公开(公告)号：US20150034008A1

公开(公告)日：2015-02-05

申请号：US14183963

申请日：2014-02-19

Applicant: Samsung Display Co., Ltd.

Inventor： Choel-Min JANG ,  Myung-Soo Huh ,  Suk-Won Jung ,  Sung-Hun Key ,  In-Kyo Kim

IPC: C23C16/52 ,  C23C16/455

CPC classification number: C23C16/52 ,  C23C16/4401 ,  C23C16/45527 ,  C23C16/45551 ,  C23C16/45561

Abstract: Provided is a vapor deposition apparatus including a deposition unit including a plurality of deposition modules disposed parallel to each other and a substrate mounting unit located below the deposition unit, on which a substrate is mounted. In this case, each of the plurality of deposition modules includes a nozzle configured to selectively inject a raw gas and a purge gas toward the substrate mounting unit, and the nozzle injects the raw gas while the substrate mounting unit is being located below the nozzle.

Abstract translation: 本发明提供一种蒸镀装置，其特征在于，包括具有彼此平行配置的多个沉积模块的沉积单元和位于所述沉积单元的下方的基板安装单元，基板安装在所述沉积单元上。 在这种情况下，多个沉积模块中的每一个都包括一个喷嘴，该喷嘴构造成选择性地将原料气体和净化气体朝向基板安装单元喷射，并且喷嘴在基板安装单元位于喷嘴下方时喷射原料气体。

公开(公告)号：US20140174360A1

公开(公告)日：2014-06-26

申请号：US14020848

申请日：2013-09-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Jin-Kwang KIM ,  In-Kyo KIM ,  Choel-Min JANG

IPC: H01L51/56

CPC classification number: H01L51/56 ,  C23C16/452 ,  H01J37/32357

Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

Abstract translation: 一种用于在基板上形成沉积层的气相沉积装置，所述气相沉积装置包括：供给单元，被配置为接收第一源气体，与供给单元连接的反应空间，反应空间中的等离子体发生器，第一注入单元 被配置为将沉积源材料注入到所述基板，所述沉积源材料包括所述第一源气体和所述反应空间中的细丝单元，所述灯丝单元连接到电源。

公开(公告)号：US20180342708A1

公开(公告)日：2018-11-29

申请号：US16045909

申请日：2018-07-26

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Jin-Kwang KIM ,  In-Kyo KIM ,  Choel-Min JANG

IPC: H01L51/56 ,  H01J37/32 ,  C23C16/452

Abstract: A vapor deposition apparatus for forming a deposition layer on a substrate, the vapor deposition apparatus includes a supply unit configured to receive a first source gas, a reaction space connected to the supply unit, a plasma generator in the reaction space, a first injection unit configured to inject a deposition source material to the substrate, the deposition source material including the first source gas, and a filament unit in the reaction space, the filament unit being connected to a power source.

公开(公告)号：US20150031167A1

公开(公告)日：2015-01-29

申请号：US14269175

申请日：2014-05-04

Applicant: Samsung Display Co., Ltd.

Inventor： Myung-Soo HUH ,  Suk-Won JUNG ,  Sung-Chul KIM ,  Sang-Hyuk HONG ,  Choel-Min JANG

IPC: H01L51/52 ,  H01L21/02 ,  H01L21/285 ,  H01L51/56

CPC classification number: H01L21/28506 ,  C23C16/452 ,  C23C16/45565 ,  C23C16/45578 ,  C23C16/458 ,  C23C16/509 ,  H01J37/32357 ,  H01J37/3244 ,  H01L21/02274 ,  H01L51/001 ,  H01L51/56

Abstract: A deposition apparatus for performing a deposition process on a substrate includes: an injection unit including a plasma generating member which receives a raw material gas and converts the raw material gas to a deposition source material in a radical form; and a plasma processor disposed adjacent to the injection unit and facing a side of the injection unit, wherein the plasma processor performs a plasma process in a direction facing the substrate.

Abstract translation: 用于在基板上进行沉积处理的沉积装置包括：注入单元，其包括等离子体产生元件，该等离子体产生元件接纳原料气体，并将原料气体以基本形式转化为沉积源材料; 以及等离子体处理器，其与所述注入单元相邻并且面向所述注入单元的一侧，其中所述等离子体处理器在面向所述基板的方向上执行等离子体处理。

公开(公告)号：US20140041590A1

公开(公告)日：2014-02-13

申请号：US13710310

申请日：2012-12-10

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Choel-Min JANG ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Sung-Yong LEE ,  Cheol-Rae Jo ,  In-Kyo KIM ,  Sung-Hun KEY

IPC: C23C16/00

CPC classification number: C23C16/00 ,  B01F3/04 ,  C23C16/4481 ,  C23C16/4482

Abstract: A canister includes an accommodation portion for accommodating a liquid material; an outlet pipe that is connected to the accommodation portion so as to discharge a gas material obtained by vaporizing the liquid material; a blocking cover that is connected to an upper surface of the accommodation portion; and a plurality of baffle plates that are disposed in the accommodation portion and are spaced apart from each other. The canister further includes a restrictor including a main body member that is disposed between the plurality of baffle plates and the blocking cover and is connected to an internal surface of the accommodation portion, an extension member extending from the main body member, and a through portion that is formed through the main body member and the extension member. A deposition procedure using the canister is efficiently performed and characteristics of a deposition layer are easily improved.

Abstract translation: 罐包括用于容纳液体材料的容纳部分; 出口管，其连接到容纳部分，以排出通过汽化液体材料获得的气体材料; 阻挡盖，其连接到所述容纳部的上表面; 以及设置在容纳部分中并彼此间隔开的多个挡板。 所述罐还包括限制器，所述限制器包括主体部件，所述主体部件设置在所述多个挡板和所述阻挡盖之间，并且连接到所述容纳部的内表面，从所述主体部件延伸的延伸部件， 其通过主体构件和延伸构件形成。 可以有效地进行使用罐的沉积工序，容易地提高沉积层的特性。

公开(公告)号：US20160322574A1

公开(公告)日：2016-11-03

申请号：US15205815

申请日：2016-07-08

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jin-Kwang KIM ,  Seung-Yong SONG ,  Myung-Soo HUH ,  Suk-Won JUNG ,  Choel-Min JANG ,  Jae-Hyun KIM ,  Sung-Chul KIM

IPC: H01L51/00 ,  C23C16/50 ,  C23C16/455 ,  C23C16/44 ,  H01L51/56 ,  H01L51/52

CPC classification number: H01L51/0021 ,  C23C14/24 ,  C23C14/564 ,  C23C16/4401 ,  C23C16/4412 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/50 ,  H01B13/30 ,  H01L27/3244 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323

Abstract: A vapor deposition apparatus in which a deposition process is performed by moving a substrate, the vapor deposition apparatus including a supply unit that injects at least one raw material gas towards the substrate, and a blocking gas flow generation unit that is disposed corresponding to the supply unit and generates a gas-flow that blocks a flow of the raw material gas.

Abstract translation: 一种气相沉积装置，其中通过移动基板进行沉积工艺，所述气相沉积设备包括向基板注入至少一种原料气体的供应单元和对应于供应设置的阻塞气体流产生单元 并且产生阻挡原料气体流动的气流。

公开(公告)号：US20150050421A1

公开(公告)日：2015-02-19

申请号：US14296029

申请日：2014-06-04

Applicant: Samsung Display Co., Ltd.

Inventor： Choel-Min JANG ,  Sung-Hun KEY ,  In-Kyo KIM ,  Suk-Won JUNG ,  Myung-Soo HUH

IPC: C23C16/455 ,  C23C16/458

CPC classification number: C23C16/45574 ,  C23C16/45551 ,  C23C16/458

Abstract: A method of depositing a layer includes spraying a source gas and a reactant gas onto a substrate disposed on a susceptor unit using at least one source gas spray nozzle and at least one reactant gas nozzle to form a first source gas region and a first reactant gas region on the substrate, respectively, moving the susceptor unit by a distance corresponding to a width of the source gas spray nozzle or a width of the reactant gas spray nozzle in a first direction, and spraying the source gas and the reactant gas onto the first reactant gas region and the first source gas region using the source gas spray nozzle and the reactant gas nozzle, respectively, to form a first monolayer.

Abstract translation: 沉积层的方法包括使用至少一个源气体喷嘴和至少一个反应气体喷嘴将源气体和反应气体喷射到设置在基座单元上的基板上，以形成第一源气体区域和第一反应气体 区域，分别使基座单元沿着第一方向移动对应于源气体喷嘴的宽度的距离或反应气体喷嘴的宽度，并将源气体和反应气体喷射到第一方向上 反应气体区域和第一源气体区域分别使用源气体喷嘴和反应气体喷嘴形成第一单层。