SEMICONDUCTOR PACKAGE, AND PACKAGE ON PACKAGE HAVING THE SAME

    公开(公告)号:US20210257305A1

    公开(公告)日:2021-08-19

    申请号:US17024852

    申请日:2020-09-18

    Abstract: A semiconductor package includes: a redistribution layer including a plurality of redistribution insulating layers, a plurality of redistribution line patterns that constitute lower wiring layers, and a plurality of redistribution vias that are connected to some of the plurality of redistribution line patterns while penetrating at least one of the plurality of redistribution insulating layers; at least one semiconductor chip arranged on the redistribution layer; an expanded layer surrounding the at least one semiconductor chip on the redistribution layer; and a cover wiring layer including at least one base insulating layer, a plurality of wiring patterns that constitute upper wiring layers, and a plurality of conductive vias that are connected to some of the plurality of wiring patterns while penetrating the at least one base insulating layer.

    SEMICONDUCTOR PACKAGE
    3.
    发明公开

    公开(公告)号:US20240128174A1

    公开(公告)日:2024-04-18

    申请号:US18380424

    申请日:2023-10-16

    Abstract: A semiconductor package is provided including: a redistribution substrate having an upper surface and a lower surface, opposite to each other, and including redistribution layers; a semiconductor chip disposed on the upper surface of the redistribution substrate and electrically connected to the redistribution layers; an upper encapsulant encapsulating at least a portion of the semiconductor chip and disposed on the upper surface of the redistribution substrate; a passive component disposed on the lower surface of the redistribution substrate and electrically connected to the redistribution layer; a lower encapsulant encapsulating at least a portion of the passive component and disposed on the lower surface of the redistribution substrate, and having a plurality of openings exposing lowermost redistribution layers among the redistribution layers; and a plurality of bumps respectively disposed within the plurality of openings, the bumps respectively including a first portion in contact with the lowermost redistribution layers and a second portion extending from the first portion and protruding partially downwardly of the plurality of openings.

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