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    NONVOLATILE MEMORY DEVICES AND OPERATING METHODS THEREOF
    2.
    发明申请
    NONVOLATILE MEMORY DEVICES AND OPERATING METHODS THEREOF 有权
    非易失性存储器件及其操作方法

    公开(公告)号：US20130107629A1

    公开(公告)日：2013-05-02

    申请号：US13721963

    申请日：2012-12-20

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sunil SHIM ,  Jaehoon JANG ,  Donghyuk CHAE ,  Youngho LIM ,  Hansoo KIM ,  Jaehun JEONG

    IPC: G11C16/30 ,  G11C16/10 ,  G11C16/34

    CPC classification number: G11C16/30 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3418 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

    Abstract: According to example embodiments of inventive concepts, a nonvolatile memory device includes a memory cell array including a plurality of memory cells; a word line driver configured to at least one of select and unselect a plurality of word lines connected with the plurality of memory cells, respectively, and to supply voltages to the plurality of word lines; and a read/write circuit configured to apply bias voltages to a plurality of bit lines connected with the plurality of memory cells. The read/write circuit may be configured to adjust levels of the bias voltages applied to the plurality of bit lines according to location of a selected word line among the plurality of word lines.

    Abstract translation: 根据发明构思的示例实施例，非易失性存储器件包括包括多个存储器单元的存储单元阵列; 字线驱动器，被配置为分别选择和取消选择与所述多个存储器单元连接的多个字线中的至少一个，并向所述多个字线提供电压; 以及读/写电路，被配置为向与多个存储单元连接的多个位线施加偏置电压。 读/写电路可以被配置为根据多个字线中所选择的字线的位置来调整施加到多个位线的偏置电压的电平。

    IMAGE SENSING DEVICE AND LIDAR DEVICE
    5.
    发明申请
    IMAGE SENSING DEVICE AND LIDAR DEVICE 有权

    公开(公告)号：US20250116780A1

    公开(公告)日：2025-04-10

    申请号：US18818780

    申请日：2024-08-29

    Applicant: Samsung Electronics Co., Ltd. ,  SOGANG UNIVERSITY RESEARCH FOUNDATION

    Inventor： Young KIM ,  Jinwook BURM ,  Seungju LEE ,  Jaehun JEONG ,  Jonghyuk CHAE

    IPC: G01S17/894 ,  G01S7/4863

    Abstract: An image sensing device and a light detection and ranging (LiDAR) device include a single-photon avalanche diode (SPAD) array including SPAD pixels, a signal transmission unit including row lines connected in units of SPAD pixels of a same row and column lines connected in units of SPAD pixels of a same column, a bias circuit unit outputting a row bias signal corresponding to a row photon signal transmitted through a row line of the signal transmission unit and outputting a column bias signal corresponding to a column photon signal transmitted through a column line of the signal transmission unit, a logic circuit unit identifying, based on the row bias signal and the column bias signal, a SPAD pixel that has detected a photon, and a counter array performing photon counting with respect to a counter that corresponds to the identified SPAD pixel among counters corresponding to the SPAD array.

    SEMICONDUCTOR DEVICE
    9.
    发明公开
    SEMICONDUCTOR DEVICE 审中-公开

    公开(公告)号：US20230290838A1

    公开(公告)日：2023-09-14

    申请号：US18181071

    申请日：2023-03-09

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Taehun MYUNG ,  Yuri MASUOKA ,  Kihwang SON ,  Jaehun JEONG ,  Seulki PARK ,  Joongwon JEON ,  Kyunghoon JUNG ,  Yonghyun KO ,  Seungwook LEE

    IPC: H01L29/40 ,  H01L29/417 ,  H01L29/78

    CPC classification number: H01L29/405 ,  H01L29/41791 ,  H01L29/7851

    Abstract: A semiconductor device includes a substrate including an active region, a first gate line and a second gate line in the active region, a first source/drain contact pattern in the active region at one side of the first gate line, a second source/drain contact pattern in the active region at one side of the second gate line, and a dummy source/drain contact pattern in the active region between the first gate line and the second gate line. The first gate line and the second gate line may be spaced apart from each other in the first direction and may extend in the second direction. The second direction may cross the first direction. A size of the dummy source/drain contact pattern may be less than a size of the first source/drain contact pattern and a size of the second source/drain contact pattern.

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