公开(公告)号：US20190280178A1

公开(公告)日：2019-09-12

申请号：US16424178

申请日：2019-05-28

Applicant: SEOUL VIOSYS CO., LTD. ,  SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Hyun A KIM ,  Jong Kyu KIM ,  Jong Hyeon CHAE

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/10 ,  H01L33/64

Abstract: A light emitting diode having a plurality of light emitting cells is provided. The light emitting diode according to an exemplary embodiment includes a lower insulation layer covering an ohmic reflection layer, connectors disposed on the lower insulation layer to connect the light emitting cells, and an upper insulation layer covering the connectors and the lower insulation layer. An edge of the lower insulation layer is spaced apart farther from an edge of the upper insulation layer than an edge of the light emitting cell. The lower insulation layer susceptible to moisture may be protected and reliability of the light emitting diode may improve.

公开(公告)号：US20210359188A1

公开(公告)日：2021-11-18

申请号：US17389025

申请日：2021-07-29

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

IPC: H01L33/62 ,  H01L33/46 ,  H01L27/15 ,  H01L33/10

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

公开(公告)号：US20200176636A1

公开(公告)日：2020-06-04

申请号：US16782969

申请日：2020-02-05

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Daewoong SUH ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Se Hee OH ,  Hyun A KIM

IPC: H01L33/38

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

公开(公告)号：US20240313184A1

公开(公告)日：2024-09-19

申请号：US18671619

申请日：2024-05-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jae Kwon KIM ,  Min Chan HEO ,  Kyoung Wan KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

IPC: H01L33/62 ,  H01L27/15 ,  H01L33/10 ,  H01L33/46

CPC classification number: H01L33/62 ,  H01L27/156 ,  H01L33/10 ,  H01L33/46

Abstract: A light emitting diode includes a first conductivity type semiconductor layer, a mesa disposed on the first conductivity type semiconductor layer, and including an active layer and a second conductivity type semiconductor layer, and a lower insulation layer covering the mesa and at least a portion of the first conductivity type semiconductor layer exposed around the mesa, and having a first opening for allowing electrical connection to the first conductivity type semiconductor layer and a second opening for allowing electrical connection to the second conductivity type semiconductor layer. The active layer generates light having a peak wavelength of about 500 nm or less, and the lower insulation layer includes a distributed Bragg reflector.

公开(公告)号：US20230079200A1

公开(公告)日：2023-03-16

申请号：US17987711

申请日：2022-11-15

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Jae Kwon KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

IPC: H01L33/46 ,  H01L23/00 ,  H01L33/10 ,  H01L33/40 ,  H01L33/48

Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

公开(公告)号：US20200098949A1

公开(公告)日：2020-03-26

申请号：US16660460

申请日：2019-10-22

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Hyun A KIM ,  Daewoong SUH

IPC: H01L33/44 ,  H01L23/00 ,  H01L33/24 ,  H01L33/14 ,  H01L33/10 ,  H01L33/62 ,  H01L33/54 ,  H01L33/40 ,  H01L27/15 ,  H01L33/20 ,  H01L33/38 ,  H01L25/075 ,  H01L33/08

Abstract: A light emitting diode apparatus includes a substrate, a first conductive type semiconductor layer, a second conductive type semiconductor layer, a mesa, a lower insulating layer, a first pad and a second pad. The substrate has a first surface and a second surface opposite to the first surface. The first conductivity type semiconductor layer is disposed on the first surface of the substrate. The mesa is disposed on the first conductive semiconductor layer and has an active layer and the second conductive semiconductor layer. A peripheral edge of the first conductive semiconductor layer is exposed. The lower insulating layer covers the mesa and the first conductive semiconductor layer and has a plurality of first openings exposing the first conductive semiconductor layer along a peripheral edge of the substrate.

公开(公告)号：US20150325752A1

公开(公告)日：2015-11-12

申请号：US14807290

申请日：2015-07-23

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Chung Hoon LEE ,  Daewoong SUH ,  Jong Min JANG ,  Joon Sup LEE ,  Won Young ROH ,  Min Woo KANG ,  Hyun A KIM ,  Seon Min BAE

IPC: H01L33/44 ,  H01L33/00 ,  H01L33/20

CPC classification number: H01L33/44 ,  H01L27/153 ,  H01L33/005 ,  H01L33/007 ,  H01L33/08 ,  H01L33/20 ,  H01L33/387 ,  H01L33/405 ,  H01L2933/0025

Abstract: A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed.

公开(公告)号：US20210005785A1

公开(公告)日：2021-01-07

申请号：US17024167

申请日：2020-09-17

Applicant: Seoul Viosys Co., Ltd.

Inventor： Jong Hyeon CHAE ,  Joon Sup LEE ,  Daewoong SUH ,  Won Young ROH ,  Min Woo KANG ,  Jong Min JANG ,  Se Hee OH ,  Hyun A KIM

IPC: H01L33/38

Abstract: A light emitting diode is provided to include a first conductive-type semiconductor layer; a mesa including a second conductive-type semiconductor layer disposed on the first conductive-type semiconductor layer and an active layer interposed between the first and the second conductive-type semiconductor layers; and a first electrode disposed on the mesa, wherein the first conductive-type semiconductor layer includes a first contact region disposed around the mesa along an outer periphery of the first conductive-type semiconductor layer; and a second contact region at least partially surrounded by the mesa, the first electrode is electrically connected to at least a portion of the first contact region and at least a portion of the second contact region, and a linewidth of an adjoining region between the first contact region and the first electrode is greater than the linewidth of an adjoining region between the second contact region and the first electrode.

公开(公告)号：US20200220049A1

公开(公告)日：2020-07-09

申请号：US16823734

申请日：2020-03-19

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Jae Kwon KIM ,  Jong Kyu KIM ,  Hyun A KIM ,  Joon Sup LEE

IPC: H01L33/46 ,  H01L33/10 ,  H01L33/40 ,  H01L33/48 ,  H01L23/00

Abstract: A light emitting diode chip having improved light extraction efficiency is provided. The light emitting diode chip includes a substrate, a first conductivity type semiconductor layer, a mesa, a side coating layer, and a reflection structure. The first conductivity type semiconductor layer is disposed on the substrate. The mesa includes an active layer and a second conductivity type semiconductor layer. The mesa is disposed on a partial region of the first conductivity type semiconductor layer to expose an upper surface of the first conductivity type semiconductor layer along an edge of the first conductivity type semiconductor layer. The side coating layer(s) covers a side surface of the mesa. The reflection structure is spaced apart from the side coating layer(s) and disposed on the exposed first conductivity type semiconductor layer.

公开(公告)号：US20190051805A1

公开(公告)日：2019-02-14

申请号：US16158305

申请日：2018-10-12

Applicant: SEOUL VIOSYS CO., LTD.

Inventor： Se Hee OH ,  Hyun A KIM ,  Jong Kyu KIM ,  Hyoung Jin LIM

IPC: H01L33/62 ,  H01L33/32 ,  H01L33/50 ,  H01L33/10 ,  H01L25/075 ,  H01L33/64

Abstract: A light emitting diode includes a first light emitting cell and a second light emitting cell comprising an n-type semiconductor layer, and a p-type semiconductor layer, respectively; reflection structures contacting the p-type semiconductor layers; a first contact layer in ohmic contact with the n-type semiconductor layer of the first light emitting cell; a second contact layer in ohmic contact with the n-type semiconductor layer of the second light emitting cell and connected to the reflection structure on the first light emitting cell. An n-electrode pad is connected to the first contact layer; and a p-electrode pad is connected to the reflection structure on the second light emitting cell. The first light emitting cell and the second light emitting cell are isolated from each other, and their outer side surfaces are inclined steeper than the inner sides. Therefore, a forward voltage may be lowered and light output may be improved.