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公开(公告)号:US08207063B2
公开(公告)日:2012-06-26
申请号:US11627525
申请日:2007-01-26
申请人: Peter J. Cowdery-Corvan , David H. Levy , Shelby F. Nelson , Diane C. Freeman , Thomas D. Pawlik
发明人: Peter J. Cowdery-Corvan , David H. Levy , Shelby F. Nelson , Diane C. Freeman , Thomas D. Pawlik
IPC分类号: H01L21/20
CPC分类号: C23C16/407 , B33Y80/00 , C23C16/45551 , C23C16/545
摘要: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.
摘要翻译: 本发明涉及一种制造用于晶体管的氧化锌基薄膜半导体的方法,其包括在衬底上的薄膜沉积,包括提供多种气态材料,其包括至少第一,第二和第三气态材料 其中所述第一气态材料是含锌挥发性材料,并且所述第二气态材料与其反应,使得当所述第一或第二气态材料中的一种位于所述基材的表面上时,所述第一或第二气态材料中的另一种将反应 以在衬底上沉积一层材料,并且其中第三气态材料相对于与第一或第二气态材料的反应是惰性的。
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公开(公告)号:US20090081826A1
公开(公告)日:2009-03-26
申请号:US11861455
申请日:2007-09-26
申请人: Peter J. Cowdery-Corvan , David H. Levy , Thomas D. Pawlik , Diane C. Freeman , Shelby F. Nelson
发明人: Peter J. Cowdery-Corvan , David H. Levy , Thomas D. Pawlik , Diane C. Freeman , Shelby F. Nelson
IPC分类号: H01L21/36
CPC分类号: H01L21/02576 , B33Y80/00 , C23C16/407 , C23C16/45504 , C23C16/45544 , C23C16/45551 , C23C16/45574 , H01L21/02554 , H01L21/02565 , H01L21/0262
摘要: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.
摘要翻译: 本发明涉及一种制造用于晶体管的氧化锌基薄膜半导体的方法,其包括在衬底上的薄膜沉积,包括提供多种包含第一,第二和第三气态材料的气态材料,其中 第一气体材料是含锌挥发性材料,第二气态材料与其反应,使得当第一或第二气态材料之一位于基材表面上时,第一或第二气态材料中的另一种将反应沉积 衬底上的一层材料,其中所述第三气态材料是惰性的,并且其中将挥发性含铟化合物引入到所述第一反应性气态材料或补充气态材料中。
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公开(公告)号:US07972898B2
公开(公告)日:2011-07-05
申请号:US11861455
申请日:2007-09-26
申请人: Peter J. Cowdery-Corvan , David H. Levy , Thomas D. Pawlik , Diane C. Freeman , Shelby F. Nelson
发明人: Peter J. Cowdery-Corvan , David H. Levy , Thomas D. Pawlik , Diane C. Freeman , Shelby F. Nelson
IPC分类号: C22B19/00 , C03C17/245
CPC分类号: H01L21/02576 , B33Y80/00 , C23C16/407 , C23C16/45504 , C23C16/45544 , C23C16/45551 , C23C16/45574 , H01L21/02554 , H01L21/02565 , H01L21/0262
摘要: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate, wherein the third gaseous material is inert and wherein a volatile indium-containing compound is introduced into the first reactive gaseous material or a supplemental gaseous material.
摘要翻译: 本发明涉及一种制造用于晶体管的氧化锌基薄膜半导体的方法,其包括在衬底上的薄膜沉积,包括提供多种包含第一,第二和第三气态材料的气态材料,其中 第一气体材料是含锌挥发性材料,第二气态材料与其反应,使得当第一或第二气态材料之一位于基材表面上时,第一或第二气态材料中的另一种将反应沉积 衬底上的一层材料,其中所述第三气态材料是惰性的,并且其中将挥发性含铟化合物引入到所述第一反应性气态材料或补充气态材料中。
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公开(公告)号:US20080182358A1
公开(公告)日:2008-07-31
申请号:US11627525
申请日:2007-01-26
申请人: Peter J. Cowdery-Corvan , David H. Levy , Shelby F. Nelson , Diane C. Freeman , Thomas D. Pawlik
发明人: Peter J. Cowdery-Corvan , David H. Levy , Shelby F. Nelson , Diane C. Freeman , Thomas D. Pawlik
IPC分类号: H01L21/20
CPC分类号: C23C16/407 , B33Y80/00 , C23C16/45551 , C23C16/545
摘要: The present invention relates to a process of making a zinc-oxide-based thin film semiconductor, for use in a transistor, comprising thin film deposition onto a substrate comprising providing a plurality of gaseous materials comprising at least first, second, and third gaseous materials, wherein the first gaseous material is a zinc-containing volatile material and the second gaseous material is reactive therewith such that when one of the first or second gaseous materials are on the surface of the substrate the other of the first or second gaseous materials will react to deposit a layer of material on the substrate and wherein the third gaseous material is inert with respect to reacting with the first or second gaseous materials.
摘要翻译: 本发明涉及一种制造用于晶体管的氧化锌基薄膜半导体的方法,其包括在衬底上的薄膜沉积,包括提供多种气态材料,其包括至少第一,第二和第三气态材料 其中所述第一气态材料是含锌挥发性材料,并且所述第二气态材料与其反应,使得当所述第一或第二气态材料中的一种位于所述基材的表面上时,所述第一或第二气态材料中的另一种将反应 以在衬底上沉积一层材料,并且其中第三气态材料相对于与第一或第二气态材料的反应是惰性的。
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公开(公告)号:US20090081842A1
公开(公告)日:2009-03-26
申请号:US11861491
申请日:2007-09-26
申请人: Shelby F. Nelson , David H. Levy , Lyn M. Irving , Peter J. Cowdery-Corvan , Diane C. Freeman , Carolyn R. Ellinger
发明人: Shelby F. Nelson , David H. Levy , Lyn M. Irving , Peter J. Cowdery-Corvan , Diane C. Freeman , Carolyn R. Ellinger
IPC分类号: H01L21/336
CPC分类号: H01L27/1259 , B33Y80/00 , C23C16/407 , C23C16/45551 , C23C16/45595 , C23C16/545 , H01L27/1214 , H01L27/1225
摘要: The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.
摘要翻译: 本发明涉及薄膜电子元件和薄膜晶体管,环境屏障层,电容器,绝缘子和总线线路的制造方法,其中大部分或全部层通过大气原子层沉积工艺制成。
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公开(公告)号:US07851380B2
公开(公告)日:2010-12-14
申请号:US11861491
申请日:2007-09-26
申请人: Shelby F. Nelson , David H. Levy , Lyn M. Irving , Peter J. Cowdery-Corvan , Diane C. Freeman , Carolyn R. Ellinger
发明人: Shelby F. Nelson , David H. Levy , Lyn M. Irving , Peter J. Cowdery-Corvan , Diane C. Freeman , Carolyn R. Ellinger
IPC分类号: H01L21/31
CPC分类号: H01L27/1259 , B33Y80/00 , C23C16/407 , C23C16/45551 , C23C16/45595 , C23C16/545 , H01L27/1214 , H01L27/1225
摘要: The present invention relates to a process of making thin film electronic components and devices, such as thin film transistors, environmental barrier layers, capacitors, insulators and bus lines, where most or all of the layers are made by an atmospheric atomic layer deposition process.
摘要翻译: 本发明涉及薄膜电子元件和薄膜晶体管,环境屏障层,电容器,绝缘子和总线线路的制造方法,其中大部分或全部层通过大气原子层沉积工艺制成。
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公开(公告)号:US08129098B2
公开(公告)日:2012-03-06
申请号:US11986169
申请日:2007-11-20
IPC分类号: G03F7/20
CPC分类号: H01L27/1288 , G03F7/0005 , G03F7/2022 , H01L27/1214 , H01L27/1225 , H01L27/1292 , H01L29/66765 , H01L29/7869
摘要: The invention relates to a process for forming a structure comprising (a) providing a transparent support; (b) forming a color mask on a first side of the transparent support; (c) applying a first layer comprising a deposition inhibitor material that is sensitive to visible light; (d) patterning the first layer by exposing the first layer through the color mask with visible light to form a first pattern and developing the deposition inhibitor material to provide selected areas of the first layer effectively not having the deposition inhibitor material; and (e) depositing a second layer of functional material over the transparent support; wherein the second layer of functional material is substantially deposited only in selected areas over the transparent support not having the deposition inhibitor material.
摘要翻译: 本发明涉及一种用于形成结构的方法,包括(a)提供透明支撑体; (b)在所述透明支撑体的第一面上形成彩色掩模; (c)施加包含对可见光敏感的沉积抑制剂材料的第一层; (d)通过用可见光将所述第一层暴露于所述彩色掩模以形成第一图案并使所述沉积抑制剂材料显影以提供所述第一层的选定区域,而不具有所述沉积抑制剂材料; 和(e)在所述透明支撑体上沉积第二层功能材料; 其中第二层功能材料仅在不具有沉积抑制剂材料的透明支撑体上基本上沉积在选定的区域中。
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公开(公告)号:US08030212B2
公开(公告)日:2011-10-04
申请号:US11861658
申请日:2007-09-26
IPC分类号: H01L21/44
CPC分类号: C23C16/45551 , C23C16/042 , H01L21/02175 , H01L21/02178 , H01L21/0228 , H01L21/02304 , H01L21/3141 , H01L21/31616 , H01L51/0004
摘要: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a deposition inhibitor material to the substrate, wherein the deposition inhibitor material is an organic compound or polymer; and patterning the deposition inhibitor material either after step (b) or simultaneously with applying the deposition inhibitor material to provide selected areas of the substrate effectively not having the deposition inhibitor material. An inorganic thin film material is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译: 一种用于形成图案化薄膜的原子层沉积工艺,包括提供衬底,向衬底施加沉积抑制剂材料,其中所述沉积抑制剂材料是有机化合物或聚合物; 以及在步骤(b)之后图案化沉积抑制剂材料或同时施加沉积抑制剂材料以提供有效地不具有沉积抑制剂材料的基底的选定区域。 无机薄膜材料仅基本上沉积在不具有沉积抑制剂材料的基板的选定区域中。
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公开(公告)号:US20090130608A1
公开(公告)日:2009-05-21
申请号:US11942780
申请日:2007-11-20
IPC分类号: G03F7/26
CPC分类号: G03F7/0757 , G03F7/0754 , G03F7/40
摘要: An atomic-layer-deposition process for forming a patterned thin film comprising providing a substrate, applying a photopatternable deposition inhibitor material to the substrate, wherein the deposition inhibitor material comprises an organosiloxane compound; and patterning the deposition inhibitor material. The thin film is substantially deposited only in the selected areas of the substrate not having the deposition inhibitor material.
摘要翻译: 一种用于形成图案化薄膜的原子层沉积工艺,包括提供衬底,将光可图案化沉积抑制剂材料施加到衬底上,其中所述沉积抑制剂材料包括有机硅氧烷化合物; 并图案化沉积抑制剂材料。 薄膜仅基本上沉积在不具有沉积抑制剂材料的基底的选定区域中。
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公开(公告)号:US20090081883A1
公开(公告)日:2009-03-26
申请号:US11861618
申请日:2007-09-26
IPC分类号: H01L21/469
CPC分类号: C23C16/30 , B05D1/60 , B05D2252/02 , C23C16/45551 , C23C16/45553 , C23C16/545
摘要: A process of making an organic thin film on a substrate by atomic layer deposition is disclosed, the process comprising simultaneously directing a series of gas flows along substantially parallel elongated channels, and wherein the series of gas flows comprises, in order, at least a first reactive gaseous material, an inert purge gas, and a second reactive gaseous material, optionally repeated a plurality of times, wherein the first reactive gaseous material is capable of reacting with a substrate surface treated with the second reactive gaseous material wherein the first reactive gaseous material, the second reactive gaseous material or both is a volatile organic compound. The process is carried out substantially at or above atmospheric pressure and at a temperature under 250° C., during deposition of the organic thin film.
摘要翻译: 公开了通过原子层沉积在衬底上制造有机薄膜的方法,该方法包括同时引导一系列沿着大致平行的细长通道的气流,并且其中一系列气流依次包括至少第一 反应性气态材料,惰性吹扫气体和第二反应性气体材料,任选地重复多次,其中第一反应性气体材料能够与用第二反应性气态材料处理的基底表面反应,其中第一反应性气态材料 ,第二反应性气体物质或两者都是挥发性有机化合物。 在有机薄膜的沉积期间,该过程基本上在大气压以上且在250℃以下的温度下进行。
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