公开(公告)号：US10506909B2

公开(公告)日：2019-12-17

申请号：US15108692

申请日：2014-12-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ki Tae Park ,  Sung Jin Kim ,  Chang Wook Lee ,  Heon Ho Jeong ,  Jae Man Joo

IPC: A47L15/42 ,  A47L15/16

Abstract: Disclosed is a dishwasher having a structure improved to enhance the efficiency of washing. The dishwasher includes a main body, a washing tub provided in the main body, a door configured to close or open an open side of the washing tub, a fixed nozzle fixed on another side of the washing tub and configured to spray washing water, a vane configured to reflect the washing water sprayed via the fixed nozzle toward dishes while being moved within the washing tub, and a rail assembly configured to guide the movement of the vane. The vane is rotationally coupled to the rail assembly to change a direction of movement of the washing water sprayed via the fixed nozzle.

公开(公告)号：US09076534B2

公开(公告)日：2015-07-07

申请号：US13841503

申请日：2013-03-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang Yong Yoon ,  Ki Tae Park ,  Moo Sung Kim ,  Bo Geun Kim ,  Hyun jun Yoon

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/34

CPC classification number: G11C16/3459 ,  G11C11/56 ,  G11C11/5671 ,  G11C16/10 ,  G11C16/3454

Abstract: A method of programming a flash memory device comprises programming selected memory cells, performing a verification operation to determine whether the selected memory cells have reached a target program state, and determining a start point of the verification operation based on a programming characteristic associated with a detection of a pass bit during programming of an initial program state.

Abstract translation: 一种对闪速存储器件进行编程的方法包括编程所选择的存储器单元，执行验证操作以确定所选择的存储器单元是否已经达到目标程序状态，以及基于与检测相关联的编程特性来确定验证操作的起始点 在编程初始程序状态期间的通过位。

公开(公告)号：US11166619B2

公开(公告)日：2021-11-09

申请号：US16502597

申请日：2019-07-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Johannes Buesing ,  Ki Tae Park

IPC: A47L15/50 ,  B29L31/32 ,  B29C45/44

Abstract: A roller is capable of smoothly rotating without any burr on a rolling surface. A dish washer including the roller includes: a case; a basket configured to accommodate dishes; a rail configured to guide the basket to be put into or taken out of the case; and a basket roller coupled with the basket and configured to move along the rail, the basket roller comprising a rolling portion configured to roll in contact with the rail, a first flare portion extending in a first direction from the rolling portion, and a second flare portion extending in a second direction from the rolling portion, the second direction being opposite to the first direction, wherein a diameter of the first flare portion is greater than a diameter of the second flare portion.

公开(公告)号：US11026558B2

公开(公告)日：2021-06-08

申请号：US16684957

申请日：2019-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Doo Kim ,  Ki Tae Park ,  Hyun-Woo Yu

IPC: A47L15/42

Abstract: Provided is a home appliance including: a main body having a cavity; a door rotatably coupled to a front side of the main body to open and close the cavity; a holder moveably mounted to the door; a decorative plate mounted to the holder to be disposed on a front surface of the door; and a wire connected to the holder and the main body to vary a tension depending rotation of the door, and configured to move the holder by the tension.

公开(公告)号：US20200154974A1

公开(公告)日：2020-05-21

申请号：US16684957

申请日：2019-11-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin Doo KIM ,  Ki Tae Park ,  Hyun-Woo Yu

IPC: A47L15/42

Abstract: Provided is a home appliance including: a main body having a cavity; a door rotatably coupled to a front side of the main body to open and close the cavity; a holder moveably mounted to the door; a decorative plate mounted to the holder to be disposed on a front surface of the door; and a wire connected to the holder and the main body to vary a tension depending rotation of the door, and configured to move the holder by the tension.

公开(公告)号：US09355733B2

公开(公告)日：2016-05-31

申请号：US14062088

申请日：2013-10-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jong-Young Kim ,  Ki Tae Park ,  Bo Geun Kim

IPC: G11C16/26 ,  G11C11/56

CPC classification number: G11C16/26 ,  G11C11/5628

Abstract: A memory system performs a first sensing operation to sense whether multi-level cells assume an on-cell state or an off-cell state in response to a first read voltage applied to a selected word line. It then supplies a pre-charge voltage to bit lines corresponding to multi-level cells that have been sensed as assuming the off-cell state in response to the first read voltage, and it performs a second sensing operation with the supplied pre-charge voltage to sense whether each of the multi-level cells that have been sensed as assuming the off-cell state assumes an on-cell state or an off-cell state in response to a second read voltage applied to the selected word line.

Abstract translation: 存储器系统执行第一感测操作以响应于施加到所选字线的第一读取电压来感测多电平单元是否呈现接通电池状态还是关闭电池状态。 然后，将预充电电压提供给对应于响应于第一读取电压而被感测为假电池状态的多电平电池的位线，并且其执行具有所提供的预充电电压的第二感测操作 检测出响应于施加到所选择的字线的第二读取电压，已经被感测为假设关闭单元状态的每个多电平单元是否处于接通电池状态或关闭单元状态。

公开(公告)号：US08446766B2

公开(公告)日：2013-05-21

申请号：US13628244

申请日：2012-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ki Tae Park ,  Myoung Gon Kang

IPC: G11C16/04 ,  G11C16/06 ,  G06F13/00

CPC classification number: G11C16/349 ,  G11C16/10 ,  G11C16/3495

Abstract: A nonvolatile memory device comprises a memory cell array comprising a plurality of memory blocks each divided into a plurality of regions, and a control logic component. The control logic component selects a memory block to be programmed based on program/erase cycles of the memory blocks, and selects a program rule used to program the regions of the selected memory block.

Abstract translation: 非易失性存储器件包括存储单元阵列，该存储单元阵列包括分成多个区域的多个存储块，以及控制逻辑元件。 控制逻辑部件基于存储器块的编程/擦除周期来选择要编程的存储器块，并且选择用于对所选存储器块的区域进行编程的程序规则。

公开(公告)号：US11710715B2

公开(公告)日：2023-07-25

申请号：US17208005

申请日：2021-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Joo Hyung Lee ,  Ki Tae Park ,  Byung Lyul Park ,  Joon Seok Oh ,  Jong Ho Yun

IPC: H01L25/10 ,  H01L23/00 ,  H01L25/18 ,  H01L23/498 ,  H01L23/31

CPC classification number: H01L24/24 ,  H01L24/05 ,  H01L24/25 ,  H01L25/105 ,  H01L25/18 ,  H01L23/3107 ,  H01L23/49822 ,  H01L24/13 ,  H01L2224/0401 ,  H01L2224/13024 ,  H01L2224/2405 ,  H01L2224/2413 ,  H01L2224/24155 ,  H01L2224/2505 ,  H01L2224/25171 ,  H01L2224/25174 ,  H01L2224/82101 ,  H01L2224/82106 ,  H01L2225/1035 ,  H01L2225/1041 ,  H01L2225/1058

Abstract: A semiconductor package includes an insulating layer including a first face and a second face opposite each other, a redistribution pattern including a wiring region and a via region in the insulating layer, the wiring region being on the via region, and a first semiconductor chip connected to the redistribution pattern. The first semiconductor chip may be on the redistribution pattern. An upper face of the wiring region may be coplanar with the first face of the insulating layer.

公开(公告)号：US09384840B2

公开(公告)日：2016-07-05

申请号：US14187362

申请日：2014-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yoon Hee Choi ,  Ki Tae Park ,  Bo Geun Kim

IPC: G11C7/00 ,  G11C16/10 ,  G11C7/04 ,  G11C16/30 ,  G11C16/26

CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C16/26 ,  G11C16/30

Abstract: Disclosed is a method generating a compensated operating voltage, such as a read voltage, in a non-volatile memory device, and a related non-volatile memory device. The operating voltage is compensated in response to one or more memory cell conditions such as temperature variation, programmed data state or physical location of a selected memory cell, page information for selected memory cell, or the location of a selected word line.

Abstract translation: 公开了一种在非易失性存储器件中生成诸如读取电压的补偿工作电压的方法以及相关的非易失性存储器件。 响应于一个或多个存储器单元条件（诸如所选存储器单元的温度变化，编程数据状态或物理位置，所选择的存储器单元的页面信息或所选择的字线的位置）来补偿工作电压。

公开(公告)号：US09159440B2

公开(公告)日：2015-10-13

申请号：US14076704

申请日：2013-11-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Gun Park ,  Ki Tae Park

IPC: G11C11/34 ,  G11C16/26 ,  G11C11/56 ,  G11C16/04

CPC classification number: G11C16/26 ,  G11C11/5642 ,  G11C16/0483

Abstract: Provided is a method for reading data from a nonvolatile memory device. In the method, a read method includes a first read step including reading a first memory cell of the nonvolatile memory device by applying a first set of read voltages to the first memory cell. The read method further includes a second read step including reading the first memory cell by applying a second set of read voltages and none of the voltages in the first set to the first memory cell when it is determined that the first read step results in an error and cannot be corrected with error correction. The second read step is performed by using data resulting from the first read step.

Abstract translation: 提供了一种从非易失性存储装置读取数据的方法。 在该方法中，读取方法包括第一读取步骤，包括通过向第一存储单元施加第一组读取电压来读取非易失性存储器件的第一存储器单元。 读取方法还包括第二读取步骤，包括当确定第一读取步骤导致错误时，通过将第一组读取电压和第一组中的电压没有到第一存储器单元来读取第一存储器单元 并且不能用纠错校正。 通过使用从第一读取步骤得到的数据来执行第二读取步骤。