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    Dry scribing methods, devices and systems
    1.
    发明授权
    Dry scribing methods, devices and systems 有权

    公开(公告)号：US09731965B1

    公开(公告)日：2017-08-15

    申请号：US15087732

    申请日：2016-03-31

    Applicant: STMicroelectronics S.R.L.

    Inventor： Matteo Perletti ,  Pietro Petruzza ,  Ilaria Gelmi ,  Laura Maria Castoldi

    IPC: B81C1/00

    CPC classification number: B81C1/00888 ,  B81B2201/0257 ,  B81B2207/012

    Abstract: A method of forming semiconductor devices, such as capacitive type MEMS acoustic transducers, in a semiconductor includes forming a mask layer on a back surface of the semiconductor wafer and removing first etch portions of the mask layer and scribe trench portions of the mask layer. Each scribe trench portion is positioned in the mask layer to define a corresponding scribe boundary of a plurality of the semiconductor devices being formed in the semiconductor wafer. Etching the semiconductor wafer through the first etch portions and the scribe trench portions may be done simultaneously to form external back chambers and scribe trenches, respectively, in the semiconductor wafer. The semiconductor wafer is then cut along cutting lines in the scribe trenches to singulate individual MEMS acoustic transducers. The etching through the first and second etch portions and the scribe trench portions are dry etching of the semiconductor substrate in one embodiment.

    DRY SCRIBING METHODS, DEVICES AND SYSTEMS
    5.
    发明申请
    DRY SCRIBING METHODS, DEVICES AND SYSTEMS 审中-公开

    公开(公告)号：US20170313582A1

    公开(公告)日：2017-11-02

    申请号：US15651444

    申请日：2017-07-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： Matteo Perletti ,  Pietro Petruzza ,  Ilaria Gelmi ,  Laura Maria Castoldi

    IPC: B81C1/00

    CPC classification number: B81C1/00888 ,  B81B2201/0257 ,  B81B2207/012

    Abstract: A transducer includes a first substrate and an integrated circuit coupled to the first substrate. A sensor is electrically coupled to the integrated circuit and includes a second substrate having a first surface and a second surface opposite the first surface. The second substrate has scribe boundaries defining an outer edge of the second substrate and a chamber extending from the first surface towards but not reaching the second surface. A chamber extends from the second surface to meet the chamber from first surface. Scribe trenches in the second surface at the scribe boundaries have a width from the scribe boundary towards the chamber extending from the second surface. A membrane extends over the first surface and over the chamber extending from first surface. A plate extends from the first surface of the second substrate over the membrane.

    Dry scribing methods, devices and systems
    7.
    发明授权
    Dry scribing methods, devices and systems 有权

    公开(公告)号：US10322931B2

    公开(公告)日：2019-06-18

    申请号：US15651444

    申请日：2017-07-17

    Applicant: STMicroelectronics S.r.l.

    Inventor： Matteo Perletti ,  Pietro Petruzza ,  Ilaria Gelmi ,  Laura Maria Castoldi

    IPC: B81C1/00

    Abstract: A transducer includes a first substrate and an integrated circuit coupled to the first substrate. A sensor is electrically coupled to the integrated circuit and includes a second substrate having a first surface and a second surface opposite the first surface. The second substrate has scribe boundaries defining an outer edge of the second substrate and a chamber extending from the first surface towards but not reaching the second surface. A chamber extends from the second surface to meet the chamber from first surface. Scribe trenches in the second surface at the scribe boundaries have a width from the scribe boundary towards the chamber extending from the second surface. A membrane extends over the first surface and over the chamber extending from first surface. A plate extends from the first surface of the second substrate over the membrane.

    Oscillator device and manufacturing process of the same
    10.
    发明授权
    Oscillator device and manufacturing process of the same 有权
    振荡器和制造工艺相同

    公开(公告)号：US08988155B2

    公开(公告)日：2015-03-24

    申请号：US13689430

    申请日：2012-11-29

    Applicant: STMicroelectronics S.r.l.

    Inventor： Giorgio Allegato ,  Paolo Ferrari ,  Laura Maria Castoldi ,  Benedetto Vigna

    IPC: H03B5/32 ,  H01L41/053 ,  H01L41/083 ,  H01L41/23 ,  H03B1/00 ,  H01L29/66 ,  H01L41/29 ,  H03H3/02 ,  H03H9/05 ,  H03H9/10 ,  H01L41/09 ,  H03H9/17 ,  H03H3/007

    CPC classification number: H03B1/00 ,  H01L29/66007 ,  H01L41/053 ,  H01L41/083 ,  H01L41/094 ,  H01L41/23 ,  H01L41/29 ,  H03B5/32 ,  H03H3/007 ,  H03H3/02 ,  H03H9/0538 ,  H03H9/10 ,  H03H9/1007 ,  H03H9/1057 ,  H03H9/172

    Abstract: An oscillator device includes: a structural layer extending over a first side of a semiconductor substrate; a semiconductor cap set on the structural layer; a coupling region extending between and hermetically sealing the structural layer and the cap and forming a cavity within the oscillator device; first and second conductive paths extending between the substrate and the structural layer; first and second conductive pads housed in the cavity and electrically coupled to first terminal portions of the first and second conductive paths by first and second connection regions, respectively, which extend through and are insulated from the structural layer; a piezoelectric resonator having first and second ends electrically coupled, respectively, to the first and second conductive pads, and extending in the cavity; and third and fourth conductive pads positioned outside the cavity and electrically coupled to second terminal portions of the first and second conductive paths.

    Abstract translation: 振荡器装置包括：在半导体衬底的第一侧上延伸的结构层; 设置在结构层上的半导体盖; 耦合区域，其在所述结构层和所述盖之间延伸并且密封所述结构层和所述盖并在所述振荡器装置内形成空腔; 在基板和结构层之间延伸的第一和第二导电路径; 第一和第二导电焊盘，其容纳在所述空腔中，并且分别通过延伸穿过所述第一和第二导电路径并与所述结构层绝缘的第一和第二连接区域电连接到所述第一和第二导电路径的第一端子部分; 压电谐振器，其具有分别电耦合到第一和第二导电焊盘并且在空腔中延伸的第一和第二端; 以及第三和第四导电焊盘，其位于腔的外部并电耦合到第一和第二导电路径的第二端子部分。

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