公开(公告)号：US11742046B2

公开(公告)日：2023-08-29

申请号：US17318234

申请日：2021-05-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeongho Lee ,  Kwangjin Lee ,  Hee Hyun Nam ,  Jaeho Shin ,  Youngkwang Yoo

IPC: G11C29/42 ,  G11C29/44 ,  G11C7/10 ,  G11C29/18

CPC classification number: G11C29/42 ,  G11C7/1012 ,  G11C7/1063 ,  G11C29/18 ,  G11C29/44

Abstract: Disclosed is a method of performing, at a controller, an access to a memory device, which includes transmitting, at the controller, a first command signal, a first address signal, and a first swizzling signal to the memory device, selecting first data bits stored in a memory cell array of the memory device based on the first command signal and the first address signal, and sequentially outputting, at the memory device, at least a part of the first data bits to the controller in a burst manner, based on the first swizzling signal.

公开(公告)号：US11217302B2

公开(公告)日：2022-01-04

申请号：US16942928

申请日：2020-07-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangjin Lee

IPC: G11C11/54 ,  G06N3/063 ,  G11C13/00

Abstract: A neuromorphic device, including a controller configured to generate ternary data by converting each bit of binary data into a ternary bit; and a memory device configured to store the ternary data, wherein the memory device includes: a first memory cell array including first memory cells formed between lower word lines and bit lines, wherein a first memory cell of the first memory cells includes a first switching element and a first resistive element; and a second memory cell array including second memory cells formed between upper word lines and the bit lines, wherein a second memory cell of the second memory cells includes a second switching element and a second resistive element, and wherein each bit of the ternary data is identified by a combination of a data bit stored in the first memory cells and a mask bit stored in the second memory cells.

公开(公告)号：US20250118371A1

公开(公告)日：2025-04-10

申请号：US18666874

申请日：2024-05-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sewoong Lee ,  Kwangjin Lee ,  Kirock Kwon ,  Kyungduk Lee ,  Sangsoo Cha ,  Younsoo Cheon

IPC: G11C16/10 ,  G11C7/04 ,  G11C16/32 ,  G11C16/34

Abstract: Provided is a storage device including a memory device including a plurality of memory blocks each including a plurality of memory cells, a controller configured to control a program operation of the memory device in response to a write request received from a host, and a temperature sensor configured to measure an internal temperature, wherein the controller is further configured to, based on a first temperature measured by the temperature sensor, activate one of the plurality of memory blocks as a risk block and then control a high-reliability program operation using the risk block, or activate one of the plurality of memory blocks as a first normal block and then control a normal program operation using the first normal block.

公开(公告)号：US20240169756A1

公开(公告)日：2024-05-23

申请号：US18223853

申请日：2023-07-19

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JAEHYUN LIM ,  Inho Choi ,  Hyunjong Moon ,  Kwangjin Lee

IPC: G06V40/13

CPC classification number: G06V40/1306

Abstract: A fingerprint sensor package, including a package substrate which includes a cavity; a sensing substrate on the package substrate, the sensing substrate comprising a first surface and a second surface opposite to each other; a controller chip on the first surface of the sensing substrate; and a molding layer on the controller chip and the first surface of the sensing substrate, wherein the second surface of the sensing substrate is exposed by the cavity

公开(公告)号：US11636895B2

公开(公告)日：2023-04-25

申请号：US16870506

申请日：2020-05-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheaouk Lim ,  Jung Sunwoo ,  Kwangjin Lee

IPC: G11C13/00 ,  H01L45/00 ,  H01L27/24 ,  H03K19/20 ,  H03K19/21

Abstract: A writing method for a non-volatile memory device includes; performing a sensing operation, comparing write data with read data retrieved by the sensing operation, determining whether the write data is set state when the write data and the read data are the same, performing a set operation when the write data is set state, and not performing a write operation when the write data is not set data.

公开(公告)号：US20210118485A1

公开(公告)日：2021-04-22

申请号：US16881351

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheaouk Lim ,  Jung Sunwoo ,  Kwangjin Lee

IPC: G11C11/408 ,  G11C11/4094 ,  G11C11/4074 ,  G11C11/56

Abstract: A memory device includes a plurality of memory cells, each memory cell including a switching element and a data storage element having a phase change material, and each memory cell connected to one of a plurality of wordlines and to one of a plurality of bitlines, a decoder circuit configured to determine at least one of the plurality of memory cells as a selected memory cell, and a programming circuit configured to input a program current to the selected memory cell to perform a program operation, to detect a holding voltage of the selected memory cell, and to adjust a magnitude of the program current based on the detected holding voltage. The selected memory cell is turned off when a voltage across the selected memory cell is lower than the holding voltage.

公开(公告)号：US12294000B2

公开(公告)日：2025-05-06

申请号：US18322795

申请日：2023-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyun Lim ,  Kwangjin Lee ,  Hyunjong Moon ,  Inho Choi

IPC: G06K19/073 ,  G06V40/13 ,  H01L23/00 ,  H01L23/538 ,  H01L25/00 ,  H01L25/18

Abstract: A fingerprint sensor package includes: a first substrate including a core insulating layer including a first surface and a second surface and a through-hole, a first bonding pad on the second surface, and an external connection pad between an edge of the second surface and the first bonding pad; a second substrate in the through-hole and including a third surface and a fourth surface, and including first sensing patterns on the third surface, spaced apart in a first direction, and extending in a second direction, second sensing patterns spaced apart from each other in the second direction and extending in the first direction, and a second bonding pad on the fourth surface; a conductive support electrically connecting the first bonding pad and the second bonding pad and supporting the first substrate and the second substrate; a controller chip on the second substrate; and a molding layer on the second surface.

公开(公告)号：US11900709B2

公开(公告)日：2024-02-13

申请号：US17514088

申请日：2021-10-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehyun Lim ,  Younghwan Park ,  Kwangjin Lee ,  Dongha Lee ,  Hyuntaek Choi

IPC: H01L23/498 ,  H01L23/31 ,  H01L23/00 ,  G06K9/00 ,  G06V40/12 ,  G06K19/07 ,  G06K19/073 ,  G06K19/077

CPC classification number: G06V40/12 ,  G06K19/0718 ,  G06K19/07354 ,  G06K19/07747 ,  H01L23/3121 ,  H01L2224/16227

Abstract: A fingerprint sensor package includes a first substrate including a core insulating layer; a first bonding pad on the core insulating layer; and an external connection pad between an edge of the second surface of the core insulating layer and the first bonding pad, a second substrate on the core insulating layer, the second substrate including: a plurality of first sensing patterns spaced apart in a first direction and extending in a second direction intersecting with the first direction; a plurality of second sensing patterns spaced apart from each other in the second direction and extending in the first direction; and a second bonding pad, a conductive wire connecting the first bonding pad to the second bonding pad; a controller chip on the second substrate; and a molding layer covering the second substrate and the first bonding pad and spaced apart from the external connection pad.

公开(公告)号：US20230376247A1

公开(公告)日：2023-11-23

申请号：US18048696

申请日：2022-10-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kwangjin Lee ,  Kirock Kwon ,  Younsoo Cheon

IPC: G06F3/06

CPC classification number: G06F3/0659 ,  G06F3/0656 ,  G06F3/0613 ,  G06F3/0683

Abstract: A host system includes a volatile memory device configured to store first temporary data, an embedded storage device configured to store second temporary data, and a host device configured to determine whether to transmit new temporary data to the nonvolatile memory device for storage therein as the first temporary data or to the embedded storage device for storage therein as the second temporary data in response to a detection signal of an event associated with the new temporary data. The embedded storage device may include at least one nonvolatile memory device having a buffer area, in which the second temporary data is stored, and a user area, and a controller configured to control the at least one nonvolatile memory device such that the second temporary data in the buffer area is copied to the user area in response to a flush request of the host device.

公开(公告)号：US11238927B2

公开(公告)日：2022-02-01

申请号：US16881351

申请日：2020-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Cheaouk Lim ,  Jung Sunwoo ,  Kwangjin Lee

IPC: G11C13/00 ,  G11C11/408 ,  G11C11/56 ,  G11C11/4074 ,  G11C11/4094

Abstract: A memory device includes a plurality of memory cells, each memory cell including a switching element and a data storage element having a phase change material, and each memory cell connected to one of a plurality of wordlines and to one of a plurality of bitlines, a decoder circuit configured to determine at least one of the plurality of memory cells as a selected memory cell, and a programming circuit configured to input a program current to the selected memory cell to perform a program operation, to detect a holding voltage of the selected memory cell, and to adjust a magnitude of the program current based on the detected holding voltage. The selected memory cell is turned off when a voltage across the selected memory cell is lower than the holding voltage.