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    STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND CONTROLLER
    1.
    发明申请
    STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE AND CONTROLLER 审中-公开

    公开(公告)号：US20190333586A1

    公开(公告)日：2019-10-31

    申请号：US16163968

    申请日：2018-10-18

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jooyong Park ,  Jin-Young Kim ,  Kuihan Ko ,  Han Il Park ,  Bongsoon Lim

    IPC: G11C16/14 ,  G06F3/06

    Abstract: A storage device includes a nonvolatile memory device that includes memory blocks, each including memory cells, and a controller that receives a first write request from an external host device. Depending on the first write request, the controller transmits a first sanitize command to the nonvolatile memory device and transmits first write data and a first write command associated with the first write request to the nonvolatile memory device. The nonvolatile memory device is configured to sanitize first data previously written to first memory cells of a first memory block of the memory blocks in response to the first sanitize command. The nonvolatile memory device is further configured to write the first write data to second memory cells of the first memory block in response to the first write command.

    Nonvolatile memory device and method of operating the same
    3.
    发明授权
    Nonvolatile memory device and method of operating the same 有权

    公开(公告)号：US10748617B2

    公开(公告)日：2020-08-18

    申请号：US16222038

    申请日：2018-12-17

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Kui-Han Ko ,  Jin-Young Kim ,  Il-Han Park ,  Bong-Soon Lim

    IPC: G11C8/10 ,  G11C16/04 ,  G11C11/56 ,  G11C16/26 ,  G11C16/08 ,  G11C16/10 ,  H01L27/11582 ,  H01L27/11556

    Abstract: A method of operating a nonvolatile memory device is provided where the nonvolatile memory device includes a plurality of cell strings, and each cell string includes a plurality of multi-level cells. a voltage of a selected word line is sequentially changed to sequentially have a plurality of read voltages for determining threshold voltage states of the plurality of multi-level cells. A voltage of an adjacent word line adjacent to the selected word line is sequentially changed in synchronization with voltage changing time points of the selected word line. A load of the selected word line is reduced and an operation speed of the nonvolatile memory device is increased by synchronizing the voltage change of the selected word line and the voltage change of the adjacent word line in the same direction.

    Nonvolatile memory device
    7.
    发明授权
    Nonvolatile memory device 有权

    公开(公告)号：US10170192B2

    公开(公告)日：2019-01-01

    申请号：US15717992

    申请日：2017-09-28

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： June-Hong Park ,  Ki-Whan Song ,  Bong-Soon Lim ,  Su-Chang Jeon ,  Jin-Young Kim ,  Chang-Yeon Yu ,  Dong-Kyo Shim ,  Seong-Jin Kim

    IPC: G11C16/10 ,  G11C16/04 ,  G11C16/08 ,  G11C16/24

    Abstract: A nonvolatile memory device including a memory cell array having a plurality of planes; a plurality of page buffers arranged corresponding to each of the plurality of planes; and a control logic circuit configured to transmit a bit line setup signal to each of the plurality of page buffers. Each of the plurality of page buffers includes a precharge circuit configured to precharge a sensing node and a bit line in response to the bit line setup signal, and a shutoff circuit configured to perform a bit line shutoff operation in response to a bit line shutoff signal. The control logic circuit is configured to control a transition time when a level of the bit line setup signal is changed according to a gradient of the bit line shutoff signal which is changed from a first level to a second level.

    Solid state drive and a method for metadata access
    8.
    发明授权
    Solid state drive and a method for metadata access 有权

    公开(公告)号：US11106368B2

    公开(公告)日：2021-08-31

    申请号：US16458692

    申请日：2019-07-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jae-Duk Yu ,  Jin-Young Kim ,  Yu-Hun Jun

    IPC: G06F3/06 ,  G06F13/16

    Abstract: A solid state drive and a method for accessing the metadata are provided. The solid state drive includes different kinds of first and second memories and a memory controller which controls the first and second memories, wherein the memory controller receives a metadata access request from a host, and includes a condition checker which determines conditions of the first and second memories in response to the metadata access request and selects at least one of the conditions, and the memory controller accesses to the memory selected by the condition checker.

    Method of accessing data in storage device, method of managing data in storage device and storage device performing the same
    10.
    发明授权
    Method of accessing data in storage device, method of managing data in storage device and storage device performing the same 有权

    公开(公告)号：US10942678B2

    公开(公告)日：2021-03-09

    申请号：US16292769

    申请日：2019-03-05

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jin-Young Kim ,  Jae-Duk Yu ,  Yu-Hun Jun

    IPC: G06F3/06

    Abstract: A method of accessing data in a storage device including first and second nonvolatile memories of different types is provided. The method includes setting a meta data attribute table by classifying a plurality of meta data based on a plurality of data attributes and accessible memory types, detecting a data attribute of first meta data among the plurality of meta data based on the meta data attribute table in response to receiving a first access request for the first meta data, determining a target memory optimized for the first meta data from among the first and second nonvolatile memories based on the detected data attribute of the first meta data, and performing an access operation on the target memory based on the first meta data. The plurality of meta data are used for controlling an operation of the storage device.

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