公开(公告)号：US20240023394A1

公开(公告)日：2024-01-18

申请号：US18373277

申请日：2023-09-27

Applicant: Samsung Display Co., Ltd.

Inventor： Soyoung Koo ,  Eoksu Kim ,  Hyungjun Kim ,  Yunyong Nam ,  Junhyung Lim ,  Kyungjin Jeon

IPC: H10K59/131 ,  G09G3/3291 ,  G09G3/3266 ,  H10K59/122

CPC classification number: H10K59/131 ,  G09G3/3291 ,  G09G3/3266 ,  H10K59/122 ,  G09G2300/0426 ,  H10K59/1201

Abstract: A display apparatus is disclosed that includes contact holes formed to expose at least a portion of a conductive layer or a semiconductor layer without damage to the surface of the conductive layer or the semiconductor layer, and a method of manufacturing the display apparatus. The display apparatus includes a substrate, a conductive mound arranged on the substrate, a first insulating mound arranged on the substrate, and a semiconductor layer including a first region arranged on the conductive mound, and a second region arranged on the first insulating mound. The second region of the semiconductor layer substantially covers an upper surface of the first insulating mound.

公开(公告)号：US11871596B2

公开(公告)日：2024-01-09

申请号：US17082379

申请日：2020-10-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

IPC: H10K50/805 ,  H10K77/10 ,  H10B10/00 ,  G09G3/32 ,  G09G3/3233 ,  H10K59/121 ,  H10K71/00 ,  H10K50/30 ,  H10K59/12 ,  H01L51/52 ,  H01L51/00 ,  H01L27/11 ,  H01L27/32

CPC classification number: H01L51/5203 ,  G09G3/32 ,  G09G3/3233 ,  H01L27/1108 ,  H01L27/3262 ,  H01L51/0096 ,  G09G2300/0426 ,  G09G2300/0814 ,  G09G2300/0842 ,  G09G2300/0861 ,  G09G2300/0866 ,  G09G2310/0245 ,  G09G2310/0262 ,  H01L27/3265 ,  H01L51/0023 ,  H01L51/5296 ,  H01L2227/323

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US11677030B2

公开(公告)日：2023-06-13

申请号：US17158824

申请日：2021-01-26

Applicant: Samsung Display Co., Ltd.

Inventor： Sangwoo Sohn ,  Yeonkeon Moon ,  Myounghwa Kim ,  Taesang Kim ,  Geunchul Park ,  Joonseok Park ,  Junhyung Lim ,  Hyelim Choi

IPC: H01L29/786 ,  H01L27/32 ,  H01L29/24 ,  H01L27/12 ,  H01L21/8234

CPC classification number: H01L29/7869 ,  H01L21/823412 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/3244 ,  H01L29/24 ,  H01L29/78696 ,  H01L27/3262

Abstract: A thin-film transistor substrate includes: an active layer on a substrate, the active layer including: a first semiconductor material layer; a conductor layer on the first semiconductor material layer, and including a metal element; and a second semiconductor material layer on the conductor layer; a gate insulating layer on the active layer; and a gate electrode on the gate insulating layer, and at least partially overlapping with the active layer.

公开(公告)号：US11171193B2

公开(公告)日：2021-11-09

申请号：US16836490

申请日：2020-03-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Dohyun Kwon ,  Jonghan Jeong ,  Jonghyun Choi ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L27/32 ,  G09G3/3225 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3275 ,  H01L27/12 ,  H01L29/786

Abstract: A semiconductor device includes a base substrate, a first transistor disposed on the base substrate, the first transistor including a first input electrode, a first output electrode, a first control electrode, and a first semiconductor pattern including a crystalline semiconductor, a second transistor disposed on the base substrate, the second transistor including a second input electrode, a second output electrode, a second control electrode, and a second semiconductor pattern including an oxide semiconductor, a plurality of insulating layers disposed on the base substrate, and an upper electrode disposed on the first control electrode with at least one insulating layer of the plurality of insulating layers interposed between the upper electrode and the first control electrode. The upper electrode overlaps the first control electrode and forms a capacitor with the first control electrode.

公开(公告)号：US10790467B2

公开(公告)日：2020-09-29

申请号：US16836005

申请日：2020-03-31

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

IPC: H01L51/52 ,  H01L27/11 ,  G09G3/32 ,  G09G3/3233 ,  H01L27/32 ,  H01L51/00

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US10673008B2

公开(公告)日：2020-06-02

申请号：US16459060

申请日：2019-07-01

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Eoksu Kim ,  Kyoungseok Son ,  Junhyung Lim ,  Jihun Lim

IPC: H01L51/52 ,  H01L51/00 ,  H01L27/11 ,  G09G3/32 ,  G09G3/3233 ,  H01L27/32

Abstract: A display device includes a base substrate, a first transistor, a second transistor, an organic light emitting diode, and a capacitor electrically connected to the first thin film transistor. The first transistor includes a first semiconductor pattern below a first interlayer insulation layer and a first control electrode above the first interlayer insulation layer and below a second interlayer insulation layer. The second transistor includes a second control electrode above the first interlayer insulation layer and below the second interlayer insulation layer. A second semiconductor pattern is above the second interlayer insulation layer.

公开(公告)号：US20190074303A1

公开(公告)日：2019-03-07

申请号：US16120898

申请日：2018-09-04

Applicant: Samsung Display Co., Ltd. ,  Yonsei University Industry Foundation (Yonsei UIF)

Inventor： Taesang Kim ,  Hyunjae Kim ,  Junhyung Lim ,  Youngjun Tak

IPC: H01L27/12 ,  H01L27/32 ,  H01L27/24 ,  H01L51/50

Abstract: A method of manufacturing a thin film transistor substrate may include forming a gate electrode on a base substrate, forming a gate insulation layer on the base substrate, the gate insulation layer covering the gate electrode, performing a simultaneous ultraviolet ray irradiation and thermal treatment (SUT) process by irradiating an ultraviolet ray at the gate insulation layer and supplying heat to the gate insulation layer at substantially the same time, forming an active pattern on the gate insulation layer, the active pattern overlapping the gate electrode, and forming a source electrode and a drain electrode on the gate insulation layer, the source electrode and the drain electrode being electrically connected to the active pattern.

公开(公告)号：US20180366586A1

公开(公告)日：2018-12-20

申请号：US15871468

申请日：2018-01-15

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Kyoungseok Son ,  Eoksu Kim ,  Jaybum Kim ,  Junhyung Lim ,  Jihun Lim

IPC: H01L29/786 ,  H01L27/12 ,  H01L27/32 ,  H01L23/485

Abstract: A display apparatus includes: a substrate on which a first area, a second area spaced apart from the first area, and a bending area between a first area and a second area and bent along a bending axis are defined; a first thin-film transistor (“TFT”) and a second TFT; and a first conductive layer and a second conductive layer. The first TFT includes: a first active layer including polycrystalline silicon; a first gate electrode; and a first electrode disposed at a level which is the same as a level of the first conductive layer, and the second TFT includes: a second active layer including an oxide semiconductor; a second gate electrode; and a second electrode disposed at a level which is the same as a level of the second conductive layer.

公开(公告)号：US11908924B2

公开(公告)日：2024-02-20

申请号：US17652843

申请日：2022-02-28

Applicant: SAMSUNG DISPLAY CO., LTD.

Inventor： Jaybum Kim ,  Seryeong Kim ,  Junhyung Lim ,  Taesang Kim

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/146 ,  H01L29/04 ,  H01L27/12 ,  H10K59/00 ,  H10K59/121 ,  H10K59/123

CPC classification number: H01L29/6675 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H01L27/14692 ,  H01L29/04 ,  H01L29/66969 ,  H01L29/7869 ,  H10K59/00 ,  H10K59/1213 ,  H10K59/1216 ,  H10K59/123

Abstract: A semiconductor device includes a base substrate. A first thin-film transistor is disposed on the base substrate. The first thin-film transistor includes a first input electrode, a first output electrode, a first semiconductor pattern disposed below a first insulating layer, and a first control electrode disposed on the first insulating layer and below a second insulating layer. A second thin-film transistor includes a second input electrode, a second output electrode, a second semiconductor pattern disposed on the second insulating layer, and a second control electrode disposed on an insulating pattern formed on the second semiconductor pattern and exposes a portion of the second semiconductor pattern. The first semiconductor pattern includes a crystalline semiconductor. The second semiconductor pattern incudes an oxide semiconductor. The first semiconductor pattern, the first control electrode, the second semiconductor pattern, and the second control electrode are overlapped.

公开(公告)号：US11818923B2

公开(公告)日：2023-11-14

申请号：US17353640

申请日：2021-06-21

Applicant: Samsung Display Co., Ltd.

Inventor： Jaybum Kim ,  Myeongho Kim ,  Yeonhong Kim ,  Kyoungseok Son ,  Seungjun Lee ,  Seunghun Lee ,  Junhyung Lim

IPC: H01L27/32 ,  H01L51/56 ,  H10K59/124 ,  H10K71/00 ,  H01L27/12 ,  H10K59/121 ,  H01L25/18 ,  H01L25/16 ,  H10K59/12 ,  H10K59/65

CPC classification number: H10K59/124 ,  H01L27/1225 ,  H01L27/1251 ,  H01L27/1255 ,  H10K59/1213 ,  H10K59/1216 ,  H10K71/00 ,  H01L25/167 ,  H01L25/18 ,  H10K59/1201 ,  H10K59/121 ,  H10K59/65

Abstract: A display device is disclosed that includes: a substrate comprising a display area and a component area including a transmission area; a first thin-film transistor comprising a first semiconductor layer and a first gate electrode, the first semiconductor layer including a silicon semiconductor; a first insulating layer covering the first gate electrode; a second thin-film transistor comprising a second semiconductor layer arranged on the first insulating layer and a second gate electrode, the second semiconductor layer including an oxide semiconductor; a second insulating layer covering the second gate electrode and having a transmission hole overlapping the transmission area; an intermediate insulating layer between the first insulating layer and the second insulating layer; a conductive pattern between the intermediate insulating layer and the first insulating layer; and a display element arranged on the second insulating layer, wherein the transmission hole exposes an upper surface of the intermediate insulating layer.