公开(公告)号：US20250149410A1

公开(公告)日：2025-05-08

申请号：US18937178

申请日：2024-11-05

Applicant: Renesas Electronics Corporation

Inventor： Seiya ISOZAKI

IPC: H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L23/00 ,  H01L23/31

Abstract: A method of manufacturing a semiconductor device includes: a step of forming a sealing body, and a step of irradiating a laser light to a region, which is covering a part of each of the plurality of leads, of the sealing body. Each of the plurality of leads of a lead frame LF includes a first portion having a first upper surface and a first lower surface opposite the first upper surface, and a second portion having a thickness smaller than the first portion. The second portion has a second upper surface, and a second lower surface opposite the second upper surface. In the step of irradiating the laser light, the second lower surface is exposed from the sealing body by selectively irradiating the region with the laser light.

公开(公告)号：US20180277511A1

公开(公告)日：2018-09-27

申请号：US15900919

申请日：2018-02-21

Applicant: Renesas Electronics Corporation

Inventor： Yuki YAGYU ,  Seiya ISOZAKI

IPC: H01L23/00 ,  H01L21/56

CPC classification number: H01L24/85 ,  H01L21/56 ,  H01L21/561 ,  H01L23/293 ,  H01L23/3128 ,  H01L24/05 ,  H01L24/48 ,  H01L27/11517 ,  H01L29/792 ,  H01L2224/023 ,  H01L2224/04042 ,  H01L2224/05084 ,  H01L2224/05147 ,  H01L2224/05155 ,  H01L2224/05164 ,  H01L2224/05166 ,  H01L2224/05171 ,  H01L2224/05644 ,  H01L2224/45147 ,  H01L2224/4845

Abstract: To provide a semiconductor device having improved reliability. A method of manufacturing the semiconductor device includes connecting a wire comprised of copper with a conductive layer formed on the pad electrode of a semiconductor chip, heat treating the semiconductor chip, and then sealing the semiconductor chip and the wire with a resin.

公开(公告)号：US20210057361A1

公开(公告)日：2021-02-25

申请号：US16910225

申请日：2020-06-24

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Seiya ISOZAKI ,  Tatsuya KOBAYASHI ,  Kota JINNO

IPC: H01L23/00 ,  H01L21/66 ,  H01L23/31 ,  H01L23/495 ,  H01L21/48 ,  H01L21/56 ,  H01L21/78

Abstract: A semiconductor device comprising: bonding pads formed in the first wiring layer; and first wirings and a second wiring formed in a second wiring layer provided one layer below the first wiring layer. Here, a power supply potential and a reference potential are to be supplied to each first wiring and the second wiring, respectively. Also, in transparent plan view, each of the first wirings is arranged next to each other, and is arranged at a first position of the second wiring layer, that is overlapped with the bonding region of the first bonding pad. Also, in transparent plan view, the second wiring is arranged at a second position of the second wiring layer, that is overlapped with a first region located between the first bonding pad and the second bonding pad. Further, a width of each first wiring is less than a width of the second wiring.

公开(公告)号：US20190295930A1

公开(公告)日：2019-09-26

申请号：US16281619

申请日：2019-02-21

Applicant: RENESAS ELECTRONICS CORPORATION

Inventor： Yoshinori DEGUCHI ,  Iwao NATORI ,  Seiya ISOZAKI

IPC: H01L23/495 ,  H01L23/532 ,  H01L23/00

Abstract: A pad is formed on an interlayer insulating film, art insulating film is formed on the interlayer insulating film to cover the pad, and an opening portion exposing a part of the pad is formed in the insulating film. A metal film electrically connected to the pad is formed on the pad exposed from the opening portion and on the insulating film. The metal film integrally includes a first portion on the pad exposed from the opening portion and a second portion on the insulating film. An upper surface of the metal film has a wire bonding region for bonding a wire to the metal film and a probe contact region for bringing the probe into contact with the metal film, the wire bonding region is located on the first portion of the metal film, and the probe contact region is located on the second portion of the metal film.

公开(公告)号：US20170287868A1

公开(公告)日：2017-10-05

申请号：US15421461

申请日：2017-02-01

Applicant: Renesas Electronics Corporation

Inventor： Seiya ISOZAKI ,  Takashi MORIYAMA ,  Takehiko MAEDA

IPC: H01L23/00 ,  H01L21/48 ,  H01L23/495

CPC classification number: H01L24/43 ,  H01L21/4853 ,  H01L23/3171 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/33 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L24/92 ,  H01L2224/04042 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/32225 ,  H01L2224/3303 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/83192 ,  H01L2224/8385 ,  H01L2224/85181 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85455 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01029 ,  H01L2924/01046 ,  H01L2924/04941 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00015 ,  H01L2224/29099 ,  H01L2224/32245 ,  H01L2924/00

Abstract: A pad formed in a semiconductor chip is formed such that a thickness of an aluminum film in a wire bonding portion is smaller than that of an aluminum film in a peripheral portion covered with a protective film. On the other hand, a thickness of a wiring formed in the same step as the pad is larger than that of the pad in the wire bonding portion. The main conductive film of the pad in the wire bonding portion is comprised of only one layer of a first aluminum film, while the main conductive film of the wiring is comprised of at least two layers of aluminum films (the first aluminum film and a second aluminum film) in any region of the wiring.