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公开(公告)号：US09166374B1
公开(公告)日：2015-10-20
申请号：US14604223
申请日：2015-01-23
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , You-Da Lin , Christiane Elsass
CPC classification number: H01S5/34333 , H01L21/0274 , H01L21/042 , H01L21/28123 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/469 , H01L21/4828 , H01L33/08 , H01L33/16 , H01L41/332 , H01S5/0014 , H01S5/028 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S5/3214 , H01S5/3216 , H01S5/3401
Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
Abstract translation: 光学装置包括含镓和氮的衬底，其包括以（20-2-1）取向配置的表面区域，（30-3-1）取向或（30-31）取向，在+/- 10 朝向朝向c平面和/或a平面的角度。 还公开了具有超过表面区域的量子阱区的光学器件。
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2.发明授权公开(公告)号：US10566766B1
公开(公告)日：2020-02-18
申请号：US16219689
申请日：2018-12-13
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass
Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
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3.发明授权公开(公告)号：US09787060B1
公开(公告)日：2017-10-10
申请号：US15298583
申请日：2016-10-20
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass
CPC classification number: H01S5/3202 , H01S5/0422 , H01S5/2009 , H01S5/2031 , H01S5/2205 , H01S5/3063 , H01S5/3211 , H01S5/3216 , H01S5/32308 , H01S5/32341 , H01S5/34333 , H01S5/34386 , H01S2301/173
Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
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公开(公告)号：US09466949B1
公开(公告)日：2016-10-11
申请号：US14857719
申请日：2015-09-17
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass , Thiago P. Melo , Mathew C. Schmidt
IPC: H01S5/02 , H01S5/22 , H01S5/343 , H01S5/227 , H01S5/32 , H01L21/02 , H01S5/30 , H01S5/042 , H01S5/10
CPC classification number: H01S5/34333 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0425 , H01S5/1082 , H01S5/2201 , H01S5/2275 , H01S5/3063 , H01S5/3202 , H01S2301/173 , H01S2304/12
Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
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公开(公告)号：US10651629B1
公开(公告)日：2020-05-12
申请号：US16252833
申请日：2019-01-21
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass , Thiago P. Melo , Mathew C. Schmidt
IPC: H01S5/02 , H01S5/343 , H01L21/02 , H01S5/22 , H01S5/227 , H01S5/30 , H01S5/10 , H01S5/042 , H01S5/32
Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
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Patent Agency Ranking
公开(公告)号：US10522976B1
公开(公告)日：2019-12-31
申请号：US16118217
申请日：2018-08-30
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , You-Da Lin , Christiane Elsass
IPC: H01S5/00 , H01S5/343 , H01S5/028 , H01S5/22 , H01S5/34 , H01S5/32 , H01S5/20 , H01L33/08 , H01L41/332 , H01L21/48 , H01L21/461 , H01L21/027 , H01L21/04 , H01L21/302 , H01L21/311 , H01L21/469 , H01L21/28 , H01S5/042 , H01L33/16
Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
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公开(公告)号：US09887517B1
公开(公告)日：2018-02-06
申请号：US15289914
申请日：2016-10-10
Applicant: SORAA LASER DIODE, INC.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass , Thiago P. Melo , Mathew C. Schmidt
CPC classification number: H01S5/34333 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0425 , H01S5/1082 , H01S5/2201 , H01S5/2275 , H01S5/3063 , H01S5/3202 , H01S2301/173 , H01S2304/12
Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
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8.发明授权公开(公告)号：US09166372B1
公开(公告)日：2015-10-20
申请号：US14317846
申请日：2014-06-27
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass , Thiago P. Melo , Mathew C. Schmidt
CPC classification number: H01S5/34333 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01S5/0425 , H01S5/1082 , H01S5/2201 , H01S5/2275 , H01S5/3063 , H01S5/3202 , H01S2301/173 , H01S2304/12
Abstract: A gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region. The surface region is configured on either a non-polar crystal orientation or a semi-polar crystal orientation. The device has a recessed region formed within a second region of the substrate material, the second region being between a first region and a third region. The recessed region is configured to block a plurality of defects from migrating from the first region to the third region. The device has an epitaxially formed gallium and nitrogen containing region formed overlying the third region. The epitaxially formed gallium and nitrogen containing region is substantially free from defects migrating from the first region and an active region formed overlying the third region.
Abstract translation: 含镓和氮的激光二极管器件。 该器件具有包含表面区域的含镓和氮的衬底材料。 表面区域配置在非极性晶体取向或半极性晶体取向上。 该器件具有形成在衬底材料的第二区域内的凹陷区域，第二区域位于第一区域和第三区域之间。 凹陷区域被配置为阻挡多个缺陷从第一区域迁移到第三区域。 该器件具有形成在第三区域上的外延形成的含镓和氮的区域。 外延形成的含镓和氮的区域基本上没有从第一区域迁移的缺陷和形成在第三区域上的有源区域。
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9.发明授权公开(公告)号：US10199802B1
公开(公告)日：2019-02-05
申请号：US15728374
申请日：2017-10-09
Applicant: Soraa Laser Diode, Inc.
Inventor： Melvin McLaurin , James W. Raring , Christiane Elsass
Abstract: In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a ({10-10}) crystal orientation or a {10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction. The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.
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公开(公告)号：US10069282B1
公开(公告)日：2018-09-04
申请号：US15424551
申请日：2017-02-03
Applicant: Soraa Laser Diode, Inc.
Inventor： James W. Raring , You-Da Lin , Christiane Elsass
IPC: H01S5/00 , H01S5/343 , H01S5/22 , H01S5/028 , H01L21/04 , H01L21/311 , H01L21/28 , H01L41/332 , H01L21/48 , H01L21/027 , H01L21/302 , H01L21/461 , H01L21/469
CPC classification number: H01S5/34333 , H01L21/0274 , H01L21/042 , H01L21/28123 , H01L21/302 , H01L21/311 , H01L21/461 , H01L21/469 , H01L21/4828 , H01L33/08 , H01L33/16 , H01L41/332 , H01S5/0014 , H01S5/028 , H01S5/0287 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/2201 , H01S5/2214 , H01S5/3202 , H01S5/3214 , H01S5/3216 , H01S5/3401
Abstract: An optical device includes a gallium and nitrogen containing substrate comprising a surface region configured in a (20-2-1) orientation, a (30-3-1) orientation, or a (30-31) orientation, within +/−10 degrees toward c-plane and/or a-plane from the orientation. Optical devices having quantum well regions overly the surface region are also disclosed.
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