MEMORY MODULES AND MEMORY SYSTEMS HAVING THE SAME

    公开(公告)号:US20220027090A1

    公开(公告)日:2022-01-27

    申请号:US17154030

    申请日:2021-01-21

    Abstract: Memory modules and memory systems having the same are provided. A memory module may include command/address terminals, data terminals, at least one monitoring terminal, a buffer, and a plurality of semiconductor memory devices. The buffer may be configured to receive and buffer data applied through the data terminals and a command/address applied through the command/address terminals to generate buffered write data and a buffered command/address. The buffer may be configured to buffer the buffered write data and the buffered command/address to generate module data and a module command/address, and store and then transmit at least one portion of the buffered write data as monitoring data through the at least one monitoring terminal. The plurality of semiconductor memory devices may be configured to receive and store the module data in response to the module command/address.

    Memory modules and memory systems having the same

    公开(公告)号:US11531496B2

    公开(公告)日:2022-12-20

    申请号:US17154030

    申请日:2021-01-21

    Abstract: Memory modules and memory systems having the same are provided. A memory module may include command/address terminals, data terminals, at least one monitoring terminal, a buffer, and a plurality of semiconductor memory devices. The buffer may be configured to receive and buffer data applied through the data terminals and a command/address applied through the command/address terminals to generate buffered write data and a buffered command/address. The buffer may be configured to buffer the buffered write data and the buffered command/address to generate module data and a module command/address, and store and then transmit at least one portion of the buffered write data as monitoring data through the at least one monitoring terminal. The plurality of semiconductor memory devices may be configured to receive and store the module data in response to the module command/address.

    Semiconductor memory device and a memory system having the same

    公开(公告)号:US11133040B2

    公开(公告)日:2021-09-28

    申请号:US16852986

    申请日:2020-04-20

    Abstract: A semiconductor memory device includes: a temperature sensor configured to sense an internal temperature of the semiconductor memory device and generate a temperature signal; and a temperature code storage unit configured to receive the temperature signal in response to a temperature code write control signal that is generated when an operation corresponding to a specific command is performed, generate an operating temperature code corresponding to the temperature signal, compare the operating temperature code with a previously stored temperature code, store a larger temperature code of the operating temperature code and the previously stored temperature code as a maximum temperature code, and output the maximum temperature code to an external source in response to a temperature code read control signal.

    Booting method of computing system including memory module with processing device mounted

    公开(公告)号:US11620135B2

    公开(公告)日:2023-04-04

    申请号:US17115924

    申请日:2020-12-09

    Abstract: A booting method of a computing system, which includes a memory module including a processing device connected to a plurality of memory devices, including: powering up the computing system; after powering up the computing system, performing first memory training on the plurality of memory devices by the processing device in the memory module, and generating a module ready signal indicating completion of the first memory training; after powering up the computing system, performing a first booting sequence by a host device, the host device executing basic input/output system (BIOS) code of a BIOS memory included in the computing system; waiting for the module ready signal to be received from the memory module in the host device after performing the first booting sequence; and receiving the module ready signal in the host device, and performing a second booting sequence based on the module ready signal.

    Memory modules and methods of operating same

    公开(公告)号:US11531618B2

    公开(公告)日:2022-12-20

    申请号:US17157323

    申请日:2021-01-25

    Abstract: A memory module includes a first memory device, a second memory device, and a processing buffer circuit that is connected to the first memory device and the second memory device (independently of each other) and a host. A processing buffer circuit is provided, which includes a processing circuit and a buffer. The processing circuit processes at least one of data received from the host, data stored in the first memory device, or data stored in the second memory device based on a processing command received from the host. The buffer is configured to store data processed by the processing circuit. The processing buffer circuit is configured to communicate with the host in compliance with a DDR SDRAM standard.

    MEMORY MODULES AND METHODS OF OPERATING SAME

    公开(公告)号:US20210390049A1

    公开(公告)日:2021-12-16

    申请号:US17157323

    申请日:2021-01-25

    Abstract: A memory module includes a first memory device, a second memory device, and a processing buffer circuit that is connected to the first memory device and the second memory device (independently of each other) and a host. A processing buffer circuit is provided, which includes a processing circuit and a buffer. The processing circuit processes at least one of data received from the host, data stored in the first memory device, or data stored in the second memory device based on a processing command received from the host. The buffer is configured to store data processed by the processing circuit. The processing buffer circuit is configured to communicate with the host in compliance with a DDR SDRAM standard.

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