公开(公告)号：US20240178188A1

公开(公告)日：2024-05-30

申请号：US18363140

申请日：2023-08-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung-Sung KANG ,  Kyong Hwan KOH ,  Jin-Woo PARK ,  Chung Sun LEE ,  Hyeon Jun JIN

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/31 ,  H01L23/48 ,  H01L23/498

CPC classification number: H01L25/0655 ,  H01L23/3128 ,  H01L23/481 ,  H01L23/49816 ,  H01L24/16 ,  H01L2224/16225 ,  H01L2924/15311 ,  H01L2924/182

Abstract: Semiconductor packages and methods of fabricating the same are provided. The semiconductor package includes a first package substrate including a first area, a first semiconductor chip mounted on the first area, a second package substrate disposed on an upper surface of the first semiconductor chip and including a second area and a first hole penetrating through the second area, a second semiconductor chip mounted on the second area, a connection member electrically connecting the first package substrate and the second package substrate and between the first package substrate and the second package substrate, and a mold film covering the second semiconductor chip on the second package substrate, filling the first hole, and covering the first semiconductor chip and the connection member on the first package substrate.

公开(公告)号：US20240072000A1

公开(公告)日：2024-02-29

申请号：US18455922

申请日：2023-08-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jin-Woo PARK ,  Un-Byoung KANG ,  Chung Sun LEE

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/498 ,  H01L25/10

CPC classification number: H01L25/0655 ,  H01L23/49822 ,  H01L23/49838 ,  H01L24/16 ,  H01L24/32 ,  H01L24/73 ,  H01L25/105 ,  H01L2224/16227 ,  H01L2224/16238 ,  H01L2224/32225 ,  H01L2224/73204 ,  H01L2225/1023 ,  H01L2225/1035 ,  H01L2225/1058 ,  H01L2924/182

Abstract: A semiconductor package includes a substrate; a substrate pad on the substrate; a first semiconductor chip and a second semiconductor chip on the substrate; a connective terminal between the substrate pad and the first semiconductor chip and between the substrate pad and the second semiconductor chip; a dummy pad on the substrate, and spaced apart from the substrate pad, wherein the dummy pad is between the first semiconductor chip and the second semiconductor chip; and an underfill material layer interposed between the substrate and the first semiconductor chip and between the substrate and the second semiconductor chip, wherein the dummy pad and the substrate pad include a same material.

公开(公告)号：US20230021152A1

公开(公告)日：2023-01-19

申请号：US17665652

申请日：2022-02-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyun Su HWANG ,  Jun Yun KWEON ,  Jum Yong PARK ,  Sol Ji SONG ,  Dong Joon OH ,  Chung Sun LEE

IPC: H01L23/00

Abstract: A semiconductor device includes an insulating layer on a substrate; a via extending from within the substrate and extending through one face of the substrate and a bottom face of a trench defined in the insulating layer such that a portion of a sidewall and a top face of the via are exposed through the substrate; and a pad contacting the exposed portion of the sidewall and the top face of the via. The pad fills the trench. The insulating layer includes a passivation layer on the substrate, and a protective layer is on the passivation layer. An etch stop layer is absent between the passivation layer and the protective layer. A vertical level of a bottom face of the trench is higher than a vertical level of one face of the substrate and is lower than a vertical level of a top face of the passivation layer.

公开(公告)号：US20200066545A1

公开(公告)日：2020-02-27

申请号：US16293697

申请日：2019-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Il Hwan KIM ,  Un Byoung KANG ,  Chung Sun LEE

IPC: H01L21/48 ,  H01L21/56

Abstract: A method of manufacturing a semiconductor package includes forming a plurality of trenches at a first surface of a silicon substrate, forming a conductive pad inside each of the plurality of trenches, forming a redistribution layer on the first surface of the silicon substrate, forming an external connection terminal on a first surface of the redistribution layer, removing the silicon substrate to expose each conductive pad, mounting a semiconductor chip to be connected to the conductive pads, and forming an encapsulant to cover at least one surface of the semiconductor chip.

公开(公告)号：US20190305202A1

公开(公告)日：2019-10-03

申请号：US16356283

申请日：2019-03-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tan SAKONG ,  Yong Il KIM ,  Han Kyu SEONG ,  Ji Hye YEON ,  Chung Sun LEE ,  Ji Hwan HWANG

IPC: H01L33/62 ,  H01L25/075 ,  H01L27/12 ,  H01L23/00

Abstract: A light emitting diode display device includes a display board comprising a plurality of unit pixels, a drive circuit board including a plurality of drive circuit regions corresponding to the plurality of unit pixels, and a plurality of bumps interposed between the plurality of unit pixels and the plurality of drive circuit regions. The plurality of unit pixels comprises a first unit pixel including a first P electrode. The plurality of drive circuit regions comprises a first drive circuit region corresponding to the first unit pixel and a first pad connected to a first drive transistor, the plurality of bumps includes a first solder in contact with the first pad, and a first bump on the first solder and including a first filler in contact with the first P electrode, the first solder includes at least one of tin and silver, and the first filler includes copper or nickel.