Three-dimensional neuromorphic device including switching element and resistive element

    公开(公告)号:US11217302B2

    公开(公告)日:2022-01-04

    申请号:US16942928

    申请日:2020-07-30

    Inventor: Kwangjin Lee

    Abstract: A neuromorphic device, including a controller configured to generate ternary data by converting each bit of binary data into a ternary bit; and a memory device configured to store the ternary data, wherein the memory device includes: a first memory cell array including first memory cells formed between lower word lines and bit lines, wherein a first memory cell of the first memory cells includes a first switching element and a first resistive element; and a second memory cell array including second memory cells formed between upper word lines and the bit lines, wherein a second memory cell of the second memory cells includes a second switching element and a second resistive element, and wherein each bit of the ternary data is identified by a combination of a data bit stored in the first memory cells and a mask bit stored in the second memory cells.

    MEMORY DEVICE
    6.
    发明申请

    公开(公告)号:US20210118485A1

    公开(公告)日:2021-04-22

    申请号:US16881351

    申请日:2020-05-22

    Abstract: A memory device includes a plurality of memory cells, each memory cell including a switching element and a data storage element having a phase change material, and each memory cell connected to one of a plurality of wordlines and to one of a plurality of bitlines, a decoder circuit configured to determine at least one of the plurality of memory cells as a selected memory cell, and a programming circuit configured to input a program current to the selected memory cell to perform a program operation, to detect a holding voltage of the selected memory cell, and to adjust a magnitude of the program current based on the detected holding voltage. The selected memory cell is turned off when a voltage across the selected memory cell is lower than the holding voltage.

    Fingerprint sensor package and smart card having the same

    公开(公告)号:US12294000B2

    公开(公告)日:2025-05-06

    申请号:US18322795

    申请日:2023-05-24

    Abstract: A fingerprint sensor package includes: a first substrate including a core insulating layer including a first surface and a second surface and a through-hole, a first bonding pad on the second surface, and an external connection pad between an edge of the second surface and the first bonding pad; a second substrate in the through-hole and including a third surface and a fourth surface, and including first sensing patterns on the third surface, spaced apart in a first direction, and extending in a second direction, second sensing patterns spaced apart from each other in the second direction and extending in the first direction, and a second bonding pad on the fourth surface; a conductive support electrically connecting the first bonding pad and the second bonding pad and supporting the first substrate and the second substrate; a controller chip on the second substrate; and a molding layer on the second surface.

    EMBEDDED STORAGE DEVICE, HOST SYSTEM HAVING THE SAME, AND METHOD OF OPERATING THE SAME

    公开(公告)号:US20230376247A1

    公开(公告)日:2023-11-23

    申请号:US18048696

    申请日:2022-10-21

    CPC classification number: G06F3/0659 G06F3/0656 G06F3/0613 G06F3/0683

    Abstract: A host system includes a volatile memory device configured to store first temporary data, an embedded storage device configured to store second temporary data, and a host device configured to determine whether to transmit new temporary data to the nonvolatile memory device for storage therein as the first temporary data or to the embedded storage device for storage therein as the second temporary data in response to a detection signal of an event associated with the new temporary data. The embedded storage device may include at least one nonvolatile memory device having a buffer area, in which the second temporary data is stored, and a user area, and a controller configured to control the at least one nonvolatile memory device such that the second temporary data in the buffer area is copied to the user area in response to a flush request of the host device.

    Memory device having program current adjustible based on detected holding voltage

    公开(公告)号:US11238927B2

    公开(公告)日:2022-02-01

    申请号:US16881351

    申请日:2020-05-22

    Abstract: A memory device includes a plurality of memory cells, each memory cell including a switching element and a data storage element having a phase change material, and each memory cell connected to one of a plurality of wordlines and to one of a plurality of bitlines, a decoder circuit configured to determine at least one of the plurality of memory cells as a selected memory cell, and a programming circuit configured to input a program current to the selected memory cell to perform a program operation, to detect a holding voltage of the selected memory cell, and to adjust a magnitude of the program current based on the detected holding voltage. The selected memory cell is turned off when a voltage across the selected memory cell is lower than the holding voltage.

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