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    Semiconductor Device
    3.
    发明申请
    Semiconductor Device 有权
    半导体器件

    公开(公告)号：US20150115342A1

    公开(公告)日：2015-04-30

    申请号：US14517657

    申请日：2014-10-17

    Applicant: Renesas Electronics Corporation

    Inventor： Yoshinori KAYA ,  Yasushi NAKAHARA ,  Azuma ARAYA ,  Ryo KANDA ,  Tomonobu KURIHARA ,  Tetsu TODA

    IPC: H01L27/06 ,  H01L29/06

    CPC classification number: H02M1/088 ,  H01L27/0285 ,  H01L27/0292 ,  H01L27/0296 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0642 ,  H01L29/0847 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/1079 ,  H01L29/405 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835 ,  H01L29/7838 ,  H03K2017/6875 ,  H03K2217/0081

    Abstract: Provided is a semiconductor device including a substrate of a first conductivity type, a first circuit region, a separation region, a second circuit region, and a rectifying element. The rectifying element has a second conductivity type layer, a first high concentration second conductivity type region, a second high concentration second conductivity type region, an element isolation film, a first insulation layer, and a first conductive film. A first contact is coupled to the first high concentration second conductivity type region, and a second contact is coupled to the second high concentration second conductivity type region. A third contact is coupled to the first conductive film. The first contact, the second contact and the third contact are separated from each other.

    Abstract translation: 提供了包括第一导电类型的衬底，第一电路区域，分离区域，第二电路区域和整流元件的半导体器件。 整流元件具有第二导电类型层，第一高浓度第二导电类型区域，第二高浓度第二导电类型区域，元件隔离膜，第一绝缘层和第一导电膜。 第一触点耦合到第一高浓度第二导电类型区域，第二触点耦合到第二高浓度第二导电类型区域。 第三触点耦合到第一导电膜。 第一触点，第二触点和第三触点彼此分离。

    SEMICONDUCTOR DEVICE
    5.
    发明申请
    SEMICONDUCTOR DEVICE 有权
    半导体器件

    公开(公告)号：US20150262990A1

    公开(公告)日：2015-09-17

    申请号：US14714111

    申请日：2015-05-15

    Applicant: Renesas Electronics Corporation

    Inventor： Ryo KANDA ,  Tetsu TODA ,  Yasushi NAKAHARA ,  Yoshinori KAYA

    IPC: H01L27/02 ,  H01L29/40 ,  H01L29/06 ,  H01L29/78

    CPC classification number: H01L27/0207 ,  H01L21/761 ,  H01L29/0653 ,  H01L29/1083 ,  H01L29/1095 ,  H01L29/402 ,  H01L29/404 ,  H01L29/42368 ,  H01L29/7816 ,  H01L29/7835

    Abstract: A field plate electrode is repetitively disposed in a folded manner or a spiral shape in a direction along an edge of a first circuit region. A coupling transistor couples a first circuit to a second circuit lower in supply voltage than the first circuit. A second conductivity type region is disposed around the coupling transistor. A part of the field plate electrode partially overlaps with the second conductivity type region. The field plate electrode is electrically coupled to a drain electrode of the coupling transistor at a portion located on the first circuit region side from a center thereof in a width direction of the separation region. A ground potential or a power potential of the second circuit is applied to the field plate electrode at a portion located on the second conductivity type region side from the center.

    Abstract translation: 场板电极在沿着第一电路区域的边缘的方向上以折叠方式或螺旋形状重复地布置。 耦合晶体管将第一电路耦合到电源电压低于第一电路的第二电路。 第二导电类型区域设置在耦合晶体管周围。 场板电极的一部分与第二导电类型区域部分重叠。 场平板电极在分离区域的宽度方向上的位于第一电路区域侧的部分的电极上耦合到耦合晶体管的漏电极。 第二电路的接地电位或功率电位在距中心的第二导电类型区域侧的部分施加到场板电极。

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