公开(公告)号：US20160087080A1

公开(公告)日：2016-03-24

申请号：US14949528

申请日：2015-11-23

Applicant: STMicroelectronics S.R.L.

Inventor： Antonio Giuseppe Grimaldi ,  Davide Giuseppe Patti ,  Monica Miccichè ,  Salvatore Liotta ,  Angela Longhitano

IPC: H01L29/66 ,  H01L29/423

CPC classification number: H01L29/66666 ,  H01L27/0629 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/6609 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/861

Abstract: A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor material. A region of the gate region extends onto the main surface is insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into said insulated region, and a cathode region of the second type of conductivity is formed into said insulated region in contact with the anode region; the anode region and the cathode region define a thermal diode electrically insulated from the chip.

Abstract translation: 第一导电类型的半导体材料中的VTMOS晶体管包括第二导电类型的体区和第一类导电性的源区。 栅极区域通过主体区域延伸到主表面并与半导体材料绝缘。 延伸到主表面上的栅极区域的区域与栅极区域的其余部分绝缘。 第一导电类型的阳极区域形成在所述绝缘区域中，并且第二导电类型的阴极区域形成为与阳极区域接触的所述绝缘区域; 阳极区域和阴极区域限定与芯片电绝缘的热二极管。

公开(公告)号：US11482615B2

公开(公告)日：2022-10-25

申请号：US16869026

申请日：2020-05-07

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Giuseppe Cina′ ,  Antonio Giuseppe Grimaldi ,  Luigi Arcuri

IPC: H01L29/78 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66

Abstract: A vertical-conduction MOSFET device, includes: a semiconductor body, having a front side and a back side and having a first conductivity; a trench-gate region; a body region, having the first conductivity; a source region, having a second conductivity; and a drain region, having the second conductivity. The source region, body region, and drain region are aligned with one another along a first direction and define a channel area, which, in a conduction state of the MOSFET device, hosts a conductive channel. The drain region borders on a portion of the semiconductor body having the first conductivity, thus forming a junction diode, which, in an inhibition state of the MOSFET device, is adapted to cause a leakage current to flow outside the channel area.

公开(公告)号：US09190492B2

公开(公告)日：2015-11-17

申请号：US13967217

申请日：2013-08-14

Applicant: STMicroelectronics S.r.l.

Inventor： Giuseppe Consentino ,  Antonio Giuseppe Grimaldi ,  Monica Micciché

IPC: H01L29/66 ,  H01L29/423 ,  H01L29/78 ,  H01L29/10 ,  H01L21/336

CPC classification number: H01L29/7813 ,  H01L29/0878 ,  H01L29/1033 ,  H01L29/42376 ,  H01L29/66734 ,  H01L29/7831

Abstract: A semiconductor device that includes a semiconductor body, having a front side and a back side opposite to one another in a first direction of extension; a drift region, which extends in the semiconductor body, faces the front side, and has a first type of conductivity and a first value of doping; a body region, which has a second type of conductivity opposite to the first type of conductivity, extends in the drift region, and faces the front side of the semiconductor body; a first control terminal, which extends on the front side of the semiconductor body, at least partially overlapping, in the first direction of extension, the body region; and a second control terminal, which extends to a first depth in the semiconductor body, inside the body region, and is staggered with respect to the first control terminal.

Abstract translation: 一种半导体器件，包括半导体本体，其具有在第一延伸方向上彼此相对的前侧和后侧; 在半导体本体中延伸的漂移区域面向前侧，并且具有第一类型的导电性和第一掺杂值; 具有与第一导电类型相反的第二导电类型的主体区域在漂移区域中延伸并且面向半导体本体的前侧; 第一控制端子，其在半导体主体的前侧延伸，在第一延伸方向上至少部分地重叠; 以及第二控制端子，其在所述体区域内延伸到所述半导体主体中的第一深度，并且相对于所述第一控制端子交错。

公开(公告)号：US09711640B2

公开(公告)日：2017-07-18

申请号：US15081069

申请日：2016-03-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Davide Giuseppe Patti ,  Antonio Giuseppe Grimaldi

IPC: H01L29/78 ,  H01L29/66 ,  H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L21/8234

CPC classification number: H01L29/7813 ,  H01L21/823487 ,  H01L29/063 ,  H01L29/0856 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66734

Abstract: A vertical conduction integrated electronic device including: a semiconductor body; a trench that extends through part of the semiconductor body and delimits a portion of the semiconductor body, which forms a first conduction region having a first type of conductivity and a body region having a second type of conductivity, which overlies the first conduction region; a gate region of conductive material, which extends within the trench; an insulation region of dielectric material, which extends within the trench and is arranged between the gate region and the body region; and a second conduction region, which overlies the body region. The second conduction region is formed by a conductor.

公开(公告)号：US09257550B2

公开(公告)日：2016-02-09

申请号：US14788708

申请日：2015-06-30

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Donato Corona ,  Nicolo′ Frazzetto ,  Antonio Giuseppe Grimaldi ,  Corrado Iacono ,  Monica Micciche′

IPC: H01L29/78 ,  H01L29/423 ,  H01L29/66 ,  H01L21/02 ,  H01L21/04 ,  H01L29/10 ,  H01L29/16 ,  H01L29/732 ,  H01L29/808 ,  H01L29/165 ,  H01L29/06 ,  H01L29/08 ,  H01L29/40

CPC classification number: H01L29/7802 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/02502 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/046 ,  H01L29/0615 ,  H01L29/0634 ,  H01L29/0638 ,  H01L29/0821 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1004 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/165 ,  H01L29/402 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/66348 ,  H01L29/66712 ,  H01L29/66734 ,  H01L29/66916 ,  H01L29/7322 ,  H01L29/7813 ,  H01L29/8083

Abstract: An embodiment of an integrated electronic device formed in a body of semiconductor material, which includes: a substrate of a first semiconductor material, the first semiconductor material having a first bandgap; a first epitaxial region of a second semiconductor material and having a first type of conductivity, which overlies the substrate and defines a first surface, the second semiconductor material having a second bandgap wider than the first bandgap; and a second epitaxial region of the first semiconductor material, which overlies, and is in direct contact with, the first epitaxial region. The first epitaxial region includes a first buffer layer, which overlies the substrate, and a drift layer, which overlies the first buffer layer and defines the first surface, the first buffer layer and the drift layer having different doping levels.

公开(公告)号：US20140084360A1

公开(公告)日：2014-03-27

申请号：US14028364

申请日：2013-09-16

Applicant: STMicroelectronics S.r.l.

Inventor： Davide Giuseppe Patti ,  Monica Micciché ,  Antonio Giuseppe Grimaldi ,  Angela Longhitano ,  Salvatore Liotta

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/66666 ,  H01L27/0629 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/6609 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/861

Abstract: A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor material. A region of the gate region extends onto the main surface is insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into said insulated region, and a cathode region of the second type of conductivity is formed into said insulated region in contact with the anode region; the anode region and the cathode region define a thermal diode electrically insulated from the chip.

Abstract translation: 第一导电类型的半导体材料中的VTMOS晶体管包括第二导电类型的体区和第一类导电性的源区。 栅极区域通过主体区域延伸到主表面并与半导体材料绝缘。 延伸到主表面上的栅极区域的区域与栅极区域的其余部分绝缘。 第一导电类型的阳极区域形成在所述绝缘区域中，并且第二导电类型的阴极区域形成为与阳极区域接触的所述绝缘区域; 阳极区域和阴极区域限定与芯片电绝缘的热二极管。

公开(公告)号：US09882045B2

公开(公告)日：2018-01-30

申请号：US15606472

申请日：2017-05-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Davide Giuseppe Patti ,  Antonio Giuseppe Grimaldi

IPC: H01L29/78 ,  H01L29/66 ,  H01L21/8234 ,  H01L29/06 ,  H01L29/423 ,  H01L29/10

CPC classification number: H01L29/7813 ,  H01L21/823487 ,  H01L29/063 ,  H01L29/0856 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66734

Abstract: A vertical conduction integrated electronic device including: a semiconductor body; a trench that extends through part of the semiconductor body and delimits a portion of the semiconductor body, which forms a first conduction region having a first type of conductivity and a body region having a second type of conductivity, which overlies the first conduction region; a gate region of conductive material, which extends within the trench; an insulation region of dielectric material, which extends within the trench and is arranged between the gate region and the body region; and a second conduction region, which overlies the body region. The second conduction region is formed by a conductor.

公开(公告)号：US20170263758A1

公开(公告)日：2017-09-14

申请号：US15606472

申请日：2017-05-26

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Davide Giuseppe Patti ,  Antonio Giuseppe Grimaldi

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L21/8234

CPC classification number: H01L29/7813 ,  H01L21/823487 ,  H01L29/063 ,  H01L29/0856 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66734

Abstract: A vertical conduction integrated electronic device including: a semiconductor body; a trench that extends through part of the semiconductor body and delimits a portion of the semiconductor body, which forms a first conduction region having a first type of conductivity and a body region having a second type of conductivity, which overlies the first conduction region; a gate region of conductive material, which extends within the trench; an insulation region of dielectric material, which extends within the trench and is arranged between the gate region and the body region; and a second conduction region, which overlies the body region. The second conduction region is formed by a conductor.

公开(公告)号：US09673298B2

公开(公告)日：2017-06-06

申请号：US14949528

申请日：2015-11-23

Applicant: STMicroelectronics S.R.L.

Inventor： Antonio Giuseppe Grimaldi ,  Davide Giuseppe Patti ,  Monica Miccichè ,  Salvatore Liotta ,  Angela Longhitano

IPC: H01L21/8234 ,  H01L29/66 ,  H01L29/78 ,  H01L27/06 ,  H01L29/861 ,  H01L29/423

CPC classification number: H01L29/66666 ,  H01L27/0629 ,  H01L29/4236 ,  H01L29/42376 ,  H01L29/6609 ,  H01L29/66734 ,  H01L29/7804 ,  H01L29/7813 ,  H01L29/861

Abstract: A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor material. A region of the gate region extends onto the main surface is insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into said insulated region, and a cathode region of the second type of conductivity is formed into said insulated region in contact with the anode region; the anode region and the cathode region define a thermal diode electrically insulated from the chip.

公开(公告)号：US20170092757A1

公开(公告)日：2017-03-30

申请号：US15081069

申请日：2016-03-25

Applicant: STMICROELECTRONICS S.R.L.

Inventor： Davide Giuseppe Patti ,  Antonio Giuseppe Grimaldi

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/06 ,  H01L29/66

CPC classification number: H01L29/7813 ,  H01L21/823487 ,  H01L29/063 ,  H01L29/0856 ,  H01L29/0865 ,  H01L29/1095 ,  H01L29/41741 ,  H01L29/4236 ,  H01L29/66734

Abstract: A vertical conduction integrated electronic device including: a semiconductor body; a trench that extends through part of the semiconductor body and delimits a portion of the semiconductor body, which forms a first conduction region having a first type of conductivity and a body region having a second type of conductivity, which overlies the first conduction region; a gate region of conductive material, which extends within the trench; an insulation region of dielectric material, which extends within the trench and is arranged between the gate region and the body region; and a second conduction region, which overlies the body region. The second conduction region is formed by a conductor.