公开(公告)号：US11692283B2

公开(公告)日：2023-07-04

申请号：US17009533

申请日：2020-09-01

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ruggero Anzalone ,  Nicolo′ Frazzetto ,  Francesco La Via

IPC: C30B25/12 ,  H01L21/687 ,  H01L21/02 ,  C23C16/32 ,  C23C16/458 ,  C30B29/36 ,  H01L21/67 ,  C23C16/46 ,  C30B25/08

CPC classification number: C30B25/12 ,  C23C16/325 ,  C23C16/4583 ,  C30B29/36 ,  C23C16/4585 ,  C23C16/46 ,  C30B25/08 ,  H01L21/0262 ,  H01L21/02529 ,  H01L21/67011 ,  H01L21/6875 ,  H01L21/68785

Abstract: An apparatus for growing semiconductor wafers, in particular of silicon carbide, wherein a chamber houses a collection container and a support or susceptor arranged over the container. The support is formed by a frame surrounding an opening accommodating a plurality of arms and a seat. The frame has a first a second surface, opposite to each other, with the first surface of the frame facing the support. The arms are formed by cantilever bars extending from the frame into the opening, having a maximum height smaller than the frame, and having at the top a resting edge. The resting edges of the arms define a resting surface that is at a lower level than the second surface of the frame. The seat has a bottom formed by the resting surface.

公开(公告)号：US11309177B2

公开(公告)日：2022-04-19

申请号：US16182050

申请日：2018-11-06

Applicant: STMICROELECTRONICS S.r.l.

Inventor： Ruggero Anzalone ,  Nicolo′ Frazzetto

IPC: H01L21/02 ,  H01L29/16 ,  H01L21/683 ,  C23C16/01 ,  C23C16/32

Abstract: Various embodiments provide an apparatus and method for fabricating a wafer, such as a SiC wafer. The apparatus includes a support having a plurality of arms for supporting a substrate. The arms allows for physical contact between the support and the substrate to be minimized. As a result, when the substrate is melted, surface tension between the arms and molten material is reduced, and the molten material will be less likely to cling to the support.

公开(公告)号：US09257550B2

公开(公告)日：2016-02-09

申请号：US14788708

申请日：2015-06-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Donato Corona ,  Nicolo′ Frazzetto ,  Antonio Giuseppe Grimaldi ,  Corrado Iacono ,  Monica Micciche′

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/732 ,  H01L29/808 ,  H01L29/165 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/7802 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02502 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/046 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0821 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1004 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/402 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66916 ,  H01L29/7322 ,  H01L29/7813 ,  H01L29/8083

Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.