existing period of nitrogen radicals by focusing on a nitriding process in thin-film forming processes when the thin film is formed by pulsing a waveform of electric current from a DC power supply at the time of generating plasma and applying the electric current to the target material.

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