公开(公告)号：US20220146564A1

公开(公告)日：2022-05-12

申请号：US17519679

申请日：2021-11-05

Applicant: SHOWA DENKO K.K.

Inventor： Koichi Murata ,  Isaho KAMATA ,  Hidekazu TSUCHIDA ,  Akira MIYASAKA

IPC: G01R31/26 ,  H01L21/66 ,  G01R1/067 ,  G01R31/265 ,  C23C16/32 ,  C23C16/52 ,  C30B25/16 ,  C30B29/36

Abstract: A semiconductor wafer evaluation apparatus brings a contact maker (mercury liquefied at room temperature), as a Schottky electrode, into contact with a semiconductor wafer, intermittently applies a voltage from a pulse power supply, and evaluates the state (kinds, density) of point defects by an evaluation means based on the status of the electrostatic capacity of the semiconductor wafer. In this manner, the state (kinds, density) of the point defects in the plane of a large-diameter semiconductor wafer is directly evaluated using a large table.

公开(公告)号：US20170233893A1

公开(公告)日：2017-08-17

申请号：US15587258

申请日：2017-05-04

Applicant: SHOWA DENKO K.K.

Inventor： Akira MIYASAKA ,  Yutaka TAJIMA ,  Yoshiaki KAGESHIMA ,  Daisuke MUTO ,  Kenji MOMOSE

IPC: C30B29/36 ,  C23C16/32 ,  H01L21/02 ,  C30B25/20 ,  H01L29/16 ,  H01L29/34

CPC classification number: H01L21/0262 ,  C23C16/325 ,  C30B25/00 ,  C30B25/186 ,  C30B25/20 ,  C30B29/36 ,  H01L21/02378 ,  H01L21/02433 ,  H01L21/02529 ,  H01L21/02576 ,  H01L22/12 ,  H01L29/0692 ,  H01L29/1608 ,  H01L29/34

Abstract: A SiC epitaxial wafer including: a SiC epitaxial layer that is formed on a SiC substrate having an off angle, wherein the surface density of triangular defects, in which a distance from a starting point to an opposite side in a horizontal direction is equal to or greater than (a thickness of the SiC epitaxial layer/tan(x))×90% and equal to or less than (the thickness of the SiC epitaxial layer/tan(x))×110%, in the SiC epitaxial layer is in the range of 0.05 pieces/cm2 to 0.5 pieces/cm2 (where x indicates the off angle).

公开(公告)号：US20180371641A1

公开(公告)日：2018-12-27

申请号：US16063911

申请日：2016-12-12

Applicant: SHOWA DENKO K.K.

Inventor： Daisuke MUTO ,  Akira MIYASAKA

IPC: C30B29/36 ,  H01L21/02 ,  C30B25/20

Abstract: This method of producing a SiC epitaxial wafer having an epitaxial layer on a SiC single crystal substrate, and includes: when performing crystal growth of the epitaxial layer, a step of forming a part of an epitaxial layer under first conditions at an initial stage where the crystal growth is started; and a step of forming a part of a SiC epitaxial layer under second conditions in which a Cl/Si ratio is decreased and a C/Si ratio is increased in comparison to those in the first conditions, wherein the C/Si ratio is equal to or less than 0.6 and the Cl/Si ratio is equal to or more than 5.0 in the first conditions.

公开(公告)号：US20180016706A1

公开(公告)日：2018-01-18

申请号：US15553248

申请日：2016-02-16

Applicant: SHOWA DENKO K.K.

Inventor： Jun NORIMATSU ,  Akira MIYASAKA ,  Yoshiaki KAGESHIMA ,  Koji KAMEI ,  Daisuke MUTO

IPC: C30B29/36 ,  H01L21/205 ,  H01L21/20

CPC classification number: C30B29/36 ,  H01L21/20 ,  H01L21/2003 ,  H01L21/205 ,  H01L21/2053

Abstract: An SiC epitaxial wafer having an SiC epitaxial layer formed on an SiC single crystal substrate having an offset angle of 4 degrees or less in a direction from a (0001) plane. A trapezoidal defect included in the SiC epitaxial wafer includes an inverted trapezoidal defect in which a length of a lower base on a downstream side of a step flow is equal to or less than a length of an upper base on an upstream side of the step flow. Also disclosed is a method for manufacturing the SiC epitaxial wafer.

公开(公告)号：US20160312381A1

公开(公告)日：2016-10-27

申请号：US15102314

申请日：2014-10-30

Applicant: SHOWA DENKO K.K.

Inventor： Jun NORIMATSU ,  Akira MIYASAKA ,  Yoshiaki KAGESHIMA

IPC: C30B25/12 ,  C30B25/14 ,  C30B29/36 ,  H01L21/687 ,  C23C16/455 ,  C23C16/458 ,  H01L21/02 ,  C30B25/20 ,  C23C16/32

CPC classification number: C30B25/12 ,  C23C16/325 ,  C23C16/45508 ,  C23C16/4584 ,  C30B25/14 ,  C30B25/165 ,  C30B25/20 ,  C30B29/36 ,  C30B31/14 ,  H01L21/02378 ,  H01L21/02529 ,  H01L21/0262 ,  H01L21/68735 ,  H01L21/68764 ,  H01L21/68771

Abstract: The SiC epitaxial wafer-producing apparatus according to the invention includes a mounting plate having a concave accommodation portion, a satellite that is provided in the concave accommodation portion and has an upper surface on which a SiC substrate is placed, and a carbon member that is provided in the concave accommodation portion at a position which is lower than the SiC substrate and does not come into contact with the SiC substrate.

Abstract translation: 根据本发明的SiC外延晶片生产设备包括具有凹入容纳部分的安装板，设置在凹入容纳部分中并具有其上放置有SiC衬底的上表面的卫星，以及位于 设置在比SiC基板低的位置并且不与SiC基板接触的凹入容纳部。