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Patent Agency Ranking
公开(公告)号：US20150255679A1
公开(公告)日：2015-09-10
申请号：US14721224
申请日：2015-05-26
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong LEE , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Tae Kyoon KIM
CPC classification number: H01L33/382 , H01L24/05 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/20 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2224/04042 , H01L2224/05558 , H01L2224/05644 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: A light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.
Abstract translation: 1.一种发光二极管（LED），包括包括第一半导体层，有源层和第二半导体层的半导体堆叠结构，设置在基板上的半导体堆叠，设置在半导体堆叠结构上的导电基板和电极 设置在导电衬底上并与导电衬底欧姆接触，其中电极包括穿透电极的沟槽和导电衬底的一部分。
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公开(公告)号：US20170200857A1
公开(公告)日：2017-07-13
申请号：US15469253
申请日：2017-03-24
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan KIM , Tae Kyoon KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Jin Woong LEE , In Soo KIM
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
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公开(公告)号：US20150311390A1
公开(公告)日：2015-10-29
申请号：US14795167
申请日：2015-07-09
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan KIM , Tae Kyoon KIM , Yeo Jin YOON , Ye Seul KIM , Sang Hyun OH , Jin Woong LEE , In Soo KIM
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: A method of fabricating a light emitting diode (LED) includes: sequentially stacking a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer on a substrate; and separating the substrate into unit chips, and at the same time, forming a concavo-convex structure having the shape of irregular vertical lines in a side surface of the unit chip.
Abstract translation: 一种制造发光二极管（LED）的方法包括：在衬底上依次堆叠第一导电类型半导体层，有源层和第二导电类型半导体层; 并将基板分离为单元芯片，同时在单元芯片的侧面形成具有不规则垂直线形状的凹凸结构。
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公开(公告)号：US20140159089A1
公开(公告)日：2014-06-12
申请号：US14098687
申请日：2013-12-06
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Jin Woong LEE , Kyoung Wan KIM , Yeo Jin YOON , Ye Seul KIM , Tae Kyoon KIM
CPC classification number: H01L33/382 , H01L24/05 , H01L33/005 , H01L33/007 , H01L33/0075 , H01L33/20 , H01L33/38 , H01L33/387 , H01L33/42 , H01L33/46 , H01L33/60 , H01L33/62 , H01L2224/04042 , H01L2224/05558 , H01L2224/05644 , H01L2924/12032 , H01L2924/12041 , H01L2924/12042 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/0058 , H01L2933/0066 , H01L2924/00
Abstract: Exemplary embodiments of the present invention disclose a light-emitting diode (LED) including a semiconductor stack structure including a first semiconductor layer, an active layer, and a second semiconductor layer, the semiconductor stack disposed on a substrate, a conductive substrate disposed on the semiconductor stack structure, and an electrode disposed on the conductive substrate and in ohmic contact with the conductive substrate, wherein the electrode comprises grooves penetrating the electrode and a portion of the conductive substrate.
Abstract translation: 本发明的示例性实施例公开了一种包括半导体堆叠结构的发光二极管（LED），其包括第一半导体层，有源层和第二半导体层，设置在基板上的半导体堆叠， 半导体堆叠结构，以及设置在导电衬底上并与导电衬底欧姆接触的电极，其中电极包括穿透电极和导电衬底的一部分的沟槽。
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公开(公告)号：US20140117395A1
公开(公告)日：2014-05-01
申请号：US14067455
申请日：2013-10-30
Applicant: Seoul Viosys Co., Ltd.
Inventor： Kyung Wan KIM , Tae Kyoon KIM , Yeo Jin YOON , Ye Seoul KIM , Sang Hyun OH , Jin Woong LEE , In Soo KIM
CPC classification number: H01L33/385 , H01L33/007 , H01L33/0095 , H01L33/025 , H01L33/06 , H01L33/20 , H01L33/22 , H01L33/30 , H01L33/32 , H01L2933/0016 , H01L2933/0058
Abstract: Provided are a light emitting diode (LED) and a method of fabricating the same. The LED includes a unit chip. The unit chip includes a substrate, and a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer which are sequentially stacked on the substrate. A concavo-convex structure having the shape of irregular vertical lines is disposed in a side surface of the unit chip.
Abstract translation: 提供一种发光二极管（LED）及其制造方法。 LED包括单元芯片。 单元芯片包括依次层叠在基板上的基板和第一导电型半导体层，有源层和第二导电型半导体层。 具有不规则垂直线形状的凹凸结构设置在单元芯片的侧表面中。
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