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公开(公告)号：US5576564A
公开(公告)日：1996-11-19
申请号：US365542
申请日：1994-12-28
IPC分类号： H01L21/8247 , H01L21/02 , H01L27/10 , H01L29/51 , H01L29/788 , H01L29/792 , H01L41/18 , H01L49/02 , H01L29/76
CPC分类号： H01L28/56 , H01L28/60 , H01L29/516 , H01L28/55
摘要： The present invention provides a substrate providing a ferroelectric crystal thin film which includes an electrode formed on a semiconductor single crystal substrate and a ferroelectric crystal thin film of Bi.sub.4 Ti.sub.3 O.sub.12 formed on the electrode through the intermediary of a buffer layer.
摘要翻译： 本发明提供一种提供铁电晶体薄膜的衬底，其包括形成在半导体单晶衬底上的电极和通过缓冲层形成在电极上的Bi 4 Ti 3 O 12的铁电晶体薄膜。
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2.发明授权公开(公告)号：US06440591B1
公开(公告)日：2002-08-27
申请号：US08646630
申请日：1996-05-08
IPC分类号： B32B900
CPC分类号： H01L28/56
摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a metal oxide buffer layer on a substrate, forming a first crystalline ferroelectric thin film thereon by means of a MOCVD method and forming a second ferroelectric thin film with a film thickness thicker than that of the first ferroelectric thin film thereon by means of the MOCVD method at a temperature lower than that of the first ferroelectric thin film. This producing method makes it possible to produce a ferroelectric thin film, where its surface is dense and even, a leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.
摘要翻译： 通过在基板上形成金属氧化物缓冲层的制造方法，通过MOCVD法在其上形成第一结晶性强电介质薄膜，并形成膜厚度比第二强铁电体薄膜的铁电薄膜被覆基板 在其上的第一铁电薄膜的温度低于第一铁电薄膜的温度，通过MOCVD方法。 该制造方法使得可以在较低的温度下制备其表面致密甚至漏电流性能优异并且显示足够大的剩余自发极化的铁电薄膜。
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公开(公告)号：US06232167B1
公开(公告)日：2001-05-15
申请号：US08968938
申请日：1997-11-12
IPC分类号： H01L218242
CPC分类号： H01L28/56
摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.
摘要翻译： 通过在晶体生长的衬底温度下通过MOCVD法在衬底上形成结晶薄膜并在结晶薄膜上形成铁电薄膜的方法获得铁电薄膜涂覆衬底，借助于 在成膜温度下的MOCVD方法，其低于结晶薄膜的成膜温度。 通过该制造方法，能够在较低温度下制造薄膜的表面致密且均匀，漏电流特性优异，剩余自发极化足够大的强电介质薄膜。
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4.发明授权
公开(公告)号：US5811181A
公开(公告)日：1998-09-22
申请号：US449701
申请日：1995-05-24
IPC分类号： C01G49/00 , C01G29/00 , C23C16/40 , C23C16/56 , H01B3/02 , H01B3/10 , H01B3/12 , H01B17/60 , H01B19/00 , H01L21/336 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L41/39 , H01L49/02 , B32B17/00
CPC分类号： C23C16/40 , C23C16/56 , Y10T428/252 , Y10T428/256
摘要： A close a-axis orientating film having a smooth surface and excellent ferroelectric characteristics is manufactured at a low temperature with preferable reproducibility to apply ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 to development of various kinds of devices such as a ferroelectric non-volatile memory, a pyroelectric sensor, etc. A ferroelectric Bi.sub.4 Ti.sub.3 O.sub.12 thin film is formed on a substrate through a titanium oxide buffer layer so that closeness and surface smoothness of the Bi.sub.4 Ti.sub.3 O.sub.12 thin film manufactured on the titanium oxide buffer layer can be improved.
摘要翻译： 在低温下制造具有光滑表面和优异的铁电特性的紧密的a轴取向膜，并且以铁电Bi4Ti3O12的优点的再现性可以用于开发各种诸如铁电非易失性存储器，热电传感器等的器件。 通过氧化钛缓冲层在基板上形成铁电Bi4Ti3O12薄膜，可以提高在氧化钛缓冲层上制造的Bi 4 Ti 3 O 12薄膜的接近度和表面平滑性。
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5.发明授权Ferroelectrics thin-film coated substrate and manufacture method thereof and nonvolatile memory comprising a ferroelectrics thinfilm coated substrate 失效铁电薄膜被覆基板及其制造方法以及包含铁电薄膜被覆基板的非易失性存储器
公开(公告)号：US5821005A
公开(公告)日：1998-10-13
申请号：US612584
申请日：1996-03-08
IPC分类号： C01G29/00 , C23C16/02 , C23C16/40 , H01B3/00 , H01B3/12 , H01B17/60 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L49/02 , B32B9/00
CPC分类号： C23C16/40 , C23C16/0272
摘要： A ferroelectrics thin-film coated substrate is manufactured in a low-temperature process by using a ferroelectrics having a dense and even surface and exhibiting a large residual spontaneous polarization. A ferroelectrics thin-film coated substrate has a structure with a buffer layer, a growth layer allowing a ferroelectrics thin-film to grow, and a ferroelectrics thin-film made of a ferroelectric material having a layered crystalline structure expressed in the chemical formula Bi.sub.2 A.sub.m-1 B.sub.m O.sub.3m+3 (A is selected from Na.sup.1+, K.sup.1+, Pb.sup.2+, Ca.sup.2+, Sr.sup.2+, Ba.sup.2+, Bi.sup.3+ and the like, B is selected from Fe.sup.3+, Ti.sup.4+, Nb.sup.5+, Ta.sup.5+, W.sup.6+ and Mo.sup.6+, and m is an integer not less than 1) formed in succession.
摘要翻译： 通过使用具有致密且均匀的表面并表现出大的残余自发极化的铁电体，在低温工艺中制造铁电薄膜涂覆基板。 铁电薄膜被覆基板具有缓冲层，允许铁电体薄膜生长的生长层的结构，以及由化学式Bi2 Am表示的具有层状结晶结构的铁电体的铁电体薄膜 -1 Bm O3m + 3（A选自Na1 +，K1 +，Pb2 +，Ca2 +，Sr2 +，Ba2 +，Bi3 +等，B选自Fe3 +，Ti4 +，Nb5 +，Ta5 +，W6 +和Mo6 +，m为整数 小于1）。
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6.发明授权
公开(公告)号：US5757061A
公开(公告)日：1998-05-26
申请号：US643302
申请日：1996-05-08
IPC分类号： C01G29/00 , C30B29/32 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/822 , H01L21/8246 , H01L21/8247 , H01L27/04 , H01L27/10 , H01L27/105 , H01L29/788 , H01L29/792 , H01L37/02 , H01L49/02 , H01L29/00 , H01L29/76 , H01L29/94 , H01L31/062
CPC分类号： H01L28/56
摘要： A ferroelectric thin film coated substrate is obtained by a producing method of forming a crystalline thin film on a substrate by means of a MOCVD method at a substrate temperature at which crystal grows and of forming a ferroelectric thin film on the crystalline thin film by means of the MOCVD method at a film forming temperature, which is lower than the film forming temperature of the crystalline thin film. This producing method makes it possible to produce a ferroelectric thin film, where a surface of the thin film is dense and even, leakage current properties are excellent and sufficiently large remanent spontaneous polarization is shown, at a lower temperature.
摘要翻译： 通过在晶体生长的衬底温度下通过MOCVD法在衬底上形成结晶薄膜并在结晶薄膜上形成铁电薄膜的方法获得铁电薄膜涂覆衬底，借助于 在成膜温度下的MOCVD方法，其低于结晶薄膜的成膜温度。 通过该制造方法，能够在较低温度下制造薄膜的表面致密且均匀，漏电流特性优异，剩余自发极化足够大的强电介质薄膜。
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7.发明授权Method for producing ferroelectric film element, and ferroelectric film element and ferroelectric memory element produced by the method 失效制造铁电体膜元件的方法，以及通过该方法制造的铁电体膜元件和铁电存储元件
公开(公告)号：US5851841A
公开(公告)日：1998-12-22
申请号：US713651
申请日：1996-09-13
IPC分类号： H01G4/33 , H01L21/02 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L21/8247 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L29/92 , H01L37/02 , H01L41/09 , H01L41/187 , H01L21/70 , H01L27/00
CPC分类号： H01L28/40 , H01L21/31691 , H01L28/55
摘要： A method for producing a ferroelectric element having a lower electrode layer, a ferroelectric film and an upper electrode layer provided in sequence on the substrate is disclosed. The method comprising the step of applying a metal-contained precursor solution to the surface of the lower electrode layer formed on the substrate, the step of drying the applied precursor solution to remove the solution alone by heating it, a first heat treatment step for heating the dried precursor to form a ferroelectric film, and a second heat treatment step for heating the formed film element in a gas-pressurized atmosphere of lower than 1 atmosphere after forming an upper electrode layer on the ferroelectric film.
摘要翻译： 公开了一种在基板上依次设置具有下电极层，铁电体膜和上电极层的铁电体元件的制造方法。 该方法包括以下步骤：将金属含有的前体溶液施加到形成在基板上的下电极层的表面，干燥所施加的前体溶液以通过加热单独除去溶液的步骤，加热第一热处理步骤 所述干燥前体形成铁电体膜;以及第二热处理步骤，用于在所述强电介质膜上形成上电极层之后，在低于1大气压的气体加压气氛中加热所述成膜元件。
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公开(公告)号：US5593495A
公开(公告)日：1997-01-14
申请号：US435135
申请日：1995-05-05
申请人： Yoshiyuki Masuda , Ryusuke Kita , Hisako Arai , Noboru Ohtani , Masayoshi Koba
发明人： Yoshiyuki Masuda , Ryusuke Kita , Hisako Arai , Noboru Ohtani , Masayoshi Koba
IPC分类号： C01B13/14 , C01G21/00 , C01G23/00 , C23C18/12 , C30B5/00 , H01B3/00 , H01L37/02 , H01L41/39 , C30B1/10
CPC分类号： C23C18/1225 , C23C18/1216 , C23C18/1254 , C30B29/32 , C30B5/00
摘要： In a method for manufacturing a thin film of metal-oxide dielectric, a precursor solution in a sol state is synthesized in a first step. This precursor solution is composed of component elements of materials of the composite metal-oxide dielectric to be manufactured. In a second step, this precursor solution is made a thin film by spin coating. In a third step, this thin film in the sol state is dried to convert it into a thin film of dry gel. Thereafter, in a fourth step, the thin film of dry gel is subjected to a heat treatment for thermally decomposing and removing organic substances in the dry gel thin film and simultaneously crystallizing this gel state thin film.
摘要翻译： 在金属氧化物电介质薄膜的制造方法中，在第一工序中合成溶胶状态的前体溶液。 该前体溶液由待制造的复合金属 - 氧化物电介质的材料的组成元素组成。 在第二步中，通过旋涂将该前体溶液制成薄膜。 在第三步骤中，将该溶胶状的薄膜干燥，将其转变为干燥凝胶的薄膜。 此后，在第四步骤中，对干燥凝胶薄膜进行热分解，除去干凝胶薄膜中的有机物质，同时使该凝胶态薄膜结晶。
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公开(公告)号：US5856242A
公开(公告)日：1999-01-05
申请号：US672233
申请日：1996-06-27
申请人： Hisako Arai , Ryusuke Kita , Yoshiyuki Masuda , Noboru Ohtani , Yoshiyuki Matsu , Masayoshi Koba
发明人： Hisako Arai , Ryusuke Kita , Yoshiyuki Masuda , Noboru Ohtani , Yoshiyuki Matsu , Masayoshi Koba
IPC分类号： C04B35/46 , C01B13/14 , C23C14/08 , C23C14/34 , C23C14/35 , C23C14/54 , C23C14/58 , H01L21/283 , H01L21/31
CPC分类号： C23C14/5806 , C23C14/088 , C23C14/5853
摘要： A method for preparing an oxide dielectric thin film, for use in a dielectric thin film device, is described. Briefly, a film forming chamber is heated, and a thin film of dielectric, about 200 nm thick, is formed by sputtering or another deposition method. After the film is formed, evacuation of the film forming chamber is suspended, and oxygen gas is introduced into the chamber. The film is oxidized after its formation by maintaining the film in the oxygen atmosphere for a period of time, which can include cooling steps. The resulting dielectric thin film has excellent dielectric properties, such as a high dielectric constant and great dielectric strength.
摘要翻译： 描述了用于制造用于电介质薄膜器件的氧化物电介质薄膜的方法。 简而言之，加热成膜室，通过溅射或其它沉积方法形成约200nm厚的电介质薄膜。 在形成膜之后，将成膜室抽真空，并将氧气引入室中。 通过将膜在氧气氛中保持一段时间，其形成后膜被氧化，这可以包括冷却步骤。 所得的电介质薄膜具有优良的介电特性，例如介电常数高，介电强度大。
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10.发明授权
公开(公告)号：US5998819A
公开(公告)日：1999-12-07
申请号：US132896
申请日：1998-08-12
申请人： Seiichi Yokoyama , Yasuyuki Ito , Maho Ushikubo , Masayoshi Koba
发明人： Seiichi Yokoyama , Yasuyuki Ito , Maho Ushikubo , Masayoshi Koba
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/28 , H01L21/314 , H01L21/316 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792 , H01L29/72
CPC分类号： H01L27/11502 , H01L21/28291 , H01L21/31691 , H01L27/11507 , H01L28/56 , H01L29/78391
摘要： A thin ferroelectric film element comprises upper and lower thin electrode films and a thin ferroelectric film formed on a substrate, wherein the thin ferroelectric film comprises at least three layers in which at least one layer has a composition of constituent elements different from those of the other layers and a resistivity higher than that of the other layers, and at least two layers of the others are the same composition of constituent element.
摘要翻译： 薄铁电薄膜元件包括上和下薄电极薄膜和形成在基底上的薄铁电薄膜，其中薄铁电薄膜包括至少三层，其中至少一层具有不同于其它层的构成元素组成 层和电阻率高于其它层的电阻率，并且其它层的至少两层是组成元素的相同组成。
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