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    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE
    4.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE 有权
    氮化物半导体发光器件

    公开(公告)号：US20130168639A1

    公开(公告)日：2013-07-04

    申请号：US13733586

    申请日：2013-01-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jong Hyun LEE ,  Sang Heon HAN ,  Jin Young LIM ,  Young Sun KIM

    IPC: H01L33/06

    CPC classification number: H01L33/06 ,  H01L33/14 ,  H01L33/32

    Abstract: A nitride semiconductor light emitting device includes first and second type nitride semiconductor layers. An active layer is disposed between the first and second type nitride semiconductor layers. A current spreading layer is disposed between the second type nitride semiconductor layer and the active layer. The current spreading layer includes first nitride thin films and second nitride thin films which are alternately laminated. The first nitride thin films have band gaps larger than those of the second nitride thin films. A first plurality of first nitride thin films are positioned at outer first and second sides of the current spreading layer. The first plurality of first nitride thin films have a thickness greater than that of a second plurality of first nitride thin films positioned between the first plurality of first nitride thin films.

    Abstract translation: 氮化物半导体发光器件包括第一和第二氮化物半导体层。 有源层设置在第一和第二氮化物半导体层之间。 电流扩散层设置在第二氮化物半导体层和有源层之间。 电流扩散层包括交替层叠的第一氮化物薄膜和第二氮化物薄膜。 第一氮化物薄膜具有比第二氮化物薄膜大的带隙。 第一多个第一氮化物薄膜位于电流扩展层的外部第一和第二侧。 第一多个第一氮化物薄膜的厚度大于位于第一多个第一氮化物薄膜之间的第二多个第一氮化物薄膜的厚度。

    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
    5.
    发明申请
    NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
    氮化物半导体发光器件及其制造方法

    公开(公告)号：US20140326944A1

    公开(公告)日：2014-11-06

    申请号：US14192776

    申请日：2014-02-27

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun Wook SHIM ,  Jin Young LIM ,  Jae Sung HYUN

    IPC: H01L33/06 ,  H01L33/26

    CPC classification number: H01L33/06 ,  H01L33/007 ,  H01L33/32

    Abstract: A method of manufacturing a nitride semiconductor light emitting device includes forming a first conductivity type nitride semiconductor layer. An active layer is formed on the first conductivity type nitride semiconductor layer. A second conductivity type nitride semiconductor layer is formed on the active layer. In the forming of the active layer, quantum well layers and quantum barrier layers are alternatively stacked and at least two dopant layers are formed inside of at least one of the quantum well layers. The dopant layers are doped with a dopant in a predetermined concentration.

    Abstract translation: 一种制造氮化物半导体发光器件的方法包括形成第一导电型氮化物半导体层。 在第一导电型氮化物半导体层上形成有源层。 在有源层上形成第二导电型氮化物半导体层。 在有源层的形成中，量子阱层和量子势垒层交替层叠，并且在至少一个量子阱层的内部形成至少两个掺杂剂层。 掺杂剂层以预定浓度掺杂掺杂剂。

    INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE
    7.
    发明申请
    INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE 有权

    公开(公告)号：US20220115406A1

    公开(公告)日：2022-04-14

    申请号：US17561887

    申请日：2021-12-24

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyeon Gyu YOU ,  In Gyum KIM ,  Gi Young YANG ,  Ji Su YU ,  Jin Young LIM ,  Hak Chul JUNG

    IPC: H01L27/118 ,  H01L27/02

    Abstract: An integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth second-type transistor and a fourth first-type transistor, a plurality of wiring layers which are disposed on the first and second standard cells and includes a first wiring layer, a second wiring layer, and a third wiring layer sequentially stacked. A source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers.

    INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE
    8.
    发明申请
    INTEGRATED CIRCUIT INCLUDING INTEGRATED STANDARD CELL STRUCTURE 有权

    公开(公告)号：US20210134837A1

    公开(公告)日：2021-05-06

    申请号：US16888677

    申请日：2020-05-30

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyeon Gyu YOU ,  In Gyum KIM ,  Gi Young YANG ,  Ji Su YU ,  Jin Young LIM ,  Hak Chul JUNG

    IPC: H01L27/118 ,  H01L27/02

    Abstract: An integrated circuit includes a first standard cell including a first first-type transistor, a first second-type transistor, a third second-type transistor, and a third first-type transistor, a second standard cell including a second first-type transistor, a second second-type transistor, a fourth second-type transistor and a fourth first-type transistor, a plurality of wiring layers which are disposed on the first and second standard cells and includes a first wiring layer, a second wiring layer, and a third wiring layer sequentially stacked. A source contact of the first first-type transistor and a source contact of the second first-type transistor are electrically connected through a first power rail of the plurality of wiring layers, and a source contact of the third first-type transistor and a source contact of the fourth first-type transistor are electrically connected through a second power rail of the plurality of wiring layers.

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    9.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20150207034A1

    公开(公告)日：2015-07-23

    申请号：US14577826

    申请日：2014-12-19

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Tan SAKONG ,  Byoung Kyun KIM ,  Tong Ik SHIN ,  Jin Young LIM ,  Young Sun KIM ,  Suk Ho YOON

    IPC: H01L33/24 ,  H01L33/32 ,  H01L33/00 ,  H01L33/06 ,  H01L33/02

    CPC classification number: H01L33/22 ,  H01L33/10

    Abstract: A semiconductor light emitting device may include a base semiconductor layer formed on a substrate and having defect regions therein; cavities disposed in regions corresponding to the defect regions on the base semiconductor layer; a capping layer disposed to cover at least one region of the base semiconductor layer and the cavities; and a light emitting structure disposed on the capping layer and including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Lattice defects formed in the light emitting structure may be reduced to enhance luminous efficiency.

    Abstract translation: 半导体发光器件可以包括形成在衬底上并在其中具有缺陷区域的基底半导体层; 设置在与所述基底半导体层上的所述缺陷区域对应的区域中的空腔; 封盖层，其设置成覆盖所述基底半导体层和所述空腔的至少一个区域; 以及发光结构，其设置在所述覆盖层上并且包括第一导电型半导体层，有源层和第二导电型半导体层。 可以减少在发光结构中形成的晶格缺陷，以提高发光效率。

    SEMICONDUCTOR LIGHT EMITTING DEVICE
    10.
    发明申请
    SEMICONDUCTOR LIGHT EMITTING DEVICE 审中-公开
    半导体发光器件

    公开(公告)号：US20130134475A1

    公开(公告)日：2013-05-30

    申请号：US13684406

    申请日：2012-11-23

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Sang Heon HAN ,  Jae Sung HYUN ,  Jin Young LIM ,  Jeong Wook LEE ,  Young Sun KIM

    IPC: H01L33/00

    CPC classification number: H01L33/0025 ,  H01L33/04 ,  H01L33/14 ,  H01L33/32

    Abstract: A semiconductor light emitting device is provided and includes an n-type semiconductor layer, a p-type semiconductor layer having a structure in which first and second doping regions including p-type impurities provided in different doping concentrations are alternately disposed one or more times; and an active layer disposed between the n-type semiconductor layer and the p-type semiconductor layer, wherein the p-type semiconductor layer includes at least one interface between the first and second doping regions to prevent diffusion of p-type impurities.

    Abstract translation: 提供了一种半导体发光器件，其包括n型半导体层，具有这样的结构的p型半导体层，其中包括以不同掺杂浓度提供的p型杂质的第一和第二掺杂区交替设置一次或多次; 以及设置在n型半导体层和p型半导体层之间的有源层，其中p型半导体层包括在第一和第二掺杂区域之间的至少一个界面，以防止p型杂质的扩散。

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